LDO Regulator for RF and Analog Circuits - Ultra-Low Noise and High PSRR 450 mA NCP161 The NCP161 is a linear regulator capable of supplying 450 mA output current. Designed to meet the requirements of RF and analog circuits, the NCP161 device provides low noise, high PSRR, low quiescent current, and very good load/line transients. The device is designed to work with a 1 mF input and a 1 mF output ceramic capacitor. It is available in two thickness ultra-small 0.35P, 0.65 mm x 0.65 mm Chip Scale Package (CSP) and XDFN4 0.65P, 1 mm x 1 mm. www.onsemi.com MARKING DIAGRAMS WLCSP4 CASE 567JZ A1 WLCSP4 CASE 567KA A1 X Features * Operating Input Voltage Range: 1.9 V to 5.5 V Available in Fixed Voltage Option: 1.8 V to 5.14 V 2% Accuracy Over Load/Temperature Ultra Low Quiescent Current Typ. 18 mA Standby Current: Typ. 0.1 mA Very Low Dropout: 150 mV at 450 mA Ultra High PSRR: Typ. 98 dB at 20 mA, f = 1 kHz Ultra Low Noise: 10 mVRMS Stable with a 1 mF Small Case Size Ceramic Capacitors Available in -WLCSP4 0.65 mm x 0.65 mm x 0.4 mm -WLCSP4 0.65 mm x 0.65 mm x 0.33 mm -XDFN4 1 mm x 1 mm x 0.4 mm -SOT23-5 2.9 mm x 2.8 mm x 1.2 mm These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications * * * * 1 XDFN4 CASE 711AJ X XX M 1 XXX M * * * * * * * * * * 1 SOT23-5 CASE 527AH X, XX, XXX = Specific Device Code M = Date Code PIN CONNECTIONS (Top Views) Battery-powered Equipment Wireless LAN Devices Smartphones, Tablets Cameras, DVRs, STB and Camcorders IN 1 GND 2 EN 3 5 OUT 4 NC VOUT VIN IN OUT IN OUT A1 A2 NCP161 CIN 1 mF Ceramic EN ON OFF GND COUT 1 mF Ceramic Figure 1. Typical Application Schematics IN 4 EN 3 EPAD B1 B2 EN GND 1 OUT 2 GND ORDERING INFORMATION See detailed ordering and shipping information on page 16 of this data sheet. (c) Semiconductor Components Industries, LLC, 2017 December, 2020 - Rev. 16 1 Publication Order Number: NCP161/D NCP161 IN EN ENABLE THERMAL LOGIC SHUTDOWN BANDGAP MOSFET REFERENCE INTEGRATED DRIVER WITH SOFT-START CURRENT LIMIT OUT * ACTIVE DISCHARGE Version A only EN GND Figure 2. Simplified Schematic Block Diagram PIN FUNCTION DESCRIPTION Pin No. CSP4 Pin No. SOT23-5 Pin No. XDFN4 Pin Name A1 1 4 IN A2 5 1 OUT Regulated output voltage. The output should be bypassed with small 1 mF ceramic capacitor. B1 3 3 EN Chip enable: Applying VEN < 0.4 V disables the regulator, Pulling VEN > 1.2 V enables the LDO. B2 2 2 GND Common ground connection - - EPAD EPAD Expose pad should be tied to ground plane for better power dissipation Description Input voltage supply pin ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VIN -0.3 V to 6 V Output Voltage VOUT -0.3 to VIN + 0.3, max. 6 V Chip Enable Input VCE -0.3 to 6 V Output Short Circuit Duration tSC unlimited s Maximum Junction Temperature TJ 150 C TSTG -55 to 150 C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Input Voltage (Note 1) Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per EIA/JESD22-A114 ESD Machine Model tested per EIA/JESD22-A115 Latchup Current Maximum Rating tested per JEDEC standard: JESD78. THERMAL CHARACTERISTICS Rating Symbol Value RqJA Thermal Characteristics, CSP4 (Note 3) Thermal Resistance, Junction-to-Air 108 Thermal Characteristics, XDFN4 (Note 3) Thermal Resistance, Junction-to-Air 198.1 Thermal Characteristics, SOT23-5 (Note 3) Thermal Resistance, Junction-to-Air 3. Measured according to JEDEC board specification. Detailed description of the board can be found in JESD51-7 www.onsemi.com 2 218 Unit C/W NCP161 ELECTRICAL CHARACTERISTICS -40C TJ 125C; VIN = VOUT(NOM) + 1 V; IOUT = 1 mA, CIN = COUT = 1 mF, unless otherwise noted. VEN = 1.2 V. Typical values are at TJ = +25C (Note 4). Parameter Test Conditions Operating Input Voltage Output Voltage