HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200401
Issued Date : 2004.04.01
Revised Date : 2005. 04.22
Page No. : 1/6
HIRF630, HIRF630F HSMC Product Specification
HIRF630 / HIRF630F
N-CHANNEL POWER MOSFET
Description
This power MOSFET is designed for low voltage, high speed power
switching applications such as switching regulators, conveters, solenoid
and relay drivers.
Features
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
Thermal Characteristics
Symbol Parameter Value Units
TO-220AB 1.71
RθJC Thermal Resistance
Junction to Case Max. TO-220FP 3.3 °C/W
RθJA Thermal Resistance
Junction to Ambient Max. 62 °C/W
Absolute Maximum Ratings
Symbol Parameter Value Units
VDSS Drain-Sour ce Voltage 200 V
IDDrain to Current (Continuous) 9 A
IDM Drain to Current (Pulsed) (*1) 36 A
VGS Gate-to-Source Voltage (Continue) ±30 V
Total Power Dissipation (TC=25oC)
TO-220AB
TO-220FP 74
38 W
PDDerate above 25°C
TO-220AB
TO-220FP 0.58
0.3 W/°C
EAS Single Pulse Avalanche Energy (*2) 250 mJ
IAR Avalan che Current (*1) 9 A
EAR Repetitive Avalanche Energy (*1) 7.4 mJ
dv/dtPeak Diode Recovery 5 V/ns
TjOperating Temperature Range -55 to 150 °C
Tstg Storage Temperature Range -55 to 150 °C
TLMaximum Lead Temperature for Soldering Purposes, 1/8” from
case for 10 seconds 300 °C
*1: Repetitive rat i ng; pulse width limited by max. junction tem perature
*2: VDD=50V, starting Tj=25°C, L=4.6mH, RG=25Ω, IAS=9A
HIRF630 Series Pin Assignment
123
123
Tab
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Dr ain
Pin 3: Source
G
D
S
HIRF630 Series Symbol
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200401
Issued Date : 2004.04.01
Revised Date : 2005. 04.22
Page No. : 2/6
HIRF630, HIRF630F HSMC Product Specification
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol Characteristic Min. Typ. Max. Unit
V(BR)DSS Drain-S ourc e Br eakdown Vo ltage (VGS=0V, ID=250uA) 200 - - V
Drain-Source Leakage Current (VDS=200V, VGS=0V) - - 1 uA
IDSS Drain-Source Leakage Current (VDS=160V, VGS=0V, Tj=125°C) 50 uA
IGSSF Gate-Source Leakage Current-Forward (Vgsf=30V, VDS=0V) - - 100 nA
IGSSR Gate-Source Leakage Current-Reverse (Vgsr=-30V, VDS=0V) - - -100 nA
VGS(th) Gate Threshold V oltage (VDS=VGS, ID=250uA) 2 - 4 V
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=5.4A)(*4) - - 0.4 Ω
gFS Forward Transconductance (VDS=50V, ID=5.4A)(*4) 3.8 - - S
Ciss Input Capacitance - 800 -
Coss Output Capacitance - 240 -
Crss Reverse Transfer Capacitance VDS=25V, VGS=0V, f=1MHz -76-pF
td(on) Turn-on Delay Time - 9.4 -
trRise T i me - 28 -
td(off) Turn-off Delay Time - 39 -
tfFall Time
(VDD=100V, ID=5.9A, RG=12Ω,
RD=16Ω)(*4)
-20-
ns
QgTotal Gate Charge - - 43
Qgs Gate-Source Charge - - 7
Qgd Gate-Drain Charge
(VDS=160V, ID=5.9 A, VGS=10V)
(*4) --23
nC
LDInternal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die) -4.5-nH
LSInternal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad) -7.5-nH
*3: ISD≤9A, di /dt≤120A/us, VDD≤V(BR) DSS , TJ≤150°C
*4: Pulse Test: Pulse Width≤300us, Duty Cycl e≤2%
Source-Drain Diode
Symbol Characteristic Min. Typ. Max. Units
Qrr Reverse Recovery Charge - 1.1 2.2 uC
ton Forw ard T u rn -On Time - ** -
trr Reverse Recovery Time IF=5.9A, di/dt=100A/us, Tj=25°C (*4) - 170 340 ns
VSD Diode Forward Voltage IS=9A, VGS=0V, Tj=25°C (*4) --2V
**: Negligibl e, Dominated by circui t inductance
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200401
Issued Date : 2004.04.01
Revised Date : 2005. 04.22
Page No. : 3/6
HIRF630, HIRF630F HSMC Product Specification
Characteristics Curve
Body Di ode For wa rd Vol t age Variat i on with
Current & Temperat ure
0
2
4
6
8
10
0.2 0.4 0.6 0.8 1 1.2
Body Diode Forward Vol tage (V)
Reverse Drain Cur r ent (A) ...
T
J
= 25°C
Transconductance Variation with Drain Current
& Temperatur e
0
1
2
3
4
5
6
7
0246810
Dr a in Cu rre nt (A)
gFS,Tr ans condu ctance (S) ...
