GE28F320C3TC70 - Intel - Datasheet.Live

3-Volt Advanced+ Boot Block Flash

Memory

28F800C3, 28F160C3, 28F320C3, 28F640C3 (x16)

Datasheet

Product Features

The 3-Volt Advanced+ Book Block Flash memory, manufactured on Intel’s latest 0.13 µmand

0.18 µm technologies, represents a feature-rich solution for low-power applications. 3-Volt

Advanced+ Boot Block Flash memory devices incorporate low-voltage capability (2.7 V read,

program, and erase) with high-speed, low-power operation. Flexible block locking allows any

block to be independently locked or unlocked. Add to this the Intel®Flash Data Integrator (IFDI)

software and you have a cost-effecive, flexible, monolithic code plus data storage solution. Intel®

3-Volt Advanced+ Boot Block products will be available in 48-lead TSOP, 48-ball CSP, and 64-

ball Easy BGA packages. Additional information on this product family can be obtained by

accessing the Intel®Flash website: http://www.intel.com/design/flash.

■Flexible SmartVoltage Technology

—2.7 V–3.6 V Read/Program/Erase

—12 V for Fast Production Programming

■1.65 V–2.5 V or 2.7 V–3.6 V I/O Option

—Reduces Overall System Power

■High Performance

—2.7 V–3.6 V: 70 ns Max Access Time

■Optimized Architecture for Code Plus Data

Storage

—Eight 4-Kword Blocks, Top or Bottom

Locations

—Up to One Hundred-Twenty-Seven 32-

Kword Blocks

—Fast Program Suspend Capability

—Fast Erase Suspend Capability

■Flexible Block Locking

—Lock/Unlock Any Block

—Full Protection on Power-Up

—WP# Pin for Hardware Block Protection

—VPP = GND Option

—VCC Lockout Voltage

■Low Power Consumption

—9 mA Typical Read Power

—7 µA Typical Standby Power with

Automatic Power Savings Feature

■12 V Fast Production Program

■Extended Temperature Operation

—–40 °C to +85 °C

■128-bit Protection Register

—64-bit Unique Device Identifier

—64-bit User Programmable OTP Cells

■Extended Cycling Capability

—Minimum 100,000 Block Erase Cycles

■Supports Intel®Flash Data Integrator

Software

—Flash Memory Manager

—System Interrupt Manager

—Supports Parameter Storage, Streaming

Data (e.g., voice)

■Automated Word/Byte Program and Block

Erase

—Command User Interface

—Status Registers

■Cross-Compatible Command Support

—Intel Basic Command Set

—Common Flash Interface

■Standard Surface Mount Packaging

—48-Ball CSP Packages

—64-Ball Easy BGA Packages

—48-Lead TSOP Package

■ETOX™ VIII (0.13 µm)Flash Technology

—16-, 32-Mbit

■ETOX™ VII (0.18 µm)Flash Technology

—16-, 32-, 64-Mbit

■ETOX™ VI (0.25 µm) Flash Technology

—8-, 16- and 32-Mbit

Order Number: 290645-014

April 2002

Notice: This specification is subject to change without notice. Verify with your local Intel sales

office that you have the latest datasheet before finalizing a design.

2Datasheet

Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability

whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to

fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not

intended for use in medical, life saving, or life sustaining applications.

Intel may make changes to specifications and product descriptions at any time, without notice.

Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for

future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

The 28F800C3, 28F160C3, 28F320C3, 28F640C3 may contain design defects or errors known as errata which may cause the product to deviate from

published specifications. Current characterized errata are available on request.

MPEG is an international standard for video compression/decompression promoted by ISO. Implementations of MPEG CODECs, or MPEG enabled

platforms may require licenses from various entities, including Intel Corporation.

Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800-

548-4725 or by visiting Intel's website at http://www.intel.com.

*Third-party brands and names are the property of their respective owners.

Datasheet 3
Contents
Contents
0 Introduction ...............................................................................................................................7
1 Document Purpose ...............................................................................................................7
2 Nomenclature .......................................................................................................................7
3 Conventions..........................................................................................................................7
0 Device Description..................................................................................................................8
1 Product Overview .................................................................................................................8
2 Product Overview .................................................................................................................9
0 Product Description .............................................................................................................10
1 Package Pinouts.................................................................................................................11
2 Block Organization..............................................................................................................17
2.1 Parameter Blocks ..................................................................................................17
2.2 Main Blocks ...........................................................................................................17
0 Principles of Operation .......................................................................................................17
1 Bus Operation.....................................................................................................................17
1.1 Read ......................................................................................................................17
1.2 Output Disable .......................................................................................................18
1.3 Standby..................................................................................................................18
1.4 Reset .....................................................................................................................18
1.5 Write ......................................................................................................................19
2 Modes of Operation ............................................................................................................19
2.1 Read Array.............................................................................................................19
2.2 Read Configuration ................................................................................................20
2.3 Read Status Register.............................................................................................20
2.3.1 Clearing the Status Register ..................................................................21
2.4 Read Query ...........................................................................................................21
2.5 Program Mode .......................................................................................................21
2.5.1 Suspending and Resuming Program .....................................................21
2.6 Erase Mode ...........................................................................................................22
2.6.1 Suspending and Resuming Erase .........................................................22
3 Flexible Block Locking ........................................................................................................25
3.1 Locking Operation..................................................................................................26
3.1.1 Locked State ..........................................................................................26
3.2 Unlocked State ......................................................................................................26
3.3 Lock-Down State ...................................................................................................26
3.4 Reading Block-Lock Status....................................................................................27
3.5 Locking Operations during Erase Suspend ...........................................................27
3.6 Status Register Error Checking .............................................................................27
4 128-Bit Protection Register.................................................................................................28
4.1 Reading the Protection Register............................................................................28
4.2 Programming the Protection Register....................................................................29
4.3 Locking the Protection Register .............................................................................29
5 VPP Program and Erase Voltages ......................................................................................29
5.1 Improved 12-Volt Production Programming...........................................................29
5.2 VPP £ VPPLK for Complete Protection .................................................................30

Contents
4Datasheet
4.6 Power Consumption ........................................................................................................... 30
4.6.1 Active Power (Program/Erase/Read)..................................................................... 31
4.6.2 Automatic Power Savings (APS) ........................................................................... 31
4.6.3 Standby Power ...................................................................................................... 31
4.6.4 Deep Power-Down Mode....................................................................................... 31
4.7 Power and Reset Considerations ....................................................................................... 31
4.7.1 Power-Up/Down Characteristics............................................................................ 31
4.7.2 RP# Connected to System Reset.......................................................................... 32
4.7.3 VCC, VPP and RP# Transitions ............................................................................ 32
4.8 Power Supply Decoupling................................................................................................... 32
5.0 Electrical Specifications..................................................................................................... 33
5.1 Absolute Maximum Ratings ................................................................................................ 33
5.2 Operating Conditions ..........................................................................................................34
5.3 Capacitance........................................................................................................................ 34
5.4 DC Characteristics.............................................................................................................. 35
4.5 AC Characteristics—Read Operations ............................................................................... 38
4.6 AC Characteristics—Write Operations ............................................................................... 43
4.7 Erase and Program Timings............................................................................................... 47
4.8 Reset Operations................................................................................................................ 49
Appendix A WSM Current/Next States, Sheet 1 of 2 ...................................................50
Appendix B Program/Erase Flowcharts .........................................................................52
Appendix C Common Flash Interface Query Structure..............................................58
Appendix D Architecture Block Diagram .......................................................................65
Appendix E Word-Wide Memory Map Diagrams ..........................................................66
Appendix F Device ID Table...............................................................................................70
Appendix G Protection Register Addressing................................................................71
Appendix H VF Pitch BGA Package Drawing and Dimensions................................72
Appendix I Easy BGA Package Drawing & Dimensions ............................................73
Appendix J Additional Information ..................................................................................74
Appendix K Ordering Information ....................................................................................75

Datasheet 5

Contents

Revision History

Date of

Revision Version Description

05/12/98 -001 Original version

07/21/98 -002

48-Lead TSOP package diagram change

µBGA package diagrams change

32-Mbit ordering information change (Section 6)

CFI Query Structure Output Table Change (Table C2)

CFI Primary-Vendor Specific Extended Query Table Change for Optional

Features and Command Support change (Table C8)

Protection Register Address Change

IPPD test conditions clarification (Section 4.3)

µBGA package top side mark information clarification (Section 6)

10/03/98 -003

Byte-Wide Protection Register Address change

VIH Specification change (Section 4.3)

VIL Maximum Specification change (Section 4.3)

ICCS test conditions clarification (Section 4.3)

Added Command Sequence Error Note (Table 7)

Datasheet renamed from 3 Volt Advanced Boot Block, 8-, 16-, 32-Mbit Flash

Memory Family.

12/04/98 -004 Added tBHWH/tBHEH and tQVBL (Section 4.6)

Programming the Protection Register clarification (Section 3.4.2)

12/31/98 -005 Removed all references to x8 configurations

02/24/99 -006 Removed reference to 40-Lead TSOP from front page

06/10/99 -007

AddedEasyBGApackage(Section1.2)

Removed 1.8 V I/O references

Locking Operations Flowchart changed (Appendix B)

Added tWHGL (Section 4.6)

CFI Primary Vendor-Specific Extended Query changed (Appendix C)

03/20/00 -008 Max ICCD changed to 25 µA

Table 10, added note indicating VCCMax = 3.3 V for 32-Mbit device

04/24/00 -009 Added specifications for 0.18 micron product offerings throughout document

Added 64-Mbit density

10/12/00 -010

Changed references of 32Mbit 80ns devices to 70ns devices to reflect the

faster product offering.

Changed VccMax=3.3V reference to indicate that the affected product is the

0.25µm 32Mbit device.

Minor text edits throughout document.

7/20/01 -011

Added 1.8v I/O operation documentation where applicable

Added TSOP PCN ‘Pin-1’ indicator information

Changed references in 8 x 8 BGA pinout diagrams from ‘GND’ to ‘Vssq’

Added ‘Vssq’ to Pin Descriptions Information

Removed 0.4 µm references in DC characteristics table

Corrected 64Mb package Ordering Information from 48-uBGA to 48-VFBGA

Corrected ‘bottom’ boot block sizes to on 8Mb device to 8 x 4KWords

Minor text edits throughout document

Contents

6Datasheet

10/02/01 -012 Added specifications for 0.13 micron product offerings throughout document

2/05/02 -013

Corrected Iccw / Ippw / Icces /Ippes values.

Added mechanicals for 16Mb and 64Mb

Minor text edits throughout document.

4/05/02 -014

Updated 64Mb product offerings.

Updated 16Mb product offerings.

Revised and corrected DC Characteristics Table.

Added mechanicals for Easy BGA.

Minor text edits throughout document.

Date of

Revision Version Description

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 7

1.0 Introduction

1.1 Document Purpose

This document contains the specifications for the 3-Volt Advanced+ Boot Block Flash Memory

family. These flash memories add features, such as instant block locking and a protection register,

that can be used to enhance the security of systems.

1.2 Nomenclature

0x Hexadecimal prefix

0b Binary prefix

k (noun) 1 thousand

M (noun) 1 million

Nibble 4 bits

Byte 8 bits

Word 16 bits

Dword Double word = 32 bits

Kword 1024 words

Mword 1,048,576 words

Kb 1024 bits

KB 1024 bytes

Mb 1,048,576 bits

MB 1,048,576 bytes

APS Automatic Power Savings

CUI Command User Interface

OTP One Time Programmable

PR Protection Register

PRD Protection Register Data

PLR Protection Lock Register

RFU Reserved for Future Use

SCSP Stacked Chip Scale Package

SR Status Register

SRD Status Register Data

WSM Write State Machine

XSR eXtended Status Register

MLC Multi-Level Cell

1.3 Conventions

Group Membership Brackets: Square brackets will be used to designate group membership or to

define a group of signals with similar function (I.E. A[21:1], SR[4,1] )

VPEN vs. VPEN:When the reference is signal or package connection name, the notation will be

VPEN (specifically VPEN[2:1] or VPEN2 and VPEN1). When the reference is timing or level, the

notation will be VPEN only.

28F800C3, 28F160C3, 28F320C3, 28F640C3

8Datasheet

[opt. - multi-die use]Device: This term is used interchangeably throughout this document to denote

either the particular die, or the combination of the two die.

[opt. - multi-die use]Status Register: Each die has its own status register (SR), read out on the

lower 8 bits of each die's data bus. SR[23:16], the valid status bits for die #2 (upper die) are read on

device outputs D[23:16]; bits SR[31:24] are RFU. SR[7:0], the valid status bits for die #1 (lower

die) are read on device outputs D[7:0]; bits SR[15:8] are RFU.

[opt. - multi-die use]CE#[2:1]: This method of referring to the two chip enable inputs will be used

in the document when considering them as a single entity. When considered singly, they will be

referenced as CE#1 (die #1 chip enable) and CE#2 (die #2 chip enable).

2.0 Device Description

This section provides an overview of the 3-Volt Advanced+ Boot Block Flash Memory features,

packaging information , signal names and device architecture

2.1 Product Overview

The 3-Volt Advanced+ Boot Block Flash Memory product lineis a high perfomance memory utilizes reliable

and proven ETOX™ technology This family of products features 1.65 V – 2.5 V or 2.7 V–3.6 V I/Os and a

low VCC/VPP operating range of 2.7 V–3.6 V for Read, Program, and Erase operations. In addition, this fam-

ily is capable of fast programming at 12 V. The 3-Volt Advanced+ Boot Block flash memory features include

the following:

•Zero-latency, flexible block locking

•128-bit Protection Register

•Simple system implementation for 12-V production programming with 2.7-V, in-field

programming

•Ultra low-power operation at 2.7 V

•VCCQ input of 1.65 V–2.5 V on all I/Os. See Figures 1 through 4 for pinout diagrams and

VCCQ location

•Minimum 100,000 block erase cycles

•Common Flash Interface for software query of device specs and features

Table 1. 3-Volt Advanced+ Boot Block Feature Summary (Sheet 1 of 2)

Feature 8 Mbit(1),16Mbit,32Mbit

(2) Reference

VCC Operating Voltage 2.7 V – 3.6 V(3) Tab le 8

VPP Voltage Provides complete write protection with optional 12 V Fast Programming Tab l e 8

VCCQ I/O Voltage 1.65 V – 2.5 V or 2.7 V – 3.6 V

Bus Width 16-bit Tab l e 2

Speed (ns)

8 Mbit: 90, 110 @ 2.7 V and 80, 100 @ 3.0 V

16 Mbit: 70, 80, 90, 110 @ 2.7 V and 70, 80, 100 @ 3.0 V

32 Mbit: 70, 90, 100, 110 @ 2.7 V and 70, 90, 100 @ 3.0 V

64 Mbit: 80, 100 @ 2.7 V and 80, 100 @ 3.0 V

Section 5.4

28F800C3, 28F160C3, 28F320C3, 28F640C3
Datasheet 9
2.2 Product Overview
Intel provides secure low voltage memory solutions with the Advanced Boot Block family of
products. A new block locking feature allows instant locking/unlocking of any block with zero
latency. A 128-bit protection register allows unique flash device identification.
Discrete supply pins provide single voltage read, program, and erase capability at 2.7 V, while also
allowing 12-V VPP for faster production programming. Improved 12 V, a new feature designed to
reduce external logic, simplifies board designs when combining 12-V production programming
with 2.7-V in-field programming.
The 3-Volt Advanced+ Boot Block flash memory products are available in x16 packages in the
following densities: (see Section A, “Ordering Information” on page 50)
•8-Mbit (8, 388, 608 bit) flash memories organized as 512 Kwords of 16 bits each
•16-Mbit (16, 777, 216 bit) flash memories organized as 1024 Kwords of 16 bits each
•32-Mbit (33, 554, 432 bit) flash memories organized as 2048 Kwords of 16 bits each
•64-Mbit (67, 108, 864 bit) flash memories organized as 4096 Kwords of 16 bits each.
Eight 4-Kword parameter blocks are located at either the top (denoted by -T suffix) or the bottom
(-B suffix) of the address map in order to accommodate different microprocessor protocols for
kernel code location. The remaining memory is grouped into 64-Kbyte main blocks (see Appendix
E).
All blocks can be locked or unlocked instantly to provide complete protection for code or data (see
Section 4.3, “Flexible Block Locking” on page 25 for details).
The Command User Interface (CUI) serves as the interface between the microprocessor or
microcontroller and the internal operation of the flash memory. The internal Write State Machine
(WSM) automatically executes the algorithms and timings necessary for Program and Erase
operations, including verification, thereby unburdening the microprocessor or microcontroller. The
status register indicates the status of the WSM by signifying block-erase or word program
completion and status.
Blocking (top or bottom)
8 x 4-Kword parameter
8-Mb: 15 x 32-Kword main
16-Mb: 31 x 32-Kword main
32-Mb: 63 x 32-Kword main
64-Mb: 127 x 32-Kword main
Appendix 3.2
Appendix E
Operating Temperature Extended: –40 °C to +85 °C Tabl e 8
Program/Erase Cycling 100,000 cycles Tabl e 8
Packages 48-Lead TSOP
48-Ball µBGA* CSP (1), 48-Ball VF BGA, Easy BGA Figure 1,2and3
Block Locking Flexible locking of any block with zero latency Section 4.3
Protection Register 64-bit unique device number, 64-bit user programmable Section 4.4
NOTES:
1. 8-Mbit density not available in µBGA* CSP.
2. See Specification Update for changes to 32-Mbit devices (order 297938).
3. VCCMax = 3.3 V on 0.25µm 32-Mbit devices.
Table 1. 3-Volt Advanced+ Boot Block Feature Summary (Sheet 2 of 2)
Feature 8 Mbit(1),16Mbit,32Mbit
(2) Reference

28F800C3, 28F160C3, 28F320C3, 28F640C3

10 Datasheet

Program and erase automation allows Program and Erase operations to be executed using an

industry-standard two-write command sequence to the CUI. Program operations are performed in

word increments. Erase operations erase all locations within a block simultaneously. Both Program

and Erase operations can be suspended by the system software in order to read from any other

block. In addition, data can be programmed to another block during an erase suspend.

