Rugged Power MOSFETs IRF620R, IRF621R; IRF622R, IRF623R Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 5.0A, 150V-200V fos(on) = 0.8Q and 1.20 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited M@ Nanosecond switching speeds @ Linear transfer characteristics B High input impedance File Number 1989 N-CHANNEL ENHANCEMENT MODE D o2cs-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION The IRF620R, IRF621R, IRF622R and IRF623R are ad- co SOURCE vanced power MOSFETs designed, tested, and guaranteed pf to withstand a specified level of energy in the breakdown DRAIN oy om ST DRAIN avalanche mode of operation. These are n-channel en- (LANGE) -8 CS hancement-mode silicon-gate power field-effect transis- CO tors designed for applications such as switching regulators, st fy ATE switching converters, motor drivers, relay drivers, and driv- TOP VIEW ers for high-power bipolar switching transistors requiring s2cep se5ze high speed and low gate-drive power. These types can be JEDEC TO-220AB operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings Parameter IRF620R IRF621R IRF622R IRF623R Units Vos Drain - Source Voltage @ 200 150 200 150 Vv Voca Drain - Gate Voltage (Res = 20 KN) 200 150 200 150 Vv lo @ Te = 25C Continuous Drain Current 5.0 5.0 4.0 40 A lo @ Te = 100C Continuous Drain Current 3.0 3.0 25 2.5 A lon Pulsed Drain Current @ 20 20 16 16 A Ves Gate - Source Voltage +20 Vv Pp @ Te = 25C Max. Power Dissipation 40 (See Fig. 14) Ww Linear Derating Factor 0.32 (See Fig. 14) w/ec Eas Single Pulse Avalanche Energy Rating @ 85 mj te Sperling nation and oe 55 0 160 c Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) c 6-102Rugged Power MOSFETs Electrical Characteristics @ Tc = 25C (Uniess Otherwise Specified) IRF620R, IRF621R, IRF622R, IRF623R P ti Type Min. Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF620R = | IRF622R 200 - - v Ves = OV IRF621R = IRF623R 150 - - v lo = 250uA Vesun Gate Threshold Voltage ALL 2.0 = 4.0 v Vos = Ves, lo = 2504 A lass Gate-Source Leakage Forward ALL = = 500 nA_ | Ves = 20V lass Gate-Source Leakage Reverse ALL _ _ -500 nA Ves = -20V loss Zero Gate Voltage Drain Current _ _ 250 HA Vos = Max. Rating, Ves = OV ALL [-~ [= [1000 | pa | Vos = Max. Rating x 0.8, Vas = OV, Te = 125C loom On-State Drain Current @ IRF620R | 9 _ _ A IRF621R Vos > loton: X Rosion) max, Vas = 10V (RF622R 4.0 _ _ A IRF623R | Rosiom Static Drain-Source On-State IRF620R;} 05 08 Q Resistance @ IRF621R Vos = 10V, to = 2.5A IRF622R _ 08 12 Q IRF623R : . | Gte Forward Transconductance @ ALL 1.3 2.5 - S(G)_|_ Vos > Ipton x Rostonmar, lo = 2.5A Ciss Input Capacitance ALL = 450 = pF Vos = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL _ 150 pF See Fig. 10 Cras Reverse Transfer Capacitance ALL = 40 _ pF : |_tatons Turn-On Delay Time ALL = 20 40 ns Vop = 2.5 BVoss, Ip = 2.5A, Zo = 502 te Rise Time ALL = 30 60 ns See Fig. 17 taro Turn-Off Delay Time ALL = 50 100 ns (MOSFET switching times are essentially tr Fall Time ALL 30 60 ns independent of operating temperature.) Q, Total Gate Charge ALL _ 11 15 nc Vas = 10V, In = 6.0A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Qgs Gate-Source Charge ALL 5.0 nc essentially independent of operating - - = temperature.) Qya Gate-Drain (Miller) Charge ALL _ 6.0 _ nc Lp Internal Drain Inductance - 3.5 nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL ~ 45 - nH | Measured from the inductances. drain lead, 6mm (0.25 5 in.) from package to Lo center of die. Ls Internal Source Inductance ALL - 75 - nH Measured from the 6 source lead, 6mm us (0.25 in.) from package to source s bonding pad. sven anes Thermal Resistance RnJC Junction-to-Case ALL = ~ 3.12 | C/W RCS Case-to-Sink ALL = 1.0 _ C/W _| Mounting surface flat, smooth, and greased. RinJA _ Junction-to-Ambient ALL = = 80 C/W _| Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF620R;} _ 5.0 A Modified MOSFET symbol (Body Diode) IRF621R . showing the integral IRF622R 40 A reverse P-N junction rectifier. 