GL865D31613T001 - Telit - Datasheet.Live

050-7600 Rev E 9-2009

APT25GN120B_S(G)TYPICAL PERFORMANCE CURVES

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise speciﬁ ed.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 150µA)

Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C)

Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C)

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2

Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2

Gate-Emitter Leakage Current (VGE = ±20V)

Integrated Gate Resistor

Symbol

V(BR)CES

VGE(TH)

VCE(ON)

ICES

IGES

RG(int)

Units

Volts

µA

nA

Ω

Symbol

VCES

VGE

IC1

IC2

ICM

SSOA

PD

TJ,TSTG

TL

APT25GN120B(G)

1200

±30

67

33

75

75A @ 1200V

272

-55 to 150

300

UNIT

Volts

Amps

Watts

°C

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Continuous Collector Current @ TC = 25°C

Continuous Collector Current @ TC = 110°C

Pulsed Collector Current 1

Switching Safe Operating Area @ TJ = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS

MIN TYP MAX

1200

5 5.8 6.5

1.4 1.7 2.1

1.9

100

TBD

600

8

G

C

E

1200V

APT25GN120B APT25GN120S

APT25GN120BG* APT25GN120SG*

*G Denotes RoHS Compliant, Pb Free Terminal Finish.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

low VCE(ON) and are ideal for low frequency applications that require absolute minimum

conduction loss. Easy paralleling is a result of very tight parameter distribution and

a slightly positive VCE(ON) temperature coefﬁ cient. A built-in gate resistor ensures

extremely reliable operation, even in the event of a short circuit fault. Low gate charge

simpliﬁ es gate drive design and minimizes losses.

• 1200V Field Stop

• Trench Gate: Low VCE(on)

• Easy Paralleling

• Integrated Gate Resistor: Low EMI, High Reliability

TO-247

GCE

D3PAK

G

C

E

(S)

(B)

Microsemi Website - http://www.microsemi.com

050-7600 Rev E 9-2009

APT25GN120B_S(G)

DYNAMIC CHARACTERISTICS

UNIT

°C/W

gm

MIN TYP MAX

.46

N/A

5.9

Characteristic

Junction to Case (IGBT)

Junction to Case (DIODE)

Package Weight

Symbol

RθJC

WT

THERMAL AND MECHANICAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471.

4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current

adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in ﬁ gure 21, but with a Silicon Carbide diode.

5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching

loss. (See Figures 21, 22.)

6 E

off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)

7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)

Microsemi Reserves the right to change, without notice, the speciﬁ cations and information contained herein.

Symbol

Cies

Coes

Cres

VGEP

Qg

Qge

Qgc

SSOA

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

td(on)

tr

td(off)

tf

Eon1

Eon2

Eoff

Test Conditions

Capacitance

VGE = 0V, VCE = 25V

f = 1 MHz

Gate Charge

VGE = 15V

VCE = 600V

IC = 25A

TJ = 150°C, RG = 4.3Ω 7, VGE =

15V, L = 100µH,VCE = 1200V

Inductive Switching (25°C)

VCC = 800V

VGE = 15V

IC = 25A

RG = 1.0Ω 7

TJ = +25°C

Inductive Switching (125°C)

VCC = 800V

VGE = 15V

IC = 25A

RG = 1.0Ω 7

TJ = +125°C

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate-to-Emitter Plateau Voltage

Total Gate Charge 3

Gate-Emitter Charge

Gate-Collector ("Miller ") Charge

Switching Safe Operating Area

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4

Turn-on Switching Energy (Diode) 5

Turn-off Switching Energy 6

Turn-on Delay Time

Current Rise Time

Turn-off Delay Time

Current Fall Time

Turn-on Switching Energy 4 4

Turn-on Switching Energy (Diode) 55

Turn-off Switching Energy 66

MIN TYP MAX

1800

105

85

9.5

155

10

85

75

22

17

280

135

TBD

1490

2150

22

17

335

225

TBD

2390

3075

UNIT

pF

V

nC

A

ns

mJ

ns

mJ

050-7600 Rev E 9-2009

APT25GN120B_S(G)TYPICAL PERFORMANCE CURVES

BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

VOLTAGE (NORMALIZED)

