W9425G6JB
4 M 4 BANKS 16 BITS DDR SDRAM
Publication Release Date: Oct. 04, 2012
- 1 - Revision A03
Table of Contents-
1. GENERAL DESCRIPTION ............................................................................................................. 4
2. FEATURES .................................................................................................................................... 4
3. ORDER INFORMATION ................................................................................................................ 4
4. KEY PARAMETERS ...................................................................................................................... 5
5. BALL CONFIGURATION ............................................................................................................... 6
6. BALL DESCRIPTION ..................................................................................................................... 7
7. BLOCK DIAGRAM ......................................................................................................................... 8
8. FUNCTIONAL DESCRIPTION ....................................................................................................... 9
8.1 Power Up Sequence ............................................................................................................ 9
8.2 Command Function ........................................................................................................... 10
8.2.1 Bank Activate Command ........................................................................................ 10
8.2.2 Bank Precharge Command .................................................................................... 10
8.2.3 Precharge All Command ........................................................................................ 10
8.2.4 Write Command ...................................................................................................... 10
8.2.5 Write with Auto-precharge Command .................................................................... 10
8.2.6 Read Command ...................................................................................................... 10
8.2.7 Read with Auto-precharge Command .................................................................... 10
8.2.8 Mode Register Set Command ................................................................................ 11
8.2.9 Extended Mode Register Set Command ................................................................ 11
8.2.10 No-Operation Command ........................................................................................ 11
8.2.11 Burst Read Stop Command .................................................................................... 11
8.2.12 Device Deselect Command .................................................................................... 11
8.2.13 Auto Refresh Command ......................................................................................... 11
8.2.14 Self Refresh Entry Command ................................................................................. 12
8.2.15 Self Refresh Exit Command ................................................................................... 12
8.2.16 Data Write Enable /Disable Command ................................................................... 12
8.3 Read Operation ................................................................................................................. 12
8.4 Write Operation ................................................................................................................. 13
8.5 Precharge .......................................................................................................................... 13
8.6 Burst Termination .............................................................................................................. 13
8.7 Refresh Operation ............................................................................................................. 13
8.8 Power Down Mode ............................................................................................................ 14
8.9 Input Clock Frequency Change during Precharge Power Down Mode ............................ 14
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 2 - Revision A03
8.10 Mode Register Operation .................................................................................................. 14
8.10.1 Burst Length field (A2 to A0) .................................................................................. 14
8.10.2 Addressing Mode Select (A3) ................................................................................. 15
8.10.3 CAS Latency field (A6 to A4) .................................................................................. 16
8.10.4 DLL Reset bit (A8) .................................................................................................. 16
8.10.5 Mode Register /Extended Mode register change bits (BA0, BA1) ......................... 16
8.10.6 Extended Mode Register field ................................................................................ 16
8.10.7 Reserved field ......................................................................................................... 16
9. OPERATION MODE .................................................................................................................... 17
9.1 Simplified Truth Table ........................................................................................................ 17
9.2 Function Truth Table ......................................................................................................... 18
9.3 Function Truth Table for CKE ............................................................................................ 21
9.4 Simplified Stated Diagram ................................................................................................. 22
10. ELECTRICAL CHARACTERISTICS ............................................................................................ 23
10.1 Absolute Maximum Ratings ............................................................................................... 23
10.2 Recommended DC Operating Conditions ......................................................................... 23
10.3 Capacitance ....................................................................................................................... 24
10.4 Leakage and Output Buffer Characteristics ...................................................................... 24
10.5 DC Characteristics ............................................................................................................. 25
10.6 AC Characteristics and Operating Condition ..................................................................... 26
10.7 AC Test Conditions ............................................................................................................ 27
11. SYSTEM CHARACTERISTICS FOR DDR SDRAM .................................................................... 29
11.1 Table 1: Input Slew Rate for DQ, DQS, and DM ............................................................... 29
11.2 Table 2: Input Setup & Hold Time Derating for Slew Rate ................................................ 29
11.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate .................................... 29
11.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate .................... 29
11.5 Table 5: Output Slew Rate Characteristics (X16 Devices only) ........................................ 29
11.6 System Notes: ................................................................................................................... 30
12. TIMING WAVEFORMS ................................................................................................................ 32
12.1 Command Input Timing ..................................................................................................... 32
12.2 Timing of the CLK Signals ................................................................................................. 32
12.3 Read Timing (Burst Length = 4) ........................................................................................ 33
12.4 Write Timing (Burst Length = 4) ........................................................................................ 34
12.5 DM, DATA MASK (W9425G6JB) ...................................................................................... 35
12.6 Mode Register Set (MRS) Timing ..................................................................................... 36
12.7 Extend Mode Register Set (EMRS) Timing ....................................................................... 37
12.8 Auto-precharge Timing (Read Cycle, CL = 2) ................................................................... 38
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 3 - Revision A03
12.9 Auto-precharge Timing (Read cycle, CL = 2), continued .................................................. 39
12.10 Auto-precharge Timing (Write Cycle) ................................................................................ 40
12.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8) .............................................................. 41
12.12 Burst Read Stop (BL = 8) .................................................................................................. 41
12.13 Read Interrupted by Write & BST (BL = 8) ........................................................................ 42
12.14 Read Interrupted by Precharge (BL = 8) ........................................................................... 42
12.15 Write Interrupted by Write (BL = 2, 4, 8)............................................................................ 43
12.16 Write Interrupted by Read (CL = 2, BL = 8) ....................................................................... 43
12.17 Write Interrupted by Read (CL = 3, BL = 4) ....................................................................... 44
12.18 Write Interrupted by Precharge (BL = 8) ........................................................................... 44
12.19 2 Bank Interleave Read Operation (CL = 2, BL = 2) ......................................................... 45
12.20 2 Bank Interleave Read Operation (CL = 2, BL = 4) ......................................................... 45
12.21 4 Bank Interleave Read Operation (CL = 2, BL = 2) ......................................................... 46
12.22 4 Bank Interleave Read Operation (CL = 2, BL = 4) ......................................................... 46
12.23 Auto Refresh Cycle ............................................................................................................ 47
12.24 Precharged/Active Power Down Mode Entry and Exit Timing .......................................... 47
12.25 Input Clock Frequency Change during Precharge Power Down Mode Timing ................. 47
12.26 Self Refresh Entry and Exit Timing ................................................................................... 48
13. PACKAGE SPECIFICATION ....................................................................................................... 49
14. REVISION HISTORY ................................................................................................................... 50
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 4 - Revision A03
1. GENERAL DESCRIPTION
W9425G6JB is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM), organized as 4,194,304 words 4 banks 16 bits. W9425G6JB delivers a data bandwidth
of up to 400M words per second (-5). To fully comply with the personal computer industrial standard,
W9425G6JB is sorted into two speed grades: 5 and -5I. The -5/-5I is compliant to the DDR400/CL3
specification (the -5I grade which is guaranteed to support -40°C ~ 85°C).
All Input reference to the positive edge of CLK (except for DQ, DM and CKE). The timing reference
point for the differential clock is when the CLK and
CLK
signals cross during a transition. Write and
Read data are synchronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W9425G6JB is ideal for main memory in
high performance applications.
2. FEATURES
2.5V 0.2V Power Supply
Up to 200 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and
CLK
)
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2, 2.5 and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8µS refresh interval (8K/ 64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
Packaged in 60 Ball TFBGA (8X13 mm2), using Lead free materials with RoHS compliant
3. ORDER INFORMATION
PART NUMBER
SPEED
SELF REFRESH
CURRENT (MAX.)
OPERATING
TEMPERATURE
W9425G6JB-5
DDR400/CL3
2 mA
0°C ~ 70°C
W9425G6JB-5I
DDR400/CL3
2 mA
-40°C ~ 85°C
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 5 - Revision A03
4. KEY PARAMETERS
SYMBOL
DESCRIPTION
MIN./MAX.
tCK
Clock Cycle Time
CL = 2
Min.
Max.
CL = 2.5
Min.
Max.
CL = 3
Min.
Max.
tRAS
Active to Precharge Command Period
Min.
tRC
Active to Ref/Active Command Period
Min.
IDD0
Operating Current: One Bank Active-Precharge
Max.
IDD1
Operating Current: One Bank Active-Read-Precharge
Max.
IDD4R
Burst Operation Read Current
Max.
IDD4W
Burst Operation Write Current
Max.
IDD5
Auto Refresh Current
Max.
IDD6
Self Refresh Current
Max.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 6 - Revision A03
5. BALL CONFIGURATION
A
B
C
D
E
F
G
H
J
K
L
M
VSSQ VDDQ
DQ14
DQ12
DQ10
DQ8
VREF
DQ15 VSS
VDDQ
VSSQ
VDDQ
VSSQ
VSS
CLK
A12
A11
A8
A6
A4
DQ13
DQ11
DQ9
UDQS
UDM
CLK
CKE
A9
A7
A5
VSS
DQ1
DQ3
DQ5
DQ7
NC
DQ0VDD
DQ2
DQ4
DQ6
LDQS
LDM
WE
RAS
BA1
A0
A2
VDD A3
A1
A10/AP
BA0
CS
CAS
VDD
VDDQ
VSSQ
VDDQ
VSSQ
1 2 3 7 8 9 : Ball Existing
: Depopulated Ball
Top View (See the balls through the Package)
0.8 mm
8.0 mm
13.0 mm
1.0 mm
1 2 3 4 5 6 7 8 9
A
B
C
D
E
F
G
H
J
K
L
M
BGA Package Ball Pattern Top View
Device Ball Pattern
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 7 - Revision A03
6. BALL DESCRIPTION
BALL NUMBER
SYMBOL
FUNCTION
DESCRIPTION
K7, L8, L7, M8,
M2, L3, L2, K3,
K2, J3, K8, J2, H2
A0 A12
Address
Multiplexed pins for row and column address.
