1
Product Family Data Sheet Rev. 2.5 2018. 10.1
High Voltage LED Series
Chip on Board
LC006D – Gen.1
High efficacy COB LED package
well-suited for use in spotlight applications
Featur
es & Benefits
Chip on Board (COB) solution makes it easy to design in
Simple assembly reduces manufacturing cost
Low thermal resistance
InGaN/GaN MQW LED with long time reliability
Applications
Spotlight / Downlight
LED Retrofit Bulbs
Outdoor Illumination
2
Table of Contents
1.
Characteristics
-----------------------
3
2.
Product Code Information
-----------------------
5
3.
Typical Characteristics Graphs
-----------------------
9
4.
Outline Drawing & Dimension
-----------------------
12
5.
Reliability Test Items & Conditions
-----------------------
13
6.
Label Structure
-----------------------
14
7.
Packing Structure
-----------------------
15
8.
Precautions in Handling & Use
-----------------------
17
3
1. Characteristics
a) Absolute Maximum Rating
Item
Symbol
Rating
Condition
Ambient / Operating Temperature
Ta
-40 ~ +105
-
Storage Temperature
Tstg
-40 ~ +120
-
LED Junction Temperature
TJ
140
-
Case Temperature
Tc
105
Forward Current
IF
460
-
Power Dissipation
PD
17.2
-
ESD (HBM)
-
±2
-
ESD (MM)
-
±0.5
-
b) Electro-optical Characteristics (IF = 180 mA, TJ = 85 ºC)
Item
Unit
Rank
Min.
Typ.
Max.
Forward Voltage (VF)
V
YZ
31.8
34.6
37.5
Color Rendering Index (Ra)
-
5
80
-
-
7
90
Thermal Resistance (junction to chip point)
ºC/W
-
2.4
-
Beam Angle
º
-
115
-
Nominal Power
W
6.4
Notes:
1) The COB is tested in pulsed condition at rated test current (10 ms pulse width) and rated temperature (TJ = TC = Ta = 85 °C)
2) Samsung maintains measurement tolerance of: forward voltage = ±5 %, CRI = ±1
3) Refer to the derating curve, ‘3. Typical Characteristics Graph’ designed within the range.
4
c) Luminous Flux Characteristics (IF = 180 mA)
CRI (Ra)
Min.
Nominal
CCT (K)
Flux
Rank
Flux @ TJ = 85 °C (lm)
Min.
Typ.
Max.
80
2700
E9
791
832
-
D1
832
874
-
3000
F3
831
875
-
D1
875
919
-
3500
F5
857
902
-
D1
902
947
-
4000
F8
877
923
-
D1
923
969
-
5000
F8
882
928
-
D1
928
975
-
5700
F8
882
928
-
D1
928
975
-
6500
F8
872
918
-
D1
918
964
-
CRI (Ra)
Min.
Nominal
CCT (K)
Flux
Rank
Flux @ TJ = 85 °C (lm)
Min.
Typ.
Max.
90
2700
D7
673
709
-
D1
709
744
-
3000
E9
706
743
-
D1
743
780
-
3500
E0
730
768
-
D1
768
807
-
4000
E4
745
784
-
D1
784
824
-
5000
E4
748
787
-
D1
787
827
-
Notes:
5
1) The COB is tested in pulsed operating condition at rated test current (10 ms pulse width) and rated temperature
(Tj = Tc = 85 °C).
2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1
2. Product Code Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
S
P
H
W
H
A
H
D
N
B
2
5
Y
Z
W
3
E
9
Digit
PKG Information
Code
Specification
1 2 3
Samsung Package High Power
SPH
4 5
Color
WH
White
6
Product Version
A
7 8
Form Factor
HD
COB
9
Lens Type
N
No lens
10
Wattage or Model
B
LC006D
11
Internal Code
2
12
CRI & Sorting Temperature
5
Min. 80 (85℃)
7
Min. 90 (85℃)
13 14
Forward Voltage (V)
YZ
31.8~37.5
15
CCT (K)
W
2700K
V
3000K
U
3500K
T
4000K
R
5000K
Q
5700K
P
6500K
16
MacAdam Step
2
MacAdam 2-step
3
MacAdam 3-step
17 18
Luminous Flux (Lm)
D7
Min. 670
E0
Min. 700
E4
Min. 740
E9
Min. 790
F3
Min. 830
F5
Min. 850
F7
Min. 870
F8
D1
Min. 880
Add Rank
6
a) Binning Structure (IF = 180 mA, TJ = 85 ºC)
CRI (Ra)
Min.