The 3-Volt Advanced+ Boot Block flash memories offer two low-power savings features:

Automatic Power Savings (APS), and standby mode. The device automatically enters APS mode

following the completion of a read cycle. Standby mode is initiated when the system deselects the

device by driving CE# inactive. Combined, these two power-savings features significantly reduce

power consumption.

The device can be reset by lowering RP# to GND, which provides CPU memory reset

synchronization and additional protection against bus noise that may occur during system reset and

power-up/down sequences (see Section 4.5 and Section 4.6).

Refer to Section 5.4, “DC Characteristics” on page 35 for complete current and voltage

specifications. Refer to Section 4.5 and Section 4.6 for read and write performance specifications.

Section 4.7 shows program and erase times.

3.0 Product Description

This section provides device pin descriptions and package pinouts for the 3-Volt Advanced+ Boot

Block Flash Memory family, which is available in 48-lead TSOP (x16) and 48-ball µBGA and

Easy BGA packages (Figures 1, 2 and 3, respectively).

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 11

3.1 Package Pinouts

0645_02

Note: Lower densities will have NC on the upper address pins. For example, a 16-Mbit device will have

NC on Pins 9 and 10.

Figure 1. 48-Lead TSOP Package

Advanced+ Boot Block

48-Lead TSOP

12 mm x 20 mm

TOP VIEW

CCQ

GND

WE#

RP#

WP#

OE#

GND

CE#

32 M

16 M

64 M

28F800C3, 28F160C3, 28F320C3, 28F640C3

12 Datasheet

Note: The topside marking on 8 Mb, 16 Mb, and 32 Mb Advanced and Advanced + Boot Block 48L

TSOP products will convert to a white ink triangle as a Pin 1 indicator. Products without the white

triangle will continue to use a dimple as a Pin 1 indicator. There are no other changes in package

Figure 2. New Mark for Pin-1 indicator on 48-Lead 8Mb, 16Mb and 32Mb TSOP

Current Mark:

New Mark:

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 13

size, materials, functionality, customer handling, or manufactuability. Product will continue to

meet Intel stringent quality requirements.

Products Affected are Intel Ordering Codes:

48-Lead TSOP

Extended

32 Mbit

TE28F320C3TC70

TE28F320C3BC70

TE28F320C3TC90

TE28F320C3BC90

TE28F320C3TA100

TE28F320C3BA100

TE28F320C3TA110

TE28F320C3BA110

Extended

16 Mbit

TE28F160C3TC70

TE28F160C3BC70

TE28F160C3TC80

TE28F160C3BC80

TE28F160C3TA90

TE28F160C3BA90

TE28F160C3TA110

TE28F160C3BA110

Extended

8Mbit

TE28F800C3TA90

TE28F800C3BA90

TE28F800C3TA110

TE28F800C3BA110

28F800C3, 28F160C3, 28F320C3, 28F640C3

14 Datasheet

NOTE: Shaded connections indicate the upgrade address connections. Lower density devices will not have the

upper address solder balls. Routing is not recommended in this area. A19 is the upgrade address for the

16-Mbit device. A20 is the upgrade address for the 32-Mbit device. A21 is the upgrade address for the

64-Mbit device. 4-Mbit density not available in µBGA CSP.

Figure 3. 48-Ball µBGA* and 48-Ball Very Fine Pitch BGA Chip Size Package

(Top View, Ball Down)

13254768

A13

A14

A15

A16

VCCQ

A11

A10

A12

D14

D15

WE#

VPP

RP#

A21

D11

D12

WP#

A18

A20

A19

A17

CE#

GND

GND D7 D13 D4 VCC D10 D1 OE#

16M

32M64M

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 15

16fast

NOTES:

1. A19 denotes 16 Mbit; A20 denotes 32 Mbit; A21 denotes 64 Mbit.

2. A22 indicates future density upgrade path to128 Mbit (not yet available).

Figure 4. 8 x 8 Easy BGA Package

1234567 8

Top View

-BallSide Bottom View - Ball Side

A1A6A18 VPP VCC GND A10 A15

A2A17 A19

(1) RP# DU A20

(1) A11 A14

A3A7WP# WE# DU A

(1) A12 A13

A4A5DU

8DQ

1DQ

9DQ

3DQ

12 DQ

6DU DU

CE# DQ

0DQ

10 DQ

11 DQ

5DQ

14 DU DU

A0VSSQ DQ

2DQ

4DQ

13 DQ

15 VSSQ A16

A22

(2) OE# VCCQ VCC VSSQ DQ

7VCCQ DU

DU DU DU A8A9

8 7 6 5 4 3 2 1

A15 A10 GND VCC VPP A18 A6A1

A14 A11 A20

(1) DU RP# A19

(1) A17 A2

A13 A12 A21

(1) DU WE# WP# A7A3

A9A8DU

DU DU DQ

6DQ

12 DQ

3DQ

9DQ

1DQ

DU DU DQ

14 DQ

5DQ

11 DQ

10 DQ

0CE#

A16 VSSQ D15 D13 DQ

4DQ

2VSSQ A0

DU VCCQ D7VSSQ VCC VCCQ OE# A22

(2)

DU DU DU A5A4

28F800C3, 28F160C3, 28F320C3, 28F640C3

16 Datasheet

Table 2. 3-Volt Advanced+ Boot Block Pin Descriptions

Symbol Type Name and Function

A0–A21 INPUT ADDRESS INPUTS: Memory addresses are internally latched during a program or erase cycle.

8-Mbit: A[0-18], 16-Mbit: A[0-19], 32-Mbit: A[0-20], 64-Mbit: A[0-21]

DQ0–DQ7

INPUT/

OUTPUT

DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle during a Program

command. Inputs commands to the Command User Interface when CE# and WE# are active.

Data is internally latched. Outputs array, configuration and status register data. The data pins float

to tri-state when the chip is de-selected or the outputs are disabled.

DQ8–DQ15

INPUT/

OUTPUT

DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle during a Program

command. Data is internally latched. Outputs array and configuration data. The data pins float to

tri-state when the chip is de-selected.

CE# INPUT

CHIP ENABLE: Activates the internal control logic, input buffers, decoders and sense amplifiers.

CE# is active low. CE# high de-selects the memory device and reduces power consumption to

standby levels.

OE# INPUT OUTPUT ENABLE: Enables the device’s outputs through the data buffers during a Read

operation. OE# is active low.

WE# INPUT WRITE ENABLE: Controls writes to the command register and memory array. WE# is active low.

Addresses and data are latched on the rising edge of the second WE# pulse.

RP# INPUT

RESET/DEEP POWER-DOWN: Uses two voltage levels (VIL,V

IH) to control reset/deep power-

down mode.

WhenRP#isatlogiclow,thedeviceisinreset/deeppower-downmode, which drives the

outputs to High-Z, resets the Write State Machine, and minimizes current levels (ICCD).

When RP# is at logic high, the device is in standard operation. When RP# transitions from

logic-low to logic-high, the device resets all blocks to locked and defaults to the read array mode.

WP# INPUT

WRITE PROTECT: Controls the lock-down function of the flexible locking feature.

When WP# is a logic low, the lock-down mechanism is enabled and blocks marked lock-down

cannot be unlocked through software.

When WP# is logic high, the lock-down mechanism is disabled and blocks previously locked-

down are now locked and can be unlocked and locked through software. After WP# goes low, any

blocks previously marked lock-down revert to that state.

See Section 4.3 for details on block locking.

VCC SUPPLY DEVICE POWER SUPPLY: [2.7 V–3.6 V] Supplies power for device operations.

VCCQ INPUT

I/O POWER SUPPLY: Enablesalloutputstobedrivento1.8V–2.5VwhiletheV

CC is at 2.7 V–

3.3V.IftheV

CC is regulated to 2.7 V–2.85 V, VCCQ canbedrivenat1.65V–2.5Vtoachieve

lowest power operation (see Section 5.4).ThisinputmaybetieddirectlytoV

CC (2.7 V–3.6 V).

VPP

INPUT/

SUPPLY

PROGRAM/ERASE POWER SUPPLY: [1.65 V–3.6 V or 11.4 V–12.6 V] Operates as a input at

logic levels to control complete device protection. Supplies power for accelerated Program and

Erase operations in 12 V ±5% range. This pin cannot be left floating.

Lower VPP ≤VPPLK, to protect all contents against Program and Erase commands.

Set VPP =V

CC for in-system Read, Program and Erase operations. In this configuration, VPP

can drop as low as 1.65 V to allow for resistor or diode drop from the system supply. Note that if

VPP is driven by a logic signal, VIH = 1.65. That is, VPP must remain above 1.65 V to perform in-

system flash modifications.

Raise VPP to 12 V ±5% for faster program and erase in a production environment. Applying 12 V

±5% to VPP can only be done for a maximum of 1000 cycles on the main blocks and 2500 cycles

on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum. See

Section 4.4 for details on VPP voltage configurations.

VSSQ SUPPLY GROUND: For all internal circuitry. All VSSQ inputs must be connected. Same function as GND.

GND SUPPLY GROUND: For all internal circuitry. All ground inputs must be connected.

NC NO CONNECT: Pin may be driven or left floating.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 17

3.2 Block Organization

The 3-Volt Advanced+ Boot Block is an asymmetrically blocked architecture that enables system

integration of code and data within a single flash device. Each block can be erased independently

of the others up to 100,000 times. For the address locations of each block, see the memory maps in

Appendix E.

3.2.1 Parameter Blocks

The 3-Volt Advanced+ Boot Block flash memory architecture includes parameter blocks to

facilitate storage of frequently updated small parameters (i.e., data that would normally be stored in

an EEPROM). Each device contains eight parameter blocks of 4 Kwords (4,096 words).

3.2.2 Main Blocks

After the parameter blocks, the remainder of the array is divided into 32-Kword (32,768 words)

main blocks for data or code storage. Each 8-Mbit, 16-Mbit, 32-Mbit, or 64-Mbit device contains

15, 31, 63, or 127 main blocks, respectively.

4.0 Principles of Operation

The 3-Volt Advanced+ Boot Block flash memory family uses a CUI and automated algorithms to

simplify Program and Erase operations. The CUI allows for 100% CMOS-level control inputs and

fixed power supplies during erasure and programming.

The internal WSM completely automates Program and Erase operations while the CUI signals the

start of an operation and the status register reports status. The CUI handles the WE# interface to the

data and address latches, as well as system status requests during WSM operation.

4.1 Bus Operation

The 3-Volt Advanced+ Boot Block flash memory devices read, program, and erase in-system via

the local CPU or microcontroller. All bus cycles to or from the flash memory conform to standard

microcontroller bus cycles. Four control pins dictate the data flow in and out of the flash

component: CE#, OE#, WE#, and RP#. Table 3 on page 18 summarizes these bus operations.

4.1.1 Read

The flash memory has four read modes available: read array, read configuration, read status, and

read query. These modes are accessible independent of the VPP voltage. The appropriate Read

Mode command must be issued to the CUI to enter the corresponding mode. Upon initial device

power-up or after exit from reset, the device automatically defaults to read-array mode.

CE# and OE# must be driven active to obtain data at the outputs. CE# is the device selection

control; when active it enables the flash memory device. OE# is the data output control, and it

drives the selected memory data onto the I/O bus. For all read modes, WE# and RP# must be at

VIH.Figure 9, “AC Waveform: Read Operations” on page 42 illustrates a read cycle.

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18 Datasheet

4.1.2 Output Disable

With OE# at a logic-high level (VIH), the device outputs are disabled. Output pins are placed in a

high-impedance state.

4.1.3 Standby

Deselecting the device by bringing CE# to a logic-high level (VIH) places the device in standby

mode, which substantially reduces device power consumption without any latency for subsequent

read accesses. In standby, outputs are placed in a high-impedance state independent of OE#. If

deselected during Program or Erase operation, the device continues to consume active power until

the Program or Erase operation is complete.

8-bit devices use only DQ [0:7], 16-bit devices use DQ [0:15].

4.1.4 Reset

From read mode, RP# at VIL for time tPLPH deselects the memory, places output drivers in a high-

impedance state, and turns off all internal circuits. After return from reset, a time tPHQV is required

until the initial read-access outputs are valid. A delay (tPHWL or tPHEL) is required after return from

reset before a write can be initiated. After this wake-up interval, normal operation is restored. The

CUI resets to read-array mode, the status register is set to 80H, and all blocks are locked. Figure 11,

“AC Waveform: Reset Operations” on page 49 (section A) illustrates this case.

If RP# is taken low for time tPLPH during a Program or Erase operation, the operation will be

aborted and the memory contents at the aborted location (for a program) or block (for an erase) are

no longer valid, since the data may be partially erased or written. The abort process goes through

the following sequence:

1. When RP# goes low, the device shuts down the operation in progress, a process which takes

time tPLRH to complete.

2. After this time tPLRH, the part will either reset to read-array mode (if RP# has gone high during

tPLRH,Figure 11, section B) or enter reset mode (if RP# is still logic low after tPLRH,Figure

11, section C).

Table 3. Bus Operations

Mode Notes RP# CE# OE# WE# DQ0–7 DQ8–15

Read (Array, Status, Configuration, or Query) 1, 2,3 VIH VIL VIL VIH DOUT DOUT

Output Disable 1 VIH VIL VIH VIH High Z High Z

Standby 1 VIH VIH X X High Z High Z

Reset 1,4 VIL X X X High Z High Z

Write 1,4,5,6 VIH VIL VIH VIL DIN DIN

NOTES:

1. X must be VIL,V

IH for control pins and addresses.

2. See DC Characteristics for VPPLK,V

PP1,V

PP2,V

PP3, voltages.

3. Manufacturer and device codes may also be accessed in read-configuration mode (A1–A20 =0).SeeTable4onpage20.

4. To program or erase the lockable blocks, hold WP# at VIH.

5. Refer to Table5onpage23for valid DIN during a Write operation.

6.RP#mustbeatGND± 0.2 V to meet the maximum deep power-down current specified.

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Datasheet 19

3. In both cases, after returning from an aborted operation, the relevant time tPHQV or tPHWL/

tPHEL must be observed before a Read or Write operation is initiated, as discussed in the

previous paragraph. However, in this case, these delays are referenced to the end of tPLRH

rather than when RP# goes high.

As with any automated device, it is important to assert RP# during system reset. When the system

comes out of reset, the processor expects to read from the flash memory. Automated flash

memories provide status information when read during program or Block-Erase operations. If a

CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the

flash memory may be providing status information instead of array data. Intel®Flash memories

allow proper CPU initialization following a system reset through the use of the RP# input. In this

application, RP# is controlled by the same RESET# signal that resets the system CPU.

4.1.5 Write

A write occurs when both CE# and WE# are low and OE# is high. Commands are written to the

Command User Interface (CUI) using standard microprocessor write timings to control Flash

operations. The CUI does not occupy an addressable memory location. The address and data buses

are latched on the rising edge of the second WE# or CE# pulse, whichever occurs first. See Figure

10, “AC Waveform: Program and Erase Operations” on page 48. The available commands are

shown in Table 6 on page 24,andAppendix A provides detailed information on moving between

the different modes of operation using CUI commands.

Two commands modify array data: Program (40H), and Erase (20H). Writing either of these

commands to the internal Command User Interface (CUI) initiates a sequence of internally timed

functions that culminate in the completion of the requested task (unless that operation is aborted by

either RP# being driven to VIL for tPLRH or an appropriate Suspend command).

4.2 Modes of Operation

The flash memory has four read modes (read array, read configuration, read status, and read query),

and two write modes (program and erase). Three additional modes (erase suspend to program,

erase suspend to read, and program suspend to read) are available only during suspended

operations. Tables 5 and 6 summarize the commands used to reach these modes. Appendix A is a

comprehensive chart showing the state transitions.

4.2.1 Read Array

When RP# transitions from VIL (reset) to VIH, the device defaults to read-array mode and will

respond to the read-control inputs (CE#, address inputs, and OE#) without any additional CUI

commands.

When the device is in read array mode, four control signals control data output.

•WE# must be logic high (VIH)

•CE# must be logic low (VIL)

•OE# must be logic low (VIL)

•RP#mustbelogichigh(V

IH)

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20 Datasheet

In addition, the address of the desired location must be applied to the address pins. If the device is

not in read-array mode, as would be the case after a Program or Erase operation, the Read Array

command (FFH) must be written to the CUI before array reads can occur.

4.2.2 Read Configuration

The read-configuration mode outputs three types of information: the manufacturer/device

identifier, the block locking status, and the protection register. The device is switched to this mode

by writing the Read Configuration command (90H). Once in this mode, read cycles from addresses

shown in Table 4 retrieve the specified information. To return to read-array mode, write the Read

Array command (FFH).

4.2.3 Read Status Register

The status register indicates the status of device operations, and the success/failure of that

operation. The Read Status Register (70H) command causes subsequent reads to output data from

the status register until another command is issued. To return to reading from the array, issue a

Read Array (FFH) command.

The status-register bits are output on DQ0–DQ7. The upper byte, DQ8–DQ15, outputs 00H during a

Read Status Register command.

The contents of the status register are latched on the falling edge of OE# or CE# (whichever occurs

last), which prevents possible bus errors that might occur if status register contents change while

being read. CE# or OE# must be toggled with each subsequent status read, or the status register

will not indicate completion of a Program or Erase operation.

When the WSM is active, SR.7 will indicate the status of the WSM; the remaining bits in the status

Table 7, “Status Register Bit Definition” on page 25).

