Stripline Packaged Schottky Mixer Diodes Features Large Choice of Available Packages Uniform RF Characteristics e Screening to JANTXV Level Available e Low, Medium and High Barrier Diodes Description Three families of stripline packaged mixer diodes are offered in a wide range of packages. These diodes have low noise figure through 26 GHz. The three families are: Low Barrier diodes for minimum LO drive. Medium Barrier diodes for normal LO drive. High Barrier diodes for maximum dynamic range and upconverters. Applications Stripline and microstrip mixers from 100 MHz Upconverters. Stripline Packaged Schottky Mixer Diodes These stripline packaged Schottky barrier mixer diodes are suitable for use in stripline and microstrip mixers. Each family of diodes is listed by barrier height, increasing fre- quency capability, and grouped according to package style and noise figure. The forward I-V characteristics of Schottky diodes are dependent on the barrier voltage of the metal. The barri- er voltage affects the local oscillator requirement for opti- mum RF performances. M/A-COM offers low, medium and high barrier Schottky mixer diodes. Electrical characteristics and packaging other than the stan- dard specifications listed, may be available upon request. For more information, contact the factory. Specifications Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 V 2.00 Case Style 213 Maximum Ratings Temperature Range Operating (case style 186, 276) -65C to +150C (case style 137, 213) ~65C to +125C Storage (case style186,276) -65C to +150C (case style 137, 213) -65C to +125C Incident Power Ratings Maximum Peak RF incident Power C-X Band 1 Watt for 1 microsecond maximum Ku-K Band 0.5 Watt for 1 microsecond maximum C-X Band 150 mW Ku-K Band 100 mW Maximum CW RF Incident Power s Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 Solder Temperature Ratings (case style 137, 213) 200C for 5 seconds, 4mm from package 225C for 5 seconds, 1mm from package (case style 186, 276) 5-45 uw Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020Stripline Packaged Schottky Mixer Diodes V 2.00 Specifications @ Ta = +25C Low Barrier Stripline Packaged Schottky Diodes Low barrier diodes normally are most satisfactory for use in balanced mixers where the local oscillator drive level is between 0.5 dBM and +3 dBM per diode. Maximum Maximum2 Z,_ Range? Model Test Frequency Noise Figure SWR Min/Max. Number Case Style (GHz) (dB) (Voits) (Ohms) MA40033 137 6.000 5.5 15 200/500 MA40036 213 6.000 5.5 15 200/500 MA40126 186 9.375 6.0 15 250/450 MA40083 213 9.375 6.0 1.5 250/450 MA40105-276 276 9.375 6.0 1.5 250/450 MA401 15-276 276 16.000 6.5 2.0 250/450 MA4E914-276 276 24.000 75 1.56 200/500 Medium Barrier Stripline Schottky Diodes Medium barrier diodes are normally most satisfactory for use in balanced mixers where the local oscillator drive level is between +0 dBM and +10 dBM per diode. Maximum! Maximum2 2, Ranges Model Test Frequency Noise Figure SWR Min/Max. Number Case Style (GHz) (dB) (Volts) (Ohms) MA40030 137 6.000 7.0 1.6 200/500 MA40032 137 6.000 .5 1.5 200/500 MA40048 213 6.000 5.5 1.5 200/500 MA40088 137 9.375 6.0 1.5 200/500 MA40089 213 9.375 6.0 1.5 200/500 MA40176 186 9.375 6.0 15 250/450 MA40155-276 276 9.375 6.0 15 250/450 MA40166-276 276 16.000 7.0 2.0 250/450 MA4E920-276 276 24.000 75 1.5 200/500 Notes: 1. Test conditions for noise figure: Pro = 1 mW (for low and medium barrier) Pio = 2 mW (for high barrier) Fie = 30 MHz Ng = 1.5 dB (minimum) R, = 22 ohms 2 SWR for low and medium barrier diodes is tested at LO power of 1.0 mW. High barrier diodes are tested at a LO power level! of 2 mW. R, = 22 Ohms. Specifications Subject to Change Without Notice. 