AP10N70W - Advanced Power Electronics Corp. USA

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ 100% Avalanche Test BVDSS 600V

▼ Fast Switching Characteristic RDS(ON) 0.6Ω

▼ Simple Drive Requirement ID10A

Description

Absolute Maximum Ratings

Symbol Units

VDS Drain-Source Voltage V

VGS Gate-Source Voltage V

ID@TC=25℃Continuous Drain Current, VGS @ 10V A

ID@TC=100℃Continuous Drain Current, VGS @ 10V A

IDM Pulsed Drain Current1A

PD@TC=25℃Total Power Dissipation W

W/℃

EAS Single Pulse Avalanche Energy2mJ

IAR Avalanche Current A

TSTG ℃

TJOperating Junction Temperature Range ℃

Thermal Data

Symbol Value Unit

Rthj-c Maximum Thermal Resistance, Junction-case 0.72 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient 40 ℃/W

Data & specifications subject to change without notice

174

6.3

1.39

-55 to 150

Parameter

AP10N70W

± 30

Rating

600

RoHS-compliant Product

201022072-1/4

Storage Temperature Range -55 to 150

Parameter

Linear Derating Factor

The TO-3P package is widely preferred for commercial-industrial applications.

The device is suited for switch mode power supplies ,DC-AC converters

and high current high speed switching circuits.

P10N70 series are specially designed as main switching devices for

universal 90~265VAC off-line AC/DC converter applications. The TO-3P type

provide high blocking voltage to overcome voltage surge and sag in the

toughest power system with the best combination of fast switching,

ruggedized design and cost-effectiveness.

GDSTO-3P

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1.0mA 600 - - V

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.0A - - 0.6 Ω

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V

gfs Forward Transconductance VDS=10V, ID=5A - 5 - S

IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA

Drain-Source Leakage Current (Tj=150oC) VDS=480V, VGS=0V - - 100 uA

IGSS Gate-Source Leakage VGS=±30V - - ±100 nA

QgTotal Gate Charge3ID=10A - 36 57 nC

Qgs Gate-Source Charge VDS=480V - 8.3 - nC

Qgd Gate-Drain ("Miller") Charge VGS=10V - 11.5 - nC

td(on) Turn-on Delay Time3VDD=300V - 15 - ns

trRise Time ID=10A - 20 - ns

td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 52 - ns

tfFall Time RD=30Ω-23-ns

Ciss Input Capacitance VGS=0V - 1950 3120 pF

Coss Output Capacitance VDS=15V - 630 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 20 - pF

RgGate Resistance f=1.0MHz - 2 3 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage3Tj=25℃, IS=10A, VGS=0V - - 1.5 V

trr Reverse Recovery Time3IS=10A, VGS=0V, - 575 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 10.6 - uC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=10A.

3.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

AP10N70W

2/4

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature

5. Forward Characteristic o

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3/4

AP10N70W

0.8

0.9

1.1

1.2

1.3

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized BVDSS (V)

0 5 10 15 20

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=25oC10V

6.0V

5.0V

4.5V

VG=4.0V

0.8

1.2

1.6

2.4

2.8

3.2

25 50 75 100 125 150

Tj , Junction Temperature ( oC )

Normalized RDS(ON)

ID=5A

VG=10V

0 10203040

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=150oC10V

6.0V

5.0V

4.5V

VG=4.0V

0.1

0 0.2 0.4 0.6 0.8 1 1.2

VSD , Source-to-Drain Voltage (V)

IS (A)

Tj = 150oCT

j = 25oC

0.4

0.6

0.8

1.2

1.4

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

4/4

AP10N70W

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Normalized Th e rmal Re sponse (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.02

0.01

0.05

0.1

0.2

Duty factor=0.5

Single Pulse

0.1

100

1 10 100 1000

VDS , Drain-to-Source Voltage (V)

ID (A)

Tc=25oC

Single Pulse 1S

100us

1ms

10ms

100ms

0204060

QG , Total Gate Charge (nC)

VGS , Gate to Sourc e Voltage ( V)

ID=10A

VDS =320V

VDS =400V

VDS =480V

100

10000

1 5 9 13 17 21 25 29

VDS , Drain-to-Source Voltage (V)

C (pF)

=1.0MH

Ciss

Coss

Crss

td(on) trtd(off)tf

VDS

VGS

10%

90%

10V

QGS QGD

Charge

Package Outline : TO-3P

Millimeters

MIN NOM MAX

A 4.50 4.80 5.10

b0.90 1.00 1.30

b1 1.80 2.50 3.20

b2 1.30 -- 2.30

c0.40 0.60 0.90

c1 1.40 -- 2.20

D 19.70 20.00 20.30

D1 14.70 15.00 15.30

E 15.30 -- 16.10

b2 e4.45 5.45 6.45

L 17.50 -- 20.50

φ3.00 3.20 3.40

1.All Dimensions Are in Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : TO-3P

SYMBOL

ADVANCED POWER ELECTRONICS CORP.

Package

Part Number

10N70W

YWWSSS LOGO

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS ：Sequence