2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 (Previous ADE-208-1367(Z)) Rev.3.00 Feb.14.2005 Features * High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, D = 45%min. (f = 836.5 MHz) * Compact package capable of surface mounting Outline PLZZ0004CA-A (Previouscode:UPAK) D 2 1 1.Gate 2.Source 3.Drain 4.Source 3 G 4 S Note: Marking is "BX". This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C Rev.3.00, Feb.14.2005, page 1 of 4 Symbol Ratings Unit VDSS VGSS ID 17 10 0.4 1 3 150 -45 to +150 V V A A W C C ID(pulse) Note1 Pch Note2 Tch Tstg 2SK2596 Electrical Characteristics (Ta = 25C) Item Symbol Min. Typ Max. Unit IDSS IGSS VGS(off) Ciss Coss Pout -- -- 0.4 -- -- 30.2 -- -- -- 22 10.5 31.46 10 5.0 1.1 -- -- -- A A V pF pF dBm D 45 55 -- % Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Drain Efficiency Test Conditions VDS = 12 V, VGS = 0 VGS = 10 V, VDS = 0 ID = 2 mA, VDS = 12 V VGS = 5 V, VDS = 0, f = 1 MHz VDS = 12 V, VGS = 0, f = 1 MHz VDS = 12 V, f = 836.5 MHz Pin = 18 dBm VDS = 12 V, Pout = 30.2 dBm f = 836.5 MHz, Pin = 18 dBm Main Characteristics Typical Output Characteristics 3.0 4 Pulse test 6V ID 2.0 5V 1.5 2 4V 1.0 1 3V 0.5 VGS = 2 V 50 100 150 0 200 Tc (C) 1.0 Tc = -25C 25C 75C 0.6 0.4 4 6 8 0.5 10 (V) Forward Transfer Admittance vs. Drain Current Tc = -25C 25C 0.2 0.1 75C 0.05 0.2 0 Forward Transfer Admittance |yfs| (S) 1.0 0.8 2 Drain to Source Voltage VDS Typical Transfer Characteristics (A) 8V (A) 3 Case Temperature ID V 2.5 0 Drain Current 10 Drain Current Channel Power Dissipation Pch (W) Maximum Channel Power Dissipation Curve VDS = 12 V Pulse Test 1 2 3 Gate to Source Voltage Rev.3.00, Feb.14.2005, page 2 of 4 4 VGS 0.02 5 (V) VDS = 12 V Pulse Test 0.01 0.01 0.02 0.05 0.1 0.2 Drain Current ID (A) 0.5 1 2SK2596 Gate to Source Cutoff Voltage vs. Ambient Temperature 10 1.2 5 Gate to Source Cutoff Voltage VGS(off) (V) 25C 2 Tc = -25C 1 0.5 75C 0.2 0.1 0.05 0.02 0.01 0.01 0.02 VDS = 12 V Pulse Test 0.05 0.1 0.2 0.5 1.0 0.4 0.2 VDS = 12 V 0 -25 1 50 75 100 125 Output Capacitance Coss (pF) 100 22 20 18 16 VDS = 0 f = 1 MHz 50 20 10 5 2 VGS = 0 f = 1 MHz 1 0.5 1 2 5 10 0.1 0.2 Drain to Source VDS (V) -6 -2 2 6 10 Gate to Source Voltage VGS (V) 2.5 20 10 5 VGS = 0 f = 1 MHz 80 Po 1.5 60 D 1.0 40 0.5 20 0 0.5 1 2 5 10 Gate to Source Voltage VGS (V) Rev.3.00, Feb.14.2005, page 3 of 4 20 0 20 40 60 80 Input power Pin (W) (%) 50 100 VDS = 12 V IDO = 100 mA 2.0 f = 836.5 MHz D 100 1 0.1 0.2 20 Output Power, Drain Efficiency vs. Input Power Reverse Transfer Capacitance vs. Gate to Source Voltage Output Power Po (W) Input Capacitance Ciss (pF) 25 Output Capacitance vs. Drain to Source Voltage 24 Reverse Transfer Capacitance Crss (pF) 0 Ambient Temperature Ta (C) Input Capacitance vs. Gate to Source Voltage 2 1 mA ID = 0.1 m A 0.6 Drain Current ID (A) 14 -10 10 mA 0.8 100 Drain Efficiency Drain to Source Saturation Voltage V DS(sat)(V) Drain to Source Saturation Voltage vs. Drain Current 2SK2596 Package Dimensions RENESAS Code Previous Code MASS[Typ.] PLZZ0004CA-A UPAK / UPAKV 0.050g 1.5 1.5 3.0 1.5 0.1 0.44 Max 2.5 0.1 4.25 Max (1.5) 0.44 Max (0.2) 0.53 Max 0.48 Max 0.8 Min 1 0.4 4.5 0.1 1.8 Max Unit: mm (2.5) SC-62 (0.4) JEITA Package Code Ordering Information Part Name 2SK2596BX Quantity 1000 Shipping Container 178 taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00, Feb.14.2005, page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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