FMV11N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.00.5V) High avalanche durability Equivalent circuit schematic TO-220F(SLS) Drain(D) Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Drain-Source Voltage Characteristics 900 900 11 44 30 11 811.9 12 2.2 100 2.16 120 150 -55 to + 150 Unit V V A A V A mJ mJ kV/s A/s Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25C Tc=25C W C C Electrical Characteristics at Tc=25C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250A, VGS =0V I D =250A, VDS =VGS VDS =900V, VGS =0V VDS =720V, VGS =0V VGS =30V, VDS =0V I D =5.5A, VGS =10V I D =5.5A, VDS =25V Tch =25C Tch =125C VDS =25V VGS =0V f=1MHz Vcc =600V VGS =10V I D =5.5A RG =20 Vcc =450V I D =11A VGS =10V L=4.92mH, Tch =25C I F =11A, VGS =0V, Tch =25C I F =11A, VGS =0V -di/dt=100A/s, Tch=25C min. 900 3.5 6.5 11 - typ. 4.0 10 0.83 13 2300 200 15 37 32 124 34 60 17 23 7 0.90 2.0 20 max. 4.5 25 250 100 1.0 3450 300 22.5 56 48 186 51 90 26 35 11 1.35 - Unit V V min. typ. max. 1.0417 58.0 Unit C/W C/W A nA S pF ns nC A V S C Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Note *1 : Tch150C Note *2 : Stating Tch=25C, IAS =4.4A, L=76.9mH, Vcc=90V, RG =10 E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche current' graph. Test Conditions Channel to case Channel to ambient Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F -I D, -di/dt=100A/s, VccBVDSS, Tch150C. Note *5 : I F -I D, dv/dt=2.2kV/s, VccBVDSS, Tch150C. 1 FMV11N90E 200 FUJI POWER MOSFET Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25c 2 10 t= 1s 150 1 10s 10 100 0 ID [A] PD [W] 100s 50 10 1ms Power loss waveform : Square waveform -1 10 PD t 0 -2 0 20 25 50 75 Tc [C] 100 125 10 150 -1 0 10 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 100 1 10 2 10 VDS [V] 3 10 10 Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 10V 7.0V 6.5V 10 ID[A] ID [A] 15 6.0V 10 1 5 VGS=5.5V 0.1 0 0 100 4 8 12 VDS [V] 16 20 0 24 1 2 3 4 5 VGS[V] 6 7 8 9 10 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 1.8 VGS=5.5V 1.6 6V 1.4 gfs [S] RDS(on) [ ] 10 1.2 6.5V 7V 10V 20V 1.0 1 0.8 0.6 0.1 0.1 1 ID [A] 10 0 100 5 10 ID [A] 2 15 20 FMV11N90E Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5.5A,VGS=10V 8 3.5 7 3.0 6 2.5 5 VGS(th) [V] RDS(on) [ ] 4.0 FUJI POWER MOSFET 2.0 1.5 typ. 4 min. 2 typ. 0.5 1 0.0 -50 -25 0 25 50 Tch [C] 75 100 125 0 150 -50 -25 0 25 50 75 Tch [C] 100 125 4 10 14 12 Vcc= 120V 450V 720V Ciss 3 10 10 C [pF] 8 2 10 Coss 6 4 1 10 Crss 2 0 0 0 100 150 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Gate Charge Characteristics VGS=f(Qg):ID=11A,Tch=25C VGS [V] max. 3 max. 1.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A 20 40 Qg [nC] 60 80 10 100 -2 -1 10 10 0 10 VDS [V] 1 2 10 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=20 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C 3 10 tf 10 td(off) 2 1 td(on) t [ns] IF [A] 10 tr 1 10 0.1 0.01 0.00 0 10 0.25 0.50 0.75 VSD [V] 1.00 1.25 -1 10 1.50 3 0 10 1 ID [A] 10 2 10 FMV11N90E 900 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=90V,I(AV)<=11A Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 1 10 IAS=4.4A 800 0 10 EAV [mJ] 600 Zth(ch-c) [C/W] 700 IAS=6.6A 500 -1 10 -2 10 400 IAS=11A 300 -3 10 -6 10 200 -5 10 -4 10 -3 10 t [sec] 100 0 0 25 50 75 100 125 150 starting Tch [C] 4 -2 10 -1 10 0 10 FMV11N90E FUJI POWER MOSFET WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. * Computers * OA equipment * Communications equipment (terminal devices) * Machine tools * Audiovisual equipment * Electrical home appliances * Personal equipment 5. 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