WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 1 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
I/O8
I/O9
I/O10
A14
A16
A11
A0
A18
I/O0
I/O1
I/O2
FWE2#
SWE2#
GND
I/O11
A10
A9
A15
VCC
FCS#
SCS#
I/O3
I/O15
I/O14
I/O13
I/O12
OE#
A17
FWE1#
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A7
A12
SWE1#
A13
A8
I/O16
I/O17
I/O18
VCC
SWE4#
FWE4#
I/O27
A4
A5
A6
FWE3#
SWE3#
GND
I/O19
I/O31
I/O30
I/O29
I/O28
A1
A2
A3
I/O23
I/O22
I/O21
I/O20
11 22 33 44 55 66
1
12
23
3
4 45 5
6
512KX32 SRAM / FLASH MODULE
FEATURES
Access Times of 25ns (SRAM) and 70, 90ns (FLASH)
Packaging
• 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic
HIP (Package 402)
• 68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square
(Package 509) 4.57mm (0.180") height. Designed to
fi t JEDEC 68 lead 0.990" CQFJ footprint (Figure 2).
Package to be developed.
512Kx32 SRAM
512Kx32 5V Flash
Organized as 512Kx32 of SRAM and 512Kx32 of Flash
Memory with common Data Bus
Low Power CMOS
Commercial, Industrial and Military Temperature Ranges
TTL Compatible Inputs and Outputs
Built in Decoupling Caps and Multiple Ground Pins for Low
Noise Operation
Weight - 13 grams typical
FLASH MEMORY FEATURES
100,000 Erase/Program Cycles
Sector Architecture
• 8 equal size sectors of 64KBytes each
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
5 Volt Programming; 5V ± 10% Supply
Embedded Erase and Program Algorithms
Hardware Write Protection
Page Program Operation and Internal Program Control
Time.
* This product is subject to change without notice.
Note: Programming information available upon request.
Figure 1 – PIN CONFIGURATION FOR
WSF512K32-29H2X PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
SWE1-4# SRAM Write Enables
SCS# SRAM Chip Select
OE# Output Enable
VCC Power Supply
GND Ground
NC Not Connected
FWE1-4# Flash Write Enables
FCS# Flash Chip Select
BLOCK DIAGRAM
OE#
FCS#
SCS#
A
0-18
FWE
1
#
S
WE
1
#
512K x 8 Flash
512K x 8 SRAM
I/O0-7
FWE
2
#
S
WE
2
#
512K x 8 Flash
512K x 8 SRAM
I/O8-15
FWE
3
#
S
WE
3
#
512K x 8 Flash
512K x 8 SRAM
I/O16-23
FWE
4
#
S
WE
4
#
512K x 8 Flash
512K x 8 SRAM
I/O24-31
TOP VIEW
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 2 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
I/O
7
GND
I/O
8
I/O
9
I/O
10
I/O
11
I/O
12
I/O
13
I/O
14
I/O
15
V
CC
A
11
A
12
A
13
A
14
A
15
A
16
FCS#
OE#
SWE
2
#
A
17
FWE
2
#
FWE
3
#
FWE
4
#
A
18
SCS#
SWE
1
#
I/O
16
I/O
17
I/O
18
I/O
19
I/O
20
I/O
21
I/O
22
I/O
23
GND
I/O
24
I/O
25
I/O
26
I/O
27
I/O
28
I/O
29
I/O
30
I/O
31
NC
A
0
A
1
A
2
A
3
A
4
A
5
SWE
3
#
GND
SWE
4
#
FWE
1
#
A
6
A
7
A
8
A
9
A
10
V
CC
FIGURE 2 – PIN CONFIGURATION FOR
WSF512K32-29G2TX
BLOCK DIAGRAM
PIN DESCRIPTION
I/O0-31 Data Inputs/Outputs
A0-18 Address Inputs
SWE1-4# SRAM Write Enables
SCS# SRAM Chip Select
OE# Output Enable
VCC Power Supply
GND Ground
NC Not Connected
FWE1-4# Flash Write Enables
FCS# Flash Chip Select
OE#
FCS#
SCS#
A
0-18
FWE
1
#
S
WE
1
#
512K x 8 Flash
512K x 8 SRAM
I
/O0
-7
FWE
2
#
S
WE
2
#
512K x 8 Flash
512K x 8 SRAM
I
/O8
-1
5
FWE
3
#
S
WE
3
#
512K x 8 Flash
512K x 8 SRAM
I
/O
1
6
-2
3
FWE
4
#
S
WE
4
#
512K x 8 Flash
512K x 8 SRAM
I
/O
24-
3
1
TOP VIEW
The Microsemi 68 lead G2T CQFP fi lls the same fi t and function as the
JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead
inspection advantage of the CQFP form.
