2N3055S SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055S is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS PACKAGE STYLE TO- 3 IC 15 A IB 7.0 A VCE 60 V PDISS 117 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC JC 1.50 OC/W CHARACTERISTICS SYMBOL 2 = Emitter Case = Collector NONE O TC = 25 C TEST CONDITIONS BVCEO IC = 200 mA BVCER IC = 200 mA MINIMUM RBE = 100 TYPICAL MAXIMUM 60 V 70 V O mA mA VCE = 30 V 700 A VEB = 7.0 V 5.0 mA VCE = 100 V ICEO IEBO VCE = 4.0 V VBE = -1.5 V TC = 25 C O TC = 150 C 20 IC = 4.0 A IC = 4.0 A O TC = -55 C IC = 10 A 70 5.0 --- 5.0 IC = 4.0 A IB = 0.4 A 1.1 IC = 10 A IB = 3.3 A 4.0 VBE(ON) VCE = 4.0 V IC = 4.0 A 1.8 ft VCE = 4.0 V IC = 1.0 A Is/b VCE = 40 V t = 1.0 s VCE(SAT) UNITS 5.0 30 ICEX hFE 1 = Base f = 0.5 MHz (NONREPETITIVE) V V MHz 0.8 2.87 A * *** !