Table 4. Read Configuration Table

Item Address Data

Manufacturer Code (x16) 00000 0089

Device ID (See Appendix F) 00001 ID

Block Lock Configuration(1) XX002(2) LOCK

•BlockIsUnlocked DQ

0=0

•Block Is Locked DQ0=1

•Block Is Locked-Down DQ1=1

Protection Register Lock(3) 80 PR-LK

Protection Register (x16) 81–88 PR

NOTES:

1. See Section 4.3.4 for valid lock-status outputs.

2. “XX” specifies the block address of lock configuration being read.

3. See Section 4.4 for protection register information.

4. Other locations within the configuration address space are reserved

by Intel for future use.

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Datasheet 21

4.2.3.1 Clearing the Status Register

The WSM sets status bits 1 through 7 to “1,” and clears bits 2, 6, and 7 to “0,” but cannot clear

status bits 1 or 3 through 5 to “0.” Because bits 1, 3, 4, and 5 indicate various error conditions,

these bits can be cleared only through the Clear Status Register (50H) command. By allowing the

system software to control the resetting of these bits, several operations may be performed (such as

cumulatively programming several addresses or erasing multiple blocks in sequence) before

reading the status register to determine if an error occurred during that series. Clear the status

device. The Read Array command must be issued before data can be read from the memory array.

Resetting the device also clears the status register.

4.2.4 Read Query

The read-query mode outputs Common Flash Interface (CFI) data when the device is read, and can

be accessed by writing the Read Query Command (98H). The CFI data structure contains

information such as block size, density, command set, and electrical specifications. Once in this

mode, read cycles from addresses shown in Appendix C retrieve the specified information. To

return to read-array mode, write the Read Array command (FFH).

4.2.5 Program Mode

Programming is executed using a two-write sequence. The Program Setup command (40H) is

written to the CUI followed by a second write which specifies the address and data to be

programmed. The WSM will execute a sequence of internally timed events to program preferred

bits of the addressed location, then verify the bits are sufficiently programmed. Programming the

memory results in specific bits within an address location being changed to a “0.” If users attempt

to program “1”s, the memory cell contents do not change and no error occurs.

The status register indicates programming status: while the program sequence executes, status bit 7

is “0.” The status register can be polled by toggling either CE# or OE#. While programming, the

only valid commands are Read Status Register, Program Suspend, and Program Resume.

When programming is complete, the program-status bits should be checked. If the programming

operation was unsuccessful, bit SR.4 of the status register is set to indicate a program failure. If

SR.3 is set, then VPP was not within acceptable limits, and the WSM did not execute the program

command. If SR.1 is set, a program operation was attempted on a locked block and the operation

was aborted.

The status register should be cleared before attempting the next operation. Any CUI instruction can

follow after programming is completed; however, to prevent inadvertent status-register reads, be

sure to reset the CUI to read-array mode.

4.2.5.1 Suspending and Resuming Program

The Program Suspend command halts an in-progress program operation so that data can be read

from other locations of memory. Once the programming process starts, writing the Program

Suspend command to the CUI requests that the WSM suspend the program sequence (at

predetermined points in the program algorithm). The device continues to output status-register data

after the Program Suspend command is written. Polling status-register bits SR.7 and SR.2 will

determine when the program operation has been suspended (both will be set to “1”). tWHRH1/

tEHRH1 specify the program-suspend latency.

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22 Datasheet

A Read Array command can now be written to the CUI to read data from blocks other than that

which is suspended. The only other valid commands while program is suspended are Read Status

command is written to the flash memory, the WSM will continue with the programming process

and status register bits SR.2 and SR.7 will automatically be cleared. The device automatically

outputs status register data when read (see Figure 13, “Program Suspend/Resume Flowchart” on

page 53) after the Program Resume command is written. VPP must remain at the same VPP level

used for program while in program-suspend mode. RP# must also remain at VIH.

4.2.6 Erase Mode

To erase a block, write the Erase Set-up and Erase Confirm commands to the CUI, along with an

address identifying the block to be erased. This address is latched internally when the Erase

Confirm command is issued. Block erasure results in all bits within the block being set to “1.” Only

one block can be erased at a time. The WSM will execute a sequence of internally timed events to

program all bits within the block to “0,” erase all bits within the block to “1,” then verify that all

bits within the block are sufficiently erased. While the erase executes, status bit 7 is a “0.”

When the status register indicates that erasure is complete, check the erase-status bit to verify that

the Erase operation was successful. If the Erase operation was unsuccessful, SR.5 of the status

the Erase Confirm command was issued, the WSM will not execute the erase sequence; instead,

SR.5 of the status register is set to indicate an erase error, and SR.3 is set to a “1” to identify that

VPP supply voltage was not within acceptable limits.

After an Erase operation, clear the status register (50H) before attempting the next operation. Any

CUI instruction can follow after erasure is completed; however, to prevent inadvertent status-

4.2.6.1 Suspending and Resuming Erase

Since an Erase operation requires on the order of seconds to complete, an Erase Suspend command

is provided to allow erase-sequence interruption in order to read data from—or program data to—

another block in memory. Once the erase sequence is started, writing the Erase Suspend command

to the CUI suspends the erase sequence at a predetermined point in the erase algorithm. The status

specified by tWHRH2/tEHRH2.

A Read Array/Program command can now be written to the CUI to read/program data from/to

blocks other than that which is suspended. This nested Program command can subsequently be

suspended to read yet another location. The only valid commands while Erase is suspended are

Read Status Register, Read Configuration, Read Query, Program Setup, Program Resume, Erase

Resume, Lock Block, Unlock Block, and Lock-Down Block. During erase-suspend mode, the chip

can be placed in a pseudo-standby mode by taking CE# to VIH, which reduces active current

consumption.

Erase Resume continues the erase sequence when CE# = VIL. Similar to the end of a standard

Erase operation, the status register must be read and cleared before the next instruction is issued.

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Datasheet 23

Bus operations are defined in Table 3, “Bus Operations” on page 18.

Table 5. Command Bus Operations

Command Notes

First Bus Cycle Second Bus Cycle

Oper Addr Data Oper Addr Data

Read Array 1 Write X FFH

Read Configuration 1, 2 Write X 90H Read IA ID

Read Query 1, 2 Write X 98H Read QA QD

Read Status Register 1 Write X 70H Read X SRD

Clear Status Register 1 Write X 50H

Program 1, 3 Write X 40H/10H Write PA PD

Block Erase/Confirm 1 Write X 20H Write BA D0H

Program/Erase Suspend 1 Write X B0H

Program/Erase Resume 1 Write X D0H

Lock Block 1 Write X 60H Write BA 01H

Unlock Block 1 Write X 60H Write BA D0H

Lock-Down Block 1 Write X 60H Write BA 2FH

Protection Program 1 Write X C0H Write PA PD

X = "Don’t Care" PA = Prog Addr BA = Block Addr IA =Identifier Addr. QA = Query Addr.

SRD = Status Reg.

Data PD = Prog Data ID = Identifier Data QD = Query Data

NOTES:

1. Following the Read Configuration or Read Query commands, Read operations output device configuration

or CFI query information, respectively. See Section 4.2.2 and Section 4.2.4.

2. Either 40H or 10H command is valid, but the Intel standard is 40H.

3. When writing commands, the upper data bus [DQ8–DQ15] should be either VIL or VIH, to minimize current

draw.

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24 Datasheet
Table 6. Command Codes and Descriptions
Code Device Mode Description
FF Read Array This command places the device in read-array mode, which outputs array data on the data
pins.
40 Program Set-Up
This is a two-cycle command. The first cycle prepares the CUI for a program operation. The
second cycle latches addresses and data information and initiates the WSM to execute the
Program algorithm. The flash outputs status-register data when CE# or OE# is toggled. A Read
Array command is required after programming to read array data. See Section 4.2.5.
20 Erase Set-Up
Prepares the CUI for the Erase Confirm command. If the next command is not an Erase
Confirm command, then the CUI will (a) set both SR.4 and SR.5 of the status register to a “1,”
(b) place the device into the read-status-register mode, and (c) wait for another command. See
Section 4.2.6.
D0
Erase Confirm
Program/Erase
Resume
Unlock Block
If the previous command was an Erase Set-Up command, then the CUI will close the address
and data latches and begin erasing the block indicated on the address pins. During program/
erase, the device will respond only to the Read Status Register, Program Suspend and Erase
Suspend commands, and will output status-register data when CE# or OE# is toggled.
If a Program or Erase operation was previously suspended, this command will resume that
operation.
If the previous command was Configuration Set-Up, the CUI will latch the address and unlock
the block indicated on the address pins. If the block had been previously set to Lock-Down, this
operation will have no effect. (Section 4.3)
B0
Program Suspend
Erase
Suspend
Issuing this command will begin to suspend the currently executing Program/Erase operation.
The status register will indicate when the operation has been successfully suspended by
setting either the program-suspend (SR.2) or erase-suspend (SR.6) and the WSM status bit
(SR.7) to a “1” (ready). The WSM will continue to idle in the SUSPEND state, regardless of the
state of all input-control pins except RP#, which will immediately shut down the WSM and the
remainder of the chip if RP# is driven to VIL. See Sections 3.2.5.1 and 3.2.6.1.
70 Read Status
Register
This command places the device into read-status-register mode. Reading the device will
output the contents of the status register, regardless of the address presented to the device.
The device automatically enters this mode after a Program or Erase operation has been
initiated. See Section 4.2.3.
50 Clear Status
Register
The WSM can set the block-lock status (SR.1), VPP Status (SR.3), program status (SR.4), and
erase-status (SR.5) bits in the status register to “1,” but it cannot clear them to “0.” Issuing this
command clears those bits to “0.”
90 Read
Configuration
Puts the device into the read-configuration mode so that reading the device will output the
manufacturer/device codes or block-lock status. Section 4.2.2.
60 Configuration
Set-Up
Prepares the CUI for changes to the device configuration, such as block-locking changes. If
the next command is not Block Unlock, Block Lock, or Block Lock-Down, then the CUI will set
both the program and erase-status-register bits to indicate a command-sequence error. See
Section 4.2.
01 Lock-Block If the previous command was Configuration Set-Up, the CUI will latch the address and lock the
block indicated on the address pins. (Section 4.3)
2F Lock-Down If the previous command was a Configuration Set-Up command, the CUI will latch the address
and lock-down the block indicated on the address pins. (Section 4.3)
98 Read
Query
Puts the device into the read-query mode so that reading the device will output Common Flash
Interface information. See Section 4.2.4 and Appendix C.
C0
Protection
Program
Setup
This is a two-cycle command. The first cycle prepares the CUI for a program operation to the
protection register. The second cycle latches addresses and data information and initiates the
WSM to execute the Protection Program algorithm to the protection register. The flash outputs
status-register data when CE# or OE# is toggled. A Read Array command is required after
programming to read array data. See Section 4.4.
10 Alt. Prog Set-Up Operates the same as Program Set-up command. (See 40H/Program Set-Up)
00 Invalid/
Reserved
Unassigned commands that should not be used. Intel reserves the right to redefine these
codes for future functions.
NOTE: See Appendix A for mode transition information.

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Datasheet 25

4.3 Flexible Block Locking

Intel 3-Volt Advanced+ Boot Block products offer an instant, individual block-locking scheme that

allows any block to be locked or unlocked with no latency, enabling instant code and data

protection.

This locking scheme offers two levels of protection. The first level allows software-only control of

block locking (useful for data blocks that change frequently), while the second level requires

hardware interaction before locking can be changed (useful for code blocks that change

infrequently).

The following sections will discuss the operation of the locking system. The term “state [XYZ]”

will be used to specify locking states; e.g., “state [001],” where X = value of WP#, Y = bit DQ1of

the Block Lock status register, and Z = bit DQ0of the Block Lock status register. Table 9, “Block

Locking State Transitions” on page 28 defines all of these possible locking states.

Table 7. Status Register Bit Definition

WSMS ESS ES PS VPPS PSS BLS R

76543210

NOTES:

SR.7 WRITE STATE MACHINE STATUS (WSMS)

1=Ready

0=Busy

Check Write State Machine bit first to determine Word Program

or Block Erase completion, before checking program or erase-

status bits.

SR.6 = ERASE-SUSPEND STATUS (ESS)

1 = Erase Suspended

0 = Erase In Progress/Completed

When Erase Suspend is issued, WSM halts execution and sets

both WSMS and ESS bits to “1.” ESS bit remains set to “1” until

an Erase Resume command is issued.

SR.5 = ERASE STATUS (ES)

1=ErrorInBlockErase

0 = Successful Block Erase

When this bit is set to “1,” WSM has applied the max. number

of erase pulses to the block and is still unable to verify

successful block erasure.

SR.4 = PROGRAM STATUS (PS)

1 = Error in Programming

0 = Successful Programming

When this bit is set to “1,” WSM has attempted but failed to

program a word/byte.

SR.3 = VPP STATUS (VPPS)

1=V

PP Low Detect, Operation Abort

0=V

PP OK

The VPP status bit does not provide continuous indication of

VPP level. The WSM interrogates VPP level only after the

Program or Erase command sequences have been entered,

and informs the system if VPP has not been switched on. The

VPP is also checked before the operation is verified by the

WSM. The VPP status bit is not guaranteed to report accurate

feedback between VPPLK and VPP1Min.

SR.2 = PROGRAM SUSPEND STATUS (PSS)

1 = Program Suspended

0 = Program in Progress/Completed

When Program Suspend is issued, WSM halts execution and

sets both WSMS and PSS bits to “1.” PSS bit remains set to “1”

until a Program Resume command is issued.

SR.1 = BLOCK LOCK STATUS

1=Prog/Eraseattemptedonalockedblock;Operation

aborted.

0 = No operation to locked blocks

If a Program or Erase operation is attempted to one of the

locked blocks, this bit is set by the WSM. The operation

specified is aborted and the device is returned to read status

mode.

SR.0 = RESERVED FOR FUTURE ENHANCEMENTS (R) This bit is reserved for future use and should be masked out

when polling the status register.

NOTE: A Command-Sequence Error is indicated when SR.4, SR.5, and SR.7 are set.

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26 Datasheet

4.3.1 Locking Operation

The following concisely summarizes the locking functionality.

•All blocks power-up locked, then can be unlocked or locked with the Unlock and Lock

commands.

•The Lock-Down command locks a block and prevents it from being unlocked when WP# = 0.

— When WP# = 1, Lock-Down is overridden and commands can unlock/lock locked-down

blocks.

— When WP# returns to 0, locked-down blocks return to Lock Down.

— Lock Down is cleared only when the device is reset or powered down.

The locking status of each block can be set to Locked, Unlocked, and Lock Down, each of which

will be described in the following sections. Table 9 on page 28 is a comprehensive state table for

the locking functions; Figure 16 on page 56 is a flowchart for Locking operations.

4.3.1.1 Locked State

The default status of all blocks upon power-up or reset is locked (states [001] or [101]). Locked

blocks are fully protected from alteration. Any Program or Erase operations attempted on a locked

block will return an error on bit SR.1 of the status register. The status of a locked block can be

changed to Unlocked or Lock Down using the appropriate software commands. An Unlocked

block can be locked by writing the Lock command sequence, 60H followed by 01H.

4.3.2 Unlocked State

Unlocked blocks (states [000], [100], [110]) can be programmed or erased. All unlocked blocks

return to the Locked state when the device is reset or powered down. The status of an unlocked

block can be changed to Locked or Locked Down using the appropriate software commands. A

Locked block can be unlocked by writing the Unlock command sequence, 60H followed by D0H.

4.3.3 Lock-Down State

Blocks that are Locked Down (state [011]) are protected from Program and Erase operations (just

like Locked blocks), but their protection status cannot be changed using software commands alone.

A Locked or Unlocked block can be Locked Down by writing the Lock-Down command sequence,

60H followed by 2FH. Locked-Down blocks revert to the Locked state when the device is reset or

powered down.

The Lock-Down function depends on the WP# input pin. When WP# = 0, blocks in Lock Down

[011] are protected from program, erase, and lock status changes. When WP# = 1, the Lock-Down

function is disabled ([111]) and Locked-Down blocks can be individually unlocked by software

command to the [110] state, where they can be erased and programmed. These blocks can then be

relocked [111] and unlocked [110] as required while WP# remains high. When WP# goes low,

blocks that were previously Locked Down return to the Lock-Down state [011], regardless of any

changes made while WP# was high. Device reset or power-down resets all blocks, including those

in Lock-Down, to Locked state.

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Datasheet 27

4.3.4 Reading Block-Lock Status

The Lock status of every block can be read in the configuration-read mode of the device. To enter

this mode, write 90H to the device. Subsequent reads at Block Address + 00002 will output the

Lock status of that block. The Lock status is represented by DQ0and DQ1.DQ

0indicates the Block

Lock/Unlock status and is set by the Lock command and cleared by the Unlock command. It is also

automatically set when entering Lock Down. DQ1indicates Lock-Down status, and is set by the

Lock-Down command. It cannot be cleared by software—only by device reset or power-down.

4.3.5 Locking Operations during Erase Suspend

Changes to block-lock status can be performed during an erase-suspend by using the standard

locking command sequences to Unlock, Lock, or Lock Down a block. This is useful in the case

when another block needs to be updated while an Erase operation is in progress.

To change block locking during an Erase operation, first write the Erase Suspend command (B0H),

then check the status register until it indicates that the Erase operation has been suspended. Next,

write the preferred Lock command sequence to a block and the Lock status will be changed. After

completing any preferred Lock, Read, or Program operations, resume the Erase operation with the

Erase Resume command (D0H).

If a block is Locked or Locked Down during a Suspended Erase of the same block, the locking

status bits will be changed immediately, but when the Erase is resumed, the Erase operation will

complete.

Locking operations cannot be performed during a Program Suspend. Refer to Appendix A for

detailed information on which commands are valid during Erase Suspend.

