SDWx1F1C – Chip on Board
Product Data Sheet
Product Brief
Description
Key Applications
Features and Benefits
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1
Enable High Flux and Cost Efficient System
SDWx1F1C (SDW01F1C, SDW81F1C, SDW91F1C)
Z Power Chip on board – ZC series
•Size 13.5mm * 13.5mm
•Power dissipation 6.3 ~ 18.4W
•Wide CCT range with CRI70~90
•Forward VF 34.8V
•Maximum Current 460mA
•MacAdam 3-step binning
•Uniformed Shadow
•Excellent Thermal management
•RoHS compliant
Table 1. Product Selection Table
MacAdam
3-Step
RoHS
Part Number
CCT [K]
Color
Min.
Typ.
Max.
SDW01F1C
Cool White
4,700
-
6,000
Neutral White
3,700
-
4,700
SDW81F1C
Cool White
4,700
-
6,000
Neutral White
3,700
-
4,700
Warm White
2,600
-
3,700
SDW91F1C
Neutral White
3,700
-
4,200
Warm White
2,600
-
3,700
•The ZC series are LED arrays which
provide High Flux and High Efficacy.
•It is especially designed for easy
assembly of lighting fixtures by
eliminating reflow soldering process.
• It‘s thermal management is better than
other power LED solutions with wide
Metal area.
•ZC series are ideal light sources for
General Lighting applications including
Replacement Lamps, Industrial &
Commercial Lightings and other high
Lumen required applications.
•Commercial – Downlight
•Replacement lamps – Bulb, PAR, MR16
•Industrial
•Residential
LM-80
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Product Data Sheet
SDWx1F1C – Chip on Board
2
Table of Contents
Index
•
Product Brief
1
•
Product Performance & Characterization Guide
3
•
Characteristics Graph
6
•
Product Nomenclature (Labeling Information)
14
•
Color Bin Structure
15
•
Mechanical Dimensions
20
•
Packaging Specification
21
•
Handling of Silicone Resin for LEDs
23
•
Precaution For Use
24
•
Company Information
27
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Product Data Sheet
SDWx1F1C – Chip on Board
3
Product Performance & Characterization Guide
Notes :
CCT (K) [1]
Typical Luminous Flux [2],
ФV [3] (lm)
Typical Forward Voltage,
VF [4] (V)
CRI [5],
Ra
Viewing
Angle
(degrees)
2Θ ½
Typ.
180mA
460mA*
180mA
460mA*
Min.
Typ.
5600
870
1,931
34.8
38.1
70
120
5000
885
1,960
34.8
38.1
70
120
4500
915
2,013
34.8
38.1
70
120
4000
913
2,008
34.8
38.1
70
120
5600
815
1810
34.8
38.1
80
120
5000
820
1820
34.8
38.1
80
120
4500
790
1760
34.8
38.1
80
120
4000
775
1661
34.8
38.1
80
120
3500
757
1622
34.8
38.1
80
120
3000
750
1608
34.8
38.1
80
120
2700
720
1541
34.8
38.1
80
120
4000
680
1470
34.8
38.1
90
120
3500
645
1393
34.8
38.1
90
120
3000
635
1371
34.8
38.1
90
120
2700
600
1294
34.8
38.1
90
120
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color
coordinate : 0.01, CCT 5% tolerance.
(2) Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements.
(3) ФV is the total luminous flux output as measured with an integrating sphere.
(4) Tolerance is ±3% on forward voltage measurements.
(5) Tolerance is ±2 on CRI measurements.
* No values are provided by real measurement. Only for reference purpose.
Table 2. Electro Optical Characteristics, Tj=25ºC
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Product Data Sheet
SDWx1F1C – Chip on Board
4
Product Performance & Characterization Guide
Notes :
Part Number
CCT (K) [1]
Typical Luminous Flux [2],
ФV [3] (lm)
Typical Forward Voltage,
VF [4] (V)
Typ.
180mA *
180mA *
SDW01F1C
5600
783
33.3
5000
797
33.3
4500
824
33.3
4000
822
33.3
SDW81F1C
5600
725
33.3
5000
730
33.3
4500
703
33.3
4000
690
33.3
3500
674
33.3
3000
668
33.3
2700
641
33.3
SDW91F1C
4000
592
33.3
3500
561
33.3
3000
552
33.3
2700
522
33.3
(1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color
coordinate : 0.01, CCT 5% tolerance.
(2) Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements.
(3) ФV is the total luminous flux output as measured with an integrating sphere.
(4) Tolerance is ±3% on forward voltage measurements.