Accuracy Line Regulation Load Regulation Dropout Voltage (Note 5) VIN = VOUT(NOM) + 1 V 0 mA IOUT 450 mA WLCSP4, XDFN4 VIN = VOUT(NOM) + 1 V SOT23-5 VOUT(NOM) + 1 V VIN 5.5 V IOUT = 1 mA to 450 mA WLCSP4, XDFN4 WLCSP4, XDFN4 IOUT = 450 mA WLCSP4, XDFN4 IOUT = 450 mA SOT23-5 Min Max Unit VIN 1.9 5.5 V -2 +2 -2 +2 VOUT LineReg Typ 0.02 LoadReg 0.008 VOUT(NOM) = 1.8 V 300 450 VOUT(NOM) = 1.85 V 290 393 VOUT(NOM) = 2.5 V 190 315 VOUT(NOM) = 2.8 V 175 290 VOUT(NOM) = 2.85 V 170 290 165 275 VOUT(NOM) = 3.3 V 160 260 VOUT(NOM) = 3.5 V 150 255 VOUT(NOM) = 4.5 V 120 210 VOUT(NOM) = 5.0 V 105 190 VOUT(NOM) = 5.14 V 105 185 VOUT(NOM) = 1.8 V 365 480 VOUT(NOM) = 2.8 V 260 345 240 330 225 305 VOUT(NOM) = 3.0 V VDO VDO VOUT(NOM) = 3.3 V mV mV VOUT = 90% VOUT(NOM) ICL Short Circuit Current VOUT = 0 V ISC 690 Quiescent Current IOUT = 0 mA IQ 18 23 mA Shutdown Current VEN 0.4 V, VIN = 4.8 V IDIS 0.01 1 mA EN Input Voltage "H" VENH EN Input Voltage "L" VENL VEN = 4.8 V IEN EN Pull Down Current Turn-On Time Power Supply Rejection Ratio Output Voltage Noise Thermal Shutdown Threshold Active output discharge resistance Line transient (Note 6) 0.4 0.2 0.5 V mA 120 ms f = 100 Hz f = 1 kHz f = 10 kHz f = 100 kHz PSRR 91 98 82 48 dB IOUT = 1 mA IOUT = 250 mA VN 14 10 mVRMS Temperature rising TSDH 160 C Temperature falling TSDL 140 C VEN < 0.4 V, Version A only RDIS 280 W f = 10 Hz to 100 kHz VIN = (VOUT(NOM) + 1 V) to (VOUT(NOM) + 1.6 V) in 30 ms, IOUT = 1 mA VIN = (VOUT(NOM) + 1.6 V) to (VOUT(NOM) + 1 V) in 30 ms, IOUT = 1 mA Load transient (Note 6) mA 1.2 COUT = 1 mF, From assertion of VEN to VOUT = 95% VOUT(NOM) IOUT = 20 mA 700 %/mA Output Current Limit EN Pin Threshold Voltage 450 % %/V 0.001 0.005 SOT23-5 VOUT(NOM) = 3.0 V Dropout Voltage (Note 5) Symbol IOUT = 1 mA to 450 mA in 10 ms IOUT = 450 mA to 1mA in 10 ms -1 TranLINE TranLOAD mV +1 -40 +40 mV Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TA = 25C. Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible. 5. Dropout voltage is characterized when VOUT falls 100 mV below VOUT(NOM). 6. Guaranteed by design. www.onsemi.com 3 NCP161 TYPICAL CHARACTERISTICS 2.520 1.820 1.815 2.515 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) IOUT = 10 mA 1.805 2.505 IOUT = 450 mA 1.800 2.495 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 1.790 1.785 1.780 -40 -20 0 20 40 60 80 100 120 VIN = 3.5 V VOUT = 2.5 V CIN = 1 mF COUT = 1 mF 2.490 2.485 2.480 -40 -20 140 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 3. Output Voltage vs. Temperature - VOUT = 1.8 V - XDFN Package Figure 4. Output Voltage vs. Temperature - VOUT = 2.5 V - XDFN Package 3.33 3.35 3.32 3.34 VOUT, OUTPUT VOLTAGE (V) VOUT, OUTPUT VOLTAGE (V) IOUT = 450 mA 2.500 1.795 3.31 IOUT = 10 mA 3.30 3.29 IOUT = 450 mA 3.28 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 3.27 3.26 3.25 -40 -20 0 20 40 60 80 100 120 3.33 IOUT = 10 mA and 450 mA 3.32 3.31 3.30 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 3.29 3.28 3.27 -40 -20 140 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Output Voltage vs. Temperature - VOUT = 3.3 V - XDFN Package Figure 6. Output Voltage vs. Temperature - VOUT = 3.3 V - CSP Package 0.010 REGLINE, LINE REGULATION (%/V) 5.19 VOUT, OUTPUT VOLTAGE (V) IOUT = 10 mA 2.510 1.810 5.18 5.17 IOUT = 10 mA 5.16 5.15 IOUT = 450 mA 5.14 VIN = 5.5 V VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 5.13 5.12 5.11 -40 -20 0 20 40 60 80 100 120 140 0.009 0.008 0.007 0.006 0.005 0.004 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.003 0.002 0.001 0 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Output Voltage vs. Temperature - VOUT = 5.14 V - XDFN Package Figure 8. Line Regulation vs. Temperature - VOUT = 