Philips: Semiconductors High-speed double diode FEATURES e Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA . APPLICATIONS High-speed switching in e.g. surface mounted circuits. DESCRIPTION PINNING The BAS28 consists of two PIN DESCRIPTION high-speed switching diodes, fabricated in planar technology, and 4 cathode (k1) encapsulated in the small plastic 2 cathode (k2) SMD SOT143 package. The diodes 3 anode (a2) are not connected. 4 anode (a1) 4 3 4 3 1 2 1 2 Top view MAMO59 Marking code: JTp. Fig.1 Simplified outline (SOT143) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VaRM repetitive peak reverse voltage ~ 85 Vv Ve continuous reverse voltage ~ 75 Vv \F continuous forward current see Fig.2; note 1 - 215 mA lFRM repetitive peak forward current - 500 mA lesm non-repetitive peak forward current | square wave; T; = 25 C prior to surge; see Fig.4 t=1us ~ 4 A t=1ms > 1 A t=1s ~ 0.5 |A Prot total power dissipation Tamb = 25 C; note 1 ~ 250 mW Tatg storage temperature -65 +150 C T junction temperature - 150 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 1-114 Philips Semiconductors Product specification High-speed double diode BAS28 ELECTRICAL CHARACTERISTICS. T; = 25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Ve forward voltage see Fig.3 le =1mA - 715 mV Ir =10MA - 855 mV Ir = 50 mA - 1 Vv Ir = 150 mA ~ 1.25 |V In reverse current see Fig.5 VR=25V - 30 nA Va =75V ~ 1 yA Vp = 25 V; Tj = 150 C - 30 pA VR = 75 V; Tj = 150 C - 50 pA Cu diode capacitance f= 1 MHz; Vp = 0; see Fig.6 - 1.5 |pF ter reverse recovery time when switched from Ir = 10 mA to - 4 ns I_ = 10 mA; Ry = 100 Q; measured at Ip = 1 mA; see Fig.7 Ver forward recovery voltage when switched from Ir = 10 mA; - 1.75 |V t, = 20 ns; see Fig.8 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Rtn j-tp thermal resistance from junction to tie-point 360 KW Rit j-a thermal resistance from junction to ambient | note 1 500 KAW Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 1-115 Philips Semiconductors Product specification High-speed double diode BAS28 GRAPHICAL DATA 250 (mA) 200 150 100 0 50 100 150 200 Tamb (C) Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. 300 (mA) 200 100 0 i Ve (V) 2 (1) Tj = 150 C; typical vatues. (2) T= 25 C; typical values. (3) T, = 25 C; maximum values. Fig.3 Forward current as a function of forward voitage. 10? 'Fsm (A) 1071 1 10 Based on square wave currents. Tj = 25 C prior to surge. MBG704 ty (us) Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 1-116 Philips Semiconductors Product specification High-speed double diode BAS28 Tj (c) 200 Fig.5 Reverse current as a function of junction temperature. 0.8 (pF) 0.6 0.4 0.2 2 16 Vr WV) f=1 MHz; T, = 25C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 10 1-117 Philips Semiconductors Product specification High-speed double diode BAS28 | as 4q I = Rig= 500 L fe _| | SAMPLING OSCILLOSCOPE VeVpatiexRg R,=509 | MGA8BT input signal output signal (1) IgetmA. Fig.7 Reverse recovery voltage test circuit and waveforms. l 4kQ 450 2 i v j 90% Rg= 50 9 OSCILLOSCOPE Vir j R,=502 10% wane TT. ' wl ty tp +! input output signal signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 10 1-118