Row address: A0A12. Column address: A0A8.
Provide the row address for Bank Activate commands, and
the column address and Auto-precharge bit (A10) for
Read/Write commands, to select one location out of the
memory array in the respective bank. A10 is sampled during
a precharge command to determine whether the precharge
applies to one bank (A10 Low) or all banks (A10 High). If
only one bank is to be precharged, the bank is selected by
BA0, BA1. The address inputs also provide the op-code
during a Mode Register Set command. BA0 and BA1 define
which mode register is loaded during the Mode Register Set
command (MRS or EMRS).
J8, J7
BA0, BA1
Bank Select
Select bank to activate during row address latch time, or
bank to read/write during column address latch time.
A8, B9, B7, C9,
C7, D9, D7, E9,
E1, D3, D1, C3,
C1, B3, B1, A2
DQ0
DQ15
Data Input/ Output
The DQ0 – DQ15 input and output data are synchronized
with both edges of DQS.
E7, E3
LDQS,
UDQS
Data Strobe
DQS is Bi-directional signal. DQS is input signal during write
operation and output signal during read operation. It is Edge-
aligned with read data, Center-aligned with write data.
H8
CS
Chip Select
Disable or enable the command decoder. When command
decoder is disabled, new command is ignored and previous
operation continues.
H7, G8, G7
RAS
,
CAS
,
WE
Command Inputs
Command inputs (along with
CS
) define the command
being entered.
F7, F3
LDM, UDM
Write Mask
When DM is asserted “high” in burst write, the input data is
masked. DM is synchronized with both edges of DQS.
G2, G3
CLK,
CLK
Differential Clock
Inputs
All address and control input signals are sampled on the
crossing of the positive edge of CLK and negative edge of
CLK
.
H3
CKE
Clock Enable
CKE controls the clock activation and deactivation. When
CKE is low, Power Down mode, Suspend mode, or Self
Refresh mode is entered.
F1
VREF
Reference Voltage
VREF is reference voltage for inputs.
F8, M7, A7
VDD
Power (+2.5V)
Power for logic circuit inside DDR SDRAM.
A3, F2, M3
VSS
Ground
Ground for logic circuit inside DDR SDRAM.
B2, D2, C8, E8,
A9
VDDQ
Power (+2.5V) for
I/O Buffer
Separated power from VDD, used for output buffer, to
improve noise.
A1, C2, E2, B8,
D8
VSSQ
Ground for I/O
Buffer
Separated ground from VSS, used for output buffer, to
improve noise.
F9
NC
No Connection
No connection
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 8 - Revision A03
7. BLOCK DIAGRAM
CKE
A10
DLL
CLOCK
BUFFER
COMMAND
DECODER
ADDRESS
BUFFER
REFRESH
COUNTER
COLUMN
COUNTER
CONTROL
SIGNAL
GENERATOR
MODE
REGISTER
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #2
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #0
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #3
DATA CONTROL
CIRCUIT
DQ
BUFFER
COLUMN DECODER
SENSE AMPLIFIER
CELL ARRAY
BANK #1
NOTE: The cell array configuration is 8192 * 512 * 16
ROW DECODER ROW DECODER
ROW DECODER
ROW DECODER
A0
A9
A11
A12
BA1
BA0
CS
RAS
CAS
WE
CLK
CLK
DQ0
DQ15
PREFETCH REGISTER
LDM
UDM
UDQS
LDQS
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 9 - Revision A03
8. FUNCTIONAL DESCRIPTION
8.1 Power Up Sequence
(1) Apply power and attempt to CKE at a low state (
0.2V), all other inputs may be undefined
1) Apply VDD before or at the same time as VDDQ.
2) Apply VDDQ before or at the same time as VTT and VREF.
(2) Start Clock and maintain stable condition for 200 µS (min.).
(3) After stable power and clock, apply NOP and take CKE high.
(4) Issue precharge command for all banks of the device.
(5) Issue EMRS (Extended Mode Register Set) to enable DLL and establish Output Driver Type.
(6) Issue MRS (Mode Register Set) to reset DLL and set device to idle with bit A8.
(An additional 200 cycles(min) of clock are required for DLL Lock before any executable
command applied.)
(7) Issue precharge command for all banks of the device.
(8) Issue two or more Auto Refresh commands.
(9) Issue MRS-Initialize device operation with the reset DLL bit deactivated A8 to low.
2 Clock min. tRFC
MRS
CLK
Command ANY
CMD
AREFAREFPREAMRSEMRSPREA
CLK
tRFC
tRP
tRP
Enable DLL DLL reset with A8 = High Disable DLL reset with A8 = Low
200 Clock min.
2 Clock min. 2 Clock min.
Inputs
maintain stable
for 200 µS min.
Initialization sequence after power-up
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 10 - Revision A03
8.2 Command Function
8.2.1 Bank Activate Command
(
RAS
= "L",
CAS
= "H",
WE
= "H", BA0, BA1 = Bank, A0 to A12 = Row Address)
The Bank Activate command activates the bank designated by the BA (Bank address) signal. Row
addresses are latched on A0 to A12 when this command is issued and the cell data is read out of
the sense amplifiers. The maximum time that each bank can be held in the active state is specified
as tRAS (max). After this command is issued, Read or Write operation can be executed.
8.2.2 Bank Precharge Command
(
RAS
= "L",
CAS
= "H",
WE
= "L", BA0, BA1 = Bank, A10 = "L", A0 to A9, A11, A12 = Don’t
Care)
The Bank Precharge command percharges the bank designated by BA. The precharged bank is
switched from the active state to the idle state.
8.2.3 Precharge All Command
(
RAS
= "L",
CAS
= "H",
WE
= "L", BA0, BA1 = Don’t Care, A10 = "H", A0 to A9, A11, A12 =
Don’t Care)
The Precharge All command precharges all banks simultaneously. Then all banks are switched to
the idle state.
8.2.4 Write Command
(
RAS
= "H",
CAS
= "L",
WE
= "L", BA0, BA1 = Bank, A10 = "L", A0 to A8 = Column Address)
The write command performs a Write operation to the bank designated by BA. The write data are
latched at both edges of DQS. The length of the write data (Burst Length) and column access
sequence (Addressing Mode) must be in the Mode Register at power-up prior to the Write
operation.
8.2.5 Write with Auto-precharge Command
(
RAS
= "H",
CAS
= "L",
WE
= "L", BA0, BA1 = Bank, A10 = "H", A0 to A8 = Column Address)
The Write with Auto-precharge command performs the Precharge operation automatically after the
Write operation. This command must not be interrupted by any other commands.
8.2.6 Read Command
(
RAS
= "H",
CAS
= "L",
WE
= "H", BA0, BA1 = Bank, A10 = "L", A0 to A8 = Column Address)
The Read command performs a Read operation to the bank designated by BA. The read data are
synchronized with both edges of DQS. The length of read data (Burst Length), Addressing Mode
and CAS Latency (access time from
CAS
command in a clock cycle) must be programmed in the
Mode Register at power-up prior to the Read operation.
8.2.7 Read with Auto-precharge Command
(
RAS
= "H",
CAS
= "L",
WE
= "H", BA0, BA1 = Bank, A10 = "H", A0 to A8 = Column Address)
The Read with Auto-precharge command automatically performs the Precharge operation after the
Read operation.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 11 - Revision A03
1) READA
tRAS (min) - (BL/2) x tCK
Internal precharge operation begins after BL/2 cycle from Read with Auto-precharge command.
2) tRCD(min)
READA < tRAS(min) - (BL/2) x tCK
Data can be read with shortest latency, but the internal Precharge operation does not begin until
after tRAS (min) has completed.
This command must not be interrupted by any other command.
8.2.8 Mode Register Set Command
(
RAS
= "L",
CAS
= "L",
WE
= "L", BA0 = "L", BA1 = "L", A0 to A12 = Register Data)
The Mode Register Set command programs the values of CAS Latency, Addressing Mode, Burst
Length and DLL reset in the Mode Register. The default values in the Mode Register after power-
up are undefined, therefore this command must be issued during the power-up sequence. Also,
this command can be issued while all banks are in the idle state. Refer to the table for specific
codes.
8.2.9 Extended Mode Register Set Command
(
RAS
= "L",
CAS
= "L",
WE
= "L", BA0 = "H", BA1 = "L", A0 to A12 = Register data)
The Extended Mode Register Set command can be implemented as needed for function
extensions to the standard (SDR-SDRAM). These additional functions include DLL enable/disable,
output drive strength selection. The default value of the extended mode register is not defined;
therefore this command must be issued during the power-up sequence for enabling DLL. Refer to
the table for specific codes.
8.2.10 No-Operation Command
(
RAS
= "H",
CAS
= "H",
WE
= "H")
The No-Operation command simply performs no operation (same command as Device Deselect).
8.2.11 Burst Read Stop Command
(
RAS
= "H",
CAS
= "H",
WE
= "L")
The Burst stop command is used to stop the burst operation. This command is only valid during a
Burst Read operation.