1.8 V www.onsemi.com 4 NCP161 TYPICAL CHARACTERISTICS 0.010 REGLINE, LINE REGULATION (%/V) REGLINE, LINE REGULATION (%/V) 0.020 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.009 0.008 0.007 0.016 0.014 0.006 0.012 0.005 0.010 0.008 0.004 0.003 0.006 0.002 0.004 0.001 0 -40 -20 0 20 40 60 80 100 120 140 40 60 80 100 120 140 Figure 10. Line Regulation vs. Temperature - VOUT = 5.14 V 0.0014 0.0012 0.0010 0.0008 0.0006 VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF, COUT = 1 mF IOUT = 1 mA to 450 mA 0.0004 0.0002 0 -40 -20 0 20 40 60 80 100 120 REGLOAD, LOAD REGULATION (%/mA) REGLOAD, LOAD REGULATION (%/mA) 20 Figure 9. Line Regulation vs. Temperature - VOUT = 3.3 V 0.0016 0.0020 0.0018 0.0016 0.0014 0.0012 0.0010 0.0008 0.0006 VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF, COUT = 1 mF IOUT = 1 mA to 450 mA 0.0004 0.0002 0 140 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 11. Load Regulation vs. Temperature - VOUT = 1.8 V (WLCSP4) Figure 12. Load Regulation vs. Temperature - VOUT = 3.3 V (WLCSP4) REGLOAD, LOAD REGULATION (mV) 0.0020 0.0016 0 TJ, JUNCTION TEMPERATURE (C) 0.0018 0.0018 0.002 0 -40 -20 TJ, JUNCTION TEMPERATURE (C) 0.0020 REGLOAD, LOAD REGULATION (%/mA) VIN = 5.5 V VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 0.018 VIN = 5.5 V, COUT = 1 mF VOUT = 5.14 V, CIN = 1 mF IOUT = 1 mA to 450 mA 0.0014 0.0012 0.0010 0.0008 0.0006 0.0004 0.0002 0 -40 -20 0 20 40 60 80 100 120 140 70 IOUT = 1 mA to 450 mA 60 CIN = 1 mF SOT23-5 Package 50 40 30 XDFN4 Package 20 10 WLCSP4 Package 0 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 13. Load Regulation vs. Temperature - VOUT = 5.14 V (WLCSP4) Figure 14. Load Regulation vs. Temperature www.onsemi.com 5 NCP161 TYPICAL CHARACTERISTICS IGND, GROUND CURRENT (mA) 2.0 1.8 TJ = 125C 1.6 1.4 TJ = 25C 1.2 1.0 0.8 TJ = -40C 0.6 VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.4 0.2 0 0 50 100 150 200 250 300 350 400 450 500 IOUT, OUTPUT CURRENT (mA) 2.0 2.50 1.8 2.25 IGND, GROUND CURRENT (mA) IGND, GROUND CURRENT (mA) Figure 15. Ground Current vs. Load Current - VOUT = 1.8 V TJ = 125C 1.6 1.4 TJ = 25C 1.2 1.0 0.8 TJ = -40C 0.6 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.4 0.2 0 0 50 100 150 200 250 300 350 400 450 500 TJ = 25C 1.50 1.25 1.00 TJ = -40C 0.75 VIN = 5.5 V VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 0.50 0.25 0 0 50 100 150 200 250 300 350 400 450 500 IOUT, OUTPUT CURRENT (mA) Figure 16. Ground Current vs. Load Current - VOUT = 3.3 V Figure 17. Ground Current vs. Load Current - VOUT = 5.14 V 225 360 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 1.75 IOUT, OUTPUT CURRENT (mA) 400 TJ = 125C 320 280 TJ = 25C 240 200 TJ = -40C 160 120 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 80 40 0 TJ = 125C 2.00 0 50 100 150 200 250 300 350 400 200 175 TJ = 25C 150 125 100 TJ = -40C 75 50 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 25 0 450 500 TJ = 125C 0 50 100 150 200 250 300 350 400 450 500 IOUT, OUTPUT CURRENT (mA) IOUT, OUTPUT CURRENT (mA) Figure 18. Dropout Voltage vs. Load Current - VOUT = 1.8 V Figure 19. Dropout Voltage vs. Load Current - VOUT = 3.3 V www.onsemi.com 6 NCP161 TYPICAL CHARACTERISTICS 400 TJ = 125C 135 120 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 150 TJ = 25C 105 90 75 TJ = -40C 60 45 VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 30 15 0 0 50 100 150 200 250 300 350 400 450 500 320 IOUT = 450 mA 280 240 VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 200 160 120 80 40 0 -40 -20 IOUT = 0 mA 0 20 40 60 80 100 120 140 IOUT, OUTPUT CURRENT (mA) TJ, JUNCTION TEMPERATURE (C) Figure 20. Dropout Voltage vs. Load Current - VOUT = 5.14 V Figure 21. Dropout Voltage vs. Temperature- VOUT = 1.8 V 150 VDROP, DROPOUT VOLTAGE (mV) 250 225 IOUT = 450 mA 200 175 150 125 100 75 IOUT = 0 mA 50 VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 25 0 -40 -20 0 20 40 60 80 100 120 140 135 120 IOUT = 450 mA 105 90 IOUT = 0 mA 75 60 45 VOUT = 5.14 V CIN = 1 mF COUT = 1 mF 30 15 0 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 22. Dropout Voltage vs. Temperature- VOUT = 3.3 V Figure 23. Dropout Voltage vs. Temperature- VOUT = 5.14 V 500 VDROP, DROPOUT VOLTAGE (mV) VDROP, DROPOUT VOLTAGE (mV) 360 450 SOT23-5 Package XDFN4 Package 400 350 300 WLCSP4 Package 250 200 150 IOUT = 450 mA CIN = 1 mF COUT = 1 mF 100 50 0 -40 -20 0 20 60 40 80 100 120 TJ, JUNCTION TEMPERATURE (C) Figure 24. Dropout Voltage vs. Temperature VOUT = 1.8 V www.onsemi.com 7 140 NCP161 TYPICAL CHARACTERISTICS ISC, SHORT CIRCUIT CURRENT (mA) 750 730 720 710 700 690 680 660 650 -40 -20 VEN, ENABLE VOLTAGE THRESHOLD (V) VIN = 4.3 V VOUT = 90% VOUT(nom) CIN = 1 mF COUT = 1 mF 670 0 20 40 60 80 100 120 140 690 680 670 660 650 640 630 610 600 -40 -20 0.50 0.45 0.8 OFF -> ON 0.7 0.6 ON -> OFF 0.5 0.4 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.3 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120 140 40 60 80 100 120 140 0.40 0.35 0.30 0.25 0.20 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.15 0.10 0.05 0 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 27. Enable Threshold Voltage vs. Temperature Figure 28. Enable Current Temperature 300 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF RDIS, DISCHARGE RESISTIVITY 70 20 Figure 26. Short Circuit Current vs. Temperature 0.9 80 0 Figure 25. Current Limit vs. Temperature 1.0 90 VIN = 4.3 V VOUT = 0 V (Short) CIN = 1 mF COUT = 1 mF 620 TJ, JUNCTION TEMPERATURE (C) 100 IDIS, DISABLE CURRENT (nA) 700 TJ, JUNCTION TEMPERATURE (C) IEN, ENABLE PIN CURRENT (mA) ICL, CURRENT LIMIT (mA) 740 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120 140 290 280 270 260 250 240 230 VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 220 210 200 -40 -20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 29. Disable Current vs. Temperature Figure 30. Discharge Resistivity vs. Temperature www.onsemi.com 8 NCP161 TYPICAL CHARACTERISTICS OUTPUT VOLTAGE NOISE (nV/Hz) 10,000 IOUT = 450 mA IOUT = 250 mA 1000 IOUT = 10 mA IOUT = 1 mA 100 10 1 RMS Output Noise (mV) VIN = 2.8 V VOUT = 1.8 V CIN = 1 mF COUT = 1 mF 0.01 0.1 1 10 100 IOUT 10 Hz - 100 kHz 100 Hz - 100 kHz 1 mA 14.62 14.10 10 mA 11.12 10.48 250 mA 10.37 9.82 450 mA 10.22 9.62 1000 FREQUENCY (kHz) Figure 31. Output Voltage Noise Spectral Density - VOUT = 1.8 V OUTPUT VOLTAGE NOISE (nV/Hz) 10,000 IOUT = 250 mA IOUT = 450 mA 1000 IOUT = 10 mA IOUT = 1 mA 100 10 1 RMS Output Noise (mV) VIN = 4.3 V VOUT = 3.3 V CIN = 1 mF COUT = 1 mF 0.01 0.1 1 10 100 IOUT 10 Hz - 100 kHz 100 Hz - 100 kHz 1 mA 16.9 15.79 10 mA 12.64 11.13 250 mA 11.96 10.64 450 mA 11.50 10.40 1000 FREQUENCY (kHz) Figure 32. Output Voltage Noise Spectral Density - VOUT = 3.3 V www.onsemi.com 9 NCP161 TYPICAL CHARACTERISTICS 120 120 80 60 IOUT = 100 mA IOUT = 250 mA 20 0.01 0.1 1 10 100 1k IOUT = 20 mA 40 IOUT = 100 mA IOUT = 250 mA 20 IOUT = 450 mA 0.01 0.1 1 10 100 1k FREQUENCY (kHz) Figure 33. Power Supply Rejection Ratio, VOUT = 1.8 V Figure 34. Power Supply Rejection Ratio, VOUT = 3.3 V 10k 100 IOUT = 20 mA VIN = 5.5 V VOUT = 5.14 V COUT = 1 mF Unstable Operation 10 50 ESR (W) 60 IOUT = 10 mA 40 IOUT = 100 mA 30 1 Stable Operation IOUT = 250 mA 20 IOUT = 450 mA 0.01 0.1 1 10 100 1k 0.1 10k 0 50 100 150 200 250 300 350 400 450 500 FREQUENCY (kHz) IOUT, OUTPUT CURRENT (mA) Figure 35. Power Supply Rejection Ratio, VOUT = 5.14 V Figure 36. Stability vs. ESR VEN IINPUT VOUT 500 mV/div 0 