Nominal
CCT (K)
Product Code
VF
Rank
Color
Rank
Flux
Rank
Flux Range
(Φv, lm)
80
2700
SPHWHAHDNB25YZW2E9
YZ
W2
E9
791 ~
SPHWHAHDNB25YZW3E9
W3
SPHWHAHDNB25YZW2D1
W2
D1
832 ~
SPHWHAHDNB25YZW3D1
W3
3000
SPHWHAHDNB25YZV2F3
YZ
V2
F3
831 ~
SPHWHAHDNB25YZV3F3
V3
SPHWHAHDNB25YZV2D1
V2
D1
875 ~
SPHWHAHDNB25YZV3D1
V3
3500
SPHWHAHDNB25YZU2F5
YZ
U2
F5
857 ~
SPHWHAHDNB25YZU3F5
U3
SPHWHAHDNB25YZU2D1
U2
D1
902 ~
SPHWHAHDNB25YZU3D1
U3
4000
SPHWHAHDNB25YZT2F8
YZ
T2
F8
877 ~
SPHWHAHDNB25YZT3F8
T3
SPHWHAHDNB25YZT2D1
T2
D1
923 ~
SPHWHAHDNB25YZT3D1
T3
5000
SPHWHAHDNB25YZR3F8
YZ
R2
F8
882 ~
SPHWHAHDNB25YZR3D1
R3
D1
928 ~
5700
SPHWHAHDNB25YZQ3F8
YZ
Q2
F8
882 ~
SPHWHAHDNB25YZQ3D1
Q3
D1
928 ~
6500
SPHWHAHDNB25YZP3F7
YZ
P2
F7
872 ~
SPHWHAHDNB25YZP3D1
P3
D1
918 ~
7
CRI (Ra)
Min.
Nominal
CCT (K)
Product Code
VF
Rank
Color
Rank
Flux
Rank
Flux Range
(Φv, lm)
90
2700
SPHWHAHDNB27YZW2D7
YZ
W2
D7
673 ~
SPHWHAHDNB27YZW3D7
W3
SPHWHAHDNB27YZW2D1
W2
D1
709 ~
SPHWHAHDNB27YZW3D1
W3
3000
SPHWHAHDNB27YZV2E9
YZ
V2
E9
706 ~
SPHWHAHDNB27YZV3E9
V3
SPHWHAHDNB27YZV2D1
V2
D1
743 ~
SPHWHAHDNB27YZV3D1
V3
3500
SPHWHAHDNB27YZU2E0
YZ
U2
E0
730 ~
SPHWHAHDNB27YZU3E0
U3
SPHWHAHDNB27YZU2D1
U2
D1
768 ~
SPHWHAHDNB27YZU3D1
U3
4000
SPHWHAHDNB27YZT2E4
YZ
T2
E4
745 ~
SPHWHAHDNB27YZT3E4
T3
SPHWHAHDNB27YZT2D1
T2
D1
784 ~
SPHWHAHDNB27YZT3D1
T3
5000
SPHWHAHDNB27YZR3E4
YZ
R3
E4
748 ~
SPHWHAHDNB27YZR3D1
R3
D1
787 ~
8
b) Chromaticity Region & Coordinates (IF = 180 mA, TJ = 85 ºC)
MacAdam Ellipse (W2, W3)
MacAdam Ellipse (V2, V3)
Step
CIE x
CIE y
a
b
Step
CIE x
CIE y
a
b
2-step
0.4578
0.4101
53.70
0.0054
0.0028
2-step
0.4338
0.403
53.22
0.0056
0.0027
3-step
0.4578
0.4101
53.70
0.0081
0.0042
3-step
0.4338
0.4030
53.22
0.0083
0.0041
MacAdam Ellipse (U2, U3)
MacAdam Ellipse (T2, T3)
Step
CIE x
CIE y
a
b
Step
CIE x
CIE y
a
b
2-step
0.4073
0.3917
54.00
0.0062
0.0028
2-step
0.3818
0.3797
53.72
0.0063
0.0027
3-step
0.4073
0.3917
54.00
0.0093
0.0041
3-step
0.3818
0.3797
53.72
0.0094
0.0040
MacAdam Ellipse (R3)
MacAdam Ellipse (Q3)
Step
CIE x
CIE y
a
b
Step
CIE x
CIE y
a
b
3-step
0.3447
0.3553
59.62
0.0082
0.0035
3-step
0.3287
0.3417
59.0950
0.0075
0.0032
MacAdam Ellipse (P3)
Step
CIE x
CIE y
a
b
3-step
0.3123
0.3282
58.5700
0.0067
0.0029
Note:
Samsung maintains measurement tolerance of: Cx, Cy = ±0.005
CIE x,y
9
3. Typical Characteristics Graphs
b) Beam Angle Characteristics (IF = 180 mA, TJ = 85 ºC)
CCT: 2700 K (80 CRI) CCT: 3000 K (80 CRI)
CCT: 3500 K (80 CRI) CCT: 4000 K (80 CRI)
CCT: 5000 K (80 CRI) CCT: 5700 K (80 CRI)
0
20
40
60
80
100
400 500 600 700 800
Relative Emission Intensity(%)
Wavelength
Relative Intensity vs. Wavelength
0
20
40
60
80
100
400 500 600 700 800
Relative Emission Intensity(%)
Wavelength(nm)
Relative Intensity vs. Wavelength
0
20
40
60
80
100
400 500 600 700 800
Relative Emission Intensity(%)
Wavelength
Relative Intensity vs. Wavelength
0
20
40
60
80
100
400 500 600 700 800
Relative Emission Intensity(%)
Wavelength
Relative Intensity vs. Wavelength
0
20
40
60
