CFY67
Semi conductor Group 1 of 10 Draft D, S eptember 99
HiRel K-Band GaAs Super Low Noise HEM T
HiRel Di scret e and M icrow ave Semiconductor
Pseudo-morphic AlG aAs/InGaAs/G a As HEMT
For professional super low-noise amplifiers
For fr equencies fr om 500 MHz to > 20 GHz
Hermetically sealed microwave package
Super low noise figur e, high associated gain
Space Qualif ied
ESA/SCC Detail Spec. No.: 5613/004,
Type Variant No.s 01 t o 04, 05 foreseen ( tbc.)
12
34
ESD: Electrostatic discharge sensitive device, observe handling precaut ions!
Type Marking Ordering Code Pin Configurat i on Package
1234
CFY67-06 (q l)
CFY67-08 (q l)
CFY67-08P (q l)
CFY67-10 (q l)
CFY67-10P (q l)
- see below G S D S Micro-X
CFY67-nnl: specifies gain and output power levels (see electr ical char act eristics)
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702F1699
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702F1699
(see order inst r uctions for or dering example)
CFY67
Semi conductor Group 2 of 10 Draft D, S eptember 99
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage VDS 3.5 V
Drain-g a t e voltage VDG 4.5 V
Gate-sour ce voltage (reverse / forward) VGS - 3... + 0.5 V
Drain current ID60 mA
Gate forward current IG2mA
RF Input Power, C- and X-Band 1) PRF,in + 10 dBm
Junction temperat ur e TJ150 °C
Storag e t em perature rang e Tstg - 65... + 150 °C
Total power dissipation 2) Ptot 200 mW
Soldering t em perature 3) Tsol 230 °C
Thermal Resistance
Junction-soldering point Rth JS 515 (tbc.) K/W
Notes.:
1) For VDS 2 V. For VDS > 2 V, derating is r equired.
2) At T S = + 47 °C. For TS > + 47 °C derating is required.
3) During 15 sec. maximum. The same t er minal shall not be resoldered until 3 minutes have
elapsed.
CFY67
Semi conductor Group 3 of 10 Draft D, S eptember 99
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter Symbol Values Unit
min. typ. max.
DC Characteristi cs
Drain-source sat ur at ion cur r ent
VDS = 2 V, VGS = 0 V IDss 15 30 60 mA
Gate threshold voltage
VDS = 2 V, ID = 1 mA -VGth 0.2 0.7 2.0 V
Drain current at pinch-off
VDS = 1.5 V, VGS = - 3 V IDp -< 50-µA
Gate leak age current at pinch- off
VDS = 1.5 V, VGS = - 3 V -IGp - < 50 200 µA
Transconductance
VDS = 2 V, ID = 15 mA gm15 50 65 - mS
Gate leak age current at operation
VDS = 2 V, ID = 15 mA -IG15 -< 0.52µA
Thermal resistance
junction to solder ing point Rth JS - 450 - K/W
CFY67
Semi conductor Group 4 of 10 Draft D, S eptember 99
Electrical Characteristics (continued)
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Noise fig u r e 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz NF dB
CFY67-06 - 0.5 0.6
CFY67-08, -08P - 0.7 0.8
CFY67-10, 10P - 0.9 1.0
Associated gain. 1)
VDS = 2 V, ID = 15 mA, f = 12 GHz GadB
CFY67-06 11.5 12.5 -
CFY67-08, -08P 11.0 11. 5 -
CFY67-10, 10P 10.5 11. 0 -
Output power at 1 dB gain compression 2)
VDS = 2 V, ID = 20 mA, f = 12 GHz P1dB dBm
CFY67-06, -08, -10 - 11.0 -
CFY67-08P, -10P 10.0 11. 0 -
Notes.:
1) Noise figure / sssociated g ain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no f ine- t uning).
2) Output power charact er ist ics given for optim um output power matching conditions (fixed
generic m at c hing, no f ine-tuning).