60 FREQUENCY (kHz) 70 10 VIN = 3.6 V VOUT = 3.3 V COUT = 1 mF 80 0 10k IOUT = 10 mA 100 VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 200 mA/div 80 IOUT = 450 mA 1 V/div RR, RIPPLE REJECTION (dB) IOUT = 20 mA 40 90 500 mV/div RR, RIPPLE REJECTION (dB) 100 0 1 V/div VIN = 2.5 V VOUT = 1.8 V COUT = 1 mF 200 mA/div RR, RIPPLE REJECTION (dB) IOUT = 10 mA VEN IINPUT VOUT VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 100 ms/div 100 ms/div Figure 37. Enable Turn-on Response - COUT = 1 mF, IOUT = 10 mA Figure 38. Enable Turn-on Response - COUT = 1 mF, IOUT = 250 mA www.onsemi.com 10 NCP161 TYPICAL CHARACTERISTICS 500 mV/div 10 mV/div 2.3 V VIN VOUT VOUT = 1.8 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 3.8 V VIN VOUT VOUT = 3.3 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 20 ms/div 20 ms/div Figure 39. Line Transient Response - VOUT = 1.8 V Figure 40. Line Transient Response - VOUT = 3.3 V 5.5 V VIN VIN 5.3 V VOUT 1 V/div VOUT VOUT = 5.14 V, IOUT = 10 mA CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT = 2.8 V, CIN = 1 mF (MLCC) IOUT = 10 mA, COUT = 1 mF (MLCC) 4 ms/div Figure 42. Turn-on/off - Slow Rising VIN IOUT 200 mA/div 20 ms/div Figure 41. Line Transient Response - VOUT = 5.14 V tRISE = 1 ms 100 mV/div 100 mV/div 200 mA/div 10 mV/div 200 mV/div 10 mV/div 500 mV/div 4.8 V 3.3 V VOUT VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) IOUT tFALL = 1 ms VOUT VIN = 2.8 V, VOUT = 1.8 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 4 ms/div 20 ms/div Figure 43. Load Transient Response - 1 mA to 450 mA - VOUT = 1.8 V Figure 44. Load Transient Response - 450 mA to 1 mA - VOUT = 1.8 V www.onsemi.com 11 NCP161 TYPICAL CHARACTERISTICS 200 mA/div IOUT tRISE = 1 ms 100 mV/div 100 mV/div 200 mA/div IOUT VOUT VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) tFALL = 1 ms VOUT VIN = 4.3 V, VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 4 ms/div 20 ms/div Figure 45. Load Transient Response - 1 mA to 450 mA - VOUT = 3.3 V Figure 46. Load Transient Response - 450 mA to 1 mA - VOUT = 3.3 V VOUT VIN = 5.5 V, VOUT = 5.14 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) VOUT VIN = 5.5 V, VOUT = 5.14 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) 20 ms/div Figure 47. Load Transient Response - 1 mA to 450 mA - VOUT = 5.14 V Figure 48. Load Transient Response - 450 mA to 1 mA - VOUT = 5.14 V TSD Cycling 500 mV/div 500 mA/div tFALL = 1 ms 4 ms/div Short Circuit Event Overheating 1 V/div 200 mA/div tRISE = 1 ms 100 mV/div IOUT VEN IOUT VOUT Thermal Shutdown VOUT VIN = 5.5 V VOUT = 3.3 V CIN = 1 mF (MLCC) COUT = 1 mF (MLCC) COUT = 4.7 mF 1 V/div 100 mV/div 200 mA/div IOUT VIN = 3.8 V VOUT = 2.8 V CIN = 1 mF (MLCC) COUT = 1 mF 10 ms/div 400 ms/div Figure 49. Short Circuit and Thermal Shutdown Figure 50. Enable Turn-off www.onsemi.com 12 NCP161 APPLICATIONS INFORMATION General transient response or high frequency PSRR. It is not recommended to use tantalum capacitors on the output due to their large ESR. The equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. The NCP161 is an ultra-low noise 450 mA low dropout regulator designed to meet the requirements of RF applications and high performance analog circuits. The NCP161 device provides very high PSRR and excellent dynamic response. In connection with low quiescent current this device is well suitable for battery powered application such as cell phones, tablets and other. The NCP161 is fully protected in case of current overload, output short circuit and overheating. Enable Operation Input capacitor connected as close as possible is necessary for ensure device stability. The X7R or X5R capacitor should be used for reliable performance over temperature