TYPICAL PERFORMANCE CURVES 1200V APT25GN120B_S(G) APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G C E E * 1200V Field Stop * Trench Gate: Low VCE(on) * Easy Paralleling * Integrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25C unless otherwise specified. Parameter APT25GN120B(G) VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter Voltage 30 I C1 Continuous Collector Current @ TC = 25C 67 I C2 Continuous Collector Current @ TC = 110C 33 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 75 Switching Safe Operating Area @ TJ = 150C 75A @ 1200V Total Power Dissipation 272 Operating and Storage Junction Temperature Range Watts -55 to 150 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. C 300 STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 150A) VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 1mA, Tj = 25C) I GES RG(int) 5 5.8 6.5 1.4 1.7 2.1 Units Volts Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 25C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) MAX 1200 Collector-Emitter On Voltage (VGE = 15V, I C = 25A, Tj = 125C) I CES TYP 1.9 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) 100 2 Gate-Emitter Leakage Current (VGE = 20V) 600 8 Integrated Gate Resistor CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com A TBD nA 9-2009 V(BR)CES MIN Rev E Characteristic / Test Conditions 050-7600 Symbol APT25GN120B_S(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA Total Gate Charge 3 Gate-Emitter Charge TYP Capacitance 1800 VGE = 0V, VCE = 25V 105 f = 1 MHz 85 Gate Charge 9.5 VGE = 15V 155 VCE = 600V 10 I C = 25A 85 Gate-Collector ("Miller ") Charge TJ = 150C, R G = 4.3 7, VGE = Switching Safe Operating Area MIN 15V, L = 100H,VCE = 1200V Inductive Switching (25C) 22 tr Current Rise Time VCC = 800V 17 td(off) Turn-off Delay Time VGE = 15V 280 I C = 25A 135 RG = 1.0 7 TBD Eon1 Eon2 Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) TJ = +25C 5 Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125C) 22 tr Current Rise Time VCC = 800V 17 Turn-off Delay Time VGE = 15V 335 I C = 25A RG = 1.0 7 225 TBD TJ = +125C 2390 tf 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Diode) Eoff Turn-off Switching Energy ns mJ 2150 Current Fall Time Eon1 nC 1490 6 Eoff td(off) V A Turn-on Delay Time Current Fall Time UNIT pF 75 td(on) tf MAX 55 66 ns mJ 3075 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RJC Junction to Case (IGBT) .46 RJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 050-7600 Rev E 9-2009 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 80 80 70 IC, COLLECTOR CURRENT (A) 12V 60 11V 50 40 10V 30 9V 20 8V 10 9V 20 0 8V 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 125C) 16 250s PULSE TEST<0.5 % DUTY CYCLE 60 TJ = 125C 45 TJ = 25C 30 TJ = -55C 15 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 25A C T = 25C J 14 VCE = 240V 12 VCE = 600V 10 VCE = 960V 8 6 4 2 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) 0 20 3.5 IC = 50A 3 2.5 IC = 25A 2 1.5 IC = 12.5A 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 3 IC = 50A 2.5 2 IC = 25A 1.5 IC = 12.5A 1 0.5 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90 1.10 1.05 60 80 100 120 140 160 180 GATE CHARGE (nC) FIGURE 4, Gate Charge IC, DC COLLECTOR CURRENT(A) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4 40 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 9-2009 IC, COLLECTOR CURRENT (A) 10V 30 7V 7V FIGURE 1, Output Characteristics(TJ = 25C) 0 11V 40 10 0 5 10 15 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 75 12V 50 Rev E 0 60 050-7600 IC, COLLECTOR CURRENT (A) 15V 15V 70 APT25GN120B_S(G) 350 25 VGE = 15V 20 15 10 VCE = 800V TJ = 25C, or 125C RG = 4.3 L = 100H 5 0 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 30 300 VGE =15V,TJ=125C 250 VGE =15V,TJ=25C 200 150 100 VCE = 800V RG = 4.3 L = 100H 50 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 10 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 45 300 RG = 4.3, L = 100H, VCE = 800V RG = 4.3, L = 100H, VCE = 800V 40 250 TJ = 125C, VGE = 15V tf, FALL TIME (ns) tr, RISE TIME (ns) 35 30 25 20 15 200 150 TJ = 25C, VGE = 15V 100 TJ = 25 or 125C,VGE = 15V 10 50 5 0 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 7000 V = 800V CE V = +15V GE R = 4.3 6000 EOFF, TURN OFF ENERGY LOSS (J) EON2, TURN ON ENERGY LOSS (J) 7000 G TJ = 125C 5000 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 3000 2000 1000 TJ = 25C 0 10000 Eoff,50A 8000 6000 Eoff,25A Eon2,25A 2000 0 Eoff,12.5A Eon2,12.5A 0 TJ = 125C 5000 4000 3000 2000 TJ = 25C 1000 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (J) SWITCHING ENERGY LOSSES (J) 9-2009 Rev E 050-7600 Eon2,50A J 4000 G 7000 V = 800V CE V = +15V GE T = 125C 12000 6000 0 10 15 20 25 30 35 40 45 50 55 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 14000 V = 800V CE V = +15V GE R = 4.3 V = 800V CE V = +15V GE R = 4.3 6000 Eoff,50A G 5000 4000 Eon2,50A 3000 Eoff,25A 2000 Eon2,25A Eoff,12.5A 1000 0 Eon2,12.5A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES IC, COLLECTOR CURRENT (A) Cies 1,000 P C, CAPACITANCE ( F) APT25GN120B_S(G) 80 4,000 500 100 Coes 50 Cres 70 60 50 40 30 20 10 0 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area D = 0.9 0.40 0.7 0.30 0.5 Note: 0.20 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.50 0.3 t2 0.10 SINGLE PULSE 0.1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 0.05 0 t1 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.00826 0.169 0.353 Case temperature. (C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 10 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf T = 125C J T = 75C C D = 50 % = 800V V CE R = 4.3 f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R JC G 5 10 15 20 25 30 35 40 45 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 9-2009 0.0536 Power (watts) 50 Rev E Junction temp. (C) 100 050-7600 RC MODEL FMAX, OPERATING FREQUENCY (kHz) 140 APT25GN120B_S(G) Gate Voltage 10% APT30DQ120 TJ = 125C td(on) IC V CC 90% V CE Collector Current tr 5% 10% 5% A CollectorVoltage Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage TJ = 125C CollectorVoltage td(off) 90% tf 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 3 TO-247 Package Outline D PAK Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC Collector e3 100% Sn Plated 5.38 (.212) 6.20 (.244) Collector (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 9-2009 4.50 (.177) Max. Rev E Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 050-7600 13.41 (.528) 13.51(.532) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector Emitter 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Emitter Collector Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) and Leads are Plated