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 3 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
SRAM TRUTH TABLE
SCS# OE# SWE# Mode Data I/O Power
H X X Standby High Z Standby
L L H Read Data Out Active
L H H Read High Z Active
L X L Write Data In Active
NOTE:
1. FCS# must remain high when SCS# is low.
CAPACITANCE
Ta = +25°C
Parameter Symbol Conditions Max Unit
OE# capacitance COE
VIN = 0 V, f = 1.0 MHz
80 pF
F/S WE1-4# capacitance CWE
VIN = 0 V, f = 1.0 MHz
30 pF
F/S CS# capacitance CCS
VIN = 0 V, f = 1.0 MHz
50 pF
D0-31 capacitance CI/O
VI/O = 0 V, f = 1.0 MHz
30 pF
A0-18 capacitance CAD
VIN = 0 V, f = 1.0 MHz
80 pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Min Max Unit
Operating Temperature TA-55 +125 °C
Storage Temperature TSTG -65 +150 °C
Signal Voltage Relative to GND VG-0.5 7.0 V
Junction Temperature TJ150 °C
Supply Voltage VCC -0.5 7.0 V
Parameter
Flash Data Retention 20 years
Flash Endurance (write/erase cycles) 100,000
NOTE:
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC + 0.3 V
Input Low Voltage VIL -0.5 +0.8 V
DC CHARACTERISTICS
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
Parameter Symbol Conditions Min Max Unit
Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 μA
Output Leakage Current ILO SCS# = VIH, OE# = VIH, VOUT = GND to VCC 10 μA
SRAM Operating Supply Current x 32 Mode ICCx32 SCS# = VIL, OE# = FCS# = VIH, f = 5MHz, VCC = 5.5 550 mA
Standby Current ISB FCS# = SCS# = VIH, OE# = VIH, f = 5MHz, VCC = 5.5 90 mA
SRAM Output Low Voltage VOL IOL = 6mA, VCC = 4.5 0.4 V
SRAM Output High Voltage VOH IOH = -4.0mA, VCC = 4.5 2.4 V
Flash VCC Active Current for Read (1) ICC1 FCS# = VIL, OE# = SCS# = VIH 250 mA
Flash VCC Active Current for Program or Erase (2) ICC2 FCS# = VIL, OE# = SCS# = VIH 300 mA
Flash Output Low Voltage VOL IOL = 8.0mA, VCC = 4.5 0.45 V
Flash Output High Voltage VOH1 IOH = -2.5 mA, VCC = 4.5 0.85 x VCC V
Flash Output High Voltage VOH2 IOH = -100 μA, VCC = 4.5 VCC -0.4 V
Flash Low VCC Lock Out Voltage VLKO 3.2 4.2 V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2mA/MHz, with OE# at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 4 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
I
Current Source
D.U.T.
C = 50 pf
eff
I
OL
V ≈ 1.5V
(Bipolar Supply)
Z
Current Source
OH
FIGURE 3 – AC TEST CIRCUIT
SRAM AC CHARACTERISTICS
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter
Read Cycle Symbol -25 Units
Min Max
Read Cycle Time tRC 25 ns
Address Access Time tAA 25 ns
Output Hold from Address Change tOH 0ns
Chip Select Access Time tACS 25 ns
Output Enable to Output Valid tOE 15 ns
Chip Select to Output in Low Z tCLZ13ns
Output Enable to Output in Low Z tOLZ10ns
Chip Disable to Output in High Z tCHZ112 ns
Output Disable to Output in High Z tOHZ112 ns
1. This parameter is guaranteed by design but not tested.
SRAM AC CHARACTERISTICS
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter
Write Cycle Symbol -25 Units
Min Max
Write Cycle Time tWC 25 ns
Chip Select to End of Write tCW 20 ns
Address Valid to End of Write tAW 20 ns
Data Valid to End of Write tDW 15 ns
Write Pulse Width tWP 20 ns
Address Setup Time tAS 3ns
Address Hold Time tAH 0ns
Output Active from End of Write tOW13ns
Write Enable to Output in High Z tWHZ115 ns
Data Hold from Write Time tDH 0ns
1. This parameter is guaranteed by design but not tested.
AC TEST CONDITIONS
Parameter Typ Unit
Input Pulse Levels VIL = 0, VIH = 3.0 V
Input Rise and Fall 5 ns
Input and Output Reference Level 1.5 V
Output Timing Reference Level 1.5 V
NOTES:
VZ is programmable from -2V to +7V.
IOL & IOH programmable from 0 to 16mA.
Tester Impedance Z0 = 75 Ω.
VZ is typically the midpoint of VOH and VOL.