8.2.12 Device Deselect Command
(
CS
= "H")
The Device Deselect command disables the command decoder so that the
RAS
,
CAS
,
WE
and Address inputs are ignored. This command is similar to the No-Operation command.
8.2.13 Auto Refresh Command
(
RAS
= "L",
CAS
= "L",
WE
= "H", CKE = "H", BA0, BA1, A0 to A12 = Don’t Care)
AUTO REFRESH is used during normal operation of the DDR SDRAM and is analogous to CAS–
BEFORE–RAS (CBR) refresh in previous DRAM types. This command is non persistent, so it
must be issued each time a refresh is required.
The refresh addressing is generated by the internal refresh controller. This makes the address bits
“Don’t Care” during an AUTO REFRESH command. The DDR SDRAM requires AUTO REFRESH
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 12 - Revision A03
cycles at an average periodic interval of
tREFI (maximum). To allow for improved efficiency in scheduling and switching between tasks,
some flexibility in the absolute refresh interval is provided. A maximum of eight AUTO REFRESH
commands can be posted to any given DDR SDRAM, and the maximum absolute interval
between any AUTO REFRESH command and the next AUTO REFRESH command is 8 * tREFI.
8.2.14 Self Refresh Entry Command
(
RAS
= "L",
CAS
= "L",
WE
= "H", CKE = "L", BA0, BA1, A0 to A12 = Don’t Care)
The SELF REFRESH command can be used to retain data in the DDR SDRAM, even if the rest of
the system is powered down. When in the self refresh mode, the DDR SDRAM retains data
without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH
command except CKE is disabled (LOW). The DLL is automatically disabled upon entering SELF
REFRESH, and is automatically enabled upon exiting SELF REFRESH. Any time the DLL is
enabled a DLL Reset must follow and 200 clock cycles should occur before a READ command
can be issued. Input signals except CKE are “Don’t Care” during SELF REFRESH. Since CKE is a
SSTL_2 input, VREF must be maintained during SELF REFRESH.
8.2.15 Self Refresh Exit Command
(CKE = "H",
CS
= "H" or CKE = "H",
RAS
= "H",
CAS
= "H")
The procedure for exiting self refresh requires a sequence of commands. First, CLK must be
stable prior to CKE going back HIGH. Once CKE is HIGH, the DDR SDRAM must have NOP
commands issued for tXSNR because time is required for the completion of any internal refresh in
progress. A simple algorithm for meeting both refresh and DLL requirements is to apply NOPs for
200 clock cycles before applying any other command.
The use of SELF REFREH mode introduces the possibility that an internally timed event can be
missed when CKE is raised for exit from self refresh mode. Upon exit from SELF REFRESH an
extra auto refresh command is recommended.
8.2.16 Data Write Enable /Disable Command
(DM = "L/H" or LDM, UDM = "L/H")
During a Write cycle, the DM or LDM, UDM signal functions as Data Mask and can control every
word of the input data. The LDM signal controls DQ0 to DQ7 and UDM signal controls DQ8 to
DQ15.
8.3 Read Operation
Issuing the Bank Activate command to the idle bank puts it into the active state. When the Read
command is issued after tRCD from the Bank Activate command, the data is read out sequentially,
synchronized with both edges of DQS (Burst Read operation). The initial read data becomes
available after CAS Latency from the issuing of the Read command. The CAS Latency must be set
in the Mode Register at power-up.
When the Precharge Operation is performed on a bank during a Burst Read and operation, the
Burst operation is terminated.
When the Read with Auto-precharge command is issued, the Precharge operation is performed
automatically after the Read cycle then the bank is switched to the idle state. This command
cannot be interrupted by any other commands. Refer to the diagrams for Read operation.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 13 - Revision A03
8.4 Write Operation
Issuing the Write command after tRCD from the bank activate command. The input data is latched
sequentially, synchronizing with both edges(rising & falling) of DQS after the Write command
(Burst write operation). The burst length of the Write data (Burst Length) and Addressing Mode
must be set in the Mode Register at power-up.
When the Precharge operation is performed in a bank during a Burst Write operation, the Burst
operation is terminated.
When the Write with Auto-precharge command is issued, the Precharge operation is performed
automatically after the Write cycle, then the bank is switched to the idle state, The Write with Auto-
precharge command cannot be interrupted by any other command for the entire burst data
duration.
Refer to the diagrams for Write operation.
8.5 Precharge
There are two Commands, which perform the precharge operation (Bank Precharge and
Precharge All). When the Bank Precharge command is issued to the active bank, the bank is
precharged and then switched to the idle state. The Bank Precharge command can precharge one
bank independently of the other bank and hold the unprecharged bank in the active state. The
maximum time each bank can be held in the active state is specified as tRAS (max). Therefore, each
bank must be precharged within tRAS(max) from the bank activate command.
The Precharge All command can be used to precharge all banks simultaneously. Even if banks
are not in the active state, the Precharge All command can still be issued. In this case, the
Precharge operation is performed only for the active bank and the precharge bank is then
switched to the idle state.
8.6 Burst Termination
When the Precharge command is used for a bank in a Burst cycle, the Burst operation is
terminated. When Burst Read cycle is interrupted by the Precharge command, read operation is
disabled after clock cycle of (CAS Latency) from the Precharge command. When the Burst Write
cycle is interrupted by the Precharge command, the input circuit is reset at the same clock cycle at
which the precharge command is issued. In this case, the DM signal must be asserted "high"
during tWR to prevent writing the invalided data to the cell array.
When the Burst Read Stop command is issued for the bank in a Burst Read cycle, the Burst Read
operation is terminated. The Burst read Stop command is not supported during a write burst
operation. Refer to the diagrams for Burst termination.
8.7 Refresh Operation
Two types of Refresh operation can be performed on the device: Auto Refresh and Self Refresh.
By repeating the Auto Refresh cycle, each bank in turn refreshed automatically. The Refresh
operation must be performed 8192 times (rows) within 64mS. The period between the Auto
Refresh command and the next command is specified by tRFC.
Self Refresh mode enters issuing the Self Refresh command (CKE asserted "low") while all banks
are in the idle state. The device is in Self Refresh mode for as long as CKE held "low". In the case
of distributed Auto Refresh commands, distributed auto refresh commands must be issued every
7.8 µS and the last distributed Auto Refresh commands must be performed within 7.8 µS before
entering the self refresh mode. After exiting from the Self Refresh mode, the refresh operation
must be performed within 7.8 µS. In Self Refresh mode, all input/output buffers are disabled,
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 14 - Revision A03
resulting in lower power dissipation (except CKE buffer). Refer to the diagrams for Refresh
operation.
8.8 Power Down Mode
Two types of Power Down Mode can be performed on the device: Active Standby Power Down
Mode and Precharge Standby Power Down Mode.
When the device enters the Power Down Mode, all input/output buffers and DLL are disabled
resulting in low power dissipation (except CKE buffer).
Power Down Mode enter asserting CKE "low" while the device is not running a burst cycle. Taking
CKE "high" can exit this mode. When CKE goes high, a No operation command must be input at
next CLK rising edge. Refer to the diagrams for Power Down Mode.
8.9 Input Clock Frequency Change during Precharge Power Down Mode
DDR SDRAM input clock frequency can be changed under following condition:
DDR SDRAM must be in precharged power down mode with CKE at logic LOW level. After a
minimum of 2 clocks after CKE goes LOW, the clock frequency may change to any frequency
between minimum and maximum operating frequency specified for the particular speed grade.
During an input clock frequency change, CKE must be held LOW. Once the input clock frequency
is changed, a stable clock must be provided to DRAM before precharge power down mode may be
exited. The DLL must be RESET via EMRS after precharge power down exit. An additional MRS
command may need to be issued to appropriately set CL etc. After the DLL relock time, the DRAM
is ready to operate with new clock frequency.
8.10 Mode Register Operation
The mode register is programmed by the Mode Register Set command (MRS/EMRS) when all
banks are in the idle state. The data to be set in the Mode Register is transferred using the A0 to
A12 and BA0, BA1 address inputs.
The Mode Register designates the operation mode for the read or write cycle. The register is
divided into five filed: (1) Burst Length field to set the length of burst data (2) Addressing Mode
selected bit to designate the column access sequence in a Burst cycle (3) CAS Latency field to set
the assess time in clock cycle (4) DLL reset field to reset the DLL (5) Regular/Extended Mode
Register filed to select a type of MRS (Regular/Extended MRS). EMRS cycle can be implemented
the extended function (DLL enable/Disable mode).
The initial value of the Mode Register (including EMRS) after power up is undefined; therefore the
Mode Register Set command must be issued before power operation.
8.10.1 Burst Length field (A2 to A0)
This field specifies the data length for column access using the A2 to A0 pins and sets the Burst
Length to be 2, 4, and 8 words.
A2
A1
A0
BURST LENGTH
0
0
0
Reserved
0
0
1
2 words
0
1
0
4 words
0
1
1
8 words
1
x
x
Reserved
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 15 - Revision A03
8.10.2 Addressing Mode Select (A3)
The Addressing Mode can be one of two modes; Interleave mode or Sequential Mode, When the
A3 bit is "0", Sequential mode is selected. When the A3 bit is "1", Interleave mode is selected. Both
addressing Mode support burst length 2, 4, and 8 words.
