2SAR572D
PNP -5.0A -30V Middle Power Transistor Datasheet
llOutline
Parameter Value TO-252
SC-63
VCEO -30V
IC-5A
CPT
llFeatures ll Inner circuit
1) Suitable for Middle Power Driver.
2) Complementary NPN Types : 2SCR572D.
3) Low VCE(sat)
VCE(sat)=-400mV(Max.).
(IC/IB=-2A/-100mA)
llApplication
LOW FREQUENCY AMPLIFIER
llPackaging specifications
Part No. Package Package
size
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit.(pcs)
Marking
2SAR572D TO-252
(CPT) 6595 TL 330 16 2500 AR572
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© 2016 ROHM Co., Ltd. All rights reserved. 1/6 20161012 - Rev.002
Not Recommended for
New Designs
2SAR572D Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO -30 V
Collector-emitter voltage VCEO -30 V
Emitter-base voltage VEBO -6 V
Collector current IC-5 A
ICP*1 -10 A
Base current IB-1.5 A
Power dissipation PD*2 10 W
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -100μA -30 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -30 - - V
Emitter-base breakdown voltage BVEBO IE = -100μA -6 - - V
Collector cut-off current ICBO VCB = -30V - - -1 μA
Emitter cut-off current IEBO VEB = -4V - - -1 μA
Collector-emitter saturation voltage VCE(sat) IC = -2A, IB = -100mA - -200 -400 mV
DC current gain hFE VCE = -3V, IC = -500mA 200 - 500 -
Transition frequency fT*3 VCE = -10V, IE = 200mA,
f = 100MHz - 300 - MHz
Output capacitance Cob
VCB = -10V, IE = 0A,
f = 1MHz - 40 - pF
Turn-On time ton IC = -2.5A,
IB1 = -250mA,
IB2 = 250mA,
VCC ⋍ -10V,
RL = 4Ω
See test circuit
- 80 - ns
Storage time tstg - 400 - ns
Fall time tf- 200 - ns
*1 Pw=10ms Single Pulse
*2 Tc=25℃
*3 PULSED
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© 2016 ROHM Co., Ltd. All rights reserved. 2/6 20161012 - Rev.002
Not Recommended for
New Designs
2SAR572D Datasheet
llElectrical characteristic curves(Ta = 25°C)
Fig.1 Grounded Emitter Propagation
Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector
Current(I)
Fig.4 DC Current Gain vs. Collector
Current(II)
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© 2015 ROHM Co., Ltd. All rights reserved. 3/6 20161012 - Rev.002
Not Recommended for
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2SAR572D Datasheet
llElectrical characteristic curves(Ta = 25°C)
Fig.5 Collector-Emitter Saturation Voltage vs.
Collector Current(I)
Fig.6 Collector-Emitter Saturation Voltage vs.
Collector Current(II)
Fig.7 Base-Emitter Saturation Voltage vs.
Collector Current
Fig.8 Gain Bandwidth Product vs. Emitter
Current
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© 2016 ROHM Co., Ltd. All rights reserved. 4/6 20161012 - Rev.002
Not Recommended for
New Designs
2SAR572D Datasheet
llElectrical characteristic curves(Ta = 25°C)
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage
Collector output capacitance vs.
Collector-Base Voltage
Fig.10 Safe Operating Area
SWITCHING TIME TEST CIRCUIT
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© 2016 ROHM Co., Ltd. All rights reserved. 5/6 20161012 - Rev.002
Not Recommended for
New Designs
2SAR572D Datasheet
llDimensions
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© 2016 ROHM Co., Ltd. All rights reserved. 6/6 20161012 - Rev.002
Not Recommended for
New Designs
Notice-PGA-E Rev.003
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