IOL & IOH are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 5 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
A
DDRESS
DATA I/O
tAW
tAS tCW
tAH
tWP
tDH
tDW
tWC
SCS#
SWE#
DATA VALID
FIGURE 6 – SRAM WRITE CYCLE - SCS# CONTROLLED
WRITE CYCLE 2, SCS# CONTROLLED (FCS# = VIH)
FIGURE 4 – SRAM TIMING WAVEFORM - READ CYCLE
A
DDRESS
DATA I/O
tAA
tOH
tRC
DATA VALIDPREVIOUS DATA VALID
READ CYCLE 1, (SCS# = OE# = VIL, SWE# = FCS# = VIH) READ CYCLE 2, (SWE# = FCS# = VIH)
A
DDRESS
DATA I/O
tAA
tACS
tOE
tCLZ
tOLZ
tOHZ
tRC
DATA VALID
HIGH IMPEDANCE
SCS#
SOE#
tCHZ
FIGURE 5 – SRAM WRITE CYCLE - SWE# CONTROLLED
WRITE CYCLE 1, SWE# CONTROLLED (FCS# = VIH)
A
DDRESS
DATA I/O
tAW
tCW
tAH
tWP
tDW
tWHZ
tAS
tOW
tDH
tWC
DATA VALID
SCS#
SWE#
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 6 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FWE# CONTROLLED
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter Symbol -70 -90 Unit
Min Max Min Max
Write Cycle Time tAVAV tWC 70 90 ns
Chip Select Setup Time tELWL tCS 00ns
Write Enable Pulse Width tWLWH tWP 45 45 ns
Address Setup Time tAVWL tAS 00ns
Data Setup Time tDVWH tDS 45 45 ns
Data Hold Time tWHDX tDH 00ns
Address Hold Time tWLAX tAH 45 45 ns
Write Enable Pulse Width High tWHWL tWPH 20 20 ns
Duration of Byte Programming Operation (1) tWHWH1 300 300 μs
Chip and Sector Erase Time (2) tWHWH2 15 15 sec
Read Recovery Time Before Write tGHWL 00μs
VCC Set-up Time tVCS 50 50 μs
Chip Programming Time 11 11 sec
Output Enable Setup Time tOES 00ns
Output Enable Hold Time (4) tOEH 10 10 ns
Chip Erase Time (3) 64 64 sec
NOTES:
1. Typical value for twhwh1 is 7ns.
2. Typical value for twhwh2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
4. For Toggle and Data# Polling.
FLASH AC CHARACTERISTICS – READ ONLY OPERATIONS
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter Symbol -70 -90 Unit
Min Max Min Max
Read Cycle Time tAVAV tRC 70 90 ns
Address Access Time tAVQV tACC 70 90 ns
Chip Select Access Time tELQV tCE 70 90 ns
OE# to Output Valid tGLQV tOE 35 35 ns
Chip Select to Output High Z (1) tEHQZ tDF 20 20 ns
OE# High to Output High Z (1) tGHQZ tDF 20 20 ns
Output Hold from Address, FCS# or OE# Change, whichever is fi rst tAXQX tOH 00ns
1. Guaranteed by design, not tested.
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 7 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
FLASH AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS, FCS# CONTROLLED
VCC = 5.0V, -55°C ≤ TA ≤ +125°C
Parameter Symbol -70 -90 Unit
Min Max Min Max
Write Cycle Time tAVAV tWC 70 90 ns
FWE# Setup Time tWLEL tWS 00ns
FCS# Pulse Width tELEH tCP 45 45 ns
Address Setup Time tAVEL tAS 00ns
Data Setup Time tDVEH tDS 45 45 ns
Data Hold Time tEHDX tDH 00ns
Address Hold Time tELAX tAH 45 45 ns
FCS# Pulse Width High tEHEL tCPH 20 20 ns
Duration of Programming Operation (1) tWHWH1 300 300 μs
Sector Erase Time (2) tWHWH2 15 15 sec
Read Recovery Time tGHEL 00ns
Chip Programming Time 11 sec
Chip Erase Time (3) 64 sec
NOTES:
1. Typical value for tWHWH1 is 7ns.
2. Typical value for tWHWH2 is 1sec.
3. Typical value for Chip Erase Time is 8sec.
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 8 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
FIGURE 7 – AC WAVEFORMS FOR FLASH MEMORY READ OPERATIONS
A
ddresses
FCS#
OE#
FWE#
Outputs High Z
Addresses Stable
tOE
tRC
Output Valid
tCE
tACC
tOH
High Z
tDF
NOTE: SCS# = VIH
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 9 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
A
ddresses
FCS#
OE#
FWE#
Data
5.0 V
5555H PA PA
tWC
tCS
PD D7# DOUT
tAH
tWPH
tDH
tDS
Data# Polling
tAS tRC
tWP
A0H
tOE tDF
tOH
tCE
tGHWL
tWHWH1
FIGURE 8 – WRITE/ERASE/PROGRAM OPERATION, FLASH MEMORY FWE# CONTROLLED
NOTES:
1. PA is the address of the memory location to be programmed.
2. PD is the data to be programmed at byte address.
3. D7# is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates last two bus cycles of four bus cycle sequence.
6. SCS# = VIH
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 10 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
ddresses
FCS#
OE#
FWE#
Data
VCC
5555H 2AAAH 2AAAH SA 5555H 5555H
tWP
tCS
tVCS
10H/30H 55H 80H 55H AAH AAH
tAH
tAS
tGHWL
tWPH
tDH
tDS
FIGURE 9 – AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS FOR FLASH MEMORY
NOTES:
1. SA is the sector address for Sector Erase.
2. SCS# = VIH
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 11 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
FCS#
OE#
FWE#
tOE
tOE
D7 D7
Valid Data
tCE
tCH
tOH
High Z
D7# D7 =
Valid Data
High Z
D0-D6 = Invalid D0-D7
Valid Data
tDF
D7
D7
D0-D6
tOEH
tWHWH 1 or 2
tWHWH 1 or 2
FIGURE 10 – AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS FOR
FLASH MEMORY
NOTE: SCS# = VIH
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 12 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
A
ddresses
FWE#
OE#
FCS#
Data
5.0 V
5555H PA PA
tWC
tWS
PD D7# DOUT
tAH
tCPH
tCP
tDH
tDS
Data# Polling
tAS
tGHEL
A0H
tWHWH1
FIGURE 11 – WRITE/ERASE/PROGRAM OPERATION FOR FLASH MEMORY, CS# CONTROLLED
NOTES:
1. PA represents the address of the memory location to be programmed.
2. PD represents the data to be programmed at byte address.
3. D7# is the output of the complement of the data written to the device.
4. DOUT is the output of the data written to the device.
5. Figure indicates the last two bus cycles of a four bus cycle sequence.
6. SCS# = VIH
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 13 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
0.38 (0.015) ± 0.05 (0.002)
0.27 (0.011) ± 0.04 (0.002)
25.15 (0.990) ± 0.26 (0.010) SQ
1.27 (0.050) TYP
24.03 (0.946)
± 0.26 (0.010)
22.36 (0.880) ± 0.26 (0.010) SQ
20.3 (0.800) REF
4.57 (0.180) MAX
0.19 (0.007)
± 0.06 (0.002)
23.87
(0.940) REF
1.0 (0.040)
± 0.127 (0.005)
0.25 (0.010) REF
1° / 7°
R 0.25
(0.010)
DETAIL A
SEE DETAIL "A"
Pin 1
PACKAGE 509 – 68 LEAD, CERAMIC QUAD FLAT PACK, CQFP (G2T)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
The Microsemi 68 lead G2T CQFP fi lls the same fi t and function as the
JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead
inspection advantage of the CQFP form.
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 14 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
PACKAGE 402 – 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H2)
35.2 (1.385) ± 0.38 (0.015) SQ
25.4 (1.0) TYP
15.24 (0.600) TYP
0.76 (0.030) ± 0.1 (0.005)
5.7 (0.223)
MAX
3.81 (0.150)
± 0.1 (0.005)
2.54 (0.100)
TYP
25.4 (1.0) TYP
1.27 (0.050) ± 0.1 (0.005)
1.27 (0.050) TYP DIA
0.46 (0.018) ± 0.05 (0.002) DIA
PIN 1 IDENTIFIER
SQUARE PAD
ON BOTTOM
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 15 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
ORDERING INFORMATION
MICROSEMI CORPORATION
SRAM
FLASH
ORGANIZATION, 512K x 32 SRAM AND FLASH
ACCESS TIME (ns)
29 = 25ns SRAM and 90ns FLASH
PACKAGE TYPE:
H2 = Ceramic Hex In-line Package, HIP (Package 402)
G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509)
DEVICE GRADE:
M = Military Screened -55°C to +125°C
I = Industrial -40°C to +85°C
C = Commercial 0°C to +70°C
LEAD FINISH:
Blank = Gold plated leads
A = Solder dip leads
W S F 512K32 - 29 X X X
WSF512K32-XXX
August 2011 © 2011 Microsemi Corporation. All rights reserved. 16 Microsemi Corporation • (602) 437-1520 • www.whiteedc.com
Rev. 10 www.microsemi.com
Microsemi Corporation reserves the right to change products or specifi cations without notice.
Document Title
512Kx32 SRAM / FLASH MODULE
Revision History
Rev # History Release Date Status
Rev 10 Changes (Pg. 1-16)
10.1 Change document layout from White Electronic Designs to Microsemi
10.2 Add document Revision History page
August 2011 Final