CFY67
Semi conductor Group 5 of 10 Draft D, S eptember 99
Typical Common Source S-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50
f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12 MAG
[GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB] [dB]
0,5 0,963 -15 5,315 165 0,0111 74 0,655 -14 0,40 26,8
1,0 0,938 -23 5,182 159 0,0225 68 0,639 -18 0,39 23,6
1,5 0,913 -33 5,060 150 0,0317 62 0,625 -23 0,42 22,0
2,0 0,889 -42 4,940 142 0,0411 57 0,611 -28 0,43 20,8
2,5 0,865 -52 4,824 133 0,0509 53 0,596 -35 0,43 19,8
3,0 0,844 -62 4,715 124 0,0585 46 0,582 -41 0,45 19,1
3,5 0,823 -72 4,591 115 0,0650 41 0,567 -47 0,47 18,5
4,0 0,800 -81 4,450 107 0,0714 36 0,552 -53 0,50 17,9
4,5 0,779 -91 4,319 99 0,0768 31 0,534 -60 0,52 17,5
5,0 0,761 -100 4,183 91 0,0811 25 0,520 -66 0,54 17,1
5,5 0,743 -109 4,043 83 0,0850 20 0,500 -72 0,58 16,8
6,0 0,725 -117 3,906 75 0,0885 15 0,490 -77 0,60 16,4
6,5 0,708 -125 3,769 68 0,0917 11 0,477 -83 0,63 16,1
7,0 0,690 -132 3,640 61 0,0942 7 0,467 -88 0,67 15,9
7,5 0,673 -139 3,529 54 0,0962 3 0,455 -93 0,71 15,6
8,0 0,656 -146 3,427 48 0,0978 -1 0,442 -97 0,76 15,4
8,5 0,640 -153 3,344 41 0,0998 -5 0,430 -101 0,79 15,3
9,0 0,625 -160 3,271 34 0,1010 -9 0,417 -104 0,84 15,1
9,5 0,611 -168 3,202 28 0,1027 -12 0,406 -108 0,87 14,9
10,0 0,597 -175 3,143 21 0,1033 -16 0,393 -113 0,91 14,8
10,5 0,586 177 3,089 15 0,1044 -20 0,381 -118 0,94 14,7
11,0 0,576 169 3,041 8 0,1056 -24 0,370 -123 0,96 14,6
11,5 0,564 161 3,002 1 0,1068 -28 0,358 -129 0,98 14,5
12,0 0,554 154 2,960 -5 0,1070 -32 0,351 -134 1,01 14,4 13,8
12,5 0,547 146 2,923 -12 0,1076 -36 0,343 -140 1,03 14,3 13,3
13,0 0,536 139 2,886 -19 0,1076 -41 0,336 -146 1,06 14,3 12,7
13,5 0,529 131 2,848 -26 0,1081 -45 0,330 -151 1,09 14,2 12,4
14,0 0,522 124 2,815 -33 0,1087 -50 0,325 -156 1,11 14,1 12,1
14,5 0,517 116 2,787 -40 0,1087 -55 0,320 -161 1,13 14,1 11,9
15,0 0,510 108 2,765 -46 0,1093 -60 0,315 -167 1,14 14,0 11,7
15,5 0,505 99 2,751 -54 0,1090 -65 0,311 -172 1,16 14,0 11,6
16,0 0,502 91 2,735 -61 0,1090 -71 0,305 -177 1,18 14,0 11,4
16,5 0,499 82 2,719 -68 0,1091 -77 0,301 177 1,19 14,0 11,3
17,0 0,498 74 2,722 -75 0,1097 -82 0,297 172 1,19 13,9 11,3
17,5 0,498 68 2,741 -80 0,1103 -87 0,294 168 1,18 14,0 11,4
18,0 0,498 62 2,760 -84 0,1107 -90 0,290 165 1,17 14,0 11,5
CFY67
Semi conductor Group 6 of 10 Draft D, S eptember 99
Typical Common Source S-Parameters (continued)
CFY67-06: VDS = 2 V, ID = 15 mA, Zo = 50
f |S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12 MAG
[GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [dB] [dB]
0,5 0,962 -13 6,112 166 0,0111 76 0,539 -15 0,42 27,4
1,0 0,937 -22 5,956 159 0,0211 69 0,525 -19 0,42 24,5
1,5 0,913 -33 5,810 150 0,0302 64 0,511 -24 0,44 22,8
2,0 0,889 -41 5,690 142 0,0394 58 0,498 -30 0,46 21,6
2,5 0,860 -51 5,522 133 0,0484 53 0,484 -36 0,48 20,6
3,0 0,834 -61 5,386 124 0,0567 48 0,469 -43 0,50 19,8
3,5 0,810 -71 5,236 116 0,0637 43 0,456 -49 0,52 19,1
4,0 0,784 -80 5,067 107 0,0702 38 0,440 -55 0,55 18,6
4,5 0,761 -90 4,911 99 0,0760 33 0,423 -61 0,58 18,1
5,0 0,740 -99 4,752 91 0,0809 28 0,410 -67 0,60 17,7
5,5 0,720 -107 4,586 84 0,0851 24 0,397 -73 0,63 17,3
6,0 0,701 -116 4,420 76 0,0889 19 0,385 -79 0,66 17,0
