VISHAY
TEMT6000
Document Number 81579
Rev. 1.2, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
18527
Ambient Light Sensor
Description
TEMT6000 is a silicon NPN epitaxial planar pho-
totransistor in a miniature transparent mold for sur-
face mounting onto a printed circuit board. The device
is sensitive to the visible spectrum.
Features
Adapted to human eye responsivity
Wide angle of half sensitivity ϕ = ± 6
SMD style package on PCB technology
Suitable for IR reflow soldering
Lead free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/9 6/E C
Applications
Ambient light sensor for display backlight dimming in:
Mobile phones
Notebook computers
PDA’s
Cameras
Dashboards
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Collector Emitter Voltage VCEO 6V
Emitter Collector Voltage VECO 1.5 V
Collector current IC20 mA
Total Power Dissipation Tamb 55 °C Ptot 100 mW
Junction Temperature Tj100 °C
Operating Te mperature Range Tamb - 40 to + 85 °C
Storage Tem perature Range Tstg - 40 to + 85 °C
Soldering Temperature t 3 s Tsd 260 °C
Ther ma l Resistance Junction/
Ambient RthJA 450 K/W
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2Document Number 81579
Rev. 1.2, 08-Jul-04
VISHAY
TEMT6000
Vishay Semiconductors
Basic Characterist ics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Min Typ. Max Unit
Collector Emitter Breakdown
Voltage IC = 0.1 mA VCEO 6V
Collector dark current VCE = 5 V, E = 0 ICEO 350nA
Collector-emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 16 pF
Collector Light Current Ev = 20 lx, standard light A Ica 3.5 10 16 µA
Ev = 100 lx, standard light A Ica 50 µA
Angle of Half Sensitivity ϕ±60 deg
Wavelength of Peak Sensitivity λp570 nm
Range of Spectral Bandwidth λ0.1 360 to 970 nm
Collector Emitter Saturation
Voltage Ev = 20 lx, 0.45 µAV
CEsat 0.1 V
Figure 1. Collector Light Current vs. Illuminance
Figure 2. Relative Spectral Responsivity vs. Wav elength
19006
1
10
100
1000
10 100 1000
E
v
- Illuminance ( lx )
I - Collector Light Current ( A )
ca
µ
0.0
0.2
0.4
0.6
0.8
1.0
1.2
300 400 500 600 700 800 900 1000 1100
18465
λ - Wavelength ( nm )
S ( ) - Relative Spectral Sensitivity
rel
λ
Figure 3. Relative Radiant Sensitivity vs. Angular Displacement
0.4 0.2 0 0.2 0.4
S - Relative Sensitivity
rel
0.6
94 8318
0.6
0.9
0.8
0°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
°
VISHAY
TEMT6000
Document Number 81579
Rev. 1.2, 08-Jul-04
Vishay Semiconductors
www.vishay.com
3
Reflow Solder Profiles
Drypack
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a des-
iccant.
Floor Life
Floor li fe ( ti me be twee n so ld er ing and removing from
MBB) must not exceed the time indicated in
J-STD-020. TEMT6000 is released for:
Moisture Sensitivity Level 4, according to
JEDEC, J-STD-020
Floor Life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
Drying
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
Label. Devices taped on reel dry using recommended
conditions 192 h @ 40 °C (+ 5 °C), RH < 5 %
Figure 4. Lead-Free (Sn) Reflow Solder Profile
Figure 5. Lead Tin (SnPb) Reflow Solder Profile
180
20
Temperature( C)
°
20s
~
30 s
~
40 s120 s
~
125 C
°
145 C
°
210 C
°
250 C
°
260 C
°
280
260
240
220
200
180
160
140
80
60
40
100
120
0
0609030 150120 210 240 270 300
Time(s)
Preheat Reflow Cooling
19030
max. 160 C
full line : typical
dotted line : process limits
Time ( s )
Temperature ( C )
Lead Temperature
90s-120s
300
250
200
150
100
50
0
0 50 100 150 200 250
max. 240 C ca. 230 C 10 s
215 C
max40s
2 K/s - 4 K/s
94 8625
°°
°
°
°
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4Document Number 81579
Rev. 1.2, 08-Jul-04
VISHAY
TEMT6000
Vishay Semiconductors
Package Di mens ions in mm
18464
VISHAY
TEMT6000
Document Number 81579
Rev. 1.2, 08-Jul-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Prot ectio n Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to impr ove te chnical design
and may do so without further notic e.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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