I

C, DC COLLECTOR CURRENT(A) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A)

VCE = 960V

VCE = 600V

VCE = 240V

IC = 25A

TJ = 25°C

250µs PULSE

TEST<0.5 % DUTY

CYCLE

80

70

60

50

40

30

20

10

0

75

60

45

30

15

0

4

3.5

3

2.5

2

1.5

1.0

0.5

0

1.10

1.05

1.00

0.95

0.90

80

70

60

50

40

30

20

10

0

16

14

12

10

8

6

4

2

0

3

2.5

2

1.5

1

0.5

0

90

80

70

60

50

40

30

20

10

0

V

CE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(TJ = 25°C) FIGURE 2, Output Characteristics (TJ = 125°C)

VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge

V

GE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature

T

J, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature

15V

11V

9V

8V

12V

10V

7V

15V

11V

10V

9V

12V

8V

7V

TJ = 125°C

TJ = 25°C

TJ = -55°C

TJ = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

IC = 50A

IC = 25A

IC = 12.5A

VGE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

IC = 50A

IC = 25A

IC = 12.5A

0 5 10 15 0 5 10 15

0 2 4 6 8 10 12 14 0 20 40 60 80 100 120 140 160 180

8 10 12 14 16 -50 -25 0 25 50 75 100 125

-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150

050-7600 Rev E 9-2009

APT25GN120B_S(G)

VGE =15V,TJ=125°C

VGE =15V,TJ=25°C

VCE = 800V

RG = 4.3Ω

L = 100µH

SWITCHING ENERGY LOSSES (µJ) EON2, TURN ON ENERGY LOSS (µJ) tr, RISE TIME (ns) td(ON), TURN-ON DELAY TIME (ns)

SWITCHING ENERGY LOSSES (µJ) EOFF, TURN OFF ENERGY LOSS (µJ) tf, FALL TIME (ns) td (OFF), TURN-OFF DELAY TIME (ns)

I

CE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current

ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current

I

CE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)

FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current

R

G, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature

VCE = 800V

VGE = +15V

RG = 4.3Ω

RG = 4.3Ω, L = 100µH, VCE = 800V

VCE = 800V

TJ = 25°C, or 125°C

RG = 4.3Ω

L = 100µH

30

25

20

15

10

5

0

45

40

35

30

25

20

15

10

5

0

7000

6000

5000

4000

3000

2000

1000

0

14000

12000

10000

8000

6000

4000

2000

0

VGE = 15V

TJ = 125°C, VGE = 15V

TJ = 25 or 125°C,VGE = 15V

TJ = 25°C, VGE = 15V

TJ = 125°C

TJ = 25°C

VCE = 800V

VGE = +15V

RG = 4.3Ω

TJ = 125°C

TJ = 25°C

VCE = 800V

VGE = +15V

RG = 4.3Ω

Eon2,50A

Eoff,50A

Eoff,25A

Eon2,25A

Eon2,12.5A

Eoff,12.5A

Eon2,50A

Eoff,50A

Eon2,25A

Eoff,25A

Eon2,12.5A

Eoff,12.5A

VCE = 800V

VGE = +15V

TJ = 125°C

10 15 20 25 30 35 40 45 50 55 10 20 30 40 50 60

10 15 20 25 30 35 40 45 50 55 10 15 20 25 30 35 40 45 50 55

0 10 20 30 40 50 0 25 50 75 100 125

RG = 4.3Ω, L = 100µH, VCE = 800V

350

300

250

200

150

100

50

0

300

250

200

150

100

50

0

7000

6000

5000

4000

3000

2000

1000

0

7000

6000

5000

4000

3000

2000

1000

0

050-7600 Rev E 9-2009

APT25GN120B_S(G)TYPICAL PERFORMANCE CURVES

0.50

0.40

0.30

0.20

0.10

0

ZθJC, THERMAL IMPEDANCE (°C/W)