4.3.6 Status Register Error Checking

Using nested-locking or program-command sequences during Erase Suspend can introduce

ambiguity into status register results.

Since locking changes are performed using a two-cycle command sequence, e.g., 60H followed by

01H to lock a block, following the Configuration Setup command (60H) with an invalid command

will produce a Lock-Command error (SR.4 and SR.5 will be set to 1) in the status register. If a

Lock-CommanderroroccursduringanEraseSuspend,SR.4andSR.5willbesetto1andwill

remain at 1 after the Erase is resumed. When Erase is complete, any possible error during the Erase

cannot be detected via the status register because of the previous Lock-Command error.

A similar situation happens if an error occurs during a Program-Operation error nested within an

Erase Suspend.

Table 8. Block Lock Status

Item Address Data

Block Lock Configuration XX002 LOCK

•BlockIsUnlocked DQ

0=0

•BlockIsLocked DQ

0=1

•Block Is Locked-Down DQ1=1

28F800C3, 28F160C3, 28F320C3, 28F640C3

28 Datasheet

4.4 128-Bit Protection Register

The 3-Volt Advanced+ Boot Block architecture includes a 128-bit protection register than can be

used to increase the security of a system design. For example, the number contained in the

protection register can be used to “mate” the flash component with other system components, such

as the CPU or ASIC, preventing device substitution. The Intel application note, AP-657 Designing

with the Advanced+ Boot Block Flash Memory Architecture, contains additional application

information.

The 128 bits of the protection register are divided into two 64-bit segments. One of the segments is

programmed at the Intel factory with a unique 64-bit number, which is unchangeable. The other

segment is left blank for customer designs to program, as preferred. Once the customer segment is

programmed, it can be locked to prevent reprogramming.

4.4.1 Reading the Protection Register

The protection register is read in the configuration-read mode. The device is switched to this mode

by writing the Read Configuration command (90H). Once in this mode, read cycles from addresses

shown in Appendix G retrieve the specified information. To return to read-array mode, write the

Read Array command (FFH).

Table 9. Block Locking State Transitions

Current State

Erase/Prog

Allowed?

Lock Command Input Result (Next State)

XYZ

Lock Unlock Lock-Down

WP# DQ1DQ0Name

0 0 0 “Unlocked” Yes Goes To [001] No Change Goes To [011]

0 0 1 “Locked” (Default) No No Change Goes To [000] Goes To [011]

0 1 1 “Locked-Down” No No Change No Change No Change

1 0 0 “Unlocked” Yes Goes To [101] No Change Goes To [111]

1 0 1 “Locked” No No Change Goes To [100] Goes To [111]

1 1 0 Lock-Down Disabled Yes Goes To [111] No Change Goes To [111]

1 1 1 Lock-Down Disabled No No Change Goes To [110] No Change

NOTES:

1. In this table, the notation [XYZ] denotes the locking state of a block, where X = WP#, Y = DQ1, and Z = DQ0.Thecurrent

locking state of a block is defined by the state of WP# and the two bits of the block-lock status (DQ0,DQ

1). DQ0indicates if a

block is locked (1) or unlocked (0). DQ1indicates if a block has been Locked Down (1) or not (0).

2. At power-up or device reset, all blocks default to Locked state [001] (if WP# = 0). Holding WP# = 0 is the recommended

default.

3. The “Erase/Program Allowed?” column shows whether Erase and Program operations are enabled (Yes) or disabled (No) in

that block’s current Lock state.

4. The “Lock Command Input Result [Next State]” column shows the result of writing the three Lock commands (Lock, Unlock,

Lock-Down) in the current Lock state. For example, “Goes To [001]” would mean that writing the command to a block in the

current Lock state would change it to [001].

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 29

4.4.2 Programming the Protection Register

The protection register bits are programmed using the two-cycle Protection Program command.

The 64-bit number is programmed 16 bits at a time for word-wide parts, and eight bits at a time for

byte-wide parts.

First, write the Protection Program Setup command, C0H. The next write to the device will latch in

address and data, and program the specified location. The allowable addresses are shown in

Appendix G.SeeFigure 17, “Protection Register Programming Flowchart” on page 57. Attempts

to address Protection Program commands outside the defined protection register address space

should not be attempted. This space is reserved for future use. Attempting to program to a

previously locked protection register segment will result in a Status Register error (Program Error

bit SR.4 and Lock Error bit SR.1 will be set to 1).

4.4.3 Locking the Protection Register

The user-programmable segment of the protection register is lockable by programming Bit 1 of the

PR-LOCK location to 0. Bit 0 of this location is programmed to 0 at the Intel factory to protect the

unique device number. This bit is set using the Protection Program command to program “FFFD”

to the PR-LOCK location. After these bits have been programmed, no further changes can be made

to the values stored in the protection register. Protection Program commands to a locked section

will result in a Status Register error (Program Error bit SR.4 and Lock Error bit SR.1 will be set to

1). Protection register lockout state is not reversible.

0645_05

4.5 VPP Program and Erase Voltages

Intel 3-Volt Advanced+ Boot Block products provide in-system programming and erase in the

1.65 V–3.6 V range. For fast production programming, it also includes a low-cost, backward-

compatible 12-V programming feature.

4.5.1 Improved 12-Volt Production Programming

When VPP is between 1.65 V and 3.6 V, all program and erase current is drawn through the VCC

pin. Note that if VPP is driven by a logic signal, VIH min = 1.65 V. That is, VPP must remain above

1.65 V to perform in-system flash modifications. When VPP is connected to a 12 V power supply,

Figure 5. Protection Register Memory Map

4 Words

Factory Programmed

4 Words

User Programmed

PR Lock

88H

85H

84H

81H

80H

28F800C3, 28F160C3, 28F320C3, 28F640C3

30 Datasheet

the device draws program and erase current directly from the VPP pin. This eliminates the need for

an external switching transistor to control the voltage VPP

.Figure6onpage30shows examples of

how the flash power supplies can be configured for various usage models.

The 12-V VPP mode enhances programming performance during the short period of time typically

found in manufacturing processes; however, it is not intended for extended use. 12 V may be

applied to VPP during Program and Erase operations for a maximum of 1000 cycles on the main

blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80

hours maximum. Stressing the device beyond these limits may cause permanent damage.

4.5.2 VPP ≤VPPLK for Complete Protection

In addition to the flexible block locking, the VPP programming voltage can be held low for absolute

hardware write protection of all blocks in the flash device. When VPP is below VPPLK,any

Program or Erase operation will result in a error, prompting the corresponding status-register bit

(SR.3) to be set.

0645_06

NOTE:

1. A resistor can be used if the VCC supply can sink adequate current based on resistor value. See AP-657

Designing with the Advanced+ Boot Block Flash Memory Architecture for details.

4.6 Power Consumption

Intel Flash devices have a tiered approach to power savings that can significantly reduce overall

system power consumption. The Automatic Power Savings (APS) feature reduces power

consumption when the device is selected but idle. If the CE# is deasserted, the flash enters its

standby mode, where current consumption is even lower. The combination of these features can

minimize memory power consumption, and therefore, overall system power consumption.

Figure 6. Example Power Supply Configurations

12 V Fast Programming

Absolute Write Protection With V

≤

PPLK

System Supply

12 V Supply

≤

Ω

System Supply

12 V Supply

Low Voltage and 12 V Fast Programming

System Supply

Prot#

(Logic Signal)

System Supply

Low-Voltage Programming

Absolute Write Protection via Logic Signal

(Note 1)

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 31

4.6.1 Active Power (Program/Erase/Read)

With CE# at a logic-low level and RP# at a logic-high level, the device is in the active mode. Refer

to the DC Characteristic tables for ICC current values. Active power is the largest contributor to

overall system power consumption. Minimizing the active current could have a profound effect on

system power consumption, especially for battery-operated devices.

4.6.2 Automatic Power Savings (APS)

Automatic Power Savings provides low-power operation during read mode. After data is read from

the memory array and the address lines are quiescent, APS circuitry places the device in a mode

where typical current is comparable to ICCS. The flash stays in this static state with outputs valid

until a new location is read.

4.6.3 Standby Power

When CE# is at a logic-high level (VIH) and the device is in read mode, the flash memory is in

standby mode, which disables much of the device’s circuitry and substantially reduces power

consumption. Outputs are placed in a high-impedance state independent of the status of the OE#

signal. If CE# transitions to a logic-high level during Erase or Program operations, the device will

continue to perform the operation and consume corresponding active power until the operation is

completed.

System engineers should analyze the breakdown of standby time versus active time, and quantify

the respective power consumption in each mode for their specific application. This approach will

provide a more accurate measure of application-specific power and energy requirements.

4.6.4 Deep Power-Down Mode

The deep power-down mode is activated when RP# = VIL (GND ±0.2 V). During read modes,

RP# going low de-selects the memory and places the outputs in a high-impedance state. Recovery

from deep power-down requires a minimum time of tPHQV for Read operations, and tPHWL/tPHEL

for Write operations.

During program or erase modes, RP# transitioning low will abort the in-progress operation. The

memory contents of the address being programmed or the block being erased are no longer valid as

the data integrity has been compromised by the abort. During deep power-down, all internal

circuits are switched to a low-power savings mode (RP# transitioning to VIL or turning off power

to the device clears the status register).

4.7 Power and Reset Considerations

4.7.1 Power-Up/Down Characteristics

In order to prevent any condition that may result in a spurious write or erase operation, it is

recommended to power-up VCC, VCCQ and S-VCC together. Conversely, VCC and VCCQ must

power-down together.

It is also recommended to power-up VPP with or slightly after VCC. Conversely, VPP must

powerdown with or slightly before VCC.

28F800C3, 28F160C3, 28F320C3, 28F640C3

32 Datasheet

If VCCQ and/or VPP are not connected to the VCC supply, then VCC should attain VCCMin

before applying VCCQ and VPP. Device inputs should not be driven before supply voltage =

VCCMin.

Power supply transitions should only occur when RP# is low.

4.7.2 RP# Connected to System Reset

The use of RP# during system reset is important with automated program/erase devices since the

system expects to read from the flash memory when it comes out of reset. If a CPU reset occurs

without a flash memory reset, proper CPU initialization will not occur because the flash memory

may be providing status information instead of array data. Intel recommends connecting RP# to the

system CPU RESET# signal to allow proper CPU/flash initialization following system reset.

System designers must guard against spurious writes when VCC voltages are above VLKO. Because

both WE# and CE# must be low for a command write, driving either signal to VIH will inhibit

writes to the device. The CUI architecture provides additional protection since alteration of

memory contents can only occur after successful completion of the two-step command sequences.

The device is also disabled until RP# is brought to VIH, regardless of the state of its control inputs.

By holding the device in reset (RP# connected to system POWERGOOD) during power-up/down,

invalid bus conditions during power-up can be masked, providing yet another level of memory

protection.

4.7.3 VCC,V

PP and RP# Transitions

The CUI latches commands as issued by system software and is not altered by VPP or CE#

transitions or WSM actions. Its default state upon power-up, after exit from reset mode or after

VCC transitions above VLKO (Lockout voltage), is read-array mode.

After any program or Block-Erase operation is complete (even after VPP transitions down to

VPPLK), the CUI must be reset to read-array mode via the Read Array command if access to the

flash-memory array is desired.

4.8 Power Supply Decoupling

Flash memory power-switching characteristics require careful device decoupling. System

designers should consider the following three supply current issues:

•Standby current levels (ICCS)

•Read current levels (ICCR)

•Transient peaks produced by falling and rising edges of CE#.

Transient current magnitudes depend on the device outputs’ capacitive and inductive loading. Two-

line control and proper decoupling capacitor selection will suppress these transient voltage peaks.

Each flash device should have a 0.1 µF ceramic capacitor connected between each VCC and GND,

and between its VPP and GND. These high- frequency, inherently low-inductance capacitors should

be placed as close as possible to the package leads.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 33

5.0 Electrical Specifications

5.1 Absolute Maximum Ratings

Warning: Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.

These are stress ratings only. Operation beyond the “Operating Conditions” is not recommended

and extended exposure beyond the “Operating Conditions” may affect device reliability

NOTICE: Specifications are subject to change without notice. Verify with your local Intel Sales office that you have

the latest datasheet before finalizing a design.

Parameter Maximum Rating

Extended Operating Temperature

During Read –40 °C to +85 °C

During Block Erase and Program –40 °C to +85 °C

Temperature under Bias –40 °C to +85 °C

Storage Temperature –65 °C to +125 °C

VoltageOnAnyPin(exceptV

CC and VPP) with Respect to GND –0.5 V to +3.7 V(1)

VPP Voltage (for Block Erase and Program) with Respect to GND –0.5 V to +13.5 V(1,2,3)

VCC and VCCQ Supply Voltage with Respect to GND –0.2 V to +3.6 V

Output Short Circuit Current 100 mA(4)

NOTES:

1. Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may

undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is VCC

+0.5 V which, during transitions, may overshoot to VCC +2.0 V for periods <20 ns.

2. Maximum DC voltage on VPP may overshoot to +14.0 V for periods <20 ns.

3. VPP Program voltage is normally 1.65 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be

done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter

blocks during program/erase. VPP may be connected to 12 V for a total of 80 hours maximum.

See Section 4.5 for details.

4. Output shorted for no more than one second. No more than one output shorted at a time.

28F800C3, 28F160C3, 28F320C3, 28F640C3

34 Datasheet

5.2 Operating Conditions

5.3 Capacitance

TA= 25 °C, f = 1 MHz

Table 10. Temperature and Voltage Operating Conditions

Symbol Parameter Notes Min Max Units

TAOperating Temperature –40 +85 °C

VCC1 VCC Supply Voltage 1, 2 2.7 3.6 Volts

VCC2 1, 2 3.0 3.6

VCCQ1

I/O Supply Voltage

12.73.6

VoltsVCCQ2 1.65 2.5

VCCQ3 1.8 2.5

VPP1 Supply Voltage 1 1.65 3.6 Volts

VPP2 1, 3 11.4 12.6 Volts

Cycling Block Erase Cycling 3 100,000 Cycles

NOTES:

1. VCC and VCCQ must share the same supply when they are in the VCC1 range.

2. VCCMax = 3.3 V for 0.25µm 32-Mbit devices.

3. Applying VPP = 11.4 V–12.6 V during a program/erase can only be done for a maximum of 1000 cycles on

the main blocks and 2500 cycles on the parameter blocks. VPP maybeconnectedto12Vforatotalof

80 hours maximum. See Section 4.5 for details.

Sym Parameter Notes Typ Max Units Conditions

CIN Input Capacitance 1 6 8 pF VIN =0V

COUT Output Capacitance 1 10 12 pF VOUT =0V

NOTE: Sampled, not 100% tested.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 35

5.4 DC Characteristics

Sym Parameter

VCC 2.7V–3.6V 2.7V–2.85V 2.7V–3.3V

Unit Test ConditionsVCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V

Note Typ Max Typ Max Typ Max

ILI Input Load Current 1,2 ±1±1±1µA

VCC =V

CCMax

VCCQ =V

CCQMax

VIN =V

CCQ or GND

ILO

Output Leakage

Current 1,2 0.2 ±10 0.2 ±10 0.2 ±10 µA

VCC =V

CCMax

VCCQ =V

CCQMax

VIN =V

CCQ or GND

ICCS

VCC Standby

Current for 0.13

and0.18Micron

Product

1 7 15 20 50 150 250 µA VCC =V

CCMax

CE# = RP# = VCCQ

or during Program/

Erase Suspend

WP# = VCCQ or GND

VCC Standby

Current for 0.25

Micron Product

110252050150250µA

ICCD

VCC Power-Down

Current for 0.13

and0.18Micron

Product

1,2 7 15 7 20 7 20 µA VCC =V

CCMax

VCCQ =V

CCQMax

VIN =V

CCQ or GND

RP#=GND±0.2V

VCC Power-Down

Current for 0.25

Product

1,2 7 25 7 25 7 25 µA

ICCR

VCC Read Current

for 0.13 and 0.18

Micron Product

1,2,3 9 18 8 15 9 15 mA VCC =V

CCMax

VCCQ =V

CCQMax

OE# = VIH ,CE#=V

f=5MHz,I

OUT=0 mA

Inputs = VIL or VIH

VCC Read Current

for 0.25 Micron

Product

1,2,3 10 18 8 15 9 15 mA

IPPD

VPP Deep Power-

Down Current 1 0.2 5 0.2 5 0.2 5 µA RP#=GND±0.2V

VPP ≤VCC

ICCW

VCC Program

Current 1,4

18 55 18 55 18 55 mA VPP =VPP1,

Program in Progress

8 2210301030mA

VPP =V

PP2 (12v)

Program in Progress

ICCE VCC Erase Current 1,4

16 45 21 45 21 45 mA VPP =V

PP1,

EraseinProgress

8 1516451645mA

VPP =V

PP2 (12v) ,

EraseinProgress

ICCES

VCC Erase

Suspend Current 1,4 7 15 50 200 150 250 µA CE# = VCC, Erase

SuspendinProgress

IPPR VPP Read Current 1,4 2±15 2 ±15 2 ±15 µA VPP ≤VCC

50 200 50 200 50 200 µA VPP >V

IPPW

VPP Program

Current 1,4

0.05 0.1 0.05 0.1 0.05 0.1 mA VPP =VPP1,

Program in Progress

822822822mA

VPP =V

PP2 (12v)

Program in Progress

28F800C3, 28F160C3, 28F320C3, 28F640C3

36 Datasheet

IPPE VPP Erase Current 1,4 0.05 0.1 0.05 0.1 0.05 0.1 mA VPP =V

PP1,

EraseinProgress

VIL Input Low Voltage –0.4 VCC *

0.22 V –0.4 0.4 –0.4 0.4 V

VIH Input High Voltage 2.0 VCCQ

+0.3V

VCCQ

–0.4V

VCCQ

+0.3V

VCCQ

–0.4V

VCCQ

+0.3V V

VOL Output Low Voltage –0.1 0.1 -0.1 0.1 -0.1 0.1 V

VCC =V

CCMin

VCCQ =V

CCQMin

IOL =100µA

VOH

Output High

Voltage

VCCQ

–0.1V

VCCQ

–0.1V

VCCQ

–0.1V V

VCC =V

CCMin

VCCQ =V

CCQMin

IOH = –100 µA

VPPLK

VPP Lock-Out

Voltage 61.01.01.0V

Complete Write

Protection

VPP1 VPP during

Program / Erase

Operations

6 1.65 3.6 V

VPP2 6, 7 11.4 12.6 V

VLKO

VCC Prog/Erase

Lock Voltage 1.5 1.5 1.5 V

VLKO2

VCCQ Prog/Erase

Lock Voltage 1.2 1.2 1.2 V

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at nominal VCC,T

A=+25°C.