A3
ADDRESSING MODE
0
Sequential
1
Interleave
8.10.2.1. Addressing Sequence of Sequential Mode
A column access is performed by incrementing the column address input to the device. The
address is varied by the Burst Length as the following.
Addressing Sequence of Sequential Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
n
2 words (address bits is A0)
Data 1
n + 1
not carried from A0 to A1
Data 2
n + 2
4 words (address bit A0, A1)
Data 3
n + 3
Not carried from A1 to A2
Data 4
n + 4
Data 5
n + 5
8 words (address bits A2, A1 and A0)
Data 6
n + 6
Not carried from A2 to A3
Data 7
n + 7
8.10.2.2. Addressing Sequence for Interleave Mode
A Column access is started from the inputted column address and is performed by interleaving the
address bits in the sequence shown as the following.
Addressing Sequence of Interleave Mode
DATA
ACCESS ADDRESS
BURST LENGTH
Data 0
A8 A7 A6 A5 A4 A3 A2 A1 A0
2 words
Data 1
A8 A7 A6 A5 A4 A3 A2 A1
A0
Data 2
A8 A7 A6 A5 A4 A3 A2
A1
A0
4 words
Data 3
A8 A7 A6 A5 A4 A3 A2
A1
A0
Data 4
A8 A7 A6 A5 A4 A3
A2
A1 A0
8 words
Data 5
A8 A7 A6 A5 A4 A3
A2
A1
A0
Data 6
A8 A7 A6 A5 A4 A3
A2
A1
A0
Data 7
A8 A7 A6 A5 A4 A3
A2
A1
A0
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 16 - Revision A03
8.10.3 CAS Latency field (A6 to A4)
This field specifies the number of clock cycles from the assertion of the Read command to the first
data read. The minimum values of CAS Latency depend on the frequency of CLK.
A6
A5
A4
CAS LATENCY
0
0
0
Reserved
0
0
1
Reserved
0
1
0
2
0
1
1
3
1
0
0
Reserved
1
0
1
Reserved
1
1
0
2.5
1
1
1
Reserved
8.10.4 DLL Reset bit (A8)
This bit is used to reset DLL. When the A8 bit is "1", DLL is reset.
8.10.5 Mode Register /Extended Mode register change bits (BA0, BA1)
These bits are used to select MRS/EMRS.
BA1
BA0
A12-A0
0
0
Regular MRS Cycle
0
1
Extended MRS Cycle
1
x
Reserved
8.10.6 Extended Mode Register field
1) DLL Switch field (A0)
This bit is used to select DLL enable or disable
A0
DLL
0
Enable
1
Disable
2) Output Driver Size Control field (A6, A1)
The 100%, 60% and 30% or matched impedance driver strength are required Extended Mode
Register Set (EMRS) as the following:
A6
A1
BUFFER STRENGTH
0
0
100% Strength
0
1
60% Strength
1
0
Reserved
1
1
30% Strength
8.10.7 Reserved field
Test mode entry bit (A7)
This bit is used to enter Test mode and must be set to "0" for normal operation.
Reserved bits (A9, A10, A11, A12)
These bits are reserved for future operations. They must be set to "0" for normal operation.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 17 - Revision A03
9. OPERATION MODE
The following table shows the operation commands.
9.1 Simplified Truth Table
SYM.
COMMAND
DEVICE
STATE
CKEn-1
CKEn
DM(4)
BA0,
BA1
A10
A12,
A11,
A9-A0
CS
RAS
CAS
WE
ACT
Bank Active
Idle(3)
H
X
X
V
V
V
L
L
H
H
PRE
Bank Precharge
Any(3)
H
X
X
V
L
X
L
L
H
L
PREA
Precharge All
Any
H
X
X
X
H
X
L
L
H
L
WRIT
Write
Active(3)
H
X
X
V
L
V
L
H
L
L
WRITA
Write with Auto-
precharge
Active(3)
H
X
X
V
H
V
L
H
L
L
READ
Read
Active(3)
H
X
X
V
L
V
L
H
L
H
READA
Read with Auto-
precharge
Active(3)
H
X
X
V
H
V
L
H
L
H
MRS
Mode Register Set
Idle
H
X
X
L, L
Op-Code(6)
L
L
L
L
EMRS
Extended Mode
Register Set
Idle
H
X
X
H, L
L
L
L
L
NOP
No Operation
Any
H
X
X
X
X
X
L
H
H
H
BST
Burst Read Stop
Active
H
X
X
X
X
X
L
H
H
L
DSL
Device Deselect
Any
H
X
X
X
X
X
H
X
X
X
AREF
Auto Refresh
Idle
H
H
X
X
X
X
L
L
L
H
SELF
Self Refresh Entry
Idle
H
L
X
X
X
X
L
L
L
H
SELEX
Self Refresh Exit
Idle (Self
Refresh)
L
H
X
X
X
X
H
X
X
X
L
H
H
X
PD
Power Down
Mode Entry
Idle/
Active(5)
H
L
X
X
X
X
H
X
X
X
L
H
H
X
PDEX
Power Down
Mode Exit
Any (Power
Down)
L
H
X
X
X
X
H
X
X
X
L
H
H
X
WDE
Data Write Enable
Active
H
X
L
X
X
X
X
X
X
X
WDD
Data Write Disable
Active
H
X
H
X
X
X
X
X
X
X
Notes
1. V = Valid X = Don’t Care L = Low level H = High level.
2. CKEn signal is input level when commands are issued
CKEn-1 signal is input level one clock cycle before the commands are issued
3. These are state designated by the BA0, BA1 signals.
4. LDM, UDM (W9425G6JB)
5. Power Down Mode can not entry in the burst cycle.
6. BA0, BA1 select either the Base or the Extended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 =
0 selects Extended Mode Register; other combinations of BA0, BA1 are reserved; A0~A12 provide the op-code to be written
to the selected Mode Register (MRS or EMRS).
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 18 - Revision A03
9.2 Function Truth Table
(Note 1)
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
Idle
H
X
X
X
X
DSL
NOP
L
H
H
X
X
NOP/BST
NOP
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
Row activating
L
L
H
L
BA, A10
PRE/PREA
NOP
L
L
L
H
X
AREF/SELF
Refresh or Self refresh
2
L
L
L
L
Op-Code
MRS/EMRS
Mode register accessing
2
Row Active
H
X
X
X
X
DSL
NOP
L
H
H
X
X
NOP/BST
NOP
L
H
L
H
BA, CA, A10
READ/READA
Begin read: Determine AP
4
L
H
L
L
BA, CA, A10
WRIT/WRITA
Begin write: Determine AP
4
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
Precharge
5
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Read
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
Burst stop
L
H
L
H
BA, CA, A10
READ/READA
Term burst, new read: Determine AP
6
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
Term burst, precharging
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Write
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
Term burst, start read: Determine AP
6, 7
L
H
L
L
BA, CA, A10
WRIT/WRITA
Term burst, start read: Determine AP
6
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
Term burst, precharging
8
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 19 - Revision A03
Function Truth Table, continued
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
Read with
Auto-
precharge
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Write with
Auto-
precharge
H
X
X
X
X
DSL
Continue burst to end
L
H
H
H
X
NOP
Continue burst to end
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Precharging
H
X
X
X
X
DSL
NOP-> Idle after tRP
L
H
H
H
X
NOP
NOP-> Idle after tRP
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
Idle after tRP
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Row
Activating
H
X
X
X
X
DSL
NOP-> Row active after tRCD
L
H
H
H
X
NOP
NOP-> Row active after tRCD
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 20 - Revision A03
Function Truth Table, continued
CURRENT
STATE
CS
RAS
CAS
WE
ADDRESS
COMMAND
ACTION
NOTES
Write
Recovering
H
X
X
X
X
DSL
NOP->Row active after tWR
L
H
H
H
X
NOP
NOP->Row active after tWR
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Write
Recovering
with Auto-
precharge
H
X
X
X
X
DSL
NOP->Enter precharge after tWR
L
H
H
H
X
NOP
NOP->Enter precharge after tWR
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
3
L
H
L
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
3
L
L
H
H
BA, RA
ACT
ILLEGAL
3
L
L
H
L
BA, A10
PRE/PREA
ILLEGAL
3
L
L
L
H
X
AREF/SELF
ILLEGAL
L
L
L
L
Op-Code
MRS/EMRS
ILLEGAL
Refreshing
H
X
X
X
X
DSL
NOP->Idle after tRC
L
H
H
H
X
NOP
NOP->Idle after tRC
L
H
H
L
X
BST
ILLEGAL
L
H
L
H
X
READ/WRIT
ILLEGAL
L
L
H
X
X
ACT/PRE/PREA
ILLEGAL
L
L
L
X
X
AREF/SELF/MRS/EMRS
ILLEGAL
Mode
Register
Accessing
H
X
X
X
X
DSL
NOP->Row after tMRD
L
H
H
H
X
NOP
NOP->Row after tMRD
L
H
H
L
X
BST
ILLEGAL
L
H
L
X
X
READ/WRIT
ILLEGAL
L
L
X
X
X
ACT/PRE/PREA/ARE
F/SELF/MRS/EMRS
ILLEGAL
Notes
1. All entries assume that CKE was active (High level) during the preceding clock cycle and the current clock cycle.
2. Illegal if any bank is not idle.
3. Illegal to bank in specified states; Function may be legal in the bank indicated by Bank Address (BA), depending on the
state of that bank.