(5) Tolerance is ±2 on CRI measurements.
* No values are provided by real measurement. Only for reference purpose.
Table 3. Electro Optical Characteristics, Tj=85ºC
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Product Data Sheet
SDWx1F1C – Chip on Board
5
Product Performance & Characterization Guide
Parameter
Symbol
Value
Unit
Min.
Typ.
Max.
Forward Current
IF
-
0.18
0.46
A
Power Dissipation
Pd
-
6.3
18.4
W
Junction Temperature
Tj
-
-
140
ºC
Operating Temperature
Topr
-40
-
85
ºC
Surface Temperature
TS
-
-
100
ºC
Storage Temperature
Tstg
-40
-
100
ºC
Thermal resistance (J to S) [1]
RθJ-S
-
1.68
-
K/W
ESD Sensitivity(HBM)
-
Class 3A JESD22-A114-E
Table 4. Absolute Maximum Characteristics, Tj=25ºC
Notes :
(1) Thermal Resistance : RθJ-S (Junction to Ts point)
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Product Data Sheet
SDWx1F1C – Chip on Board
6
Characteristics Graph
Product Data Sheet
400 450 500 550 600 650 700 750 800
0
20
40
60
80
100
120
Relative Intensity(%)
Wavelength (nm)
CRI70(5000K)
CRI70(4000K)
400 450 500 550 600 650 700 750 800
0
20
40
60
80
100
120
Relative Intensity(%)
Wavelength (nm)
CRI80(5000K)
CRI80(4000K)
CRI80(3000K)
Fig 1. Color Spectrum, Tj=25℃, IF=180mA (CRI70)
Fig 2. Color Spectrum, Tj=25℃, IF=180mA (CRI80)
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Product Data Sheet
SDWx1F1C – Chip on Board
7
Characteristics Graph
Product Data Sheet
400 450 500 550 600 650 700 750 800
0
20
40
60
80
100
120
Relative Intensity(%)
Wavelength (nm)
CRI90(4000K)
CRI90(2700K)
Fig 3. Color Spectrum, Tj=25℃, IF=180mA (CRI90)
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Product Data Sheet
SDWx1F1C – Chip on Board
8
Characteristics Graph
Product Data Sheet
-100 -75 -50 -25 0 25 50 75 100
0
25
50
75
100
Relative Intensity (%)
Angle (Degrees)
Fig 4. Radiant pattern, Tj=25℃, IF=180mA
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Product Data Sheet
SDWx1F1C – Chip on Board
9
Characteristics Graph
Product Data Sheet
Fig 5. Forward Voltage vs. Forward Current, Tj=25℃
Fig 6. Forward Current vs. Relative Luminous Flux, Tj=25℃
25 30 35 40
0.0
0.1
0.2
0.3
0.4
0.5
Foward Current (A)
Foward Voltage (V)
0.0 0.1 0.2 0.3 0.4 0.5
0
50
100
150
200
250
Relative Luminous Flux (%)
Foward Current (A)
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Product Data Sheet
SDWx1F1C – Chip on Board
10
Product Data Sheet
Characteristics Graph
25 50 75 100 125 150
0
20
40
60
80
100
120
Relative luminous flux (%)
Junction Temperature (oC)
25 50 75 100 125 150
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
Foward Voltage (V)
Junction Temperature(oC)
Fig 7. Junction Temperature vs. Relative Light Output, IF=180mA
Fig 8. Junction Temperature vs. Forward Voltage, IF=180mA
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Product Data Sheet
SDWx1F1C – Chip on Board
11
Product Data Sheet
Characteristics Graph
Fig 10. Junction Temperature vs. CIE X, Y Shift, IF=180mA (CRI90)
Fig 9. Junction Temperature vs. CIE X, Y Shift, IF=180mA (CRI70)
20 40 60 80 100 120 140
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
Relative Variation
Jinction Temperature(oC)
CIE X(5000K)
CIE Y(5000K)
20 40 60 80 100 120 140
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
CIE X(3000K)
CIE Y(3000K)
Relative Variation
Junction Temperature(oC)
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Product Data Sheet
SDWx1F1C – Chip on Board
12
Product Data Sheet
Characteristics Graph
Fig 11. Junction Temperature vs. CIE X, Y Shift, IF=180mA (CRI80)
20 40 60 80 100 120 140
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
CIE X(3000K)
CIE Y(3000K)
Relative Variation
Junction Temperature (oC)
20 40 60 80 100 120 140
-0.03
-0.02
-0.01
0.00
0.01
0.02
0.03
CIE X(5000K)
CIE Y(5000K)
Relative Variation
Junction Temperature (oC)
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Product Data Sheet
SDWx1F1C – Chip on Board
13
Characteristics Graph
Product Data Sheet
Fig 12. Surface Temperature vs. Maximum Forward Current, Tj(max.)=140℃
20 40 60 80 100 120
0.0
0.2
0.4
0.6
Maximum Current (A)
Surface Temperature (oC)
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Product Data Sheet
SDWx1F1C – Chip on Board
14
Product Nomenclature
Lot Number Code Description
Y1Y2 Year
Y3Y4 Month
Y5Y6 Day
Y7Y8Y9Y10 Mass order
Y11Y12Y13 Tray No.