2. The test conditions VCCMax, VCCQMax, VCCMin, and VCCQMin refer to the maximum or minimum VCC or VCCQ voltage listed

at the top of each column. VCCMax = 3.3 V for 0.25µm 32-Mbit devices.

3. Automatic Power Savings (APS) reduces ICCR to approximately standby levels in static operation (CMOS inputs).

4. Sampled, not 100% tested.

5. ICCES and ICCWS are specified with device de-selected. If device is read while in erase suspend, current draw is sum of ICCES

and ICCR. If the device is read while in program suspend, current draw is the sum of ICCWS and ICCR.

6. Erase and Program are inhibited when VPP <V

PPLK and not guaranteed outside the valid VPP ranges of VPP1 and VPP2.

7. Applying VPP = 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks and

2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum. See Section 4.4 for

details.

Sym Parameter

VCC 2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V

Unit Test ConditionsVCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V

Note Typ Max Typ Max Typ Max

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 37

0645_07

0645_08

Figure 7. Input/Output Reference Waveform

INPUT OUTPUT

TEST POINTS

CCQ

0.0

CCQ

Figure 8. Test Configuration

Device

Under Test Out

CCQ

Test Configuration CL(pF) R1(Ω)R2(Ω)

2.7 V–3.6 V Standard Test 50 25K 25K

NOTE: CLincludes jig capacitance.

28F800C3, 28F160C3, 28F320C3, 28F640C3

38 Datasheet

4.5 AC Characteristics—Read Operations

#Sym Parameter

Density 8 Mbit

Unit

Product 90 ns 110 ns

VCC 3.0V–3.6V 2.7V–3.6V 3.0V–3.6V 2.7V–3.6V

Note Min Max Min Max Min Max Min Max

R1 tAVAV Read Cycle Time 80 90 100 110 ns

R2 tAVQV Address to Output Delay 80 90 100 110 ns

R3 tELQV CE# to Output Delay 1 80 90 100 110 ns

R4 tGLQV OE# to Output Delay 1 30 30 30 30 ns

R5 tPHQV RP# to Output Delay 150 150 150 150 ns

R6 tELQX CE#toOutputinLowZ 2 0 0 0 0 ns

R7 tGLQX OE# to Output in Low Z 2 0 0 0 0 ns

R8 tEHQZ CE#toOutputinHighZ 2 20 20 20 20 ns

R9 tGHQZ OE# to Output in High Z 2 20 20 20 20 ns

R10 tOH

Output Hold from

Address, CE#, or OE#

Change, Whichever

Occurs First

20 0 0 0 ns

NOTES:

1.OE#maybedelayeduptot

ELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

3. See Figure 9, “AC Waveform: Read Operations” on page 42.

4. See Figure 7, “Input/Output Reference Waveform” on page 37 for timing measurements and maximum allowable input slew

rate.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 39

AC Characteristics—Read Operations

#Sym

Para-

meter

Density 16 Mbit

Unit

Product 70 ns 80 ns 90 ns 110 ns

VCC 2.7 V–3.6 V 2.7 V–3.6 V 3.0 V–3.6 V 2.7 V–3.6 V 3.0 V–3.6 V 2.7 V–3.6 V

MinMaxMinMaxMinMaxMinMaxMinMaxMinMax

R1 tAVAV ReadCycleTime70808090100110ns

R2 tAVQV Address to Output

Delay 70 80 80 90 100 110 ns

R3 tELQV CE# to Output

Delay(1) 70 80 80 90 100 110 ns

R4 tGLQV OE# to Output

Delay(1) 20 20 30 30 30 30 ns

R5 tPHQV RP# to Output

Delay 150 150 150 150 150 150 ns

R6 tELQX CE# to Output in

Low Z(2) 000000ns

R7 tGLQX OE# to Output in

Low Z(2) 000000ns

R8 tEHQZ CE# to Output in

High Z(2) 20 20 20 20 20 20 ns

R9 tGHQZ OE# to Output in

High Z(2) 20 20 20 20 20 20 ns

R10 tOH

Output Hold from

Address, CE#, or

OE# Change,

Whichever Occurs

First(2)

000000ns

NOTES:

1.OE#maybedelayeduptot

ELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

3. See Figure 9, “AC Waveform: Read Operations” on page 42.

4. See Figure 7, “Input/Output Reference Waveform” on page 37 for timing measurements and maximum allowable input slew

rate.

28F800C3, 28F160C3, 28F320C3, 28F640C3

40 Datasheet

AC Characteristics—Read Operations, continued

#Sym

Para-

meter

Density 32 Mbit

Unit

Product 70 ns 90 ns 100 ns 110 ns

VCC 2.7 V–3.6 V 2.7 V–3.6 V 3.0 V–3.3 V 2.7 V–3.3 V 3.0 V–3.3 V 2.7 V–3.3 V

Min Max Min Max Min Max Min Max Min Max Min Max

R1 tAVAV

Read Cycle Time 70 90 90 100 100 110 ns

R2 tAV QV

Address to Output

Delay 70 90 90 100 100 110 ns

R3 tELQV

CE# to Output

Delay(1) 70 90 90 100 100 110 ns

R4 tGLQV

OE# to Output

Delay(1) 20 20 30 30 30 30 ns

R5 tPHQV RP# to Output Delay 150 150 150 150 150 150 ns

R6 tELQX

CE# to Output in

Low Z(2) 000000ns

R7 tGLQX

OE# to Output in

Low Z(2) 000000ns

R8 tEHQZ

CE# to Output in

High Z(2) 20 20 20 20 20 20 ns

R9 tGHQZ

OE# to Output in

High Z(2) 20 20 20 20 20 20 ns

R10 tOH

Output Hold from

Address, CE#, or

OE# Change,

Whichever Occurs

First(2)

000000ns

NOTES:

1.OE#maybedelayeduptot

ELQV–tGLQV after the falling edge of CE# without impact on tELQV.

2. Sampled, but not 100% tested.

3. See Figure 9, “AC Waveform: Read Operations” on page 42.

4. See Figure 7, “Input/Output Reference Waveform” on page 37 for timing measurements and maximum allowable input slew

rate.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 41

AC Characteristics—Read Operations, continued

#Sym Parameter

Density 64 Mbit

Unit

Product 70 ns 80 ns

VCC 2.7 V–3.6 V 2.7 V–3.6 V

Note Min Max Min Max

R1 tAVAV Read Cycle Time 70 80 ns

R2 tAVQV Address to Output Delay 70 80 ns

R3 tELQV CE# to Output Delay 1 70 80 ns

R4 tGLQV OE# to Output Delay 1 20 20 ns

R5 tPHQV RP# to Output Delay 150 150 ns

R6 tELQX CE# to Output in Low Z 2 0 0 ns

R7 tGLQX OE# to Output in Low Z 2 0 0 ns

R8 tEHQZ CE#toOutputinHighZ 2 20 20 ns

R9 tGHQZ OE#toOutputinHighZ 2 20 20 ns

R10 tOH

Output Hold from Address, CE#, or OE#

Change, Whichever Occurs First 20 0 ns

NOTES:

1.OE#maybedelayeduptot

ELQV–tGLQV after the falling edge of CE# without impact on tELQV

2. Sampled, but not 100% tested.

3. See Figure 9, “AC Waveform: Read Operations” on page 42.

4. See Figure 7, “Input/Output Reference Waveform” on page 37 for timing measurements and maximum

allowable input slew rate.

28F800C3, 28F160C3, 28F320C3, 28F640C3

42 Datasheet

Figure 9. AC Waveform: Read Operations

High Z

Valid Output

Address Stable

Data Valid

Device

Address Selection

Standby

ADDRESSES (A)

VIH

VIL

VIH

VIL

CE# (E)

VIH

VIL

VOH

VOL

VIH

VIL

OE# (G)

WE# (W)

DATA (D/Q)

RP# (P)

High Z

VIH

VIL

R10

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 43

4.6 AC Characteristics—Write Operations

Table 11. AC Characteristics, Write Operations (sheet 1 of 2)

#Sym Parameter

Density 8 Mbit

Unit

Product 90 ns 110 ns

3.0 V – 3.6 V 80 100

2.7V–3.6V 90 110

Note Min Min Min Min

W1 tPHWL /

tPHEL

RP# High Recovery to WE# (CE#) Going Low 150 150 150 150 ns

W2 tELWL /

tWLEL

CE# (WE#) Setup to WE# (CE#) Going Low 0 0 0 0 ns

W3 tWLWH /

tELEH

WE#(CE#)PulseWidth 1 50 60 70 70 ns

W4 tDVWH /

tDVEH

Data Setup to WE# (CE#) Going High 2 50 50 60 60 ns

W5 tAVW H /

tAVEH

Address Setup to WE# (CE#) Going High 2 50 60 70 70 ns

W6 tWHEH /

tEHWH

CE# (WE#) Hold Time from WE# (CE#) High 0 0 0 0 ns

W7 tWHDX /

tEHDX

Data Hold Time from WE# (CE#) High 2 0 0 0 0 ns

W8 tWHAX /

tEHAX

Address Hold Time from WE# (CE#) High 2 0 0 0 0 ns

W9 tWHWL /

tEHEL

WE# (CE#) Pulse Width High 1 30 30 30 30 ns

W10 tVPWH /

tVPEH

VPP Setup to WE# (CE#) Going High 3 200 200 200 200 ns

W11 tQVVL VPP Hold from Valid SRD 3 0 0 0 0 ns

W12 tBHWH /

tBHEH

WP# Setup to WE# (CE#) Going High 3 0 0 0 0 ns

W13 tQVBL WP# Hold from Valid SRD 3 0 0 0 0 ns

W14 tWHGL WE# High to OE# Going Low 3 30 30 30 30 ns

NOTES:

1. Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high

(whichever goes high first). Hence, tWP =t

WLWH =t

ELEH =t

WLEH =t

ELWH. Similarly, write pulse width high (tWPH) is defined

from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low first). Hence,

tWPH =t

WHWL =t

EHEL =t

WHEL =t

EHWL.

2. Refer to Table 5, “Command Bus Operations” on page 23 for valid AIN or DIN.

3. Sampled, but not 100% tested.

4. Write timing characteristics during erase suspend are the same as during Write-only operations.

5. See Figure 7, “Input/Output Reference Waveform” on page 37 for timing measurements and maximum allowable input slew

rate.

6. See Figure 9, “AC Waveform: Read Operations” on page 42.

7. VCCMax = 3.3 V for 32-Mbit and 64-Mbit densities.

28F800C3, 28F160C3, 28F320C3, 28F640C3

44 Datasheet

Table 12. AC Characteristics, Write Operations (sheet 2 of 2)

#SymParameter

Density 16 Mbit

Unit

Product 70 ns 80 ns 90 ns 110 ns

3.0 V – 3.6 V 80 100

2.7V–3.6V 70 80 90 110

Note Min Min Min Min Min Min

W1 tPHWL /

tPHEL

RP# High Recovery to WE#

(CE#) Going Low 150 150 150 150 150 150 ns

W2 tELWL /

tWLEL

CE#(WE#)SetuptoWE#

(CE#) Going Low 000000ns

W3 tWLWH /

tELEH

WE#(CE#)PulseWidth 1 455050607070ns

W4 tDVWH /

tDVEH

Data Setup to WE# (CE#)

Going High 2 404050506060ns

W5 tAVWH /

tAVEH

Address Setup to WE# (CE#)

Going High 2 505050607070ns

W6 tWHEH /

tEHWH

CE# (WE#) Hold Time from

WE# (CE#) High 000000ns

W7 tWHDX /

tEHDX

Data Hold Time from WE#

(CE#) High 2000000ns

W8 tWHAX /

tEHAX

AddressHoldTimefromWE#

(CE#) High 2000000ns

W9 tWHWL /

tEHEL

WE# (CE#) Pulse Width High 1 25 30 30 30 30 30 ns

W10 tVPWH /

tVPEH

VPP SetuptoWE#(CE#)

Going High 3 200 200 200 200 200 200 ns

W11 tQVVL VPP HoldfromValidSRD 3000000ns

W12 tBHWH /

tBHEH

WP# Setup to WE# (CE#)

Going High 3000000ns

W13 tQVBL WP#HoldfromValidSRD 3000000ns

W14 tWHGL WE#HightoOE#GoingLow3 303030303030ns

NOTES:

1. Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high

(whichever goes high first). Hence, tWP =t

WLWH =t

ELEH =t

WLEH =t

ELWH. Similarly, write pulse width high (tWPH)isdefined

from CE# or WE# going high (whichever goes high first) to CE# or WE# going low (whichever goes low first). Hence,

tWPH =t

WHWL =t

EHEL =t

WHEL =t

EHWL.

2. Refer to Table 5, “Command Bus Operations” on page 23 for valid AIN or DIN.

3. Sampled, but not 100% tested.

4. Write timing characteristics during erase suspend are the same as during Write-only operations.

5. See Figure 7, “Input/Output Reference Waveform” on page 37 for timing measurements and maximum allowable input slew

rate.

6. See Figure 9, “AC Waveform: Read Operations” on page 42.

7. VCCMax = 3.3 V for 32-Mbit and 64-Mbit densities.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 45

AC Characteristics—Write Operations, continued

#Sym Parameter

Density 32 Mbit

Unit

Product 70 ns 90 ns 100 ns 110 ns

3.0 V – 3.6 V(4) 90 100

2.7 V – 3.6 V(4) 70 90 100 110

Note Min Min Min Min Min Min

W1 tPHWL /

tPHEL

RP#HighRecoverytoWE#

(CE#) Going Low 150 150 150 150 150 150 ns

W2 tELWL /

tWLEL

CE#(WE#)SetuptoWE#

(CE#) Going Low 000000ns

W3 tWLWH /

tELEH

WE#(CE#)PulseWidth 1 45 60 60 70 70 70 ns

W4 tDVWH /

tDVEH

DataSetuptoWE#(CE#)

Going High 2404050606060ns

W5 tAVWH /

tAVEH

Address Setup to WE# (CE#)

Going High 2506060707070ns

W6 tWHEH /

tEHWH

CE# (WE#) Hold Time from

WE# (CE#) High 000000ns

W7 tWHDX /

tEHDX

Data Hold Time from WE#

(CE#) High 2000000ns

W8 tWHAX /

tEHAX

Address Hold Time from WE#

(CE#) High 2000000ns

W9 tWHWL /

tEHEL

WE# (CE#) Pulse Width High 1 25 30 30 30 30 30 ns

W10 tVPWH /

tVPEH

VPP SetuptoWE#(CE#)

Going High 3 200 200 200 200 200 200 ns

W11 tQVVL VPP Hold from Valid SRD 3 0 0 0 0 0 0 ns

W12 tBHWH /

tBHEH

WP# Setup to WE# (CE#)

Going High 3000000ns

W13 tQVBL WP# Hold from Valid SRD 3 0 0 0 0 0 0 ns

W14 tWHGL WE# High to OE# Going Low 3 30 30 30 30 30 30 ns

28F800C3, 28F160C3, 28F320C3, 28F640C3

46 Datasheet

AC Characteristics—Write Operations, continued

#Sym Parameter

Density 64 Mbit

Unit

Product 70 ns 80 ns

3.0 V – 3.6 V

2.7V–3.6V 70 70

Note Min Min

W1 tPHWL /

tPHEL

RP# High Recovery to WE# (CE#) Going Low 150 150 ns

W2 tELWL /

tWLEL

CE# (WE#) Setup to WE# (CE#) Going Low 0 0 ns

W3 tWLWH /

tELEH

WE#(CE#)PulseWidth 1 45 60 ns

W4 tDVWH /

tDVEH

Data Setup to WE# (CE#) Going High 2 40 40 ns

W5 tAVW H /

tAVEH

Address Setup to WE# (CE#) Going High 2 50 60 ns

W6 tWHEH /

tEHWH

CE# (WE#) Hold Time from WE# (CE#) High 0 0 ns

W7 tWHDX /

tEHDX

Data Hold Time from WE# (CE#) High 2 0 0 ns

W8 tWHAX /

tEHAX

Address Hold Time from WE# (CE#) High 2 0 0 ns

W9 tWHWL /

tEHEL

WE# (CE#) Pulse Width High 1 25 30 ns

W10 tVPWH /

tVPEH

VPP Setup to WE# (CE#) Going High 3 200 200 ns

W11 tQVVL VPP Hold from Valid SRD 3 0 0 ns

W12 tBHWH /

tBHEH

WP# Setup to WE# (CE#) Going High 3 0 0 ns

W13 tQVBL WP# Hold from Valid SRD 3 0 0 ns

W14 tWHGL WE#HightoOE#GoingLow 3 30 30 ns

NOTES:

1. Write pulse width (tWP) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE#

going high (whichever goes high first). Hence, tWP =t

WLWH =t

ELEH =t

WLEH =t

ELWH. Similarly, write pulse

widthhigh(t

WPH) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going

low (whichever goes low first). Hence, tWPH =t

WHWL =t

EHEL =t

WHEL =t

EHWL.