4. Illegal if tRCD is not satisfied.
5. Illegal if tRAS is not satisfied.
6. Must satisfy burst interrupt condition.
7. Must avoid bus contention, bus turn around, and/or satisfy write recovery requirements.
8. Must mask preceding data which don’t satisfy tWR
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 21 - Revision A03
9.3 Function Truth Table for CKE
CURRENT
STATE
CKE
CS
RAS
CAS
WE
ADDRESS
ACTION
NOTES
n-1
n
Self Refresh
H
X
X
X
X
X
X
INVALID
L
H
H
X
X
X
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
H
X
X
Exit Self Refresh->Idle after tXSNR
L
H
L
H
L
X
X
ILLEGAL
L
H
L
L
X
X
X
ILLEGAL
L
L
X
X
X
X
X
Maintain Self Refresh
Power Down
H
X
X
X
X
X
X
INVALID
L
H
X
X
X
X
X
Exit Power down->Idle after tIS
L
L
X
X
X
X
X
Maintain power down mode
All banks Idle
H
H
X
X
X
X
X
Refer to Function Truth Table
H
L
H
X
X
X
X
Enter Power down
2
H
L
L
H
H
X
X
Enter Power down
2
H
L
L
L
L
H
X
Self Refresh
1
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
L
X
X
X
X
X
X
Power down
Row Active
H
H
X
X
X
X
X
Refer to Function Truth Table
H
L
H
X
X
X
X
Enter Power down
3
H
L
L
H
H
X
X
Enter Power down
3
H
L
L
L
L
H
X
ILLEGAL
H
L
L
H
L
X
X
ILLEGAL
H
L
L
L
X
X
X
ILLEGAL
L
X
X
X
X
X
X
Power down
Any State
Other Than
Listed Above
H
H
X
X
X
X
X
Refer to Function Truth Table
Notes
1. Self refresh can enter only from the all banks idle state.
2. Power Down occurs when all banks are idle; this mode is referred to as precharge power down.
3. Power Down occurs when there is a row active in any bank; this mode is referred to as active power down.
Remark: H = High level, L = Low level, X = High or Low level (Don’t care), V = Valid data
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 22 - Revision A03
9.4 Simplified Stated Diagram
POWER
APPLIED
Automatic Sequence
Com mand Sequence
Read A
Write Read
ROW
ACTIVE
POWER
DOWN
IDLE
MODE
REGISTER
SET
AUTO
REFRESH
SELF
REFRESH
Read
Read A
Write
Write A
PRE
CHARGE
POWER
ON
MRS/EMRS AREF
SREF
SREFX
PD
PDEX
ACT
BST
Read
Write
Write A Write A Read A
PRE
PRE
PRE
PRE
ACTIVE
POWERDOWN
PD
PDEX
Read
Read A
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 23 - Revision A03
10. ELECTRICAL CHARACTERISTICS
10.1 Absolute Maximum Ratings
PARAMETER
SYMBOL
RATING
UNIT
Voltage on I/O Pins Relative to VSS
VIN, VOUT
-0.5 ~ VDDQ +0.5
V
Voltage on Input Pins Relative to VSS
VIN
-1 ~ 3.6
V
Voltage on VDD Supply Relative to VSS
VDD
-1 ~ 3.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
-1 ~ 3.6
V
Operating Temperature (-5)
TOPR
0 ~ 70
°C
Operating Temperature (-5I)
TOPR
-40 ~ 85
°C
Storage Temperature
TSTG
-55 ~ 150
°C
Soldering Temperature (10s)
TSOLDER
260
°C
Power Dissipation
PD
1
W
Short Circuit Output Current
IOUT
50
mA
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
10.2 Recommended DC Operating Conditions
(TA = 0 to 70°C for -5, TA = -40 to 85°C for -5I)
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
NOTES
VDD
Supply Voltage
2.3
2.5
2.7
V
2
VDDQ
Supply Voltage for I/O Buffer
2.3
2.5
2.7
V
2
VREF
Input reference Voltage
0.49 x VDDQ
0.50 x VDDQ
0.51 x VDDQ
V
2, 3
VTT
Termination Voltage (System)
VREF - 0.04
VREF
VREF + 0.04
V
2, 8
VIH (DC)
Input High Voltage (DC)
VREF + 0.15
-
VDDQ + 0.3
V
2
VIL (DC)
Input Low Voltage (DC)
-0.3
-
VREF - 0.15
V
2
VICK (DC)
Differential Clock DC Input Voltage
-0.3
-
VDDQ + 0.3
V
15
VID (DC)
Input Differential Voltage.
CLK and
CLK
inputs (DC)
0.36
-
VDDQ + 0.6
V
13, 15
VIH (AC)
Input High Voltage (AC)
VREF + 0.31
-
-
V
2
VIL (AC)
Input Low Voltage (AC)
-
-
VREF - 0.31
V
2
VID (AC)
Input Differential Voltage.
CLK and
CLK
inputs (AC)
0.7
-
VDDQ + 0.6
V
13, 15
VX (AC)
Differential AC input Cross Point
Voltage
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
12, 15
VISO (AC)
Differential Clock AC Middle Point
VDDQ/2 - 0.2
-
VDDQ/2 + 0.2
V
14, 15
Notes: Undershoot Limit: VIL (min) = -1.5V with a pulse width < 5 nS
Overshoot Limit: VIH (max) = VDDQ +1.5V with a pulse width < 5 nS
VIH (DC) and VIL (DC) are levels to maintain the current logic state.
VIH (AC) and VIL (AC) are levels to change to the new logic state.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 24 - Revision A03
10.3 Capacitance
(VDD = VDDQ = 2.5V 0.2V, f = 1 MHz, TA = 25°C, VOUT (DC) = VDDQ/2, VOUT (Peak to Peak) = 0.2V)
SYMBOL
PARAMETER
MIN.
MAX.
DELTA
(MAX.)
UNIT
CIN
Input Capacitance (except for CLK pins)
1.5
2.5
0.5
pF
CCLK
Input Capacitance (CLK pins)
1.5
2.5
0.25
pF
CI/O
DQ, DQS, DM Capacitance
3.5
4.5
0.5
pF
Note: These parameters are periodically sampled and not 100% tested.
10.4 Leakage and Output Buffer Characteristics
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
NOTES
II (L)
Input Leakage Current
Any input 0V < VIN < VDD, VREF Pin 0V < VIN <
1.35V (All other pins not under test = 0V)
-2
2
µA
IO (L)
Output Leakage Current
(Output disabled, 0V < VOUT < VDDQ)
-5
5
µA
VOH
Output High Voltage
(under AC test load condition)
VTT +0.76
-
V
VOL
Output Low Voltage
(under AC test load condition)
-
VTT -0.76
V
IOH
Output Levels: Full drive option
High Current
(VOUT = VDDQ - 0.373V, min. VREF, min. VTT
-15
-
mA
4, 6
IOL
Low Current
(VOUT = 0.373V, max. VREF, max. VTT)
15
-
mA
4, 6
IOHR
Output Levels: Reduced drive option - 60%
High Current
(VOUT = VDDQ - 0.763V, min. VREF, min. VTT
-9
-
mA
5
IOLR
Low Current
(VOUT = 0.763V, max. VREF, max. VTT)
9
-
mA
5
IOHR(30)
Output Levels: Reduced drive option - 30%
High Current
(VOUT = VDDQ – 1.056V, min. VREF, min. VTT
-4.5
-
mA
5
IOLR(30)
Low Current
(VOUT = 1.056V, max. VREF, max. VTT)
4.5
-
mA
5
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 25 - Revision A03
10.5 DC Characteristics
SYM.
PARAMETER
MAX.
UNIT
NOTES
-5/-5I
IDD0
Operating current: One Bank Active-Precharge;
tRC = tRC min; tCK = tCK min;
DQ, DM and DQS inputs changing once per clock cycle;
Address and control inputs changing once every two clock cycles
65
mA
7
IDD1
Operating current: One Bank Active-Read-Precharge;
Burst = 4; tRC = tRC min; CL = 3; tCK = tCK min; IOUT = 0 mA;
Address and control inputs changing once per clock cycle
80
7, 9
IDD2P
Precharge Power Down standby current:
All Banks Idle; Power down mode;
CKE < VIL max; tCK = tCK min; Vin = (0.5 x VDDQ) for DQ, DQS and DM
5
IDD2F
Idle floating standby current:
CS
> VIH min; All Banks Idle; CKE > VIH min; tCK = tCK min;
Address and other control inputs changing once per clock cycle;
Vin = (0.5 x VDDQ) for DQ, DQS and DM
20
7
IDD2N
Idle standby current:
CS
> VIH min; All Banks Idle; CKE > VIH min; tCK = tCK min;
Address and other control inputs changing once per clock cycle;
Vin > VIH min or Vin < VIL max for DQ, DQS and DM
20
7
IDD2Q
Idle quiet standby current:
CS
> VIH min; All Banks Idle; CKE > VIH min; tCK = tCK min;
Address and other control inputs stable;
Vin = (0.5 x VDDQ) for DQ, DQS and DM
20
7
IDD3P
Active Power Down standby current:
One Bank Active; Power down mode;
CKE < VIL max; tCK = tCK min;
Vin = (0.5 x VDDQ) for DQ, DQS and DM
20
IDD3N
Active standby current:
CS
> VIH min; CKE > VIH min; One Bank Active-Precharge;
tRC = tRAS max; tCK = tCK min;
DQ, DM and DQS inputs changing twice per clock cycle;
Address and other control inputs changing once per clock cycle
30
7
IDD4R
Operating current:
Burst = 2; Reads; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL=2; tCK = tCK min; IOUT = 0mA
120
7, 9
IDD4W
Operating current:
Burst = 2; Writes; Continuous burst; One Bank Active;
Address and control inputs changing once per clock cycle;
CL = 2; tCK = tCK min;
DQ, DM and DQS inputs changing twice per clock cycle
115
7
IDD5
Auto Refresh current: tRC = tRFC min
65
7
IDD6
Self Refresh current: CKE < 0.2V; external clock on; tCK = tCK min
2
IDD7
Random Read current: 4 Banks Active Read with activate every 20nS,
Auto-Precharge Read every 20 nS;
Burst = 4; tRCD = 3; IOUT = 0mA;
DQ, DM and DQS inputs changing twice per clock cycle;
Address changing once per clock cycle
175
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 26 - Revision A03
10.6 AC Characteristics and Operating Condition
SYM.