Table 5. Part Numbering System : X1X2X3 X4X5 X6X7 X8
Table 6. Lot Numbering System : Y1Y2Y3Y4Y5Y6 – Y7Y8Y9Y10 – Y11Y12Y13
Part Number Code Description Part Number Value
X1 Company S
X2 Package series D
X3X4 Color Specification W0 CRI 70
W8 CRI 80
W9 CRI 90
X5 Series number 1
X6 Lens type F Flat
X7 PCB type 1 PCB
X8 Revision number C New COB type
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Product Data Sheet
SDWx1F1C – Chip on Board
15
Color Bin Structure
CIE Chromaticity Diagram
0.33 0.36 0.39 0.42 0.45 0.48
0.33
0.36
0.39
0.42
Y
X
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Product Data Sheet
SDWx1F1C – Chip on Board
16
Color Bin Structure
0.32 0.34 0.36
0.32
0.34
0.36
0.38 4700K
5000K
5300K
5600K
B4
B0
Y
X
B2 B5
B1
B3 C4
C0
C2 C5
C1
C3
6000K
CIE Chromaticity Diagram, Tj=25℃, IF=180mA
B0
B1
B2
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3207
0.3462
0.3292
0.3539
0.3212
0.3389
0.3212
0.3389
0.3293
0.3461
0.3217
0.3316
0.3293
0.3461
0.3373
0.3534
0.3293
0.3384
0.3292
0.3539
0.3376
0.3616
0.3293
0.3461
B3
B4
B5
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3293
0.3461
0.3217
0.3316
0.3293
0.3384
0.3293
0.3384
0.3222
0.3243
0.3294
0.3306
0.3369
0.3451
0.3294
0.3306
0.3366
0.3369
0.3373
0.3534
0.3293
0.3384
0.3369
0.3451
C0
C1
C2
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3376
0.3616
0.3463
0.3687
0.3373
0.3534
0.3373
0.3534
0.3456
0.3601
0.3369
0.3451
0.3456
0.3601
0.3539
0.3669
0.3448
0.3514
0.3463
0.3687
0.3552
0.3760
0.3456
0.3601
C3
C4
C5
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3456
0.3601
0.3369
0.3451
0.3448
0.3514
0.3448
0.3514
0.3366
0.3369
0.3440
0.3428
0.3526
0.3578
0.3440
0.3428
0.3514
0.3487
0.3539
0.3669
0.3448
0.3514
0.3526
0.3578
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Product Data Sheet
SDWx1F1C – Chip on Board
17
Color Bin Structure
0.34 0.36 0.38 0.40
0.34
0.36
0.38
0.40
ANSI
MacAdam 3-STEP
MacAdam 4-STEP
3700K
4000K
4200K
4500K
D11
D10
D23
D24
D22
Y
X
D21
E11
E10
E23
E24
E22
E21
4700K
CIE Chromaticity Diagram, Tj=25℃, IF=180mA
ANSI
D21
D22
D23
D24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3528
0.3599
0.3628
0.3732
0.3601
0.3587
0.3511
0.3466
0.3548
0.3736
0.3641
0.3805
0.3645
0.3618
0.3528
0.3599
0.3641
0.3805
0.3736
0.3874
0.3663
0.3699
0.3570
0.3631
0.3628
0.3732
0.3703
0.3728
0.3703
0.3728
0.3560
0.3558
0.3580
0.3697
0.3663
0.3699
0.3670
0.3578
0.3601
0.3587
0.3570
0.3631
0.3681
0.3771
0.3590
0.3521
0.3590
0.3521
E21
E22
E23
E24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3703
0.3726
0.3890
0.3842
0.3670
0.3578
0.3784
0.3647
0.3736
0.3874
0.3914
0.3922
0.3703
0.3726
0.3806
0.3725
0.3871
0.3959
0.3849
0.3881
0.3765
0.3765
0.3865
0.3762
0.3849
0.3881
0.3871
0.3959
0.3746
0.3689
0.3890
0.3842
0.3784
0.3841
0.4006
0.4044