2. Refer to Table 5, “Command Bus Operations” on page 23 for valid AIN or DIN.

3. Sampled, but not 100% tested.

4. VCCMax = 3.3 V for 0.25µm 32-Mbit devices.

5. Write timing characteristics during erase suspend are the same as during Write-only operations.

6. See Figure 7, “Input/Output Reference Waveform” on page 37 for timing measurements and maximum

allowable input slew rate.

7. See Figure 9, “AC Waveform: Read Operations” on page 42.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 47

4.7 Erase and Program Timings

Symbol Parameter

VPP 1.65 V–3.6 V 11.4 V–12.6 V

Unit

Note Typ(1) Max Typ(1) Max

tBWPB

4-KW Parameter Block

Word Program Time 2, 3 0.10 0.30 0.03 0.12 s

tBWMB

32-KW Main Block

Word Program Time 2, 3 0.8 2.4 0.24 1 s

tWHQV1 /t

EHQV1

Word Program Time for 0.13

and0.18MicronProduct 2, 3 12 200 8 185 µs

Word Program Time for 0.25

Micron Product 2, 3 22 200 8 185 µs

tWHQV2 /t

EHQV2

4-KW Parameter Block

Erase Time 2, 3 0.5 4 0.4 4 s

tWHQV3 /t

EHQV3

32-KW Main Block

Erase Time 2, 3 1 5 0.6 5 s

tWHRH1 /t

EHRH1 Program Suspend Latency 3 5 10 5 10 µs

tWHRH2 /t

EHRH2 Erase Suspend Latency 3 5 20 5 20 µs

NOTES:

1. Typical values measured at TA= +25 °C and nominal voltages.

2. Excludes external system-level overhead.

3. Sampled, but not 100% tested.

28F800C3, 28F160C3, 28F320C3, 28F640C3

48 Datasheet

NOTES:

1. CE# must be toggled low when reading Status Register Data. WE# must be inactive (high) when reading

Status Register Data.

a. VCC Power-Up and Standby.

b. Write Program or Erase Setup Command.

c. Write Valid Address and Data (for Program) or Erase Confirm Command.

d. Automated Program or Erase Delay.

e. Read Status Register Data (SRD): reflects completed Program/Erase operation.

f. WriteReadArrayCommand.

Figure 10. AC Waveform: Program and Erase Operations

AB C D E F

W11

W10

Valid

SRD

High Z

W5 W8

ADDRESSES [A]

CE# (WE#) [E(W)]

OE# [G]

WE# (CE) [W(E)]

DATA [D/Q]

WP#

PPH

[V]

PPH

RP# [P]

(Note 1)

W13W12

PPLK

W14

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 49

4.8 Reset Operations

Figure 11. AC Waveform: Reset Operations

RP# (P)

PLPH

RP# (P)

PLPH

(A) Reset during Read Mode

Abort

Complete PHQV

PHWL

PHEL

PHQV

PHWL

PHEL

(B) Reset during Program or Block Erase, <

PLPH

tPLR

PLRH

RP# (P)

PLPH

Abort

Complete PHQV

PHWL

PHEL

PLRH

Deep

Power-

Down

PLPH

tPLRH

Table 13. Reset Specifications

Symbol Parameter Notes

VCC 2.7V–3.6V

Unit

Min Max

tPLPH

RP# Low to Reset during Read

(If RP# is tied to VCC, this specification is not

applicable)

2,4 100 ns

tPLRH1 RP# Low to Reset during Block Erase 3,4 22 µs

tPLRH2 RP# Low to Reset during Program 3,4 12 µs

NOTES:

1. If tPLPH is < 100 ns the device may still reset but this is not guaranteed.

2. If RP# is asserted while a Block Erase or Word Program operation is not executing, the reset will complete

within 100 ns.

3. Sampled, but not 100% tested.

4. See Section 4.1.4 for a full description of these conditions.

28F800C3, 28F160C3, 28F320C3, 28F640C3

50 Datasheet

Appendix A WSM Current/Next States, Sheet 1 of 2

Command Input (and Next State)

Current State SR.

Data

When

Read

Array

(FFH)

Program

Setup (10/

40H)

Erase

Setup

(20H)

Erase

Confirm

(D0H)

Prog/Ers

Suspend

(B0H)

Prog/Ers

Resume

(D0)

Read

Status

(70H)

Clear

Status

(50H)

Read Array “1” Array Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

Read Status “1” Status Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

Read Config. “1” Config Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

Read Query “1” CFI Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

Lock Setup “1” Status Lock Command Error Lock

(Done)

Lock

Cmd. Error

Lock

(Done) Lock Cmd. Error

Lock Cmd. Error “1” Status Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

Lock Oper. (Done) “1” Status Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

Prot. Prog. Setup “1” Status Protection Register Program

Prot. Prog.

(Not Done) “0” Status Protection Register Program (Not Done)

Prot. Prog. (Done) “1” Status Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

Prog. Setup “1” Status Program

Program (Not

Done) “0” Status Program (Not Done) Prog. Sus.

Status Program (Not Done)

Prog. Susp. Status “1” Status Prog. Sus.

Read Array

Program Suspend

Read Array

Prog. (Not

Done)

Prog. Sus.

Rd. Array

Program

(Not Done)

Prog. Sus.

Status

Prog. Sus.

Rd. Array

Prog. Susp. Read

Array “1” Array Prog. Sus.

Read Array

Program Suspend

Read Array

Prog. (Not

Done)

Prog. Sus.

Rd. Array

Program

(Not Done)

Prog. Sus.

Status

Prog. Sus.

Rd. Array

Prog. Susp. Read

Config “1” Config Prog. Sus.

Read Array

Program Suspend

Read Array

Prog. (Not

Done)

Prog. Sus.

Rd. Array

Program

(Not Done)

Prog. Sus.

Status

Prog. Sus.

Rd. Array

Prog. Susp. Read

Query “1” CFI Prog. Sus.

Read Array

Program Suspend

Read Array

Prog. (Not

Done)

Prog. Sus.

Rd. Array

Program

(Not Done)

Prog. Sus.

Status

Prog. Sus.

Rd. Array

Program (Done) “1” Status Read Array Prog. Setup Ers. Setup Read Array Read

Status Read Array

Erase Setup “1” Status Erase Command Error

Erase

(Not

Done)

Erase Cmd.

Error

Erase

(Not Done) Erase Command Error

Erase Cmd. Error “1” Status Read Array Prog. Setup Ers. Setup Read Array Read

Status Read Array

Erase (Not Done) “0” Status Erase (Not Done) Erase Sus.

Status Erase (Not Done)

Ers. Susp. Status “1” Status Erase Sus.

Read Array Prog. Setup Ers. Sus.

Rd. Array Erase Ers. Sus.

Rd. Array Erase Erase Sus.

Status

Ers. Sus.

Rd. Array

Erase Susp. Array “1” Array Erase Sus.

Read Array Prog. Setup Ers. Sus.

Rd. Array Erase Ers. Sus.

Rd. Array Erase Erase Sus.

Status

Ers. Sus.

Rd. Array

Ers. Susp. Read

Config “1” Config Erase Sus.

Read Array Prog. Setup Ers. Sus.

Rd. Array Erase Ers. Sus.

Rd. Array Erase Erase Sus.

Status

Ers. Sus.

Rd. Array

Ers. Susp. Read

Query “1” CFI Erase Sus.

Read Array Prog. Setup Ers. Sus.

Rd. Array Erase Ers. Sus.

Rd. Array Erase Erase Sus.

Status

Ers. Sus.

Rd. Array

Erase (Done) “1” Status Read Array Prog. Setup Ers. Setup Read Array Read Sts. Read Array

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 51

Appendix A: WSM Current/Next States, Sheet 2 of 2

CommandInput(andNextState)

Current State Read Config

(90H)

Read Query

(98H)

Lock Setup

(60H) Prot. Prog.

Setup (C0H)

Lock Confirm

(01H)

Lock Down

Confirm

(2FH)

Unlock Confirm

(D0H)

Read Array Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Read Status Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Read Config. Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Read Query Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Lock Setup Locking Command Error Lock Operation (Done)

Lock Cmd. Error Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Lock Oper.

(Done) Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Prot. Prog. Setup Protection Register Program

Prot. Prog.

(Not Done) Protection Register Program (Not Done)

Prot. Prog.

(Done) Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Prog. Setup Program

Program

(Not Done) Program (Not Done)

Prog. Susp.

Status

Prog. Susp.

Read Config.

Prog. Susp.

Read Query Program Suspend Read Array Program

(Not Done)

Prog. Susp.

Read Array

Prog. Susp.

Read Config.

Prog. Susp.

Read Query Program Suspend Read Array Program

(Not Done)

Prog. Susp.

Read Config.

Prog. Susp.

Read Config.

Prog. Susp.

Read Query Program Suspend Read Array Program

(Not Done)

Prog. Susp.

Read Query.

Prog. Susp.

Read Config.

Prog. Susp.

Read Query Program Suspend Read Array Program

(Not Done)

Program

(Done) Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Erase

Setup Erase Command Error Erase

(Not Done)

Erase Cmd.

Error Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

Erase

(Not Done) Erase (Not Done)

Erase Susp.

Status

Ers. Susp. Read

Config.

Erase Suspend

Read Query Lock Setup Erase Suspend Read Array Erase

(Not Done)

Erase Suspend

Array

Ers. Susp. Read

Config.

Erase Suspend

Read Query Lock Setup Erase Suspend Read Array Erase

(Not Done)

Eras Sus. Read

Config

Erase Suspend

Read Config.

Erase Suspend

Read Query Lock Setup Erase Suspend Read Array Erase

(Not Done)

Eras Sus. Read

Query

Erase Suspend

Read Config.

Erase Suspend

Read Query Lock Setup Erase Suspend Read Array Erase

(Not Done)

Ers.(Done) Read Config. Read Query Lock Setup Prot. Prog. Setup Read Array

28F800C3, 28F160C3, 28F320C3, 28F640C3

52 Datasheet

Appendix B Program/Erase Flowcharts

Figure 12. Automated Word Programming Flowchart

Start

Write 40H

Program Address/Data

Read Status Register

SR.7 = 1?

Full Status

Check if Desired

Program Complete

Read Status Register

Data (See Above)

Range Error

Programming Error

Attempted Program to

Locked Block - Aborted

Program Successful

SR.3 =

SR.4 =

SR.1 =

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Repeat for subsequent programming operations.

SR Full Status Check can be done after each program or after a sequence of

program operations.

Write FFH after the last program operation to reset device to read array mode.

Bus Operation

Standby

SR.3 MUST be cleared, if set during a program attempt, before further

attempts are allowed by the W rite State Machine.

SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,

in cases where multiple bytes are programmed before full status is checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

Yes

Command

Program Setup

Program

Comments

Data = 40H

Data=DatatoProgram

Addr = Location to Program

Check SR.7

1 = WSM Ready

0=WSMBusy

Command Comments

Check SR.3

1=V

Low Detect

Check SR.1

1 = Attempted Program to

Locked Block - Program

Aborted

Read

Status Register Data Toggle

CE# or OE# to Update Status

Standby Check SR.4

1=V

Program Error

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 53

Figure 13. Program Suspend/Resume Flowchart

Start

Write B0H

Read Status Register

Comments

Data = B0H

Addr = X

Data = FFH

Addr = X

SR.7 =

SR.2 =

Write FFH

Read Array Data

Program Completed

Done

Reading

Yes

Write FFHWrite D0H

Program Resumed Read Array Data

Read array data from block

other than the one being

programmed.

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Check SR.7

1 = WSM Ready

0=WSMBusy

Check SR.2

1 = Program Suspended

0 = Program Completed

Data = D0H

Addr = X

Bus

Operation Command

Write 70H

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Write

Read

Standby

Write

Data=70H

Addr=X

Command

Program

Suspend

Read Status

Read Array

Program

Resume

28F800C3, 28F160C3, 28F320C3, 28F640C3

54 Datasheet

Figure 14. Automated Block Erase Flowchart

Start

Write 20H

Write D0H and

Block Address

Read Status Register

SR.7 =

Full Status

Check if Desired

Block Erase Complete

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Repeat for subsequent block erasures.

Full Status Check can be done after each block erase or after a sequence of

block erasures.

Write FFH after the last write operation to reset device to read array mode.

Bus Operation

Standby

SR. 1 and 3 MUST be cleared, if set during an erase attempt, before further

attempts are allowed by the Write State Machine.

SR.1, 3, 4, 5 are only cleared by the Clear Staus Register Command, in cases

where multiple bytes are erased before full status is checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

No Yes

Suspend Erase

Suspend

Erase Loop

Standby

Command

Erase Setup

Erase Confirm

Comments

Data = 20H

Addr = Within Block to Be

Erased

Data = D0H

Addr = Within Block to Be

Erased

Check SR.7

1=WSMReady

0 = WSM Busy

Command Comments

Check SR.3

1=V

Low Detect

Check SR.4,5

Both1=CommandSequence

Error

Read Status Register

Data (See Above)

Range Error

Command Sequence

Error

Block Erase

Successful

SR.3 =

SR.4,5 =

Block Erase ErrorSR.5 =

Attempted Erase of

Locked Block - Aborted

SR.1 =

Read

Status Register Data Toggle

CE# or OE# to Update Status

Standby Check SR.5

1=BlockErase Error

Standby

Check SR.1

1 = Attempted Erase of

Locked Block - Erase Aborted

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 55

Figure 15. Erase Suspend/Resume Flowchart

Start

Write B0H

Read Status Register

Comments

Data = B0H

Addr = X

Data = FFH

Addr = X

SR.7 =

SR.6 =

Write FFH

Read Array Data

Erase Completed

Done

Reading

Yes

Write FFHWrite D0H

Erase Resumed Read Array Data

Read array data from block

other than the one being

erased.

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Check SR.7

1 = WSM Ready

0=WSMBusy

Check SR.6

1 = Erase Suspended

0 = Erase Completed

Data = D0H

Addr = X

Bus

Operation

Write

Standby

Write

Read

Standby

Read

Command

Write 70H

Status Register Data Toggle

CE# or OE# to Update Status

Addr = X

Write

Data=70H

Addr=X

Command

Erase Suspend

Read Status

Read Array

Erase Resume

28F800C3, 28F160C3, 28F320C3, 28F640C3

56 Datasheet

Figure 16. Locking Operations Flowchart

Start

Write 60H

(Configuration Setup)

Comments

Data = 60H

Addr = X

Write 90H

(Read Configuration)

Read Block Lock Status

Locking

Change

Confirmed?

Locking Change

Complete

Bus

Operation

Write

Command

Write

01H, D0H, or 2FH

Write

Data= 01H (Lock Block)

D0H (Unlock Block)

2FH (Lockdown Block)

Addr=Within block to lock

Command

Config. Setup

Lock, Unlock,

or Lockdown

Data = 90H

Addr = X

Write

(Optional)

Read

Configuration

Block Lock Status Data

Addr = Second addr of block

Read

(Optional)

Block Lock

Status

Confirm Locking Change on

,DQ

. (See Block Locking

State Table for valid

combinations.)

Standby

(Optional)

Optional

Write FFh

(Read Array)

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 57

Figure 17. Protection Register Programming Flowchart

Start

Write C0H

(Protection Reg.

Program Setup)

Write Protect. Register

Address/Data

Read Status Register

SR.7 = 1?

Full Status

Check if Desired

Program Complete

Read Status Register

Data (See Above)

Range Error

Protection Register

Programming Error

Attempted Program to

Locked Register -

Aborted

Program Successful

SR.3, SR.4 =

SR.1, SR.4 =

FULL STATUS CHECK PROCEDURE

Bus Operation

Write

Standby

Protection Program operations can only be addressed within the protection

error.

Repeat for subsequent programming operations.

SR Full Status Check can be done after each program or after a sequence of

program operations.

Write FFH after the last program operation to reset device to read array mode.

Bus Operation

Standby

SR.3 MUST be cleared, if set during a program attempt, before further

attempts are allowed by the Write State Machine.

SR.1, SR.3 and SR.4 are only cleared by the Clear Staus Register Command,

in cases of multiple protection register program operations before full status is

checked.

If an error is detected, clear the status register before attempting retry or other

error recovery.

Yes

1, 1

0,1

1,1

Command

Protection Program

Setup

Protection Program

Comments

Data = C0H

Data=DatatoProgram

Addr = Location to Program

Check SR.7

1 = WSM Ready

0=WSMBusy

Command Comments

SR.1 SR.3 SR.4

0 11V

Low

0 01Prot.Reg.

Prog. Error

1 01Register

Locked:

Aborted

Read

Status Register Data Toggle

CE# or OE# to Update Status

Standby

28F800C3, 28F160C3, 28F320C3, 28F640C3

58 Datasheet

Appendix C Common Flash Interface Query Structure

This appendix defines the data structure or “database” returned by the Common Flash Interface

(CFI) Query command. System software should parse this structure to gain critical information

such as block size, density, x8/x16, and electrical specifications. Once this information has been

obtained, the software will know which command sets to use to enable flash writes, block erases,

and otherwise control the flash component. The Query is part of an overall specification for

multiple command set and control-interface descriptions called Common Flash Interface, or CFI.

C.1 Query Structure Output

The Query “database” allows system software to gain information for controlling the flash

component. This section describes the device’s CFI-compliant interface that allows the host system

to access Query data.

Query data are always presented on the lowest order data outputs (DQ0-7)only.Thenumerical

offset value is the address relative to the maximum bus width supported by the device. On this

family of devices, the Query table device starting address is a 10h, which is a word address for x16

devices.

For a word-wide (x16) device, the first two bytes of the Query structure, “Q” and “R” in ASCII,

appear on the low byte at word addresses 10h and 11h. This CFI-compliant device outputs 00H

data on upper bytes. Thus, the device outputs ASCII “Q” in the low byte (DQ0-7) and 00h in the

high byte (DQ8-15).