80
100
400 500 600 700 800
Relative Emission Intensity(%)
Wavelength
Relative Intensity vs. Wavelength
0
20
40
60
80
100
400 500 600 700 800
Relative Emission Intensity(%)
Wavelength
Relative Intensity vs. Wavelength
10
CCT: 6500 K (80 CRI)
b) Forward Current Characteristics (TJ = 85 ºC)
C) Temperature Characteristics (IF = 180mA)
0
20
40
60
80
100
400 500 600 700 800
Relative Emission Intensity(%)
Wavelength
Relative Intensity vs. Wavelength
0
100
200
300
400
0 0.1 0.2 0.3 0.4 0.5
Relative Luminous Flux(%)
Forward Current(A)
Relative luminous Flux vs. Forward Current
30
35
40
45
0 0.1 0.2 0.3 0.4 0.5
Forward Voltage(V)
Forward Current(A)
Forward Voltage vs. Forward Current
90
95
100
105
110
115
120
20 35 50 65 80 95 110
Relative Luminous Flux(%)
Tc(℃)
Relative Luminous Flux vs. Temperature
34.0
34.5
35.0
35.5
36.0
20 40 60 80 100
Forward Voltage(V)
Tc(℃)
Forward Voltage vs. Temperature
11
d) Color Shift Characteristics (TJ = 85 ºC, CRI 80+)
e) Beam Angle Characteristics (IF = 180 mA, TJ = 85 ºC)
f) Derating Characteristics
-0.05
-0.04
-0.03
-0.02
-0.01
0
0.00 0.10 0.20 0.30 0.40 0.50
△CIE x,△ CIE y
Forward Current(A)
△CIE x,△CIE y vs. Forward Current
△CIE x
△ CIE y
-0.05
-0.04
-0.03
-0.02
-0.01
0
20 40 60 80 100
△CIE x,△ CIE y
Tc(℃)
△CIEx,△CIEy vs. Temperature
ΔCIE x
ΔCIE y
0
0.2
0.4
0.6
0.8
1
1.2
-100 -80 -60 -40 -20 0 20 40 60 80 100
Relative Luminous Intensity
Angle(°)
0
100
200
300
400
500
020 40 60 80 100 120
If [ mA ]
Tc [ ℃ ]
Derating Curve
12
4. Outline Drawing & Dimension
Item
Dimension
Tolerance
Unit
Length
13.5
±0.15
mm
Width
13.5
±0.15
mm
Height
1.50
±0.20
mm
Light Emitting Surface (LES) Diameter
9.8
±0.30
mm
Note: Denoted product information above is only an example
( LC006D18030 : LC006D, CRI80+, 3000K )
1. Unit: mm
2. Tolerance: ± 0.30 mm
TC
Model
Description
LC006D18030
XXX.....XXXX
LOT No.
SAMSUNG
1727
Internal Code
13
5. Reliability Test Items & Conditions
a) Test Items
Test Item
Test Condition
Test Hour / Cycle
High Temperature
Humidity Life Test
60 ºC, 90 % RH,, DC Derating, IF
1000 h
High Temperature
Life Test
85 ºC, DC Derating, IF
1000 h
Low Temperature
Life Test
-40 ºC, DC , IF = 320 mA
1000 h
Pulsed Operating Life Test
55 ℃, Pulse width 100 ㎲, duty cycle 3 %
1000 h
High Temperature
Storage
120 ºC
1000 h
Low Temperature
Storage
-40 ºC
1000 h
Temperature Humidity
Storage
60 ºC, 90% RH
1000h
Temperature Cycle
On/Off Test
-40 ºC / 85 ºC each 20 min, 30 min transfer
power on/off each 5 min, DC Derating, IF = max
100 cycles
ESD (HBM)
R1: 10 MΩ
R2: 1.5 kΩ
C: 100 pF
V: ±2 kV
5 times
ESD (MM)
R1: 10 MΩ
R2: 0 kΩ
C: 200 pF
V: ±0.2 kV
5 times
Vibration Test
20 ~ 80 Hz (displacement: 0.06 inch, max. 20 g)
80 ~ 2 kHz (max. 20 g)
min. frequency ↔ max. frequency 4 min transfer
4 times
Mechanical Shock Test
1500 g, 0.5 ms
each of the 6 surfaces (3 axis x 2 sides)
5 times
Sulfur Resistance
25 °C, 75%, H2S 15 ppm
504h
b) Criteria for Judging the Damage
Item
Symbol
Test Condition
(Tc = 25 ºC)
Limit
Min.
