TOPAZ SEMICONDUCTOR OSE D B soas2as ooo1o40 1 i T-35-AS $D1127 N-CHANNEL ENHANCEMENT-MODE VERTICAL D-MOS FET ULTRA LOW-LEAKAGE ORDERING INFORMATION SEMICONDUC TOR TO-226AA (TO-92) Plastic Package $01127BD Sorted Chips In Waffle Pack SD1127CHP Description 60 Voit, 4.0 ohm FEATURES APPLICATIONS @ Drain-Source Leakage (Ipss), 1.0nA max H@ High-Speed Switches @ Low Output and Transfer Capacitances @ Low-Leakage Solid State Relays @ Extended Safe Operating Area M@ High-Speed Pulse Amplifiers @ Logic Interfaces @ Line Drivers ABSOLUTE MAXIMUM RATINGS (1, = + 25C unless otherwise noted) Drain-Source Voltage ....-... 2.0. . cs cee ce eee +60V Continuous Device Dissipation Drain-Gate Voltage (Vge =O)... 6. eee ce ences +60V Ta = +25C Te = 425C Gate-Source Voltage... ec cece eee eee +30V $D1127BD 0.30W 1.0W Continuous Drain Current Linear Derating Factor Ta = +25C To = +25C Ta = +25C Te = +25C D1127BD .20A 36A $D1127BD 3.0mMW/C 10mW/G Peak Pulsed Drain Current...... 00.5 cece een e een 2.0A Operating Junction and Storage Temperature Range -55C to + 150C Lead Temperature (1/16" from mounting surface for 30 SOC.) cc ccc cette cence eens + 260C PIN CONFIGURATION PACKAGE DIMENSIONS CHIP CONFIGURATION (TO-92) TO-226AA (See Package 5) Drain Gate Dimensions: 054 * .051 .020 in. Drain is backside contact. 3-84 0-88-6 TOPAZ SEMICONDUCTOR OSE D BR soase2t Ono1o41, 3 i TIAL nee n4i27 3 $D1127 SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (1, = +25C unless otherwise noted) # CHARACTERISTIC $D1127 UNIT TEST CONDITION MIN TYP MAX 1 BVpss Drain-Source 60 90 Vv Ip = 10pA, Vag =0 Breakdown Voltage . : 2 Vasith) Gate-Source 0.8 2.4 Vv Vos = Ves; lp =1mMA Threshold Voltage 3 {Ollags Gate-Body 03 1.0 nA_ | Veg = 20V, Vps =9 4 le Leakage Current 10 [ Ta = + 125C 5 |H| Ipsg Drain-Source OFF 1.0 nA Vos = 90V, Vas =90 6 Leakage Current 100 [Ta = + 125C 7 Ipjon) + ON Drain Current 2.0 3.5 A Vos = 25V, Vag = 10V (Note 1) 8 fos(on) Drain-Source 3.2 5.0 ohms | Ves = V, Ip =0.3A (Note 1) 9 ON Resistance 29 4.0 Vas = 10V, Ip = T.0A (Note 7) 10 Ofs Common-Source 250 500 mmhos | Vps = 25V, Ip =1.0A Forward Transcond. f= 1KHz (Note 1) i Ciss Common-Source : 80 Input Capacitance oO Common-Source Vos = 25V, Vas = 0 12 = | Crss Reverse Transfer 15 pF f=1MHz 4 Capacitance 13 [Fleos, | Common-Source 15 eS Output Capacitance . 14 ton Turn-On Time 4.0 6.0 Vpp = 25V nSec | R_= 25 chms 15 toft Turn-Off Time 4.0 6.0 Re = 51 ohms VGton) = 10V Note 1: Pulse Teast 80uSeo, 1% Duty Cycle SWITCHING TIMES TEST CIRCUIT TEST WAVEFORMS Yop Ay Vaton) Vin Vout 0 INPUT PULSE VgO+4 t, <0.6 nSEC . PULSE WIDTH 100 nSEC s10n 2 Fe Yoo SAMPLING OSCILLOSCOPE t, < 0.96 nSEC Vout Ain > IMR 512 Cin $2.0 pF ~oV OSCILLOSCOPE = 3-85