0.3806
0.3725
0.3952
0.3880
0.3765
0.3765
0.3952
0.3880
0.3784
0.3647
0.3898
0.3716
3-STEP
4-STEP
D10
E10
D11
E11
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3589
0.3685
0.3764
0.3713
0.3560
0.3557
0.3746
0.3689
0.3665
0.3742
0.3793
0.3828
0.3580
0.3697
0.3784
0.3841
0.3637
0.3622
0.3890
0.3887
0.3681
0.3771
0.3914
0.3922
0.3573
0.3579
0.3854
0.3768
0.3645
0.3618
0.3865
0.3762
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Product Data Sheet
SDWx1F1C – Chip on Board
18
Color Bin Structure
0.38 0.40 0.42 0.44 0.46 0.48
0.36
0.38
0.40
0.42
0.44
F11
G11
H11
H21 H22
H23 H24
G24
G23
G22
G21
F22
F21
F24
F10
2600K
2700K
2900K
3000K
2100K
3500K
3700K
H10
G10
ANSI
MacAdam 3-STEP
MacAdam 4-STEP
Y
X
F23
CIE Chromaticity Diagram, Tj=25℃, IF=180mA
ANSI
F21
F22
F23
F24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4148
0.4090
0.4013
0.3887
0.4223
0.3990
0.4299
0.4165
0.3996
0.4015
0.3943
0.3853
0.4153
0.3955
0.4148
0.4090
0.3943
0.3853
0.3889
0.3690
0.4116
0.3865
0.4113
0.4002
0.4013
0.3887
0.4018
0.3752
0.4049
0.3833
0.4186
0.4037
0.4040
0.3966
0.4049
0.3833
0.4018
0.3752
0.4153
0.3955
0.4113
0.4002
0.3981
0.3800
0.4147
0.3814
0.4223
0.3990
G21
G22
G23
G24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4223
0.3990
0.4406
0.4055
0.4147
0.3814
0.4259
0.3853
0.4299
0.4165
0.4451
0.4145
0.4223
0.3990
0.4302
0.3943
0.4430
0.4212
0.4387
0.4122
0.4284
0.4011
0.4361
0.3964
0.4387
0.4122
0.4430
0.4212
0.4243
0.3922
0.4406
0.4055
0.4324
0.4100
0.4562
0.4260
0.4302
0.3943
0.4468
0.4077
0.4284
0.4011
0.4468
0.4077
0.4259
0.3853
0.4373
0.3893
H21
H22
H23
H24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4468
0.4077
0.4644
0.4118
0.4373
0.3893
0.4483
0.3919
0.4562
0.4260
0.4697
0.4211
0.4468
0.4077
0.4534
0.4012
0.4687
0.4289
0.4636
0.4197
0.4526
0.4090
0.4591
0.4025
0.4636
0.4197
0.4687
0.4289
0.4477
0.3998
0.4644
0.4118
0.4575
0.4182
0.4810
0.4319
0.4534
0.4012
0.4703
0.4132
0.4526
0.4090
0.4703
0.4132
0.4483
0.3919
0.4593
0.3944
3-STEP
4-STEP
F10
G10
H10
F11
G11
H11
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4006
0.3829
0.4267
0.3946
0.4502
0.4020
0.3981
0.3800
0.4243
0.3922
0.4477
0.3998
0.4051
0.3954
0.4328
0.4079
0.4576
0.4158
0.4040
0.3966
0.4324
0.4100
0.4575
0.4182
0.4159
0.4007
0.4422
0.4113
0.4667
0.4180
0.4186
0.4037
0.4451
0.4145
0.4697
0.4211
0.4108
0.3878
0.4355
0.3977
0.4588
0.4041
0.4116
0.3865
0.4361
0.3964
0.4591
0.4025
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Product Data Sheet
SDWx1F1C – Chip on Board
19
Color Bin Structure
Table 7. Bin Code description
Table 8. Ordering Information(Bin Code) Available ranks
Part Number
Luminous Flux (lm)
@ IF = 180mA
Color
Chromaticity
Coordinate
@ IF = 180mA
Typical Forward Voltage (Vf)
@ IF = 180mA
Bin Code Min. Max. Bin Code Min. Max.