T
J
= 25°C
T
J
=125°C
Capacitance Ch ar act erist ics
0
500
1000
1500
2000
2500
3000
0 1020304050
Drain - Sour ce Voltage ( V)
Capacitance ( pF)
Ciss
Crss Coss
Drain Current Variation with Gate Voltage &
Temperature
0
2
4
6
8
10
02468
G at e - Source Vol tage (V)
Drain- Sour ce Cur r ent (A
)
T
J
=125°C
T
J
=25°C
On Resist ance Variation wi th Tempera tu re
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
25 50 75 100 125 150
Jun ction T em per a t ure ( ºC)
Norm alized Drain- Sour ce ...
On-Resistance
ID= 3.5 A
VGS= 10
V
On-Region Characteristic
0
2
4
6
8
10
12
14
0246810
Drain - Sour ce Voltage ( V)
Drain- Sour ce Cur r ent (A
)
VGS=10
8V
5
V
6
V
7
V
4
V
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200401
Issued Date : 2004.04.01
Revised Date : 2005. 04.22
Page No. : 4/6
HIRF630, HIRF630F HSMC Product Specification
Breakdown Voltage Variation with Temperature
0.98
1.00
1.02
1.04
1.06
1.08
1.10
1.12
1.14
1.16
25 50 75 100 125 150
Jun ction T em perature ( ° C)
Norm alized Drain- Sour ce Br eakdo w
n
Voltage
ID=250 u
A
Ma ximum Safe Operating Area ( TO-220AB)
0
1
10
100
0.1 110 100 1000
Dra in-Sourc e Volt ag e ( V)
Drain- Sour ce Cur r ent (A
)
RDS(on) Line
DC
100ms
10ms
1ms
100us
VGS=10 V
Single Pulse
TC=25°C
Tran si ent Ther m al R esponse Curve
(TO-220AB)
0.01
0.10
1.00
0.01 0.1 1 10 100 1000
Time (ms)
r (t ) No rma liz e d E ffe c tive Trans ie n
Thermal Resist ance
0.01
0.1
0.05
0.02
0.2
0.5
Single Pulse
RθJC(t)= r(t)*RθJC(t)
RθJC=1.71OC/W
t2
P(pk) t1
TJ-TC= P* RθJC(t)
Duty Cycle,D= t1/t2
Maximum Safe Operating Area(TO-220FP)
0
1
10
100
0.1 110 100 1000
Drain-Source Vol tage(V)
Drain- Sour ce Cur r ent (A) ...
R
DS(on)
Line
DC
100ms
10ms
1ms
100us
V
GS
=10 V
Single Pulse
T
C
=25°C
Tr an sient Therm al Response Cu rve
(TO-220FP)
0.01
0.10
1.00
0.01 0.1 1 10 100 1000
Time(ms)
r ( t) No r maliz e d E ffe c tive T ransien
Thermal Resist ance
0.01
0.1
0.05
0.02
0.2
0.5
Single Pulse
RθJC(t)= r(t)*RθJC(t)
RθJC= 3.3OC/W
t2
P(pk) t1
TJ-TC= P* RθJC(t)
Duty Cycle,D= t1/t2
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200401
Issued Date : 2004.04.01
Revised Date : 2005. 04.22
Page No. : 5/6
HIRF630, HIRF630F HSMC Product Specification
TO-220AB Dimension
TO-220FP Dimension
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.
Head Office And Factory:
• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al P ark Hsi n-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
A
D
F
G I
K
LM
3
2
1
C
J
N
α3
E
α2
O
α4
α5
α1
A B
E
G
IK
M
O
P
3
2
1
C
N
H
D
Tab
F
J
L
Marking:
Control Code
Date Code
HF
63
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
IR
0
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I-*3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N-*2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
Marking:
Control Code
Date Code
HF
63
Pb Free Mark
Pb-Free: "
.
"
(Note)
Normal: None
IR
0F
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Com pound : Epoxy resin family,
flammability solid burning class: UL94V-0
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
DIM Min. Max.
A 6.48 7.40
C 4.40 4.90
D 2.34 3.00
E 0.45 0.80
F 9.80 10.36
G 3.10 3.60
I 2.70 3.43
J 0.60 1.00
K 2.34 2.74
L 12.48 13.60
M 15.67 16.20
N 0.90 1.47
O 2.00 2.96
α1/2/4/5 -*5
o
α3-*27
o
*: Typical, Unit: mm
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200401
Issued Date : 2004.04.01
Revised Date : 2005. 04.22
Page No. : 6/6
HIRF630, HIRF630F HSMC Product Specification
Solderi ng Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate (TL to TP)<3
oC/sec <3oC/sec
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
100oC
150oC
60~120 sec
150oC
200oC
60~180 sec
Tsmax to TL
- Ramp-up Rate <3oC/sec <3oC/sec
T ime mai n t a i n ed above:
- Temperature (TL)
- Ti me (tL)183oC
60~150 sec 217oC
60~150 sec
Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC
Time within 5oC of actual Peak
Temperature (tP)10~30 sec 20~40 sec
Ramp- down Rate <6oC/sec <6oC/sec
Time 25oC to Peak Temperature <6 minutes <8 minutes
3. Flow (wave) soldering (solder dipping)
Products Peak temperature Dipping time
Pb devices. 245oC ±5oC 5sec ±1sec
Pb-Free de vic es . 260oC +0/-5oC5sec ±1sec
Figure 1: Temperature prof ile
t
P
t
L
Ramp-down
Ramp-up
Ts
max
Ts
min
Critical Zone
T
L
to T
P
t
S
Preheat
T
L
T
P
25 t 25
o
C to Peak
Time
Temperature