At Query addresses containing two or more bytes of information, the least significant data byte is

presented at the lower address, and the most significant data byte is presented at the higher address.

In all of the following tables, addresses and data are represented in hexadecimal notation, so the

“h” suffix has been dropped. In addition, since the upper byte of word-wide devices is always

“00h,” the leading “00” has been dropped from the table notation and only the lower byte value is

shown. Any x16 device outputs can be assumed to have 00h on the upper byte in this mode.

Table 14. Summary of Query Structure Output As a Function of Device and Mode

Device Hex

Offset Code ASCII

Value

Device Addresses

10: 51 “Q”

11: 52 “R”

12: 59 “Y”

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 59

C.2 Query Structure Overview

The Query command causes the flash component to display the Common Flash Interface (CFI)

Query structure or “database.” The structure sub-sections and address locations are summarized

below.

NOTES:

1. Refer to the Query Structure Output section and offset 28h for the detailed definition of offset address as a

function of device bus width and mode.

2. BA = The beginning location of a Block Address (e.g., 08000h is the beginning location of block 1 when the

block size is 32 Kword).

3. Offset 15 defines “P” which points to the Primary Intel-specific Extended Query Table.

Table 15. Example of Query Structure Output of x16 and x8 Devices

Word Addressing Byte Addressing

Offset Hex Code Value Offset Hex Code Value

A15–A0D15–D0A7–A0D7–D0

0010h 0051 “Q” 10h 51 “Q”

0011h 0052 “R” 11h 52 “R”

0012h 0059 “Y” 12h 59 “Y”

0013h P_IDLO PrVendor 13h P_IDLO PrVendor

0014h P_IDHI ID # 14h P_IDLO ID #

0015h PLO PrVendor 15h P_IDHI ID #

0016h PHI TblAdr 16h ... ...

0017h A_IDLO AltVendor 17h

0018h A_IDHI ID # 18h

... ... ... ...

Table 16. Query Structure(1)

Offset Sub-Section Name Description

00h Manufacturer Code

01h Device Code

(BA+2)h(2) Block Status Register Block-Specific Information

04-0Fh Reserved Reserved for Vendor-Specific Information

10h CFI Query Identification String Command Set ID and Vendor Data Offset

1Bh System Interface Information Device Timing and Voltage Information

27h Device Geometry Definition Flash Device Layout

P(3) Primary Intel-Specific Extended Query Table Vendor-Defined Additional Information

Specific to the Primary Vendor Algorithm

28F800C3, 28F160C3, 28F320C3, 28F640C3

60 Datasheet

C.3 BlockLockStatusRegister

The block-status register indicates whether an Erase operation completed successfully or whether a

given block is locked or can be accessed for flash Program/Erase operations.

Block Erase Status (BSR.1) allows system software to determine the success of the last Block

Erase operation. BSR.1 can be used just after power-up to verify that the VCC supply was not

accidentally removed during an Erase operation. This bit is reset only by issuing another Erase

operation to the block. The block-status register is accessed from word address 02h within each

block.

C.4 CFI Query Identification String

The Identification String provides verification that the component supports the Common Flash

Interface specification. It also indicates the specification version and supported vendor-specified

command set(s).

Table17. BlockStatusRegister

Offset Length Description Add. Value

(BA+2)h(1) 1 Block Lock Status Register BA+2: --00 or --01

BSR.0 Block Lock Status

0 = Unlocked

1 = Locked

BA+2: (bit 0): 0 or 1

BSR.1 Block Lock-Down Status

0 = Not locked down

1=Lockeddown

BA+2: (bit 1): 0 or 1

BSR 2–7: Reserved for future use BA+2: (bit 2–7): 0

NOTE: BA = The beginning location of a Block Address (i.e., 008000h is the beginning location of block 1 in

word mode.)

Table 18. CFI Identification

Offset Length Description Add. Hex Code Value

10h 3 Query-unique ASCII string “QRY“

11:

12:

--51

--52

--59

“Q”

“R”

“Y”

13h 2 Primary vendor command set and control interface ID code

16-bit ID code for vendor-specified algorithms

13:

14:

--03

--00

15h 2 Extended Query Table primary algorithm address 15:

16:

--35

--00

17h 2 Alternate vendor command set and control interface ID code

0000h means no second vendor-specified algorithm exists

17:

18:

--00

19h 2 Secondary algorithm Extended Query Table address

0000h means none exists

19:

1A:

--00

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 61

C.5 System Interface Information

Table 19. System Interface Information

Offset Length Description Add. Hex Code Value

1Bh 1

VCC logic supply minimum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts

1B: --27 2.7 V

1Ch 1

VCC logic supply maximum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 BCD volts

1C: --36 3.6 V

1Dh 1

VPP [programming] supply minimum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 HEX volts

1D: --B4 11.4 V

1Eh 1

VPP [programming] supply maximum program/erase voltage

bits 0–3 BCD 100 mV

bits 4–7 HEX volts

1E: --C6 12.6 V

1Fh 1 “n” such that typical single word program time-out =2nµs 1F: --05 32 µs

20h 1 “n” such that typical max. buffer write time-out = 2nµs 20: --00 NA

21h 1 “n” such that typical block erase time-out = 2nms 21: --0A 1 s

22h 1 “n” such that typical full chip erase time-out = 2nms 22: --00 NA

23h 1 “n” such that maximum word program time-out = 2ntimes typical 23: --04 512µs

24h 1 “n” such that maximum buffer write time-out = 2ntimes typical 24: --00 NA

25h 1 “n” such that maximum block erase time-out = 2ntimes typical 25: --03 8s

26h 1 “n” such that maximum chip erase time-out = 2ntimes typical 26: --00 NA

28F800C3, 28F160C3, 28F320C3, 28F640C3

62 Datasheet

C.6 Device Geometry Definition

Table 20. Device Geometry Definition

Offset Length Description Code

See table below

27h 1 “n” such that device size = 2nin number of bytes 27:

28h 2

Flash device interface:

x8 async x16 async x8/x16 async 28: --01 x16

28:00,29:00 28:01,29:00 28:02,29:00 29: --00

2Ah 2 “n” such that maximum number of bytes in write buffer = 2n2A:

2B:

--00

--00 0

2Ch 1

Number of erase block regions within device:

1. x = 0 means no erase blocking; the device erases in “bulk”

2. x specifies the number of device or partition regions

with one or more contiguous same-size erase blocks.

3. Symmetrically blocked partitions have one blocking region

4. Partition size = (total blocks) x (individual block size)

2C: --02 2

2Dh 4

Erase Block Region 1 Information

bits 0–15 = y, y+1 = number of identical-size erase blocks

bits 16–31 = z, region erase block(s) size are z x 256 bytes

2D:

2E:

2F:

30:

31h 4

Erase Block Region 2 Information

bits 0–15 = y, y+1 = number of identical-size erase blocks

bits 16–31 = z, region erase block(s) size are z x 256 bytes

31:

32:

33:

34:

Device Geometry Definition

Address 8Mbit 16Mbit 32Mbit 64Mbit

–B –T –B –T –B –T –B –T

27: --14 --14 --15 --15 --16 --16 --17 --17

28: --01 --01 --01 --01 --01 --01 --01 --01

29: --00 --00 --00 --00 --00 --00 --00 --00

2A: --00 --00 --00 --00 --00 --00 --00 --00

2B: --00 --00 --00 --00 --00 --00 --00 --00

2C: --02 --02 --02 --02 --02 --02 --02 --02

2D: --07 --0E --07 --1E --07 --3E --07 --7E

2E: --00 --00 --00 --00 --00 --00 --00 --00

2F: --20 --00 --20 --00 --20 --00 --20 --00

30: --00 --01 --00 --01 --00 --01 --00 --01

31: --0E --07 --1E --07 --3E --07 --7E --07

32: --00 --00 --00 --00 --00 --00 --00 --00

33: --00 --20 --00 --20 --00 --20 --00 --20

34: --01 --00 --01 --00 --01 --00 --01 --00

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 63

C.7 Intel-Specific Extended Query Table

Certain flash features and commands are optional. The Intel-Specific Extended Query table

specifies this and other similar types of information.

Table 21. Primary-Vendor Specific Extended Query

Offset(1)

P=35h Length Description

(Optional Flash Features and Commands) Address Hex Code Value

(P+0)h

(P+1)h

(P+2)h

3Primary extended query table

Unique ASCII string “PRI”

35:

36:

37:

--50

--52

--49

“P”

“R”

“I”

(P+3)h 1 Major version number, ASCII 38: --31 “1”

(P+4)h 1 Minor version number, ASCII 39: --30 “0”

(P+5)h

(P+6)h

(P+7)h

(P+8)h

Optional feature and command support (1=yes,

0=no)

bits 9–31 are reserved; undefined bits are “0.” If bit

31 is “1” then another 31 bit field of optional

features follows at the end of the bit-30 field.

3A:

3B:

3C:

3D:

--66

--00

bit 0 Chip erase supported

bit 1 Suspend erase supported

bit 2 Suspend program supported

bit 3 Legacy lock/unlock supported

bit 4 Queued erase supported

bit 5 Instant individual block locking supported

bit 6 Protection bits supported

bit 7 Page mode read supported

bit 8 Synchronous read supported

bit 0 = 0

bit 1 = 1

bit 2 = 1

bit 3 = 0

bit 4 = 0

bit 5 = 1

bit 6 = 1

bit 7 = 0

bit 8 = 0

Yes

(P+9)h 1

Supported functions after suspend: Read Array,

Status, Query

Other supported operations are:

bits 1–7 reserved; undefined bits are “0”

3E: --01

bit 0 Program supported after erase suspend bit 0 = 1 Yes

(P+A)h

(P+B)h 2

Block status register mask

bits 2–15 are Reserved; undefined bits are “0”

bit 0 Block Lock-Bit Status Register active

bit 1 Block Lock-Down Bit Status active

3F: --03

40: --00

bit 0 = 1 Yes

bit 1 = 1 Yes

(P+C)h 1

VCC logic supply highest performance program/

erase voltage

bits 0–3 BCD value in 100 mV

bits 4–7 BCD value in volts

41: --33 3.3 V

(P+D)h 1

VPP optimum program/erase supply voltage

bits 0–3 BCD value in 100 mV

bits 4–7 HEX value in volts

42: --C0 12.0 V

28F800C3, 28F160C3, 28F320C3, 28F640C3

64 Datasheet

Table 22. Protection Register Information

Offset(1)

P=35h Length Description

(Optional Flash Features and Commands) Address Hex

Code Value

(P+E)h 1 Number of Protection register fields in JEDEC ID space.

“00h,” indicates that 256 protection bytes are available 43: --01 01

(P+F)h

(P+10)h

(P+11)h

44:

45:

46:

--80

--00

--03

80h

00h

8byte

Protection Field 1: Protection Description

(P+12)h

This field describes user-available One Time Programmable (OTP)

Protection register bytes. Some are pre-programmed with device-

unique serial numbers. Others are user programmable. Bits 0–15

point to the Protection register Lock byte, the section’s first byte.

The following bytes are factory pre-programmed and user-

programmable.

bits 0–7 = Lock/bytes JEDEC-plane physical low address

bits 8–15 = Lock/bytes JEDEC -plane physical high address

bits 16–23 = “n” such that 2n= factory pre-programmed bytes

bits 24–31 = “n” such that 2n= user programmable bytes

47: --03 8 byte

(P+13)h Reserved for future use 48:

NOTE: The variable P is a pointer which is defined at CFI offset 15h.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 65