SDW01F1C
C
700
800
Refer to
page.15~17
D
32.0 34.0
D
800
900
E
34.0 38.0
E
900
1100
F
38.0 40.0
SDW81F1C
B2
635
700
Refer to
page.15~18
D
32.0 34.0
C
700
800
E
34.0 38.0
D
800
900
F
38.0 40.0
SDW91F1C
B1
570
635
Refer to
page.15~18
D
32
34
B2
635
700
E
34
38
C
700
800
F
38
40
Part
Number CCT CIE LF rank VF rank
SDW01F1C
5300~6000K B C D E D E F
4700~5300K C C D E D E F
4200~4700K D C D E D E F
3700~4200K E C D E D E F
SDW81F1C
5300~6000K B B2 C D D E F
4700~5300K C B2 C D D E F
4200~4700K D B2 C D D E F
3700~4200K E B2 C D D E F
3200~3700K F B2 C D D E F
2900~3700K G B2 C D D E F
2600~2900K H B2 C D D E F
SDW91F1C
3700~4200K E B1 B2 C D E F
3200~3700K F B1 B2 C D E F
2900~3200K G B1 B2 C D E F
2600~2900K H B1 B2 C D E F
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Product Data Sheet
SDWx1F1C – Chip on Board
20
Mechanical Dimensions
Notes :
(1) All dimensions are in millimeters.
(2) Scale : none
(3) Undefined tolerance is ±0.2mm
S1 Ts
X 12 X 12
Cathode
Anode
Circuit
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Product Data Sheet
SDWx1F1C – Chip on Board
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Packaging Specification
Notes :
(1) Quantity : 30pcs/Tray
(2) All dimensions are in millimeters (tolerance : ±0.3)
(3) Scale none
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Product Data Sheet
SDWx1F1C – Chip on Board
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Packaging Specification
Notes :
(1) Heat Sealed after packing (Use Zipper Bag)
(2) Quantity : 3Tray(90pcs) /Bag
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Product Data Sheet
SDWx1F1C – Chip on Board
23
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(3) Silicone differs from materials conventionally used for the manufacturing of LEDs.
These conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As
mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of wire.
(4) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are
used, it must be
assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not
recommended. Ultrasonic cleaning may cause damage to the LED.
(5) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this
product with acid or sulfur material in sealed space.
(6) Avoid leaving fingerprints on silicone resin parts.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
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Product Data Sheet
SDWx1F1C – Chip on Board
24
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend storing Power LEDs in a dry box with a
desiccant.
The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of 50%.
(2) Use Precaution after Opening the Packaging. Pay attention to the following:
a. Recommend conditions after opening the package
- Sealing
- Temperature : 5 ~ 40℃ Humidity : less than RH30%
b. If the package has been opened more than 4 week or the color of the desiccant changes.
(3) For manual soldering
Seoul Semiconductor recommends the soldering condition
(ZC series product is not adaptable to reflow process)
a. Use lead-free soldering
b. Soldering should be implemented using a soldering equipment at temperature lower than 350°C.
c. Before proceeding the next step, product temperature must be stabilized at room temperature.
(4) Components should not be mounted on warped (non coplanar) portion of PCB.
(5) Radioactive exposure is not considered for the products listed here in.
(6) It is dangerous to drink the liquid or inhale the gas generated by such products when chemically
disposed of.
(7) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(8) When the LEDs are in operation the maximum current should be decided after measuring the
package temperature.
(9) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more
after being shipped from Seoul Semiconductor,
a sealed container with vacuum atmosphere should be used for storage.
(10) The appearance and specifications of the product may be modified for improvement without
notice.
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Product Data Sheet
SDWx1F1C – Chip on Board
25
Precaution for Use
(11) Long time exposure of sun light or occasional UV exposure will cause silicone discoloration.
(12) Attaching LEDs, do not use adhesive that outgas organic vapor.
(13) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the
reverse voltage is applied to LED, migration can be generated resulting in LED damage.
(14) Please do not touch any of the circuit board, components or terminals with bare hands or metal
while circuit is electrically active.
(15) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy. The result can be a significant loss of light output from the fixture. Knowledge of the
properties of the materials selected to be used in the construction of fixtures can help prevent
these issues.
(16) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is
a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
Ⅰ. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
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Product Data Sheet
SDWx1F1C – Chip on Board
26
Precaution for Use
Ⅱ. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.
Ⅲ. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
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Product Data Sheet
SDWx1F1C – Chip on Board
27
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of
light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage
and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than
10,000 patents globally, while offering a wide range of LED technology and production capacity in
areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT -
Multi-Junction Technology" a proprietary family of high-voltage LEDs.
The company’s broad product portfolio includes a wide array of package and device choices such as
Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type
LEDs as well as custom modules, displays, and sensors.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.