range. The value of the input capacitor should be 1 mF or greater to ensure the best dynamic performance. This capacitor will provide a low impedance path for unwanted AC signals or noise modulated onto constant input voltage. There is no requirement for the ESR of the input capacitor but it is recommended to use ceramic capacitors for their low ESR and ESL. A good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. The NCP161 uses the EN pin to enable/disable its device and to deactivate/activate the active discharge function. If the EN pin voltage is <0.4 V the device is guaranteed to be disabled. The pass transistor is turned-off so that there is virtually no current flow between the IN and OUT. The active discharge transistor is active so that the output voltage VOUT is pulled to GND through a 280 resistor. In the disable state the device consumes as low as typ. 10 nA from the VIN. If the EN pin voltage >1.2 V the device is guaranteed to be enabled. The NCP161 regulates the output voltage and the active discharge transistor is turned-off. The EN pin has internal pull-down current source with typ. value of 200 nA which assures that the device is turned-off when the EN pin is not connected. In the case where the EN function isn't required the EN should be tied directly to IN. Output Decoupling (COUT) Output Current Limit Input Capacitor Selection (CIN) The NCP161 requires an output capacitor connected as close as possible to the output pin of the regulator. The recommended capacitor value is 1 mF and X7R or X5R dielectric due to its low capacitance variations over the specified temperature range. The NCP161 is designed to remain stable with minimum effective capacitance of 0.7 mF to account for changes with temperature, DC bias and package size. Especially for small package size capacitors such as 0201 the effective capacitance drops rapidly with the applied DC bias. Please refer Figure 51. Output Current is internally limited within the IC to a typical 700 mA. The NCP161 will source this amount of current measured with a voltage drops on the 90% of the nominal VOUT. If the Output Voltage is directly shorted to ground (VOUT = 0 V), the short circuit protection will limit the output current to 690 mA (typ). The current limit and short circuit protection will work properly over whole temperature range and also input voltage range. There is no limitation for the short circuit duration. Thermal Shutdown When the die temperature exceeds the Thermal Shutdown threshold (TSD * 160C typical), Thermal Shutdown event is detected and the device is disabled. The IC will remain in this state until the die temperature decreases below the Thermal Shutdown Reset threshold (TSDU - 140C typical). Once the IC temperature falls below the 140C the LDO is enabled again. The thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. This protection is not intended to be used as a substitute for proper heat sinking. Power Dissipation As power dissipated in the NCP161 increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the Figure 51. Capacity vs DC Bias Voltage There is no requirement for the minimum value of Equivalent Series Resistance (ESR) for the COUT but the maximum value of ESR should be less than 2 . Larger output capacitors and lower ESR could improve the load www.onsemi.com 13 NCP161 ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP161 can handle is given by: P D [ V IN @ I GND ) I OUTV IN * V OUT (eq. 1) q JA 160 1.6 PD(MAX), TA = 25C, 2 oz Cu 150 PD(MAX), TA = 25C, 1 oz Cu 140 1.4 1.2 130 1.0 120 0.8 qJA, 1 oz Cu 110 0.6 0.4 100 qJA, 2 oz Cu 90 80 0 100 200 300 400 500 0.2 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (C/W) P D(MAX) + 125oC * T A The power dissipated by the NCP161 for given application conditions can be calculated from the following equations: 0 700 PCB COPPER AREA (mm2) 220 1.0 qJA, 1 oz Cu 210 0.9 200 0.8 qJA, 2 oz Cu 190 PD(MAX), TA = 25C, 2 oz Cu PD(MAX), TA = 25C, 1 oz Cu 180 0.7 0.6 170 0.5 160 0.4 150 0 100 200 300 400 PCB COPPER AREA (mm2) 500 600 Figure 53. qJA and PD (MAX) vs. Copper Area (XDFN4) www.onsemi.com 14 0.3 700 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (C/W) Figure 52. qJA and PD (MAX) vs. Copper Area (CSP4) (eq. 2) 0.7 325 PD(MAX), TA = 25C, 2 oz Cu 300 0.6 PD(MAX), TA = 25C, 1 oz Cu 275 0.5 250 0.4 qJA, 1 oz Cu 225 0.3 qJA, 2 oz Cu 200 0.2 175 150 0.1 0 100 200 300 400 PCB COPPER AREA (mm2) 500 600 PD(MAX), MAXIMUM POWER DISSIPATION (W) qJA, JUNCTION TO AMBIENT THERMAL RESISTANCE (C/W) NCP161 0 700 Figure 54. qJA and PD (MAX) vs. Copper Area (SOT23-5) Reverse Current Turn-On Time The PMOS pass transistor has an inherent body diode which will be forward biased in the case that VOUT > VIN. Due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. The turn-on time is defined as the time period from EN assertion to the point in which VOUT will reach 98% of its nominal value. This time is dependent on various application conditions such as VOUT(NOM), COUT, TA. Power Supply Rejection Ratio To obtain good transient performance and good regulation characteristics place CIN and COUT capacitors close to the device pins and make the PCB traces wide. In order to minimize the solution size, use 0402 or 0201 capacitors with appropriate capacity. Larger copper area connected to the pins will also improve the device thermal resistance. The actual power dissipation can be calculated from the equation above (Equation 2). Expose pad can be tied to the GND pin for improvement power dissipation and lower device temperature. PCB Layout Recommendations The NCP161 features very high Power Supply Rejection ratio. If desired the PSRR at higher frequencies in the range 100 kHz - 10 MHz can be tuned by the selection of COUT capacitor and proper PCB layout. www.onsemi.com 15 NCP161 ORDERING INFORMATION Device Nominal Output Voltage Description Marking Rotation NCP161AFCS180T2G 1.8 V A 180 NCP161AFCS250T2G 2.5 V D 180 NCP161AFCS270T2G 2.7 V V 180 NCP161AFCS280T2G 2.8 V E 180 NCP161AFCS285T2G 2.85 V F 180 NCP161AFCS300T2G 3.0 V J 180 NCP161AFCS320T2G 3.2 V T 180 NCP161AFCS330T2G 3.3 V K 180 NCP161AFCS350T2G 3.5 V L 180 NCP161AFCS450T2G 4.5 V P 180 NCP161AFCS500T2G 5.0 V R 180 NCP161AFCS514T2G 5.14 V Q 180 NCP161BFCS180T2G 1.8 V A 270 NCP161BFCS250T2G 2.5 V D 270 NCP161BFCS280T2G 2.8 V E 270 NCP161BFCS285T2G 2.85 V F 270 NCP161BFCS300T2G 3.0 V J 270 NCP161BFCS330T2G 3.3 V K 270 NCP161BFCS350T2G 3.5 V L 270 NCP161BFCS450T2G 4.5 V P 270 NCP161BFCS500T2G 5.0 V R 270 NCP161BFCS514T2G 5.14 V Q 270 NCP161AFCT180T2G 1.8 V A 180 NCP161AFCT185T2G 1.85 V V 180 NCP161AFCT250T2G 2.5 V D 180 NCP161AFCT280T2G 2.8 V E 180 NCP161AFCT285T2G 2.85 V F 180 NCP161AFCT290T2G 2.9 V T 180 NCP161AFCT300T2G 3.0 V J 180 NCP161AFCT310T2G 3.1 V 6 180 NCP161AFCT330T2G 3.3 V K 180 NCP161AFCT350T2G 3.5 V L 180 NCP161AFCT450T2G 4.5 V P 180 450 mA, Active Discharge 450 mA, Non-Active Discharge 450 mA, Active Discharge NCP161AFCT500T2G 5.0 V R 180 NCP161AFCT514T2G 5.14 V Q 180 NCP161AFCTC280T2G 2.8 V E 180 NCP161AFCTC350T2G 3.5 V L 180 NCP161BFCT180T2G 1.8 V A 270 NCP161BFCT185T2G 1.85 V V 270 NCP161BFCT250T2G 2.5 V D 270 NCP161BFCT280T2G 2.8 V E 270 NCP161BFCT285T2G 2.85 V F 270 NCP161BFCT300T2G 3.0 V J 270 NCP161BFCT330T2G 3.3 V K 270 NCP161BFCT350T2G 3.5 V L 270 NCP161BFCT450T2G 4.5 V P 270 NCP161BFCT500T2G 5.0 V R 270 NCP161BFCT514T2G 5.14 V Q 270 450 mA, Active Discharge, Backside Coating 450 