Switching and General Purpose Transistors Vero = 60-100 V 2N656 (siticon) P, = 1.0W o> ft. 2N657 (JAN 2N656 and 2N657 available) NPN silicon annular transistor designed for small- signal amplifier and general purpose switching appli- CASE 31 cations. (TO-5) MAXIMUM RATINGS Rating Symbol | 2N656 | 2N657 Unit Collector-Emitter Voltage Vero 60 100 Vdc Collector-Base Voltage Von 60 100 Vdc Emitter~Base Voltage Veep 8.0 Vdc Total Device Dissipation @ T, = 25C Py 1.0 Watt Derate above 25C 5.7 mWw/C Total Device Dissipation @ To = 25C Py 4.0 Waits Derate above 25C 22.8 mW/C Operating and Storage Junction Ty Tot -65 to +200 C Temperature Range 8 ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) | Characteristic Symbol | Min | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage BVoro Vdc I, = 250 pAdc, Ip = 0) 2N656 60 - 2N657 100 - Collector-Base Breakdown Voltage BVoBO Vdc (I, = 100 Adc, I. = 0) 2N656 60 - Cc E 2N657 100 ~ Emitter-Base Breakdown Voltage BVE RO Vde (I, = 250 yAdc, In = 0) 8.0 - Collector Cutoff Current lupo pAdc Vop = 30 Vdc, Ip = 0) - 10 ON CHARACTERISTICS DC Current Gain* hop* ~ Mg = 200 mAdc, Vor = 10 Vdc) 30 90 Collector-Emitter Saturation Voltage* Vor( oe Vdc (Ig = 200 mAdc, I, = 40 mAdc) sa - 4.0 SMALL-SIGNAL CHARACTERISTICS Input Impedance* h,,* k ohm a, = 8.0 mAdc, Vor = 10 Vdc) - 0.5 * Pulse Test: Pulse Length = 300 ys, Duty Cycle = 2.0%. 8-14