Appendix D Architecture Block Diagram

Output

Multiplexer

4-KWord

Parameter Block

32-KWord

Main Block

32-KWord

Main Block

4-KWord

Parameter Block

Y-Gating/Sensing Write State

Machine

Program/Erase

Voltage Switch

Data

Comparator

Status

Identifier

Data

I/O Logic

Address

Latch

Address

Counter

X-Decoder

Y-Decoder

Power

Reduction

Control

Input Buffer

Output Buffer

GND

CE#

WE#

OE#

RP#

Command

User

Interface

Input Buffer

-A

-DQ

CCQ

WP#

28F800C3, 28F160C3, 28F320C3, 28F640C3

66 Datasheet

Appendix E Word-Wide Memory Map Diagrams

8-Mbit Word-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KW) 8Mbit Size

(KW) 8Mbit

4 7F000-7FFFF 32 78000-7FFFF

4 7E000-7EFFF 32 70000-77FFF

4 7D000-7DFFF 32 68000-6FFFF

4 7C000-7CFFF 32 60000-67FFF

4 7B000-7BFFF 32 58000-5FFFF

4 7A000-7AFFF 32 50000-57FFF

4 79000-79FFF 32 48000-4FFFF

4 78000-78FFF 32 40000-47FFF

32 70000-77FFF 32 38000-3FFFF

32 68000-6FFFF 32 30000-37FFF

32 60000-67FFF 32 28000-2FFFF

32 58000-5FFFF 32 20000-27FFF

32 50000-57FFF 32 18000-1FFFF

32 48000-4FFFF 32 10000-17FFF

32 40000-47FFF 32 08000-0FFFF

32 38000-3FFFF 4 07000-07FFF

32 30000-37FFF 4 06000-06FFF

32 28000-2FFFF 4 05000-05FFF

32 20000-27FFF 4 04000-04FFF

32 18000-1FFFF 4 03000-03FFF

32 10000-17FFF 4 02000-02FFF

32 08000-0FFFF 4 01000-01FFF

32 00000-07FFF 4 00000-00FFF

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 67

16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit 64 Mbit Size

(KW) 16 Mbit 32 Mbit 64 Mbit

4 FF000-FFFFF 1FF000-1FFFFF 3FF000-3FFFFF 32 3F8000-3FFFFF

4 FE000-FEFFF 1FE000-1FEFFF 3FE000-3FEFFF 32 3F0000-3F7FFF

4 FD000-FDFFF 1FD000-1FDFFF 3FD000-3FDFFF 32 3E8000-3EFFFF

4 FC000-FCFFF 1FC000-1FCFFF 3FC000-3FCFFF 32 3E0000-3E7FFF

4 FB000-FBFFF 1FB000-1FBFFF 3FB000-3FBFFF 32 3D8000-3DFFFF

4 FA000-FAFFF 1FA000-1FAFFF 3FA000-3FAFFF 32 3D0000-3D7FFF

4 F9000-F9FFF 1F9000-1F9FFF 3F9000-3F9FFF 32 3C8000-3CFFFF

4 F8000-F8FFF 1F8000-1F8FFF 3F8000-3F8FFF 32 3C0000-3C7FFF

32 F0000-F7FFF 1F0000-1F7FFF 3F0000-3F7FFF 32 3B8000-3BFFFF

32 E8000-EFFFF 1E8000-1EFFFF 3E8000-3EFFFF 32 3B0000-3B7FFF

32 E0000-E7FFF 1E0000-1E7FFF 3E0000-3E7FFF 32 3A8000-3AFFFF

32 D8000-DFFFF 1D8000-1DFFFF 3D8000-3DFFFF 32 3A0000-3A7FFF

32 D0000-D7FFF 1D0000-1D7FFF 3D0000-3D7FFF 32 398000-39FFFF

32 C8000-CFFFF 1C8000-1CFFFF 3C8000-3CFFFF 32 390000-397FFF

32 C0000-C7FFF 1C0000-1C7FFF 3C0000-3C7FFF 32 388000-38FFFF

32 B8000-BFFFF 1B8000-1BFFFF 3B8000-3BFFFF 32 380000-387FFF

32 B0000-B7FFF 1B0000-1B7FFF 3B0000-3B7FFF 32 378000-37FFFF

32 A8000-AFFFF 1A8000-1AFFFF 3A8000-3AFFFF 32 370000-377FFF

32 A0000-A7FFF 1A0000-1A7FFF 3A0000-3A7FFF 32 368000-36FFFF

32 98000-9FFFF 198000-19FFFF 398000-39FFFF 32 360000-367FFF

32 90000-97FFF 190000-197FFF 390000-397FFF 32 358000-35FFFF

32 88000-8FFFF 188000-18FFFF 388000-38FFFF 32 350000-357FFF

32 80000-87FFF 180000-187FFF 380000-387FFF 32 348000-34FFFF

32 78000-7FFFF 178000-17FFFF 378000-37FFFF 32 340000-347FFF

32 70000-77FFF 170000-177FFF 370000-377FFF 32 338000-33FFFF

32 68000-6FFFF 168000-16FFFF 368000-36FFFF 32 330000-337FFF

32 60000-67FFF 160000-167FFF 360000-367FFF 32 328000-32FFFF

32 58000-5FFFF 158000-15FFFF 358000-35FFFF 32 320000-327FFF

32 50000-57FFF 150000-157FFF 350000-357FFF 32 318000-31FFFF

32 48000-4FFFF 148000-14FFFF 348000-34FFFF 32 310000-317FFF

32 40000-47FFF 140000-147FFF 340000-347FFF 32 308000-30FFFF

32 38000-3FFFF 138000-13FFFF 338000-33FFFF 32 300000-307FFF

32 30000-37FFF 130000-137FFF 330000-337FFF 32 2F8000-2FFFFF

32 28000-2FFFF 128000-12FFFF 328000-32FFFF 32 2F0000-2F7FFF

32 20000-27FFF 120000-127FFF 320000-327FFF 32 2E8000-2EFFFF

32 18000-1FFFF 118000-11FFFF 318000-31FFFF 32 2E0000-2E7FFF

32 10000-17FFF 110000-117FFF 310000-317FFF 32 2D8000-2DFFFF

32 08000-0FFFF 108000-10FFFF 308000-30FFFF 32 2D0000-2D7FFF

32 00000-07FFF 100000-107FFF 300000-307FFF 32 2C8000-2CFFFF

32 0F8000-0FFFFF 2F8000-2FFFFF 32 2C0000-2C7FFF

32 0F0000-0F7FFF 2F0000-2F7FFF 32 2B8000-2BFFFF

32 0E8000-0EFFFF 2E8000-2EFFFF 32 2B0000-2B7FFF

32 0E0000-0E7FFF 2E0000-2E7FFF 32 2A8000-2AFFFF

32 0D8000-0DFFFF 2D8000-2DFFFF 32 2A0000-2A7FFF

32 0D0000-0D7FFF 2D0000-2D7FFF 32 298000-29FFFF

32 0C8000-0CFFFF 2C8000-2CFFFF 32 290000-297FFF

32 0C0000-0C7FFF 2C0000-2C7FFF 32 288000-28FFFF

32 0B8000-0BFFFF 2B8000-2BFFFF 32 280000-287FFF

32 0B0000-0B7FFF 2B0000-2B7FFF 32 278000-27FFFF

32 0A8000-0AFFFF 2A8000-2AFFFF 32 270000-277FFF

This column continues on next page This column continues on next page

28F800C3, 28F160C3, 28F320C3, 28F640C3

68 Datasheet

16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit 64 Mbit Size

(KW) 16 Mbit 32 Mbit 64 Mbit

32 0A0000-0A7FFF 2A0000-2A7FFF 32 268000-26FFFF

32 098000-09FFFF 298000-29FFFF 32 260000-267FFF

32 090000-097FFF 290000-297FFF 32 258000-25FFFF

32 088000-08FFFF 288000-28FFFF 32 250000-257FFF

32 080000-087FFF 280000-287FFF 32 248000-24FFFF

32 078000-07FFFF 278000-27FFFF 32 240000-247FFF

32 070000-077FFF 270000-277FFF 32 238000-23FFFF

32 068000-06FFFF 268000-26FFFF 32 230000-237FFF

32 060000-067FFF 260000-267FFF 32 228000-22FFFF

32 058000-05FFFF 258000-25FFFF 32 220000-227FFF

32 050000-057FFF 250000-257FFF 32 218000-21FFFF

32 048000-04FFFF 248000-24FFFF 32 210000-217FFF

32 040000-047FFF 240000-247FFF 32 208000-20FFFF

32 038000-03FFFF 238000-23FFFF 32 200000-207FFF

32 030000-037FFF 230000-237FFF 32 1F8000-1FFFFF 1F8000-1FFFFF

32 028000-02FFFF 228000-22FFFF 32 1F0000-1F7FFF 1F0000-1F7FFF

32 020000-027FFF 220000-227FFF 32 1E8000-1EFFFF 1E8000-1EFFFF

32 018000-01FFFF 218000-21FFFF 32 1E0000-1E7FFF 1E0000-1E7FFF

32 010000-017FFF 210000-217FFF 32 1D8000-1DFFFF 1D8000-1DFFFF

32 008000-00FFFF 208000-21FFFF 32 1D0000-1D7FFF 1D0000-1D7FFF

32 000000-007FFF 200000-207FFF 32 1C8000-1CFFFF 1C8000-1CFFFF

32 1F8000-1FFFFF 32 1C0000-1C7FFF 1C0000-1C7FFF

32 1F0000-1F7FFF 32 1B8000-1BFFFF 1B8000-1BFFFF

32 1E8000-1EFFFF 32 1B0000-1B7FFF 1B0000-1B7FFF

32 1E0000-1E7FFF 32 1A8000-1AFFFF 1A8000-1AFFFF

32 1D8000-1DFFFF 32 1A0000-1A7FFF 1A0000-1A7FFF

32 1D0000-1D7FFF 32 198000-19FFFF 198000-19FFFF

32 1C8000-1CFFFF 32 190000-197FFF 190000-197FFF

32 1C0000-1C7FFF 32 188000-18FFFF 188000-18FFFF

32 1B8000-1BFFFF 32 180000-187FFF 180000-187FFF

32 1B0000-1B7FFF 32 178000-17FFFF 178000-17FFFF

32 1A8000-1AFFFF 32 170000-177FFF 170000-177FFF

32 1A0000-1A7FFF 32 168000-16FFFF 168000-16FFFF

32 198000-19FFFF 32 160000-167FFF 160000-167FFF

32 190000-197FFF 32 158000-15FFFF 158000-15FFFF

32 188000-18FFFF 32 150000-157FFF 150000-157FFF

32 180000-187FFF 32 148000-14FFFF 148000-14FFFF

32 178000-17FFFF 32 140000-147FFF 140000-147FFF

32 170000-177FFF 32 138000-13FFFF 138000-13FFFF

32 168000-16FFFF 32 130000-137FFF 130000-137FFF

32 160000-167FFF 32 128000-12FFFF 128000-12FFFF

32 158000-15FFFF 32 120000-127FFF 120000-127FFF

32 150000-157FFF 32 118000-11FFFF 118000-11FFFF

32 148000-14FFFF 32 110000-117FFF 110000-117FFF

32 140000-147FFF 32 108000-10FFFF 108000-10FFFF

32 138000-13FFFF 32 100000-107FFF 100000-107FFF

32 130000-137FFF 32 F8000-FFFFF F8000-FFFFF F8000-FFFFF

32 128000-12FFFF 32 F0000-F7FFF F0000-F7FFF F0000-F7FFF

32 120000-127FFF 32 E8000-EFFFF E8000-EFFFF E8000-EFFFF

32 118000-11FFFF 32 E0000-E7FFF E0000-E7FFF E0000-E7FFF

32 110000-117FFF 32 D8000-DFFFF D8000-DFFFF D8000-DFFFF

32 108000-10FFFF 32 D0000-D7FFF D0000-D7FFF D0000-D7FFF

32 100000-107FFF 32 C8000-CFFFF C8000-CFFFF C8000-CFFFF

32 0F8000-0FFFFF 32 C0000-C7FFF C0000-C7FFF C0000-C7FFF

This column continues on next page This column continues on next page

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 69

16-Mbit, 32-Mbit, and 64-Mbit Word-Wide Memory Addressing

Top Boot Bottom Boot

Size

(KW) 16 Mbit 32 Mbit 64 Mbit Size

(KW) 16 Mbit 32 Mbit 64 Mbit

32 0F0000-0F7FFF 32 B8000-BFFFF B8000-BFFFF B8000-BFFFF

32 0E8000-0EFFFF 32 B0000-B7FFF B0000-B7FFF B0000-B7FFF

32 0E0000-0E7FFF 32 A8000-AFFFF A8000-AFFFF A8000-AFFFF

32 0D8000-0DFFFF 32 A0000-A7FFF A0000-A7FFF A0000-A7FFF

32 0D0000-0D7FFF 32 98000-9FFFF 98000-9FFFF 98000-9FFFF

32 0C8000-0CFFFF 32 90000-97FFF 90000-97FFF 90000-97FFF

32 0C0000-0C7FFF 32 88000-8FFFF 88000-8FFFF 88000-8FFFF

32 0B8000-0BFFFF 32 80000-87FFF 80000-87FFF 80000-87FFF

32 0B0000-0B7FFF 32 78000-7FFFF 78000-7FFFF 78000-7FFFF

32 0A8000-0AFFFF 32 70000-77FFF 70000-77FFF 70000-77FFF

32 0A0000-0A7FFF 32 68000-6FFFF 68000-6FFFF 68000-6FFFF

32 098000-09FFFF 32 60000-67FFF 60000-67FFF 60000-67FFF

32 090000-097FFF 32 58000-5FFFF 58000-5FFFF 58000-5FFFF

32 088000-08FFFF 32 50000-57FFF 50000-57FFF 50000-57FFF

32 080000-087FFF 32 48000-4FFFF 48000-4FFFF 48000-4FFFF

32 078000-07FFFF 32 40000-47FFF 40000-47FFF 40000-47FFF

32 070000-077FFF 32 38000-3FFFF 38000-3FFFF 38000-3FFFF

32 068000-06FFFF 32 30000-37FFF 30000-37FFF 30000-37FFF

32 060000-067FFF 32 28000-2FFFF 28000-2FFFF 28000-2FFFF

32 058000-05FFFF 32 20000-27FFF 20000-27FFF 20000-27FFF

32 050000-057FFF 32 18000-1FFFF 18000-1FFFF 18000-1FFFF

32 048000-04FFFF 32 10000-17FFF 10000-17FFF 10000-17FFF

32 040000-047FFF 32 08000-0FFFF 08000-0FFFF 08000-0FFFF

32 038000-03FFFF 4 07000-07FFF 07000-07FFF 07000-07FFF

32 030000-037FFF 4 06000-06FFF 06000-06FFF 06000-06FFF

32 028000-02FFFF 4 05000-05FFF 05000-05FFF 05000-05FFF

32 020000-027FFF 4 04000-04FFF 04000-04FFF 04000-04FFF

32 018000-01FFFF 4 03000-03FFF 03000-03FFF 03000-03FFF

32 010000-017FFF 4 02000-02FFF 02000-02FFF 02000-02FFF

32 008000-00FFFF 4 01000-01FFF 01000-01FFF 01000-01FFF

32 000000-007FFF 4 00000-00FFF 00000-00FFF 00000-00FFF

Appendix F Device ID Table

Read Configuration Addresses and Data

Item Address Data

Manufacturer Code x16 00000 0089

Device Code

8-Mbit x 16-T x16 00001 88C0

8-Mbit x 16-B x16 00001 88C1

16-Mbit x 16-T x16 00001 88C2

16-Mbit x 16-B x16 00001 88C3

32-Mbit x 16-T x16 00001 88C4

32-Mbit x 16-B x16 00001 88C5

64-Mbit x 16-T x16 00001 88CC

64-Mbit x 16-B x16 00001 88CD

NOTE: Other locations within the configuration address

space are reserved by Intel for future use.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 71

Appendix G Protection Register Addressing

Word-Wide Protection Register Addressing

WordUseA7A6A5A4A3A2A1A0

LOCKBoth10000000

0Factory10000001

1Factory10000010

2Factory10000011

3Factory10000100

4User10000101

5User10000110

6User10000111

7User10001000

NOTE: All address lines not specified in the above table must be 0 when accessing the Protection Register, i.e., A21–A8=0.

28F800C3, 28F160C3, 28F320C3, 28F640C3

72 Datasheet

Appendix H VF Pitch BGA Package Drawing and

Dimensions

Figure 18. VF BGA Drawing and Dimensions

M illimet ers Inches

Symbol Min Nom M ax Notes Min Nom Max

Pac kag e Height A 1.000 0.0394

Ball He igh t A 10.15 0 0.0059

Package Body Thickness A20.665 0.0262

Ball (Lead) W idth b 0.32 5 0.375 0.425 0.0128 0.0148 0.0 167

Pac kag e Bo dy W idth ( 16Mb / 32Mb ) D 7.186 7.286 7.386 1 0.2829 0.2869 0.2908

Pac kag e Bo dy W idth (64Mb ) D 7.600 7.700 7.800 1 0.2994 0.3033 0.3073

Pac kag e Bo dy Len g th (16M b/ 32Mb) E 6.864 6.964 7.064 1 0.2702 0.2742 0.2781

Pac kag e Bo dy Len g th (64M b) E 8.900 9.000 9.100 1 0.3506 0.3546 0.3585

Pitch [e ] 0.750 0.0295

Ball (Lead) Count (16Mg) N 46 2 46

Ball (Lead) Count (32Mg) N 47 2 47

Ball (Lead) Count (64Mg) N 48 2 48

Sea ting Plan e Co plan arity Y 0.100 0.0039

Corner to Ball A1 Distance Along D ( 16Mb 32Mb ) S10.91 8 1.018 1.118 1 0.0361 0.0401 0.0440

Corner t o Ball A1 Distance Along D (64M b) S11.125 1.225 1.325 1 0.0443 0.0482 0.0522

Corner t o Ball A1 Dis tance Alon g E (16M b/32Mb) S21.507 1.607 1.707 1 0.0593 0.0633 0.0672

Corner t o Ball A1 Distance Along E (64Mb) S22.525 2.625 2.725 1 0.0994 0.1034 0.1073

ote: 1.) Package dimensions are for reference only. These dimensions are estimates based on die size, and are subject to change.

2.) For 16 M bit devi ces A20 and A2 1 are not popu lated.

Dimensions

Bottom View -Bump side up

Ba ll A1

Corner

Top View - Bump Side down

Ball A1

Corner

Side View

Seating Y

Plan

123

5678

12345678

Note: Drawing not to scale

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 73

Appendix I Easy BGA Package Drawing & Dimensions

Millimeters Inches

Symbol Min Nom Max Notes Min Nom Max

Package Height A 1.200 0.0472

Ball He ig h t A10.250 0.0098

Package Body Thickness A20.780 0.0307

Ball (Lead) Widt h b 0.330 0.430 0.530 0.0130 0.0169 0.0209

Package Body Width D 9.900 10.000 10.100 1 0.3898 0.3937 0.3976

Package Body Length E 12.900 13.000 13.100 1 0.5079 0.5118 0.5157

Pitch [e] 1.000 0.0394

Ball (Lead) Count N 64 64

Seating Plane Coplanarity Y 0.100 0.0039

Corn er t o Ball A1 Dis t an ce Along D S11.400 1.500 1.600 1 0.0551 0.0591 0.0630

Corn er t o Ball A1 Dis t an ce Along E S22.900 3.000 3.100 1 0.1142 0.1181 0.1220

Dimensions Table

Note: (1) Package dimensions are for reference only. These dimensions are estimates based

on die size, and are subject to change.

Seating

Plane

Top View - Ball side down Bottom View - Ball Side Up

Ball A1

Corner

Note: Drawing not to scal e

8765432187654321

Ball A1

Corner

Side View

28F800C3, 28F160C3, 28F320C3, 28F640C3

74 Datasheet

Appendix J Additional Information

Order Number Document/Tool

297938 3 Volt Advanced+ Boot Block Flash Memory Specification Update

292216 AP-658 Designing for Upgrade to the Advanced+ Boot Block Flash Memory

292215 AP-657 Designing with the Advanced+ Boot Block Flash Memory

Architecture

Contact your Intel

Representative Intel®Flash Data Integrator (IFDI) Software Developer’s Kit

297874 IFDI Interactive: Play with Intel®Flash Data Integrator on Your PC

NOTES:

1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International

customers should contact their local Intel or distribution sales office.

2. Visit Intel’s World Wide Web home page at ‘http://www.intel.com/design/flash’ for technical

documentation and tools.

28F800C3, 28F160C3, 28F320C3, 28F640C3

Datasheet 75

Appendix K Ordering Information

VALID COMBINATIONS (All Extended Temperature)

48-Lead TSOP 48-Ball µBGA* CSP 48-Ball VF BGA Easy BGA

Extended

64 Mbit

TE28F640C3TC80

TE28F640C3BC80

GE28F640C3TC80

GE28F640C3BC80

RC28F640C3TC80

RC28F640C3BC80

Extended

32 Mbit

TE28F320C3TC70

TE28F320C3BC70

TE28F320C3TC90

TE28F320C3BC90

TE28F320C3TA100

TE28F320C3BA100

TE28F320C3TA110

TE28F320C3BA110

GT28F320C3TA100

GT28F320C3BA100

GT28F320C3TA110

GT28F320C3BA110

GE28F320C3TD70

GE28F320C3BD70

GE28F320C3TC70

GE28F320C3BC70

GE28F320C3TC90

GE28F320C3BC90

RC28F320C3TD70

RC28F320C3BD70

RC28F320C3TC90

RC28F320C3BC90

RC28F320C3TA100

RC28F320C3BA100

RC28F320C3TA110

RC28F320C3BA110

Extended

16 Mbit

TE28F160C3TC70

TE28F160C3BC70

TE28F160C3TC80

TE28F160C3BC80

TE28F160C3TC90

TE28F160C3BC90

TE28F160C3TA90

TE28F160C3BA90

TE28F160C3TA110

TE28F160C3BA110

GT28F160C3TA90

GT28F160C3BA90

GT28F160C3TA110

GT28F160C3BA110

GE28F160C3TC70

GE28F160C3BC70

GE28F160C3TC80

GE28F160C3BC80

GE28F160C3TC90

GE28F160C3BC90

RC28F160C3TC70

RC28F160C3BC70

RC28F160C3TC80

RC28F160C3BC80

RC28F160C3TC90

RC28F160C3BC90

RC28F160C3TA90

RC28F160C3BA90

RC28F160C3TA110

RC28F160C3BA110

Extended

8Mbit

TE28F800C3TA90

TE28F800C3BA90

TE28F800C3TA110

TE28F800C3BA110

GE28F800C3TA70

GE28F800C3BA70

GE28F800C3TA90

GE28F800C3BA90

RC28F800C3TA90

RC28F800C3BA90

RC28F800C3TA110

RC28F800C3BA110

NOTE: The second line of the 48-ball µBGA package top side mark specifies assembly codes. For samples

only, the first character signifies either “E” for engineering samples or “S” for silicon daisy chain

samples. All other assembly codes without an “E” or “S” as the first character are production units.

Lithography

A = 0.25 µm

C = 0.18 µm

D = 0.13 µm

Package

TE = 48-Lead TSOP

GT = 48-Ball µBGA* CSP

GE = VF BGA CSP

RC = Easy BGA

Access Speed (ns)

(70, 80, 90, 100, 110)

Product Family

C3 = 3 Volt Advanced+ Boot Block

VCC =2.7V–3.6V

VPP =2.7V–3.6Vor

11.4 V–12.6 V

Device Density

640 = x16 (64 Mbit)

320 = x16 (32 Mbit)

160 = x16 (16 Mbit)

800=x16(8Mbit)

T=Top Blocking

B=Bottom Blocking

T E 2 8 F 3 2 0 C 3 T C 7 0

Product line designator

for all Intel®Flash products