mA, Non-Active Discharge *UBM = 180 mm (5 mm) www.onsemi.com 16 Package Shipping WLCSP4 CASE 567KA* (Pb-Free) 5000 / Tape & Reel WLCSP4 CASE 567KA* (Pb-Free) 5000 / Tape & Reel WLCSP4 CASE 567JZ (Pb-Free) 5000 / Tape & Reel WLCSP4 CASE 567JZ (Pb-Free) 5000 / Tape & Reel NCP161 ORDERING INFORMATION Device Nominal Output Voltage Description NCP161AMX180TBG 1.8 V DN NCP161AMX185TBG 1.85 V EY NCP161AMX250TBG 2.5 V DP NCP161AMX280TBG 2.8 V DQ NCP161AMX285TBG 2.85 V DR NCP161AMX300TBG 3.0 V NCP161AMX320TBG 3.2 V NCP161AMX330TBG 3.3 V DD NCP161AMX350TBG 3.5 V DU NCP161AMX450TBG 4.5 V DV NCP161AMX500TBG 5.0 V DX NCP161AMX514TBG 5.14 V DE NCP161BMX180TBG 1.8 V EN NCP161BMX250TBG 2.5 V EP NCP161BMX280TBG 2.8 V EQ NCP161BMX285TBG 2.85 V ER NCP161BMX300TBG 3.0 V NCP161BMX330TBG 3.3 V NCP161BMX350TBG 3.5 V EU NCP161BMX450TBG 4.5 V EV NCP161BMX500TBG 5.0 V EW NCP161BMX514TBG 5.14 V EE NCP161ASN180T1G 1.8 V JAF NCP161ASN250T1G 2.5 V JAA NCP161ASN280T1G 2.8 V JAC NCP161ASN300T1G 3.0 V NCP161ASN330T1G 3.3 V JAG NCP161ASN350T1G 3.5 V JAH NCP161ASN500T1G 5.0 V JAE 450 mA, Active Discharge 450 mA, Non-Active Discharge 450 mA, Active Discharge www.onsemi.com 17 Marking DT DZ ET ED JAD Package Shipping XDFN4 (Pb-Free) 3000 / Tape & Reel XDFN4 (Pb-Free) 3000 / Tape & Reel SOT23-5L (Pb-Free) 3000 / Tape & Reel MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT-23, 5 Lead CASE 527AH-01 ISSUE O D DATE 19 DEC 2008 SYMBOL E1 MIN NOM A 0.90 1.45 A1 0.00 0.15 A2 0.90 b 0.30 0.50 c 0.08 0.22 E 1.15 D 2.90 BSC E 2.80 BSC E1 1.60 BSC L 1.30 0.95 BSC e e 0.45 0.30 L1 PIN #1 IDENTIFICATION MAX 0.60 0.60 REF L2 0.25 REF 0 4 8 1 5 10 15 2 5 10 15 TOP VIEW 1 A2 A b 2 A1 SIDE VIEW L1 L2 L c END VIEW Notes: (1) All dimensions in millimeters. Angles in degrees. (2) Complies with JEDEC standard MO-178. DOCUMENT NUMBER: DESCRIPTION: 98AON34320E SOT-23, 5 LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP4, 0.64x0.64 CASE 567JZ ISSUE A SCALE 4:1 E E A E PIN A1 REFERENCE DATE 03 AUG 2016 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO SPHERICAL CROWNS OF SOLDER BALLS. B D DIM A A1 A2 b D E e TOP VIEW A2 0.05 C A 0.05 C NOTE 3 4X A1 SIDE VIEW SEATING PLANE RECOMMENDED SOLDERING FOOTPRINT* A1 PACKAGE OUTLINE e b 0.03 C A B C MILLIMETERS MIN NOM MAX --- --- 0.33 0.04 0.06 0.08 0.23 REF 0.195 0.210 0.225 0.610 0.640 0.670 0.610 0.640 0.670 0.35 BSC e B A 1 2 BOTTOM VIEW DOCUMENT NUMBER: DESCRIPTION: 98AON85781F WLCSP4, 0.64X0.64 0.35 PITCH 4X 0.20 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WLCSP4, 0.64x0.64 CASE 567KA ISSUE B SCALE 4:1 DATE 24 MAR 2020 GENERIC MARKING DIAGRAM* XM X M = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON85783F WLCSP4, 0.64X0.64 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS XDFN4 1.0x1.0, 0.65P CASE 711AJ ISSUE A 1 SCALE 4:1 PIN ONE REFERENCE 2X 0.05 C 4X A B D EE EE E 4X DETAIL A 0.05 C 2X TOP VIEW (A3) 0.05 C A 0.05 C NOTE 4 A1 SIDE VIEW e DETAIL A 4X 2 SEATING PLANE 1 XX = Specific Device Code M = Date Code 3 4X b 0.05 M *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. C A B NOTE 3 BOTTOM VIEW RECOMMENDED MOUNTING FOOTPRINT* 2X 0.65 PITCH 0.52 PACKAGE OUTLINE 4X MILLIMETERS MIN MAX 0.33 0.43 0.00 0.05 0.10 REF 0.15 0.25 0.02 0.12 1.00 BSC 0.43 0.53 1.00 BSC 0.65 BSC 0.20 0.30 0.07 0.17 L D2 4 DIM A A1 A3 b b2 D D2 E e L L2 XX M D2 45 5 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM THE TERMINAL TIPS. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. GENERIC MARKING DIAGRAM* e/2 1 b2 L2 DATE 13 NOV 2015 4X 0.39 0.11 4X 1.20 4X 0.24 0.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON67179E XDFN4, 1.0X1.0, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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