APTM20DHM08G Asymmetrical - bridge MOSFET Power Module Application VBUS * * * Q1 CR3 G1 * Q4 OUT1 Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features OUT2 S1 VDSS = 200V RDSon = 8m typ @ Tj = 25C ID = 208A @ Tc = 25C CR2 G4 0/VBUS * * S4 * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration OUT1 VBUS Benefits 0/VBUS S1 * * * * * S4 G4 OUT2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 200 208 155 832 30 10 781 100 50 3000 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTM20DHM08G - Rev 2 July, 2006 G1 APTM20DHM08G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V VGS = 10V, ID = 104A VGS = VDS, ID = 5mA VGS = 30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 8 Min Max Unit A m V nA nF nC 32 64 Test Conditions 116 1698 1872 J 1972 Typ Max 250 600 Tj = 125C 200 1 1.4 0.9 Tj = 25C 60 Tj = 125C 110 Tj = 25C 400 Tj = 125C 1680 www.microsemi.com J 1858 Min 200 Tj = 25C Tj = 125C Tc = 75C ns 88 Inductive switching @ 125C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5 IF = 200A VR = 133V di/dt = 400A/s Unit 134 Inductive switching @ 25C VGS = 15V, VBus = 133V ID = 208A, R G = 2.5 IF = 200A IF = 400A IF = 200A Typ 14.4 4.66 0.29 280 Max 375 1500 10 5 150 106 Inductive switching @ 125C VGS = 15V VBus = 133V ID = 208A R G = 2.5 VR=200V Typ 3 VGS = 10V VBus = 100V ID = 208A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Min Tj = 25C Tj = 125C Unit V A A 1.1 V ns nC 2-6 APTM20DHM08G - Rev 2 July, 2006 Symbol APTM20DHM08G Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.16 0.29 Unit C/W V 150 125 100 5 3.5 280 C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTM20DHM08G - Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTM20DHM08G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.18 0.16 0.9 0.14 0.7 0.12 0.1 0.5 0.08 0.06 0.3 0.04 Single Pulse 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 1400 Transfert Characteristics 600 VGS=15V 10V 1000 ID, Drain Current (A) 9V 800 8.5V 600 8V 7.5V 400 7V 200 V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle 500 400 300 200 TJ=25C 100 T J=125C 6.5V 0 0 4 8 12 16 20 24 28 0 VDS , Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 104A 1.1 1 2 3 4 5 6 7 8 9 10 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 250 RDS(on) vs Drain Current ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance TJ=-55C 0 VGS=10V 1 VGS=20V 0.9 200 150 100 50 0.8 0 0 50 100 150 200 250 300 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (C) www.microsemi.com 4-6 APTM20DHM08G - Rev 2 July, 2006 ID, Drain Current (A) 1200 APTM20DHM08G 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 104A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 limited by RDSon 100s 100 1ms 10 0.6 10ms Single pulse TJ=150C TC=25C 100ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (C) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=208A V DS=40V 12 TJ =25C VDS=100V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 8 VDS=160V 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) 5-6 APTM20DHM08G - Rev 2 July, 2006 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM20DHM08G Delay Times vs Current Rise and Fall times vs Current 160 120 60 120 tr and tf (ns) t d(on) 40 100 80 tr 60 40 20 0 0 0 50 100 150 200 250 300 350 I D, Drain Current (A) 0 VDS=133V RG=2.5 TJ=125C L=100H Switching Energy (mJ) Eoff Eon 2 1 5 4 Eoff 3 Eon 2 1 0 50 100 150 200 250 300 350 0 I D, Drain Current (A) Operating Frequency vs Drain Current 250 ZVS V DS=133V D=50% R G=2.5 T J=125C T C=75C ZCS Hard switching 0 25 50 75 10 15 20 25 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 200 5 Gate Resistance (Ohms) 350 50 VDS=133V ID=208A TJ=125C L=100H Eoff 0 100 100 150 200 250 300 350 ID, Drain Current (A) 6 3 150 50 Switching Energy vs Gate Resistance Switching Energy vs Current 4 Eon and Eoff (mJ) tf 1000 TJ =150C 100 TJ =25C 10 1 100 125 150 175 200 I D, Drain Current (A) 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTM20DHM08G - Rev 2 July, 2006 t d(on) and td(off) (ns) t d(off) VDS=133V RG=2.5 T J=125C L=100H 80 20 Frequency (kHz) V DS=133V R G=2.5 T J=125C L=100H 140 100