CGHV96100F2 - CREE - Datasheet.Live

Subject to change without notice.

www.cree.com/rf

CGHV96100F2

100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT

Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor

(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET

offers excellent power added efciency in comparison to other technologies. GaN

has superior properties compared to silicon or gallium arsenide, including higher

breakdown voltage, higher saturated electron drift velocity and higher thermal

conductivity. GaN HEMTs also offer greater power density and wider bandwidths

compared to GaAs transistors. This IM FET is available in a metal/ceramic anged

package for optimal electrical and thermal performance.

Rev 3.0 – January 2020

Typical Performance Over 8.4-9.6 GHz (TC = 25˚C)

Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units

Linear Gain 13.8 12.8 13.0 12.4 11.8 11.4 dB

Output Power 171 163 160 150 137 131 W

Power Gain 10.3 10.1 10.0 9.7 9.4 9.1 dB

Power Added Efciency 45.5 42.8 41.5 39.2 35.5 35.4 %

Note: Measured in CGHV96100F2-TB (838179) under 100 µS pulse width, 10% duty, Pin 42.0 dBm (16 W)

Features

• 8.4 - 9.6 GHz Operation

• 145 W POUT typical

• 10 dB Power Gain

• 40% Typical PAE

• 50 Ohm Internally Matched

• <0.3 dB Power Droop

Applications

• Marine Radar

• Weather Monitoring

• Air Trafc Control

• Maritime Vessel Trafc Control

• Port Security

PN: CGHV96100F2

Package Type: 440217

2CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

Absolute Maximum Ratings (not simultaneous)

Parameter Symbol Rating Units Conditions

Drain-source Voltage VDSS 120 Volts 25˚C

Gate-source Voltage VGS -10, +2 Volts 25˚C

Power Dissipation PDISS 222.0 Watts Pulsed

Storage Temperature TSTG -65, +150 ˚C

Operating Junction Temperature TJ225 ˚C

Maximum Drain Current1IDMAX 12 Amps

Maximum Forward Gate Current IGMAX 28.8 mA 25˚C

Soldering Temperature2TS245 ˚C

Screw Torque τ40 in-oz

Thermal Resistance, Junction to Case RθJC 0.73 ˚C/W Pulse Width = 100 µs, Duty Cycle = 10%, 85˚C, PDISS = 173 W

Case Operating Temperature3TC-40, +125 ˚C

Note:

1 Current limit for long term reliable operation.

2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library

3 See also, the Power Dissipation De-rating Curve on Page 9.

Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C)

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1

Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 28.8 mA

Gate Quiscent Voltage VGS(Q) – -2.7 – V VDS = 40 V, ID = 1000 mA

Saturated Drain Current2IDS 20.7 28.8 – A VDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage VBD 100 – – V VGS = -8 V, ID = 28.8 mA

RF Characteristics3

Small Signal Gain S21 10.5 12.4 – dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm

Input Return Loss 1 S11 – –5.2 -2.8 dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 8.4 - 9.4 GHz

Input Return Loss 2 S11 – – -3.3 dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm, 9.4 - 9.6 GHz

Output Return Loss S22 – –12.3 -6.0 dB VDD = 40 V, IDQ = 1000 mA, PIN = -20 dBm

Power Output3,4 POUT 100 131.0 – W VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm

Power Added Efciency3,4 PAE 30 45 – % VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm

Power Gain3,4 PG– 10.2 – dB VDD = 40 V, IDQ = 1000 mA, PIN = 41.75 dBm

Output Mismatch Stress VSWR – – 5:1 YNo damage at all phase angles, VDD = 40 V, IDQ = 1000 mA,

Notes:

1 Measured on-wafer prior to packaging.

2 Scaled from PCM data.

3 Measured in CGHV96100F2-AMP (838179) under 100 µS pulse width, 10% duty

4 Fixture loss de-embedded using the following offsets: Frequency = 9.6 GHz. Input = 0.5 dB and Output = 0.5 dB.

3CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

CGHV96100F2 Typical Performance

Figure 1. - Small Signal Gain and Return Loss vs Frequency

of CGHV96100F2 measured in CGHV96100F2-AMP

VDS = 40 V, IDQ = 1000mA

Figure 2. - Power Gain vs. Frequency and Input Power

VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%

4CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

CGHV96100F2 Typical Performance

Figure 3. - Output Power vs. Input Power

VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%

Figure 4. - Power Gain vs. Frequency and Input Power

VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%

5CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

CGHV96100F2 Typical Performance

Figure 5. - Power Added Efciency vs. Input Power

VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%

Figure 6. - Output Power vs. Time

VDD = 40 V, PIN = 41 dBm, Duty Cycle = 10%

6CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

CGHV96100F2 Typical Performance

Figure 7. - Output Power vs. Input Power & Frequency

VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%

Figure 8. - Power Added Efciency vs. Input Power & Frequency

VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10%

49.00

49.50

50.00

50.50

51.00

51.50

52.00

52.50

53.00

7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0

Output Power (dBm)

