HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 MICROELECTRONICS CORP. HIRF630 / HIRF630F HIRF630 Series Pin Assignment Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Description This power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. 1 2 Features 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source * Dynamic dv/dt Rating * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements 1 Thermal Characteristics Symbol Thermal Resistance Junction to Case Max. RJA Thermal Resistance Junction to Ambient Max. 2 3 HIRF630 Series Symbol Parameter RJC 3 Value Units TO-220AB 1.71 TO-220FP 3.3 62 D C/W G C/W S Absolute Maximum Ratings Symbol VDSS Parameter Drain-Source Voltage Value Units 200 V ID Drain to Current (Continuous) 9 A IDM Drain to Current (Pulsed) (*1) 36 A VGS Gate-to-Source Voltage (Continue) 30 V 74 38 W Derate above 25C TO-220AB TO-220FP 0.58 0.3 W/C EAS Single Pulse Avalanche Energy (*2) 250 mJ IAR Avalanche Current (*1) 9 A EAR Repetitive Avalanche Energy (*1) 7.4 mJ dv/dt Peak Diode Recovery o PD Total Power Dissipation (TC=25 C) TO-220AB TO-220FP 5 V/ns Operating Temperature Range -55 to 150 C Tstg Storage Temperature Range -55 to 150 C TL Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds 300 C Tj *1: Repetitive rating; pulse width limited by max. junction temperature *2: VDD=50V, starting Tj=25C, L=4.6mH, RG=25, IAS=9A HIRF630, HIRF630F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 2/6 MICROELECTRONICS CORP. ELectrical Characteristics (Tj=25C, unless otherwise specified) Symbol V(BR)DSS IDSS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=200V, VGS=0V) Min. Typ. Max. Unit 200 - - V - - 1 uA 50 uA Drain-Source Leakage Current (VDS=160V, VGS=0V, Tj=125C) IGSSF Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) - - 100 nA IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) - - -100 nA VGS(th) Gate Threshold Voltage (VDS=VGS, ID=250uA) 2 - 4 V RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=5.4A)(*4) - - 0.4 3.8 - - S - 800 - - 240 - gFS Forward Transconductance (VDS=50V, ID=5.4A)(*4) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 76 - td(on) Turn-on Delay Time - 9.4 - - 28 - - 39 - - 20 - - - 43 - - 7 - - 23 tr td(off) tf VDS=25V, VGS=0V, f=1MHz Rise Time (VDD=100V, ID=5.9A, RG=12, RD=16)(*4) Turn-off Delay Time Fall Time pF ns Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge LD Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) - 4.5 - nH LS Internal Drain Inductance (Measured from the drain lead 0.25" from package to source bond pad) - 7.5 - nH (VDS=160V, ID=5.9A, VGS=10V) (*4) nC *3: ISD9A, di/dt120A/us, VDDV(BR)DSS, TJ150C *4: Pulse Test: Pulse Width300us, Duty Cycle2% Source-Drain Diode Symbol Characteristic Qrr Reverse Recovery Charge ton Forward Turn-On Time trr Reverse Recovery Time VSD Diode Forward Voltage IF=5.9A, di/dt=100A/us, Tj=25C (*4) IS=9A, VGS=0V, Tj=25C (*4) Min. Typ. Max. Units - 1.1 2.2 uC - ** - - 170 340 ns - - 2 V **: Negligible, Dominated by circuit inductance HIRF630, HIRF630F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 3/6 MICROELECTRONICS CORP. Characteristics Curve On Resistance Variation with Temperature On-Region Characteristic 2.5 14 ID= 3.5 A VGS= 10 V 2.3 12 Normalized Drain-Source ... On-Resistance Drain-Source Current (A) 2.1 8V 10 7V VGS=10 8 6V 6 4 5V 2 1.9 1.7 1.5 1.3 1.1 0.9 0.7 4V 0.5 0 0 2 4 6 8 25 10 50 75 Drain-Source Voltage (V) 100 125 150 Junction Temperature (C) Drain Current Variation with Gate Voltage & Temperature Capacitance Characteristics 3000 10 Capacitance (pF) Drain-Source Current (A) 2500 8 TJ=125C 6 TJ=25C 4 2000 1500 Ciss 1000 2 500 Coss Crss 0 0 0 2 4 6 8 0 10 Gate-Source Voltage (V) 20 30 40 50 Drain-Source Voltage (V) Transconductance Variation with Drain Current & Temperature Body Diode Forward Voltage Variation with Current & Temperature 10 7 TJ= 25C 6 Reverse Drain Current (A)... gFS,Transconductance (S)... TJ= 25C 5 TJ=125C 4 3 2 8 6 4 2 1 0 0 0 2 4 6 Drain Current (A) HIRF630, HIRF630F 8 10 0.2 0.4 0.6 0.8 1 1.2 Body Diode Forward Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 4/6 MICROELECTRONICS CORP. Breakdown Voltage Variation with Temperature VGS=10 V Single Pulse TC=25C 1.14 ID=250 uA 1.12 Drain-Source Current (A) Normalized Drain-Source Breakdown Voltage Maximum Safe Operating Area (TO-220AB) 100 1.16 1.10 1.08 1.06 1.04 1.02 1ms 10ms 1 100ms DC 1.00 0.98 0 25 50 75 100 125 150 0.1 1 Junction Temperature (C) 100 Maximum Safe Operating Area(TO-220FP) VGS=10 V Single Pulse TC=25C Drain-Source Current (A)... 0.5 0.2 0.1 RJC(t)= r(t)*RJC(t) RJC=1.71OC/W 0.05 P(pk) 0.02 1000 100 1.00 0.10 10 Drain-Source Voltage (V) Transient Thermal Response Curve (TO-220AB) r(t) Normalized Effective Transien Thermal Resistance 100us RDS(on) Line 10 t1 100us RDS(on) Line 10 1ms 10ms 1 100ms t2 Single Pulse 0.01 DC TJ-TC= P* RJC(t) Duty Cycle,D= t1/t2 0 0.01 0.01 0.1 1 10 100 1000 Time (ms) 0.1 1 10 100 1000 Drain-Source Voltage(V) Transient Thermal Response Curve (TO-220FP) 1.00 r(t) Normalized Effective Transien Thermal Resistance 0.5 0.2 0.1 RJC(t)= r(t)*RJC(t) RJC= 3.3OC/W 0.10 0.05 P(pk) t1 0.02 t2 TJ-TC= P* RJC(t) Duty Cycle,D= t1/t2 0.01 Single Pulse 0.01 0.01 0.1 1 10 100 1000 Time(ms) HIRF630, HIRF630F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 5/6 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E C D I RF 630 Date Code H K M I 3 G N 2 O P J L Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 1 Tab Control Code Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A 4 1 Pb Free Mark Pb-Free: " . " (Note) Normal: None H E O C D 3 2 5 Date Code G I J N 2 K 1 M L Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source 3 F I RF 630F Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 1/2/4/5 3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HIRF630, HIRF630F HSMC Product Specification HI-SINCERITY Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 6/6 MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C 5 C 5sec 1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HIRF630, HIRF630F o o o o 260 C +0/-5 C 5sec 1sec HSMC Product Specification