6,5 0,682 -124 4,260 69 0,0918 15 0,373 -84 0,69 16,7
7,0 0,663 -131 4,107 62 0,0941 11 0,362 -89 0,73 16,4
7,5 0,644 -139 3,974 55 0,0962 7 0,351 -93 0,77 16,2
8,0 0,627 -148 3,852 49 0,0980 3 0,343 -98 0,80 15,9
8,5 0,611 -157 3,747 42 0,0995 -1 0,333 -102 0,83 15,8
9,0 0,595 -165 3,659 35 0,1008 -5 0,323 -107 0,86 15,6
9,5 0,581 -173 3,571 29 0,1022 -9 0,313 -112 0,90 15,4
10,0 0,567 178 3,497 22 0,1039 -13 0,303 -116 0,92 15,3
10,5 0,556 170 3,430 16 0,1049 -17 0,293 -121 0,95 15,1
11,0 0,546 163 3,368 9 0,1064 -21 0,284 -127 0,98 15,0
11,5 0,537 155 3,317 3 0,1078 -26 0,274 -131 1,00 14,9
12,0 0,528 149 3,265 -4 0,1093 -30 0,265 -135 1,02 14,8 13,8
12,5 0,520 142 3,216 -10 0,1105 -35 0,255 -139 1,05 14,6 13,3
13,0 0,513 135 3,169 -17 0,1116 -39 0,246 -143 1,07 14,5 12,9
13,5 0,506 128 3,120 -24 0,1126 -44 0,235 -146 1,10 14,4 12,5
14,0 0,498 121 3,080 -30 0,1137 -49 0,225 -150 1,12 14,3 12,2
14,5 0,492 113 3,044 -37 0,1151 -54 0,215 -155 1,14 14,2 12,0
15,0 0,489 106 3,014 -44 0,1160 -59 0,207 -159 1,15 14,1 11,8
15,5 0,484 98 2,990 -51 0,1171 -65 0,200 -163 1,16 14,1 11,6
16,0 0,485 91 2,967 -58 0,1185 -71 0,193 -167 1,17 14,0 11,5
16,5 0,485 83 2,945 -65 0,1197 -77 0,187 -171 1,17 13,9 11,4
17,0 0,485 75 2,947 -71 0,1206 -82 0,182 -175 1,17 13,9 11,4
17,5 0,487 69 2,961 -77 0,1215 -87 0,177 -178 1,16 13,9 11,5
18,0 0,490 64 2,979 -81 0,1230 -90 0,174 179 1,14 13,8 11,6
CFY67
Semi conductor Group 7 of 10 Draft D, S eptember 99
Typical Common Source Noise-Parameters
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50
fNF
min |Γopt|<Γopt Rn
[GHz] [dB] [magn] [angle] []
1 0,29 0,756 14 15,60
2 0,30 0,690 28 14,65
3 0,34 0,643 43 13,56
4 0,38 0,606 58 12,10
5 0,41 0,578 73 10,53
6 0,46 0,553 87 8,86
7 0,50 0,534 102 7,16
8 0,55 0,518 116 5,62
9 0,60 0,505 131 4,29
10 0,64 0,495 145 3,23
11 0,69 0,486 159 2,53
12 0,73 0,476 173 2,22
13 0,78 0,467 -173 2,37
14 0,84 0,455 -160 2,96
15 0,88 0,443 -146 4,01
16 0,93 0,428 -132 5,47
17 0,99 0,412 -118 7,26
18 1,05 0,394 -103 9,61
CFY67
Semi conductor Group 8 of 10 Draft D, S eptember 99
Order Instructions:
Full type variant including quality level must be specified by the orderer. For HiRel Discrete
and Microwave Semiconductors the ordering code specifies device family and quality level
only.
Ordering Form: Ordering Code: Q..........
CFY67 -(nnl) (ql)
-(nnl) Noise Figure/ G ain and/or Power Level
(ql) : Qualit y Level
Ordering Example: Order ing Code: Q62702F1698
CFY67-08P ES
For CFY67, Noise Fig ure/Gain/Power Level 08P:
NF < 0.8 dB, Ga > 11.0 dB, P1dB > 10 dBm @ 12 G Hz
in ESA Space Quality Level
Further Informations :
See our WWW-Pages:
- Discrete and RF- Sem iconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/hirel.htm
- HiRel Discrete and Microwave Semiconductor s
www.infineon.com/products/discrete/hirel.htm
Please contact also our m ar keting division :
Tel.: ++89 234 24480
Fax.: ++89 234 28438
e-mail: martin.wimmers@infineon.com
Address: Infineon T echnologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
CFY67
Semi conductor Group 9 of 10 Draft D, S eptember 99
Mi cro-X Package Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
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