PARAMETER
-5/-5I
UNIT
NOTES
MIN.
MAX.
tRC
Active to Ref/Active Command Period
55
nS
tRFC
Ref to Ref/Active Command Period
70
tRAS
Active to Precharge Command Period
40
70000
tRCD
Active to Read/Write Command Delay Time
15
tRAP
Active to Read with Auto-precharge Enable
15
tCCD
Read/Write(a) to Read/Write(b) Command Period
1
tCK
tRP
Precharge to Active Command Period
15
nS
tRRD
Active(a) to Active(b) Command Period
10
tWR
Write Recovery Time
15
tDAL
Auto-precharge Write Recovery + Precharge Time
(tWR/tCK) +
(tRP/tCK)
tCK
18
tCK
CLK Cycle Time
CL = 2
7.5
12
nS
CL = 2.5
6
12
CL = 3
5
12
tAC
Data Access Time from CLK,
CLK
-0.7
0.7
16
tDQSCK
DQS Output Access Time from CLK,
CLK
-0.6
0.6
16
tDQSQ
Data Strobe Edge to Output Data Edge Skew
0.4
tCH
CLk High Level Width
0.45
0.55
tCK
11
tCL
CLK Low Level Width
0.45
0.55
11
tHP
CLK Half Period (minimum of actual tCH, tCL)
Min. (tCL,tCH)
nS
tQH
DQ Output Data Hold Time from DQS
tHP-0.5
tRPRE
DQS Read Preamble Time
0.9
1.1
tCK
11
tRPST
DQS Read Postamble Time
0.4
0.6
11
tDS
DQ and DM Setup Time
0.4
nS
tDH
DQ and DM Hold Time
0.4
tDIPW
DQ and DM Input Pulse Width (for each input)
1.75
tDQSH
DQS Input High Pulse Width
0.35
tCK
11
tDQSL
DQS Input Low Pulse Width
0.35
11
tDSS
DQS Falling Edge to CLK Setup Time
0.2
11
tDSH
DQS Falling Edge Hold Time from CLK
0.2
11
tWPRES
Clock to DQS Write Preamble Set-up Time
0
nS
tWPRE
DQS Write Preamble Time
0.25
tCK
11
tWPST
DQS Write Postamble Time
0.4
0.6
11
tDQSS
Write Command to First DQS Latching Transition
0.72
1.25
11
tIS
Input Setup Time (fast slew rate)
0.6
nS
19, 21-23
tIH
Input Hold Time (fast slew rate)
0.6
19, 21-23
tIS
Input Setup Time (slow slew rate)
0.7
20-23
tIH
Input Hold Time (slow slew rate)
0.7
20-23
tIPW
Control & Address Input Pulse Width (for each input)
2.2
tHZ
Data-out High-impedance Time from CLK,
CLK
0.7
tLZ
Data-out Low-impedance Time from CLK,
CLK
-0.7
0.7
tT(SS)
SSTL Input Transition
0.5
1.5
tWTR
Internal Write to Read Command Delay
2
tCK
tXSNR
Exit Self Refresh to non-Read Command
75
nS
tXSRD
Exit Self Refresh to Read Command
200
tCK
tREFI
Refresh Time (8k/64mS)
7.8
µS
17
tMRD
Mode Register Set Cycle Time
10
nS
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 27 - Revision A03
10.7 AC Test Conditions
PARAMETER
SYMBOL
VALUE
UNIT
Input High Voltage (AC)
VIH
VREF + 0.31
V
Input Low Voltage (AC)
VIL
VREF - 0.31
V
Input Reference Voltage
VREF
0.5 x VDDQ
V
Termination Voltage
VTT
0.5 x VDDQ
V
Differential Clock Input Reference Voltage
VR
Vx (AC)
V
Input Difference Voltage. CLK and
CLK
Inputs (AC)
VID (AC)
1.5
V
Output Timing Measurement Reference Voltage
VOTR
0.5 x VDDQ
V
V SWING (MAX)
VDDQ
VSS
TT
VIH min (AC)
VREF
VIL max (AC)
SLEW = (VIH min (AC) - VILmax (AC)) / T
Output
50 Ω
VTT
Timing Reference Load
Output
V(out) 30pF
Notes:
(1) Conditions outside the limits listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
(2) All voltages are referenced to VSS, VSSQ.
(3) Peak to peak AC noise on VREF may not exceed 2% VREF(DC).
(4) VOH = 1.95V, VOL = 0.35V
(5) VOH = 1.9V, VOL = 0.4V
(6) The values of IOH(DC) is based on VDDQ = 2.3V and VTT = 1.19V.
The values of IOL(DC) is based on VDDQ = 2.3V and VTT = 1.11V.
(7) These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values
of tCK and tRC.
(8) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors is expected to be set
equal to VREF and must track variations in the DC level of VREF.
(9) These parameters depend on the output loading. Specified values are obtained with the output open.
(10) Transition times are measured between VIH min(AC) and VIL max(AC).Transition (rise and fall) of input signals have a fixed
slope.
(11) IF the result of nominal calculation with regard to tCK contains more than one decimal place, the result is rounded up to
the nearest decimal place.
(i.e., tDQSS = 1.25 tCK, tCK = 5 nS, 1.25 5 nS = 6.25 nS is rounded up to 6.2 nS.)
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 28 - Revision A03
(12) VX is the differential clock cross point voltage where input timing measurement is referenced.
(13) VID is magnitude of the difference between CLK input level and
CLK
input level.
(14) VISO means {VICK(CLK)+VICK(
CLK
)}/2.
(15) Refer to the figure below.
CLK
CLK
VSS
VICK
VXVXVXVX
VX
VICK
VICK VICK VID(AC)
VID(AC)
0 V Differential
VISO
VISO(min) VISO(max)
VSS
(16) tAC and tDQSCK depend on the clock jitter. These timing are measured at stable clock.
(17) A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
(18) tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For -5 speed grade at CL=2.5 and tCK=6 nS
tDAL = ((15 nS / 6 nS) + (15 nS / 6 nS)) clocks = ((3) + (3)) clocks = 6 clocks
(19) For command/address input slew rate ≥1.0 V/nS.
(20) For command/address input slew rate ≥0.5 V/nS and <1.0 V/nS.
(21) For CLK &
CLK
slew rate ≥1.0 V/nS (single--ended).
(22) These parameters guarantee device timing, but they are not necessarily tested on each device. They may be
guaranteed by device design or tester correlation.
(23) Slew Rate is measured between VOH(ac) and VOL(ac).
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 29 - Revision A03
11. SYSTEM CHARACTERISTICS FOR DDR SDRAM
The following specification parameters are required in systems using DDR400 devices to ensure
proper system performance. These characteristics are for system simulation purposes and are
guaranteed by design.
11.1 Table 1: Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
SYMBOL
DDR400
UNIT
NOTES
PARAMETER
MIN.
MAX.
DQ/DM/DQS input slew rate
measured between VIH(DC),
VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
0.5
4.0
V/nS
a, k
11.2 Table 2: Input Setup & Hold Time Derating for Slew Rate
INPUT SLEW RATE
ΔtIS
ΔtIH
UNIT
NOTES
0.5 V/nS
0
0
pS
h
0.4 V/nS
+50
0
pS
h
0.3 V/nS
+100
0
pS
h
11.3 Table 3: Input/Output Setup & Hold Time Derating for Slew Rate
INPUT SLEW RATE
ΔtDS
ΔtDH
UNIT
NOTES
0.5 V/nS
0
0
pS
j
0.4 V/nS
+75
0
pS
j
0.3 V/nS
+150
0
pS
j
11.4 Table 4: Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
INPUT SLEW RATE
ΔtDS
ΔtDH
UNIT
NOTES
0.0 nS/V
0
0
pS
i
0.25 nS/V
+50
0
pS
i
0.5 nS/V
+100
0
pS
i
11.5 Table 5: Output Slew Rate Characteristics (X16 Devices only)
SLEW RATE
CHARACTERISTIC
TYPICAL
RANGE (V/nS)
MINIMUM
(V/nS)
MAXIMUM
(V/nS)
NOTES
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a, c, d, e, f, g
Pulldown Slew Rate
1.2 ~ 2.5
0.7
5.0
a, c, d, e, f, g
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 30 - Revision A03
11.6 System Notes:
a. Pullup slew rate is characterized under the test conditions as shown in Figure 1.
