CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree's CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged PN: CGHV961 00F2 Package Type : 440217 package for optimal electrical and thermal performance. Typical Performance Over 8.4-9.6 GHz (TC = 25C) Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units Linear Gain 13.8 12.8 13.0 12.4 11.8 11.4 dB Output Power 171 163 160 150 137 131 W Power Gain 10.3 10.1 10.0 9.7 9.4 9.1 dB Power Added Efficiency 45.5 42.8 41.5 39.2 35.5 35.4 % Note: Measured in CGHV96100F2-TB (838179) under 100 S pulse width, 10% duty, Pin 42.0 dBm (16 W) ary 2020 Rev 3.0 - Janu Features Applications * 8.4 - 9.6 GHz Operation * Marine Radar * 145 W POUT typical * Weather Monitoring * 10 dB Power Gain * Air Traffic Control * 40% Typical PAE * Maritime Vessel Traffic Control * 50 Ohm Internally Matched * Port Security * <0.3 dB Power Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 120 Volts 25C Gate-source Voltage VGS -10, +2 Volts 25C Power Dissipation PDISS 222.0 Watts Pulsed Storage Temperature TSTG -65, +150 C Operating Junction Temperature TJ 225 C Maximum Drain Current1 IDMAX 12 Amps Maximum Forward Gate Current IGMAX 28.8 mA Soldering Temperature TS 245 C Screw Torque 40 in-oz RJC 0.73 C/W TC -40, +125 C 2 Thermal Resistance, Junction to Case Case Operating Temperature3 25C Pulse Width = 100 s, Duty Cycle = 10%, 85C, PDISS = 173 W Note: 1 Current limit for long term reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 9. Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25C) Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 28.8 mA Gate Quiscent Voltage VGS(Q) - -2.7 - V VDS = 40 V, ID = 1000 mA Saturated Drain Current2 IDS 20.7 28.8 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 100 - - V VGS = -8 V, ID = 28.8 mA Small Signal Gain S21 10.5 12.4 - dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm Input Return Loss 1 S11 - -5.2 -2.8 dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 8.4 - 9.4 GHz Input Return Loss 2 S11 - - -3.3 dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 9.4 - 9.6 GHz Output Return Loss S22 - -12.3 -6.0 dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm Power Output3,4 POUT 100 131.0 - W VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm Power Added Efficiency3,4 PAE 30 45 - % VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm PG - 10.2 - dB VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm VSWR - - 5:1 Y No damage at all phase angles, VDD = 40 V, IDQ = 1000 mA, DC Characteristics1 RF Characteristics3 Power Gain3,4 Output Mismatch Stress Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV96100F2-AMP (838179) under 100 S pulse width, 10% duty 4 Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB. Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf CGHV96100F2 Typical Performance Figure 1. - Small Signal Gain and Return Loss vs Frequency of CGHV96100F2 measured in CGHV96100F2-AMP VDS = 40 V, IDQ = 1000mA Figure 2. - Power Gain vs. Frequency and Input Power VDD = 40 V, Pulse Width = 100 sec, Duty Cycle = 10% Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf CGHV96100F2 Typical Performance Figure 3. - Output Power vs. Input Power VDD = 40 V, Pulse Width = 100 sec, Duty Cycle = 10% Figure 4. - Power Gain vs. Frequency and Input Power VDD = 40 V, Pulse Width = 100 sec, Duty Cycle = 10% Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf CGHV96100F2 Typical Performance Figure 5. - Power Added Efficiency vs. Input Power VDD = 40 V, Pulse Width = 100 sec, Duty Cycle = 10% Figure 6. - Output Power vs. Time VDD = 40 V, PIN = 41 dBm, Duty Cycle = 10% Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf CGHV96100F2 Typical Performance Figure 7. - Output Power vs. Input Power & Frequency VDD = 40 V, Pulse Width 100 sec, Duty Cycle = 10% Pout=vs. Freq. & Pin Pulse 100 us / 10 % duty 53.00 52.50 Output Power (dBm) 52.00 51.50 51.00 50.50 Pin 39 50.00 Pin 40 Pin 41 49.50 Pin 42 Psat 49.00 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 Frequency (GHz) Figure 8. - Power Added Efficiency vs. Input Power & Frequency PAE=vs. Freq. & Pin VDD = 40 V, Pulse Width 100 sec, Duty Cycle = 10% Pulse 100 us / 10 % duty 60 55 Power Added Efficiency (%) 50 45 40 35 30 Pin 39 25 Pin 40 Pin 41 20 Pin 42 Psat 15 10 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0 Frequency (GHz) Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf CGHV96100F2-AMP Demonstration Amplifier Circuit Bill of Materials Designator R1 Description Qty RES, 47 OHM +/-1%, 1/16 W, 0603, SMD 1 C1, C11 CAP, 1.6pF, +/- 0.1 pF, 200V, 0402, ATC 600L 2 C2, C12 CAP, 1.0pF, +/- 0.1 pF, 200V, 0402 ATC 600L 2 C3, C13 CAP, 10 pF +/-5%, 0603, ATC 2 C4, C14 CAP, 470 pF +/-5%, 100 V, 0603 2 C5, C15 CAP, 33,000 pF, 0805, 100 V, X7R 2 C6 CAP, 10 uF, 16 V, TANTALUM 1 C18 CAP, 470 uF +/-20%, ELECTROLYTIC 1 CONNECTOR, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST, 20MIL 2 J3 CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR, SMB, STRAIGHT JACK 1 - PCB, TEST FIXTURE, TACONICS RF35P, 20 MIL THK, 440210 PKG 1 - 2-56 SOC HD SCREW 1/4 SS 4 - #2 SPLIT LOCKWASHER SS 4 CGHV96100F2 1 J1,J2 Q1 CGHV96100F2-AMP Demonstration Amplifier Circuit Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf CGHV96100F2-AMP Demonstration Amplifier Circuit Schematic CGHV96100F2-AMP Demonstration Amplifier Circuit Outline Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf CGHV96100F2 Power Dissipation De-rating Curve Power dissipation derating curve vs. Max TCase CW & Pulse (100 uS/ 10% duty) 260 240 220 Power Dissipation (W) 200 180 Pulse 100uS / 10% 160 140 Note 1 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Maximum Case Temperature (C) 200 225 250 Note 1 : Shaded area exceeds Maximum Case Operating Temperature (See Page 2) CGHV96100F2 Transient Curve CGHV96100F 6 W/mm 1.2 1.1 ThetaJC ((C/W) 1 0.9 0.8 0.7 10% Duty Cycle 0.6 0.5 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 Time (sec) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf Product Dimensions CGHV96100F2 (Package Type -- 440217) Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf Part Number System CGHV96100F2 Package, Power Test Power Output (W) Upper Frequency (GHz) Cree GaN HEMT High Voltage Product Line Parameter Upper Frequency1 Power Output Package Value Units 9.6 GHz 100 W Flange - Table 1. Note : Alpha characters used in frequency code 1 indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV96100F2 GaN HEMT Each CGHV96100F2-AMP Test board with GaN HEMT Each CGHV96100F2-JMT CGHV96100F2 Delivered in a JEDEC Matrix tray 50 parts / tray. Order multiple = 50pcs Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 12 CGHV96100F2 Rev 3.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 rfsales@cree.com www.cree.com/rf Copyright (c) 2013 - 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 13 CGHV96100F2 Rev 3.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 rfsales@cree.com www.cree.com/rf