0.3

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

10-5 10-4 10-3 10-2 10-1 1.0

4,000

1,000

500

100

50

10

80

70

60

50

40

30

20

10

0

C, CAPACITANCE (PF)

IC, COLLECTOR CURRENT (A)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE

Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area

0 10 20 30 40 50 0 200 400 600 800 1000 1200 1400

FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL

5 10 15 20 25 30 35 40 45

FMAX, OPERATING FREQUENCY (kHz)

IC, COLLECTOR CURRENT (A)

Figure 20, Operating Frequency vs Collector Current

140

100

50

10

Coes

Cres

0.5

0.1

0.05

Fmax = min (fmax, f max2)

0.05

fmax1 =

t d(on) + tr + td(off) + tf

Pdiss - Pcond

Eon2

+ E off

fmax2 =

Pdiss = TJ - T C

RθJC

Cies

TJ = 125°C

TC = 75°C

D = 50 %

VCE = 800V

RG = 4.3Ω

Peak T

J

= P

DM

x Z

θJC + TC

Duty Factor D = t1/t2

t2

t1

P

DM

Note:

D = 0.9

0.0536

0.169

0.00826

0.353

Power

(watts)

RC MODEL

Junction

temp. (°C)

Case temperature. (°C)

050-7600 Rev E 9-2009

APT25GN120B_S(G)

Figure 22, Turn-on Switching Waveforms and Deﬁ nitions

Figure 23, Turn-off Switching Waveforms and Deﬁ nitions

TJ = 125°C

Collector Current

CollectorVoltage

Gate Voltage

Switching Energy

5%

10%

td(on)

90%

10%

tr

5%

TJ = 125°C

CollectorVoltage

Collector Current

Gate Voltage

Switching Energy

0

90%

td(off)

10%

tf

90%

I

C

A

D.U.T.

V

CE

Figure 21, Inductive Switching Test Circuit

V

CC

APT30DQ120

TO-247 Package Outline

15.49 (.610)

16.26 (.640)

5.38 (.212)

6.20 (.244)

6.15 (.242) BSC

4.50 (.177) Max.

19.81 (.780)

20.32 (.800)

20.80 (.819)

21.46 (.845)

1.65 (.065)

2.13 (.084)

1.01 (.040)

1.40 (.055)

3.50 (.138)

3.81 (.150)

2.87 (.113)

3.12 (.123)

4.69 (.185)

5.31 (.209)

1.49 (.059)

2.49 (.098)

2.21 (.087)

2.59 (.102)

0.40 (.016)

0.79 (.031)

Collector

Emitter

Gate

5.45 (.215) BSC

Dimensions in Millimeters and (Inches)

2-Plcs.

15.95 (.628)

16.05(.632)

1.22 (.048)

1.32 (.052)

5.45 (.215) BSC

{2 Plcs.}

4.98 (.196)

5.08 (.200)

1.47 (.058)

1.57 (.062)

2.67 (.105)

2.84 (.112)

0.46 (.018)

{3 Plcs}

0.56 (.022)

Dimensions in Millimeters (Inches)

Heat Sink (Collector)

and Leads are Plated

3.81 (.150)

4.06 (.160)

(Base of Lead)

Collector

(Heat Sink)

1.98 (.078)

2.08 (.082)

Gate

Collector

Emitter

0.020 (.001)

0.178 (.007)

1.27 (.050)

1.40 (.055)

11.51 (.453)

11.61 (.457)

13.41 (.528)

13.51(.532)

Revised

8/29/97

1.04 (.041)

1.15(.045)

13.79 (.543)

13.99(.551)

Revised

4/18/95

D3PAK Package Outline

e1 SAC: Tin, Silver, Copper e3 100% Sn Plated