VSSQ
50Ω
Output
Test point
Figure 1: Pullup slew rate test load
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
VDDQ
50Ω
Output
Test point
Figure 2: Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV ± 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV ± 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs
switching and only one output switching.
Example: For typical slew rate, DQ0 is switching
For minimum slew rate, all DQ bits are switching worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high
The remaining DQ bits remain the same as for previous state
d. Evaluation conditions
Typical: 25C (T Ambient), VDDQ = nominal, typical process
Minimum: 70C (T Ambient), VDDQ = minimum, slow-slow process
Maximum: 0C (T Ambient), VDDQ = maximum, fast-fast process
e. Verified under typical conditions for qualification purposes.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 31 - Revision A03
f. TSOP II package devices only.
g. Only intended for operation up to 266 Mbps per pin.
h. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below
0.5 V/nS as shown in Table 2. The Input slew rate is based on the lesser of the slew rates
determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
i. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew
rates differ, as shown in Tables 3 & 4. Input slew rate is based on the larger of AC-AC delta rise,
fall rate and DC-DC delta rise, fall rate. Input slew rate is based on the lesser of the slew rates
determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)}-{1/(slew Rate2)}
For example: If Slew Rate 1 is 0.5 V/nS and Slew Rate 2 is 0.4 V/nS, then the delta rise, fall rate is
-0.5 nS/V. Using the table given, this would result in the need for an increase in tDS and tDH of 100
pS.
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/nS. The
I/O slew rate is based on the lesser of the AC-AC slew rate and the DC-DC slew rate. The input
slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC)
to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve
setup and hold times. Signal transitions through the DC region must be monotonic.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 32 - Revision A03
12. TIMING WAVEFORMS
12.1 Command Input Timing
CLK
CLK
tCK tCK tCLtCH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
tIS tIH
CS
RAS
CAS
WE
A0~A12
BA0,1
Refer to the Command Truth Table
12.2 Timing of the CLK Signals
tCK
tTtT
VIH
VIH(AC)
VIL(AC)
VIL
CLK
CLK
CLK
CLK
VX VX VX
VIH
VIL
tCH tCL
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 33 - Revision A03
12.3 Read Timing (Burst Length = 4)
tIS tIH
DA0 DA1 DA2
tCH tCL tCK
ADD
CMD
CLK
CLK
READ
Col
QA0 QA1 QA2 DA3
QA3
tRPRE tDQSCK
tDQSCK tDQSCK
tRPST
Postamble
Preamble
Hi-Z
Hi-Z
tDQSQ tDQSQ tDQSQ
tQH
tQH
tAC
tLZ
tHZ
Hi-Z
Hi-Z
DA0 DA1 DA2
QA0 QA1 QA2 DA3
QA3
tRPRE tDQSCK
tDQSCK tDQSCK
tRPST
Postamble
Preamble
Hi-Z
Hi-Z
tDQSQ tDQSQ tDQSQ
tQH
tQH
tAC
tLZ tHZ
Hi-Z
Hi-Z
CAS Latency = 2
DQS
Output
(Data)
CAS Latency = 3
DQS
Output
(Data)
tIS tIH
Notes: The correspondence of LDQS, UDQS to DQ. (W9425G6JB)
LDQS
DQ0~7
UDQS
DQ8~15
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 34 - Revision A03
12.4 Write Timing (Burst Length = 4)
tIS tIH tDSH tDSS tDSStDSH
tWPRES
tDHtDHtDH
tDS tDS tDS
tDQSS tDSH tDSHtDSS tDSS
Postamble
tWPRE
Preamble
tDQSH tDQSHtDQSL tWPST
DA0 DA1 DA2 DA3
tWPRES
tDS tDS
tDQSS
tDSH tDSHtDSS tDSS
Postamble
tWPRE
Preamble
tDQSH tDQSHtDQSL tWPST
tWPRES
tDH
tDS tDS
tDQSS
Postamble
tWPRE
Preamble
tDQSH tDQSHtDQSL tWPST
DA0 DA1 DA2 DA3
tDS
tDH tDH
tCH tCL tCK
DQS
Input
(Data)
LDQS
DQ0~7
UDQS
DQ8~15
x4, x8 device
x16 device
ADD
CMD
CLK
CLK
WRIT
Col
DA0 DA1 DA2 DA3
DA0 DA1 DA2 DA3
tDH
tDH
tDH
tDS
DA0 DA1 DA2 DA3
DA0 DA1 DA2 DA3
tIS tIH
Note: x16 has two DQSs (UDQS for upper byte and LDQS for lower byte). Even if one of the 2 bytes is not used, both UDQS
and LDQS must be toggled.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 35 - Revision A03
12.5 DM, DATA MASK (W9425G6JB)
WRIT
tDIPW
tDIPW
tDHtDHtDS
tDS
Masked
CLK
CMD
LDQS
LDM
DQ0~DQ7 D3D1D0
tDIPW
tDIPW
tDH
tDH
tDS
tDS
Masked
UDQS
UDM
DQ8~DQ15 D3D2
D0
CLK
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 36 - Revision A03
12.6 Mode Register Set (MRS) Timing
MRS
Register Set data
NEXT CMD
tMRD
CLK
CLK
CMD
ADD
A2 A1 A0
A3
A6 A5 A4
A8
BA1BA0
0 0 0
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
001
010
011
100
101
1 1 0
111
0
1
0
1
1
1
0
0
0
1
0
1
2
4
8
2
4
8
Burst Length
Sequential Interleaved
Reserved Reserved
Reserved
Reserved
Reserved
Reserved
Sequential
Interleaved
Addressing Mode
CAS Latency
2
DLL Reset
No
Yes
MRS or EMRS
Regular MRS cycle
Extended MRS cycle
2.5
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
BA0
BA1"0"
"0"
"0"
"0"
"0"
"0"
"0"
DLL Reset
Reserved
Addressing Mode
* "Reserved" should stay "0" during MRS cycle.
Reserved
Mode Register Set
or
Extended Mode
Register Set
CAS Latency
Burst Length
Reserved Reserved
3
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 37 - Revision A03
12.7 Extend Mode Register Set (EMRS) Timing
EMRS
Register Set data
NEXT CMD
tMRD
A0
BA1 BA0
0
1
0
1
0
1
Enable
Disable
DLL Switch
MRS or EMRS
Regular MRS cycle
Extended MRS cycle
A0
A1
A2
A3
A4
Buffer Strength
DLL Switch
Reserved
A6 A1
1
1
0
0
Buffer Strength
100% Strength
60% Strength
30% Strength
Reserved
Buffer Strength
Reserved
* “Reserved” should stay “0” during EMRS cycle
Mode Register Set
or
Extended Mode
Register Set
CMD
ADD
CLK
CLK
0
1
0
1
1
1
0
0
A5
A6
A7
A8
A9
A10
A11
BA0
BA1
"0"
"0"
"0"
"0"
"0"
"0"
"0"
"0"
"0"
"0"
"0"
"0"
A12
Reserved
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 38 - Revision A03
12.8 Auto-precharge Timing (Read Cycle, CL = 2)
1) tRCD (READA) tRAS (min) – (BL/2) tCK
AP
Q7Q6Q5Q4Q3Q2Q1Q0
ACT READA ACT
Q0 Q1 Q2 Q3
ACTREADAACT
Q0 Q1
ACT
AP
READAACT
tRP
tRAS
CMD
DQS
DQ
CMD
DQS
DQ
CMD
DQS
DQ
BL=2
BL=4
BL=8
CLK
CLK
AP
Notes: CL=2 shown; same command operation timing with CL = 2,5 and CL=3
In this case, the internal precharge operation begin after BL/2 cycle from READA command.
AP
Represents the start of internal precharging.
The Read with Auto-precharge command cannot be interrupted by any other command.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 39 - Revision A03
12.9 Auto-precharge Timing (Read cycle, CL = 2), continued
2) tRCD/RAP(min) tRCD (READA) tRAS (min) – (BL/2) tCK
AP
Q7Q6Q5Q4Q3Q2Q1Q0
ACT READA ACT
Q0 Q1 Q2 Q3
ACTREADAACT
Q0 Q1
ACT
AP
READAACT
tRP
tRAS
CMD
DQS
DQ
CMD
DQS
DQ
CMD
DQS
DQ
BL=2
BL=4
BL=8
CLK
CLK
AP
tRAP
tRCD
tRAP
tRCD
tRAP
tRCD
Notes: CL2 shown; same command operation timing with CL = 2.5, CL=3.
In this case, the internal precharge operation does not begin until after tRAS (min) has command.
AP
Represents the start of internal precharging.
The Read with Auto-precharge command cannot be interrupted by any other command.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 40 - Revision A03
12.10 Auto-precharge Timing (Write Cycle)
AP
ACT
ACTWRITA
ACTWRITA
CMD
DQS
DQ
CMD
DQS
DQ
CMD
DQS
DQ
BL=2
BL=4
BL=8
CLK
CLK
AP
AP
D0 D1
D0 D1 D2 D3
D0 D1 D2 D3 D4 D5 D6 D7
tDAL
tDAL
tDAL
WRITA
The Write with Auto-precharge command cannot be interrupted by any other command.
AP
Represents the start of internal precharging .