5-46 3. Ip impedance is measured by modulating the specified test frequency with a 1000 Hz signal. R, = 22 Ohms, Low and medium barrier diodes are tested at an incident power level of 1 mW. High barrier diodes are tested at an incident power level of 2 mW. M/A-COM, Inc. North America: Tel. (800) 366-2266 _ Fax (800) 618-8883 w Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 a Europe: Tel. Fax +44 (1344) 300 020 +44 (1344) 869 595Stripline Packaged Schottky Mixer Diodes V 2.00 Specifications (Cont'd) High Barrier Stripline Schottky Diodes High barrier diodes are normally most satisfactory for use in balanced mixers where the local oscillator drive level is between + 6 dBM and + 15 dBM per diode. Maximum Maximum2 Zp Ranges Model Test Frequency Noise Figure SWR Min/Max. Number Case Style (GHz) (dB) (Volts) (Ohms) MA40045 137 6.000 5.5 1.5 200/500 MA40060 213 6.000 5.5 1.5 200/500 MA40095 137 9.375 6.0 15 250/450 MA4E197 186 9.375 6.0 1.5 250/450 MA4E199 186 9.375 7.0 2.0 250/450 MA40094 213 9.375 6.5 415 250/450 MA4E185-276 276 9.375 6.0 15 250/450 MA4E190-276 276 16.000 6.5 1.5 250/450 MA4E926-276 276 24.000 75 1.5 200/500 Notes: 1. Test conditions for noise figure: Pio = 1 mW (for low and medium barrier) Pio = 2 mw (for high barrier) Fig = 30 MHz Nig = 1.5 0B (minimum) R, = 22 ohms 2 SWR for low and medium barrier diodes is tested at LO power of 1.0 mW. High barrier diodes are tested at a LO power level of 2 mW. R, = 22 Ohms. Case Styles (See appendix for complete dimensions) O= a a 137 (Plastic Encapsulation) Cc Cc - = 213 (Plastic Encapsulation) Specifications Subject to Change Without Notice. M/A-COM, inc. 3. Ip impedance is measured by modulating the specified test frequency with a 1000 Hz signal. R, = 22 Ohms. Low and medium barrier diodes are tested at an incident power jevel of 1 mW. High barrier diodes are tested at an incident power level of 2 mW. a 186 (Hermetic Ceramic package) JIL [it 276 (Hermetic Ceramic package) 5-47 North America: Tel. (800) 366-2266 Fax (800) 618-8883 a Asia/Pacific: Tel. +81 (03) 3226-1671 m Europe: Tel. +44 (1344) 869 595 Fax. +81 (03) 3226-1451 Fax +44 (1344) 300 020Stripline Packaged Schottky Mixer Diodes Specifications (Cont'd) All stripline ceramic packaged Schottky mixer diodes can be screened to TX or TXV levels. Screened Diodes MIL-STD19500 (Case Style 186, 276) Method Inspection (MIL-STD-750) Internal Visual 2073 High Temperature Life (stabilization bake) 1032 Thermal Shock 1051 Constant Acceleration 2006 Fine Leak 1071 Gross Leak 1071 Electricat HTRB 1038 Pre Burn-in Electrical Burn-in 1038 Final Electricals and Delta Note: Condition See note T = 24 hours, T, = +150C 20 cycles -65C to +125C, T extreme >10 minutes 20,000 gs, Y1 direction H CorE See note Ta = +150C, Vp = 80% Vg, T = 48 hours minimum See note Condition B, T, = +25C, Ipk = 10 mA, T= 96 hours minimum See note 14. Conditions and details of test depend on the specific model number. Information available from the factory on request. Typical Performance Curves NOMINAL 1-V CHARACTERISTIC AND BARRIER HEIGHTS FOR SCHOTTKY MIXER DIODES ne low paRRIER- oma Cet | ALT MEDIUM ered TA HIGH BARRIER 1imA Fs > y 0 e s iy eo 10nA | =~ 20uA | | 30LA 6 -5 ~4 -3 -2 -1 0 020406 08 VOLTS NOMINAL NOISE FIGURE vs FREQUENCY 7 tp = 30 MHz N, = 1.548 565 R, + 22 OHMS = . w e Ss @ 6.0 a us g 255 5.0 1 3 5 7 11 13 15 FREQUENCY (GHz) Specifications Subject to Change Without Notice. 5-48 17 V 2.00 NOMINAL SCHOTTKY BARRIER NOISE FIGURE vs LO POWER 9.0 1 een TI 10.0 r+LOW BARRIER j a + ME OIUM BARRIER 2 2 Ii | Ut o 8.0 it~ 905 3 N N | pice m BARRIER zn 7.0 H+} 8.0 a y 5 INQ em & 6.0 7.0 > - 3 3 5.0 60 5 z | = w ~ WY 4.0/-LO FREG = 9.375 GHz, 16.0 GHz 5.0 & Ip FREQ = 30 MHz = NF|_ = 1.5d8 3.0 heer deederfedededileneeratin 4.0 01 05 0.1 0.5 1.0 .010.0 LO POWER (mW) NOMINAL L-V CHARACTERISTICS AND BARRIER HEIGHTS FOR SCHOTTKY MIXER DIODES "ee 3ARRIER wien BA _. 1000 +t g MEDIUM BARRIER 5 soo} } a w XN F, , * 9.375 GHz 9 A \ Lo 2 soo PAS " R, = 100 OHMS a wh = 400 x ~~ a = ~ \L tow BARRIER 200 0 4 2 5 10 20 5.0 10.0 LOCAL OSCILLATOR POWER (mW) M/A-COM, Inc. North America: Tel. (800) 366-2266 a Asia/Pacific: Tel. +81 (03) 3226-1671 mw Europe: Tel. +44 (1344) 869 595 ~ Fax (800) 618-8883 Fax +81 (03) 3226-1451 Fax +44 (1344) 300 020