8 IRF623R ~~ ~ : Ism Pulse Source Current IRF620R} _ 20 A G (Body Diode) LIRF621R IRF622R $ inFe2aR| ~ | | 1% | A neta Vso Diode Forward Voltage @ (RF620R;} _ = = = IRF621R 1.8 Vv Te = 25C, Is = 5.0A, Vas = OV tRF622R = = = IRF623R _- ad 1.4 Vv Te = 25C, ts = 4.0A, Ves = OV te Reverse Recovery Time ALL = 350 = ns Ty = 150C, lp = 5.0A, dle/dt = 100A/ps Qaa Reverse Recovered Charge ALL 2.3 uc Ts = 150C, le = 5.0A, die/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + Lo. @ T, = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5). @ Voo = 10V, starting T, = 25C, L = 6.18MH, Rgs = 502, Ipeax = 5A. See figures 15, 16. 6-103Rugged Power MOSFETs IRF620R, IRF621R, IRF622R, IRF623R Ip. ORAIN CURRENT {AMPERES} Q 20 40 0 40 100 Vag. DRAIN TC SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics 4} Bus urse Ip, DRAIN CURRENT (AMPERES) Q 2 a 6 8 10 Vg. ORAIN T3-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics o = nm ZmacttW Rn, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPECANCE (PER UNIT) e s 0. 0.08 SINGLE PULSE 0.02 THEAMAL IMPEDANCE) 0.01 wh 2 5 wh 2 5 93 2 ty, DRAIN CURRENT (AMPERES) Ip. DRAIN CURRENT (AMPERES) 2 00 sss PULSE TEST Yos> * Raston) max. 2 4 6 a 10 Vgs. GATE TO SOURCE VOLTAGE (VOLTS? Fig. 2 Typical Transfer Characteristics AREA IS LIMITED 8Y Rosin) Te = 28C Ty = 180C MAX Rinse = 3.12 C/W PULSE 2 5 10 620 56 100-200 500 Vos. GRAIN.TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area fo tym o- 12 1, DUTY FACTOR, D= z 2. PER UNIT BASE = Ainge = 3.12 DEG. CW. 3. Tym - Te * Pom Zensclt. wl 2 5 10 a 5 to ty, SQUARE WAVE PULSE OURATION (SECONOS) Fig. S Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-104Rugged Power MOSFETs IRF620R, IRF621R, IRF622R, IRF623R 2 5 ToT pd 102 4 9500 pe . Ty 25H _ ee 3 sons 2 Ty = 180C ut, TAANSCONDUC TANCE (SIEMENS) Ty = 190C Ipg. REVERSE DRAIN CURRENT (AMPERES) Vos = "Dion * ROS(on) mov. | 80 PULSE TEST I" Ty = 25C 0 2 4 t a 10 0 1 : 7 a 'p. ORAIN CURRENT (AMPERES) Vgp. SOURCE-TO-ORAIN VOLTAGE (VOLTS) Fig. 6 Typical Transconductance Vs. Orain Current Fig. 7 Typical Source-Drain Diode Forward Voltage 125 fe ! 3 e 5 g 3 = & z @ S = 2 Sa 105 Sa ae wa sy gn ar asa we ax _ 4 ez = = = 30 26 Bez 095 Zz 10f 4 e = = a + * 4 = Yigg - 10 , 085 2 06 4 soe > 2 = |p: 2A , > | 1 1 + | i bow itt | 1 07s 02 1 i L ! -40 9 40 80 120 160 -40 a 40 80 120 Ty, JUNCTION TEMPERATURE (9C} Ty, JUNCTION TEMPERATURE (C) Fig. 8 ~ Breakdown Voltage Vs. Temperature Fig. 9 Normalized On-Resistance Vs. Temperature Vas = 0 {* 1 Cigg * Cop + Cy, Coe SHORTED Cray * Coa Cy C, Cons Cos TS Cag Cys ' Vos 7 40V | Vos = 160V, IRF620R, 622A C, CAPACITANCE (pl) Vgs. GATE-TO-SOURCE VOLTAGE (VOLTS) Ip = 6A FOR TEST CIRCUIT FIGURE 18 TSS. 0 0 20 w a0 50 0 4 6 2 16 20 Vos. DRAIN-TO-SOUACE VOLTAGE (VOLTS) Oy. TOTAL GATE CHARGE [nCh Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-105Rugged Power MOSFETs IRF620R, IRF621R, IRF622R, IRF623R 1S g s ~ Fe Vgs = 10 B 3 10 @ & 3 = 3 | [er 2 on Vgs* 20v Zz 05 = 5 = g Rosion) MEASURED WITH CURFIENT PULSE OF = 2.0 us OURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL} 9 5 10 15 20 Ip. DRAIN CURRENT (AMPERES) Fig. 12 Typical On-Resistance Vs. Drain Current VARY tp TO OBTAIN REQUIRED PEAK i, Veg *10 I F + ty, DRAIN CURRENT (AMPERES) 0 23 tRF62OR, 621A 50 5 100 Tc, CASE TEMPERATURE (C) 125 150 Fig. 13 Maximum Drain Current Vs. Case Temperature 40 35 | 4. + -+ 4 + +4 Po. POWER DISSIPATION (WATTS) 0 20 40 80 100 120 140 Te, CASE TEMPERATURE ("C1 Fig. 14 ~ Power Vs. Temperature Derating Curve Vos S2C8-42659 Fig. 15 Unclamped Energy Test Circuit ADJUST Ay TO OBTAIN SPECIFIED Ip PULSE GENERATOR OUT. ro---7-- t I 0.0182 ' HIGH FR L SHUNT TO SCOPE 'EQUENCY Fig. 17 Switching Time Test Circuit 6-106 9203-42660 Fig. 16 Unclamped Energy Waveforms Vos CURRENT {ISOLATED REGULATGAR SUPPLY) SAME TYPE (o CURRENT SHUNT Fig. 18 Gate Charge Test Circuit 'g CUARENT = SHUNT