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 41 - Revision A03
12.11 Read Interrupted by Read (CL = 2, BL = 2, 4, 8)
CMD
ADD
DQS
CLK
CLK
DQ
ACT READ A READ B READ C READ D READ E
Row Address COl,Add,A Col,Add,B Col,Add,C Col,Add,D Col,Add,E
QC0QA0 QA1 QB0 QB1
tCCDtCCDtCCD
tCCDtRCD
12.12 Burst Read Stop (BL = 8)
READ
CMD
DQS
DQ
CLK
CLK
BST
Q0 Q1 Q2 Q3 Q4 Q5
Q0 Q1 Q2 Q3 Q4 Q5
CAS Latency
CAS Latency
CAS Latency = 2
DQS
DQ
CAS Latency = 3
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 42 - Revision A03
12.13 Read Interrupted by Write & BST (BL = 8)
READ
CMD
DQS
DQ
CLK
CLK
BST
Q0 Q1 Q2 Q3 Q4 Q5
CAS Latency = 2
WRIT
D0 D1 D2 D3 D4 D5 D6 D7
Burst Read cycle must be terminated by BST Command to avoid I/O conflict.
12.14 Read Interrupted by Precharge (BL = 8)
READ
CMD
DQS
DQ
CLK
CLK
PRE
Q0 Q1 Q2 Q3 Q4 Q5
Q0 Q1 Q2 Q3 Q4 Q5
CAS Latency
CAS Latency
CAS Latency = 2
DQS
DQ
CAS Latency = 3
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 43 - Revision A03
12.15 Write Interrupted by Write (BL = 2, 4, 8)
CMD
ADD
DQS
CLK
CLK
DQ
ACT WRIT A WRIT B WRIT C WRIT D WRIT E
Row
Address COl. Add. A Col.Add.B Col. Add. C Col. Add. D Col. Add. E
DC0 DC1 DD0 DD1DA0 DA1 DB0 DB1
tCCDtCCDtCCDtCCDtRCD
12.16 Write Interrupted by Read (CL = 2, BL = 8)
WRIT
CMD
DQS
DM
CLK
CLK
tWTR
DQ D4 D5 D6 D7D0 D1 D2 D3
Data must be
masked by DM
READ
Data masked by READ command,
DQS input ignored.
Q4 Q5 Q6 Q7Q0 Q1 Q2 Q3
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 44 - Revision A03
12.17 Write Interrupted by Read (CL = 3, BL = 4)
WRIT
CMD
DQS
DM
CLK
CLK
READ
tWTR
DQ Q0 Q1 Q2 Q3
D0 D1 D2 D3
Data must be masked by DM
12.18 Write Interrupted by Precharge (BL = 8)
WRIT
CMD
DQS
DM
CLK
CLK
ACT
tWR
DQ D4 D5 D6 D7D0 D1 D2 D3
Data must be
masked by DM
PRE
tRP
Data masked by PRE
command, DQS input ignored.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 45 - Revision A03
12.19 2 Bank Interleave Read Operation (CL = 2, BL = 2)
CMD
DQS
CLK
CLK
DQ Q0a Q1a Q0b Q1b
ACTa/b : Bank Act. CMD of bank a/b
READAa/b : Read with Auto Pre.CMD of bank a/b
APa/b : Auto Pre. of bank a/b
ACTa ACTb READAa ACTaREADAb ACTb
APa APb
tRCD(a)
tRAS(a) tRP(a)
tRAS(b)
tRCD(b) tRP(b)
CL(a) CL(b)
Preamble Postamble Preamble Postamble
tRRD
tRC(a) tRC(b)
tRRD
12.20 2 Bank Interleave Read Operation (CL = 2, BL = 4)
CMD
DQS
CLK
CLK
DQ Q2a Q3a Q2b Q3b
ACTa/b : Bank Act. CMD of bank a/b
READAa/b : Read with Auto Pre.CMD of bank a/b
APa/b : Auto Pre. of bank a/b
ACTa READAaACTb READAb ACTa ACTb
APa APb
tRCD(a)
tRAS(a) tRP(a)
tRAS(b)
tRCD(b) tRP(b)
CL(a) CL(b)
Preamble Postamble
tRRD
tRC(a)
tRC(b)
tRRD
Q0a Q1a Q0b Q1b
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 46 - Revision A03
12.21 4 Bank Interleave Read Operation (CL = 2, BL = 2)
CMD
DQS
CLK
CLK
DQ Q0a Q1a Q0b Q1b
ACTa/b/c/d : Bank Act. CMD of bank a/b/c/d
READAa/b/c/d : Read with Auto Pre.CMD of bank a/b/c/d
APa/b/c/d : Auto Pre. of bank a/b/c/d
ACTa ACTb READAaACTc READAbACTd READAcACTa
APa APb
tRCD(a)
tRAS(a) tRP
tRAS(b)
tRCD(b)
CL(a) CL(b)
Preamble Postamble Preamble
tRRD
tRC(a)
tRRD
tRAS(c)
tRAS(d)
tRCD(d)
tRCD(c)
tRRD tRRD
12.22 4 Bank Interleave Read Operation (CL = 2, BL = 4)
CMD
DQS
CLK
CLK
DQ
ACTa/b/c/d : Bank Act. CMD of bank a/b/c/d
READAa/b/c/d : Read with Auto Pre.CMD of bank a/b/c/d
APa/b/c/d : Auto Pre. of bank a/b/c/d
ACTa READAaACTb READAbACTc READAcACTd READAdACTa
APa APb
tRCD(a) tRAS(a) tRP(a)
tRAS(b)
tRCD(b)
CL(a) CL(b)
tRRD
tRC(a)
tRRD
tRAS(c)
tRAS(d)
tRCD(d)
tRCD(c)
tRRD tRRD
Q2a Q3a Q2b Q3b
Preamble
Q0a Q1a Q0b Q1bQ0a Q1a
CL(c)
APc
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 47 - Revision A03
12.23 Auto Refresh Cycle
CMD
CLK
CLK
PREA AREF AREF CMDNOP NOP NOP
tRP tRFC tRFC
Note: CKE has to be kept “High” level for Auto-Refresh cycle.
12.24 Precharged/Active Power Down Mode Entry and Exit Timing
CMD
CLK
CLK
NOP CMDNOP
Exit
Entry
CMD NOP
tIH tIS tCK tIH tIS
CKE
Precharge/Activate
Note 1,2
Note:
1. If power down occurs when all banks are idle, this mode is referred to as precharge power down.
2. If power down occurs when there is a row active in any bank, this mode is referred to as active power down.
12.25 Input Clock Frequency Change during Precharge Power Down Mode Timing
NOP NOP NOP DLL
RESET NOP NOP CMD
200 clocks
tIS
Frequency Change
Occurs here
Minmum 2 clocks
required before
changing frequency
Stable new clock
before power down exit
CLK
CLK
CMD
CKE
tRP
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 48 - Revision A03
12.26 Self Refresh Entry and Exit Timing
CMD
CLK
CLK
tIH tIS tIH tIS
SELF CMDSELEX NOPNOPPREA
Exit
Entry
CKE
tRP
tXSRD
NOPSELF
tXSNR
SELFX NOP ACT READ NOP
Exit
Entry
Note: If the clock frequency is changed during self refresh mode, a DLL reset is required upon exit.
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 49 - Revision A03
13. PACKAGE SPECIFICATION
Package Outline TFBGA 60 Ball (8x13 mm2, Ball pitch: 0.8mm, Φ=0.45mm)
B
A
60x Φb
D1
D
eE
E1 E
eD
CCCC
X’
X
A1 pin1 index A
CBall Land
Ball Opening
Note:
1. Ball Land: 0.5mm, Ball Opening : 0.4mm, PCB Ball Land Suggested ≤ 0.4mm
2. Solder Ball diameter refers to post reflew condition
REF. Dimension in mm
MIN. NOM. MAX.
A
A1
Φb
D
D1
E
E1
eD
eE
6.40 BSC
1.00 BSC
0.80 BSC
7.90 8.00 8.10
11.0 BSC
1.20
0.40
0.50
13.10
13.00
12.90
0.40
0.25 ---
---
---
---
Dimension in inch
MIN. NOM. MAX.
0.2519 BSC
0.0393 BSC
0.0314 BSC
0.3110 0.3149 0.3188
0.4330 BSC
0.0471
0.0157
0.0196
0.5157
0.5118
0.5078
0.0157
0.0098 ---
---
---
---
CCC 0.10
---
--- 0.0039
---
---
W9425G6JB
Publication Release Date: Oct. 04, 2012
- 50 - Revision A03
14. REVISION HISTORY
VERSION
DATE
PAGE
DESCRIPTION
A01
Oct. 08, 2010
All
Initial formally data sheet
A02
Oct. 05, 2011
4, 5, 23, 25, 26
Added -5I industrial grade parts
A03
Oct. 04, 2012
4
Added order information table
7
Added address and bank select inputs function
description in section 6 ball description table
17
Revise typo and added note of section 9.1
simplified truth table
49
Update TFBGA 60 ball package outline spec
Important Notice
Winbond products are not designed, intended, authorized or warranted for use as components
in systems or equipment intended for surgical implantation, atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal
instruments, combustion control instruments, or for other applications intended to support or
sustain life. Further more, Winbond products are not intended for applications wherein failure
of Winbond products could result or lead to a situation wherein personal injury, death or
severe property or environmental damage could occur.
Winbond customers using or selling these products for use in such applications do so at their
own risk and agree to fully indemnify Winbond for any damages resulting from such improper
use or sales.