A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C TRANS1.SYM
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 10 mA 18 V
BVCES IC = 5 mA 36 V
BVEBO IC = 1.0 mA 4.0 V
ICBO VCE = 15 V .25 mA
HFE VCE = 5.0 V IC = 50 mA 10 100 ---
COB VCE = 15 V f = 1.0 MHz 20 pf
GPE VCE = 12.5 V f = 175 MHz 12 dB
η VCE = 12.5 V PPUT = 4.0 W f = 175 MHz
IMPEDANCE VCC = 12.6 V PIN = 0.2 W f = 136 MHZ
VCC = 12.6 V PIN = 0.2 W f = 155 MHZ
VCC = 12.6 V PIN = 0.2 W f = 175 MHZ
ZIN = 3.0 – j3.8
ZIN = 4.0 – j2.0
ZIN = 4.3 – j5.8
ZCL = 12.8 – j11
ZCL = 11 – j14.8
ZCL = 13 – j20
Ω
SILICON NPN RF POWER TRANSISTOR
SD1127
DESCRIPTION:
The ASI SD1127 is designed for VHF
mobil communications applications up
to 175 MHz.
FEATURES:
• Grounded Emiter The ASI SD1127
• Gp 12 dB @ 12.5V 175 MHz
• Pout 4.0 V Min.
MAXIMUM RATINGS
IC 0.64A
VCB 36 V
VCE 18 V
PDISS 8 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
θJC 21.9 °C/W
PACKAGE STYLE TO-39
1 = COLLECTOR 2 = BASE
3 = EMITTER
