© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1Publication Order Number:
NGTB20N120IHS/D
NGTB20N120IHSWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
•Low Saturation Voltage using Trench with Field Stop Technology
•Low Switching Loss Reduces System Power Dissipation
•Optimized for Low Case Temperature in IH Cooker Application
•Low Gate Charge
•These are Pb−Free Devices
Typical Applications
•Inductive Heating
•Consumer Appliances
•Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current
@ TC = 25°C
@ TC = 100°C
IC
40
20
A
Pulsed collector current, Tpulse
limited by TJmax
ICM 120 A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
40
20
A
Diode pulsed current, Tpulse limited
by TJmax
IFM 120 A
Gate−emitter voltage VGE $20 V
Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD
156
62.5
W
Operating junction temperature
range
TJ−55 to +150 °C
Storage temperature range Tstg −55 to +150 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
TSLD 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
TO−247
CASE 340L
STYLE 4
C
G
20 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.65 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB20N120IHSWG TO−247
(Pb−Free)
30 Units / Rail
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A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
20N120IHS
AYWWG
G
E
C
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THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.80 °C/W
Thermal resistance junction−to−case, for Diode RqJC 2.0 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
VGE = 0 V, IC = 500 mAV(BR)CES 1200 − − V
Collector−emitter saturation voltage VGE = 15 V, IC = 20 A
VGE = 15 V, IC = 20 A, TJ = 150°C
VCEsat −
−
2.10
2.5
2.4
−
V
Gate−emitter threshold voltage VGE = VCE, IC = 50 mAVGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 150°C
ICES −
−
−
−
0.5
2.0
mA
Gate leakage current, collector−emitter
short−circuited
VGE = 20 V, VCE = 0 V IGES − − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
VCE = 20 V, VGE = 0 V, f = 1 MHz
Cies −3600 −pF
Output capacitance Coes −90 −
Reverse transfer capacitance Cres −65 −
Gate charge total
VCE = 600 V, IC = 20 A, VGE = 15 V
Qg−155 −nC
Gate to emitter charge Qge −30 −
Gate to collector charge Qgc −70 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time TJ = 25°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
td(off) −160 −ns
Fall time tf−160 −
Turn−off switching loss Eoff −0.65 −mJ
Turn−off delay time TJ = 125°C
VCC = 600 V, IC = 20 A
Rg = 10 W
VGE = 0 V/ 15V
td(off) −167 −ns
Fall time tf−205 −
Turn−off switching loss Eoff −1.20 −mJ
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 20 A
VGE = 0 V, IF = 20 A, TJ = 150°C
VF−
−
1.55
1.65
1.75
−
V
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TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
843210
0
20
40
80
100
140
160
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
16840
0
20
40
60
80
100
140
Figure 5. VCE(sat) vs. TJFigure 6. Typical Capacitance
TJ, JUNCTION TEMPERATURE (°C) VCE, COLLECTOR−EMITTER VOLTAGE (V)
130100704010−20−50
0
1
3
4
20014012010060200
10
100
1000
10,000
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
VCE, COLLECTOR−EMITTER
VOLTAGE (V)
CAPACITANCE (pF)
VGE = 20 to 13 V
TJ = 25°C
10 V
9 V
8 V
7 V
843210
0
20
40
60
80
100
160
IC, COLLECTOR CURRENT (A)
VGE = 20 to 15 V
TJ = 150°C
10 V
9 V
8 V
7 V
843210
0
20
100
40
80
60
160
IC, COLLECTOR CURRENT (A)
VGE = 20 to 13 V
TJ = −40°C
10 V
9 V
8 V
TJ = 25°CTJ = 150°C
160
11 V
11 V
7 V
Cies
Coes
Cres
567
60
120 120
140
11 V
13 V
120
140 120
2
IC = 40 A
IC = 20 A
IC = 10 A
IC = 5 A
567
567 12
40 80 160 180
