SEMITRANS®2N
Ultra Fast IGBT Module
SKM 100GB125DN
Features
! " # $%
&$' & $ '
(
)*+ ,
)-+ ,
Typical Applications*
. -+ /0
1 # *++ /0
#
2 . -+ /0
GB
Absolute Maximum Ratings (3 -4 5$
Symbol Conditions Values Units
IGBT
6$2 (73 -4 5$ *-++ 6
$(73 *4+ 5$ ( 3 -4 5$ *++ %
( 3 94 5$ 9+ %
$1: $1:3- $ *4+ %
6;2 < -+ 6
6$$ 3 ++ 6= 6;2 > -+ 6=
6$2 ? *-++ 6
(73 *-4 5$ *+ @
Inverse Diode
!(73 *4+ 5$ ( 3 -4 5$ A4 %
( 3 9+ 5$ 4 %
!1: !1:3- ! *4+ %
!: 3 *+ = B (73 *4+ 5$ C-+ %
Module
)1:, -++ %
(#7 D E+ BBB F *4+ 5$
( *-4 5$
6 %$ * B E+++ 6
Characteristics (3 -4 5$
Symbol Conditions min. typ. max. Units
IGBT
6;2), 6;2 3 6$2 $3 - % E4 44 4 6
$2 6;2 3+66$2 3 6$2 (73 -4 5$ +*4 +E4 %
(73 *-4 5$ %
6$2+ (73 -4 5$ 6
(73 *-4 5$ 6
$2 6;2 3 *4 6 (73 -45$ G
(73 *-45$ G
6$2), $ 3 C4 % 6;2 3 *4 6 (73 5$#B HH H94 6
$ 4 !
$ 6$2 3 -4 6;2 3 + 6 3 * :0 +C- +A !
$ +H9 +4 !
I;6;2 3 + D F-+6 4+ $
1; (73 5$ 4 J
), 9+
1; 3 9 G 6$$ 3 ++6 E+
2 $3 C4% A K
), 1; 3 9 G (73 *-4 5$ H+
6;2 3 < *46 -+
2 H4 K
1)7D, ;'( +*9 LMN
SKM 100GB125DN
1 21-05-2007 RAA © by SEMIKRON
http://store.iiic.cc/
SEMITRANS®2N
Ultra Fast IGBT Module
SKM 100GB125DN
Features
! " # $%
&$' & $ '
(
)*+ ,
)-+ ,
Typical Applications*
. -+ /0
1 # *++ /0
#
2 . -+ /0
GB
Characteristics
Symbol Conditions min. typ. max. Units
Inverse Diode
6!3 62$ ! 3 C4 %= 6;2 3 + 6 (73 -4 5$#B - -4 6
(73 *-4 5$#B *9 6
6!+ (73 5$ ** *- 6
!(73 5$ *- *CH G
11: !3 C4 % (73 *-4 5$ 4+ %
I M 3 9++ %M@ **4 @$
2 6;2 3+6=6$$ 3 ++ 6 K
1)7D,& +4 LMN
Module
$2 -+ -4
1$$OF22O B D (3 -4 5$ +C4 G
(3 *-4 5$ * G
1)D, ++4 LMN
: / : H 4
: :4 -4 4
*+
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
SKM 100GB125DN
2 21-05-2007 RAA © by SEMIKRON
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SEMITRANS®2N
Ultra Fast IGBT Module
SKM 100GB125DN
Features
! " # $%
&$' & $ '
(
)*+ ,
)-+ ,
Typical Applications*
. -+ /0
1 # *++ /0
#
2 . -+ /0
GB
Zth
Symbol Conditions Values Units
Zth(j-c)l
1 3 * A4 /MN
1 3 - 4 /MN
1 3 H *C4 /MN
1 3 E -4 /MN
3 * ++H-C
3 - +++9
3 H +++*C
3 E +++9
Zth(j-c)D
1 3 * H++ /MN
1 3 - *+ /MN
1 3 H H /MN
1 3 E E /MN
3 * ++4E
3 - +++*
3 H +++*4
3 E +*
SKM 100GB125DN
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Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SKM 100GB125DN
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Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge
SKM 100GB125DN
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UL Recognized File 63 532
$ & AH
;' $ & AH
SKM 100GB125DN
6 21-05-2007 RAA © by SEMIKRON
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