Max.
Forward Voltage
VF
IF = 180 mA
L.S.L. * 0.9
U.S.L. * 1.1
Luminous Flux
Φv
IF = 180 mA
L.S.L * 0.7
U.S.L * 1.3
14
YZW3E9
SPHWHAHDNB25YZW3E9 YZW3E9 01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
G4AZC4001 / 1001 / xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
YZW3E9
SPHWHAHDNB25YZW3E9 YZW3E9 01
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
①②③④⑤⑥⑦⑧⑨
/1ⓐⓑⓒ/ xxxx pcs
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
Bin Code
Lot Number
Product Code
6. Label Structure
a) Label Structure
Note: Denoted bin code and product code above is only an example (see description on page 5)
Bin Code:
ⓐⓑ: Forward Voltage bin (refer to page 11)
ⓒⓓ: Chromaticity bin (refer to page 9-10)
ⓔⓕ: Luminous Flux bin (refer to page 6)
b) Lot Number
The lot number is composed of the following characters:
① ③④⑤⑥⑦⑧⑨ / 1ⓐⓑⓒ / xxxx pcs
①
: Production site (S: Giheung, Korea, G: Tianjin, China)
②
: 4 (LED)
③
: Product state (A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample)
④
: Year (Z: 2015, A: 2016, B: 2017…)
⑤
: Month (1~9, A, B, C)
⑥⑦⑧⑨
: Day (1~9, A, B~V)
ⓐⓑⓒ
: Product serial number (001 ~ 999)
ⓐⓑⓒⓓⓔⓕ
LC006D RA80 2700K
LC006D RA80 2700K
15
7. Packing Structure
Packing material
Max. quantity
in pcs of COB
Dimension(mm)
Length
Width
Height
Tolerance
Tray
30
160
180
10
1.0
Aluminum Bag
60(2 trays)
210
241
10
Inner Box
240
230
84
260
2
Outer Box
2400
476
445
272
5
a) Packing Structure
Label
Label
16
b) Tray
① Cover ② Body
c) Aluminum Vinyl Packing Bag
17
8. Precautions in Handling & Use
1) This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA
is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the
device.
2) LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped
from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at
temperature 0~40 ºC, 0~90 % RH).
3) After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be:
a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 30 ºC / 60 % RH, or
b. Stored at <10 % RH
4) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place.
5) Devices require baking before mounting, if humidity card reading is >60 % at 23 ± 5 ºC.
6) Devices must be baked for 1 hour at 60 ± 5 ºC, if baking is required.
7) The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or anti-
electrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may
cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as
increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current.
8) The thermal management is one of the most critical factors for the LED lighting system. Especially the LED junction
temperature should not exceed the absolute maximum rating while operation of LED lighting system.
For more information, please refer to Application Note ‘Mechanical & Thermal Guide for COB’.
9) In case of driving LEDs around the minimum current level (If_min), chips might exhibit different brightness due to the
variation in I-V characteristics of each one. This is normal and does not adversely affect the performance of product.
10) VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in
luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a
discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light
emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical
properties of materials used in luminaires and they must be carefully selected.
11) The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead,
please pick at the handling area as indicated below.
Legal and additional information.
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Copyright © 2015 Samsung Electronics Co., Ltd. All rights reserved.
Samsung is a registered trademark of Samsung Electronics Co., Ltd.
Specifications and designs are subject to change without notice. Non-metric
weights and measurements are approximate. All data were deemed correct
at time of creation. Samsung is not liable for errors or omissions. All brand,
product, service names and logos are trademarks and/or registered trademarks
of their respective owners and are hereby recognized and acknowledged.
Samsung Electronics Co., Ltd.
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Giheung-gu
Yongin-si, Gyeonggi-do, 446-711
KOREA
www.samsungled.com