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TYPICAL CHARACTERISTICS
tf
td(off)
tf
td(off)
Figure 7. Diode Forward Characteristics Figure 8. Typical Gate Charge
VF
, FORWARD VOLTAGE (V) QG, GATE CHARGE (nC)
2.01.00.50
0
20
40
60
80
120
140120100806040200
0
2
6
8
16
Figure 9. Switching Loss vs. Temperature Figure 10. Switching Time vs. Temperature
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
140120100806040200
0
0.2
1.0
1.6
806040200
0
10
100
1000
Figure 11. Switching Loss vs. ICFigure 12. Switching Time vs. IC
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
322620148
0
1.0
1.5
3.0
38322620148
1
10
100
1000
IF
, FORWARD CURRENT (A)
VGE, GATE−EMITTER VOLTAGE (V)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
4.5
100
180
160 100 120
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
44
12
3.0
140 160
38 44
TJ = 25°C
TJ = 150°C
1.5 2.5 3.5 4.0
VCE = 600 V
VCE = 600 V
VGE = 15 V
IC = 20 A
Rg = 10 W
0.4
0.6
0.8
1.2
1.4
0.5
2.0
2.5
VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 10 W
160
4
10
14
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TYPICAL CHARACTERISTICS
tf
td(off)
Figure 13. Switching Loss vs. Rg Figure 14. Switching Time vs. Rg
Rg, GATE RESISTOR (W) Rg, GATE RESISTOR (W)
756555453525155
0
0.8
1.2
2.0
756555453525155
1
10
100
1000
Figure 15. Switching Loss vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
725675625575525475425375
0
0.8
1.2
2.0
Eoff, TURN−OFF SWITCHING LOSS (mJ)
SWITCHING TIME (ns)
Eoff, TURN−OFF SWITCHING LOSS (mJ)
85 85
VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
775
tf
td(off)
VGE = 15 V
IC = 20 A
Rg = 10 W
TJ = 150°C
0.4
1.6
Figure 16. Switching Time vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
725675625575525475425375
1
10
100
1000
SWITCHING TIME (ns)
775
Figure 17. Safe Operating Area Figure 18. Reverse Bias Safe Operating Area
0.4
1.6
VGE = 15 V
IC = 20 A
Rg = 10 W
TJ = 150°C
VCE, COLLECTOR−EMITTER VOLTAGE (V)
10001001010.1
0.01
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (A)
50 ms
100 ms
1 ms
dc operation
IC(max) Pulsed
IC(max) Continuous
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1000100101
1
10
100
1000
IC, COLLECTOR CURRENT (A)
VGE = 15 V, TC = 125°C
VCE = 600 V
VGE = 15 V
IC = 20 A
TJ = 150°C
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TYPICAL CHARACTERISTICS
Figure 19. IGBT Transient Thermal Impedance
Figure 20. Diode Transient Thermal Impedance
PULSE TIME (sec)
1000100100.10.010.0010.00010.000001
0.0001
0.001
0.01
0.1
THERMAL RESPONSE (ZqJC)
10.00001
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
Junction
C1C2
R1R2
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Ri (°C/W) ti (sec)
1.48E−4
0.002
0.03
0.25813
0.577
0.671
PULSE TIME (sec)
1000100100.10.010.0010.00010.000001
0.001
0.1
1
10
THERMAL RESPONSE (ZqJC)
10.00001
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse
0.01
RqJA = 0.8
RqJA = 2.0
Case
Cn
Rn
0.1
2.0
0.387
0.1057
Junction
C1C2
R1R2
Ci = ti/Ri
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
Ri (°C/W) ti (sec)
1.76E−4
0.002
0.03
0.08061
0.140
0.190
Case
Cn
Rn
0.1
2.0
0.237
0.114
1.0E−40.03570
Figure 21. Test Circuit for Switching Characteristics
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Figure 22. Definition of Turn On Waveform
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8
Figure 23. Definition of Turn Off Waveform
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9
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
N
P
A
K
W
F
D
G
U
E
0.25 (0.010) MYQS
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
−Q−
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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