ACTIVE COMPONENTS FOR HYBRID CIRCUITS COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES Silicon NPN transistors, low noise (chip) Transistors NPN silicium, faible bruit (pastille) Vv, Vv, I h Vv I F CBO CEO 21E cE c yype (Vv) vj (mA / V) (ma) {aB) ype min - max J.2N 930 45 45 30 100 - 300 5 0,010 3 J.2N 2483 60 60 50 40 - 120 5 0,010 4 J.2N 2484 60 60 50 700 - 500 5 0,010 3 Siticon NPN transistors, fast switching (ship) Transistors NPN silicium, commutation rapide (pastille} Veso Vceo Io No1E Voce Ig ype (Vv) (Vv) (mA) (Vv) (mA) Type Voce R- min - max J.2N 706 25 20* 20* 1 10 J.2N 706 A 25 15 20- 60* 1 10 J.2N 708 40 15 30 - 120* i 10 J.2N 2369 40 15 200 40 - 120* 1 10 Silicon PNP transistors, fast switching (chip) Transistors PNP silicium, commutation rapide (pastille) Vv Vv t h Vv, I T CBO CEO Cc 21E CE Cc Type Vy) a) (mA) (W) (mA) min - max J.2N 2894 12 -12 ~-200 40 - 150* 0,5 30 * Pulsed impulsions 20 210