Frequency (GHz)

Pout vs. Freq. & Pin

Pulse 100 us / 10 % duty

Pin 39

Pin 40

Pin 41

Pin 42

Psat

7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 9.2 9.4 9.6 9.8 10.0

Power Added Efficiency (%)

Frequency (GHz)

PAE vs. Freq. & Pin

Pulse 100 us / 10 % duty

Pin 39

Pin 40

Pin 41

Pin 42

Psat

7CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

CGHV96100F2-AMP Demonstration Amplier Circuit Bill of Materials

Designator Description Qty

R1 RES, 47 OHM +/-1%, 1/16 W, 0603, SMD 1

C1, C11 CAP, 1.6pF, +/- 0.1 pF, 200V, 0402, ATC 600L 2

C2, C12 CAP, 1.0pF, +/- 0.1 pF, 200V, 0402 ATC 600L 2

C3, C13 CAP, 10 pF +/-5%, 0603, ATC 2

C4, C14 CAP, 470 pF +/-5%, 100 V, 0603 2

C5, C15 CAP, 33,000 pF, 0805, 100 V, X7R 2

C6 CAP, 10 uF, 16 V, TANTALUM 1

C18 CAP, 470 uF +/-20%, ELECTROLYTIC 1

J1,J2 CONNECTOR, SMA, PANEL MOUNT JACK, FLANGE,

4-HOLE, BLUNT POST, 20MIL 2

J3 CONNECTOR, HEADER, RT>PLZ .1CEN LK 9POS 1

J4 CONNECTOR, SMB, STRAIGHT JACK 1

-PCB, TEST FIXTURE, TACONICS RF35P, 20 MIL THK,

440210 PKG 1

- 2-56 SOC HD SCREW 1/4 SS 4

- #2 SPLIT LOCKWASHER SS 4

Q1 CGHV96100F2 1

CGHV96100F2-AMP Demonstration Amplier Circuit

8CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

CGHV96100F2-AMP Demonstration Amplier Circuit Schematic

CGHV96100F2-AMP Demonstration Amplier Circuit Outline

9CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

CGHV96100F2 Power Dissipation De-rating Curve

Note 1 : Shaded area exceeds Maximum Case Operating Temperature (See Page 2)

CGHV96100F2 Transient Curve

Electrostatic Discharge (ESD) Classications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C

0.8

0.9

1.1

1.2

ThetaJC (

⁰

C/W)

CGHV96100F

6 W/mm

0.5

0.6

0.7

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00

ThetaJC (

Time (sec)

10% Duty Cycle

100

120

140

160

180

200

220

240

260

0 25 50 75 100 125 150 175 200 225 250

Power Dissipation (W)

Maximum Case Temperature (C)

Power dissipation derating curve vs. Max TCase

CW & Pulse (100 uS/ 10% duty)

Pulse 100uS / 10%

Note 1

10 CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

Product Dimensions CGHV96100F2 (Package Type — 440217)

11 CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

Part Number System

Parameter Value Units

Upper Frequency19.6 GHz

Power Output 100 W

Package Flange -

Table 1.

Note1: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code Code Value

A 0

B 1

C 2

D 3

E 4

F 5

G 6

H 7

J 8

K 9

Examples: 1A = 10.0 GHz

2H = 27.0 GHz

Table 2.

Package, Power Test

Power Output (W)

Upper Frequency (GHz)

Cree GaN HEMT High Voltage

Product Line

CGHV96100F2

12 CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

Product Ordering Information

Order Number Description Unit of Measure Image

CGHV96100F2 GaN HEMT Each

CGHV96100F2-AMP Test board with GaN HEMT Each

CGHV96100F2-JMT CGHV96100F2 Delivered in a JEDEC

Matrix tray

50 parts / tray.

Order multiple = 50pcs

13 CGHV96100F2 Rev 3.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

rfsales@cree.com

www.cree.com/rf

registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specic

product and/or vendor endorsement, sponsorship or association.

Disclaimer

Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties

which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes

no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the

average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in

different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical

experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for

surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal

injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE

logo are registered trademarks of Cree, Inc.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

rfsales@cree.com