SILICON PLANAR EPITAXIAL N-P-N TRANSISTORS 5734 -e Tu 357- bee" BSX59 BSX60 BSX6I Silicon planar epitaxial n-p<Nitransistors intended for use in very high speed core driving applications QUICK REFERENCE DATA BSX59 BSX 60 BSX61 . 70 VeRO max 70 Vv Varo max. 45 45 Vv In max. 1.0 1.0 A Pot max. (Tomb 2 C) 800 800 800 mW T, max. 200 200 200 c = VieFl. in. - : hor fi 500mA, CE 1.0V) 25min 30-90 25min . =500mA, = . . VoeEisaty * O, mA I, 50mA) 0.5 0.7 Vv ton max. @., =500mA, Txon ~ DOmA, Varort 2:9) 35 50 ns t oe max, @,, = 500mA, I 30n ~ Boge = SOMA) 60 100 ns Unless otherwise stated data is applicable to all types OUTLINE AND DIMENSIONS Conforming to B.S. 3934 SO-3/SB3-3A J.E.D.E.C. TO-5 A Millimetres Bp Min. Nom. Max. | A 9.10 - 9.40 B 8.2 - 8.50 Cc 6.10 - 6.60 D - 5.08 - E 0.71 - 0.86 Fl - - 0.51 F2 12.7 - - F3 38.1 - 41.3 Gl - - 1.01 G2 0.41 - 0.48 G3 - 0.53 H - 4 - J 0.74 1.01 The collector 1s connected to the envelope Mullard JULY 1967 BSX59-Page D1SILICON PLANAR EPITAXIAL N-P-N TRANSISTORS ELECTRICAL CHARACTERISTICS (cont'd) Vv Collector-base breakdown (BR)CBO voltage 1 =10puA, 1, =0 BSX59 c E BSX60 BSX61 Collector-emitter breakdown voltage Vv I. =100nA, V__=0 BSX59 (BR)CES Cc BE BSX60, 61 Vv J_=10mA, I_=0 BSX59, 61 (BR)CEO Cc B BSX60 - =3, Vv, =7 y ; V BR)CEX Vas 3.5 Rp 02 BSX59,61 Vv Collector-emitter saturation CE\(sat) voltage In =150mA, 1,* 15mA BSX59 BSX60 BSX61 In =500mA, I, =50mA BSX59 BSX60 BSX61 1, =1.0A, 1,,=100mA BSX59 BSX60 BSX61 Vv Base-emitter saturation BE(sat) voltage Ty =150mA, 1, 15mA Io =500mA, I =50mA BSX59 BSX60 BSX61 In =1.0A, 1, = 100mA h FE Static forward current transfer ratio 1_=150mA, V..=1.0V BSX59 c cE BSX60 BSX61 NOTE Min. 70 70 70 60 60 45 30 30 30 30 85 7 77 Typ. 120 110 100 110 100 55 50 70 100 110 iP Heh ty ooo 000 0000 ee @ ann ff bh do BSX59 BSX60 BSX6I Max. - Vv - Vv - Vv - Vv - Vv - Vv - Vv See note 1 4 0.3 Vv 1 0.3 Vv 8 0.5 Vv 0.5 Vv 2 0.5 Vv 0.7 Vv 1.0 Vv 6 10 Vv 6 1.3 Vv 1.0 Vv 1.2 Vv 1.3 Vv 1.3 Vv 1.8 Vv 1. Nobreakdown may occur when the transistor is switched from Ic = 1.0A to VcE =60V with -lporp = 50mA. Mullard BSX59-Page D3SILICON PLANAR EPITAXIAL BSX59 N-P-N TRANSISTORS BSX60 BSX61 Recovered charge test circuit and waveforms 30v Yin 60 Inpu Cz SOOpF | Dulse A. | | [ | x) our Lan v to=10ps 1BOkN out C2 2% Fig 1 ig. Adjust C from zero to C 6 opt Q =C xV. Ss opt in P Vee Turn-on and turn-off test circuit and waveforms ' <Srst ot I 2500ns PulSe generator weed ? oi Output impedance =500 BSX59 . BSX61 BSX60 X -1V 0 reasure CC 50 3 R 100 60 C -V .0 ton YB 4 Vv 24.75 in Vp 16.7 off Vv 37.5 in Mullard BSX59-Page D5100 -50 0 50 100 T, CC) 150 TYPICAL VARIATION OF STATIC FORWARD CURRENT TRANSFER RATIO WITH JUNCTION TEMPERATURE ; BSX59 spn t- -]---- [--Bsx6o: -]--} - J --- 87519 rs { tre ec to ee we ah we eet ee ee ee ee ee ee ee Tr ee TT = -forT2 pila] ceo fo. ~1 =100mMA+--- - be ori Lit lwilo Ly SILpTS o e- jo wee -_-- se ep were eet + + pb aee + f- -- - fet A a - . ee me -_ _4 ~ em + - ceo: coer memt = + PODTMIDL IG LIL eT i eee 50 : : ! =50 , 0 50 100 7; ty 750 TYPICAL VARIATION OF STATIC FORWARD CURRENT TRANSFER RATIO WITH JUNCTION TEMPERATURE; BSX60 Mullard BSX59-Page C2ooo! (vwy)] oot ot O1 LO E BSX59-Page C4 Mullard OOP orp aw) (10S) 3D, VOLTAGE WITH COLLECTOR CURRENT TYPICAL VARIATION OF COLLECTOR-EMITTER SATURATIONTYPICAL VARIATION OF INPUT CAPACITANCE WITH BASE-EMITTER VOLTAGE BSX59 FR B7526 BSX60 10 BSX61 Tg=0 f=1-OMHz Tj=25C Cobo (pF) }- __ 10 20 30 rae) Veal) 50 TYPICAL VARIATION OF OUTPUT CAPACITANCE WITH COLLECTOR-BASE VOLTAGE Mullard BSX59-Page C6> oO v Hl a U > Oo a Ut. me 1:0 0-01 TCC) 150 100 50 TYPICAL VARIATION OF COLLECTOR AND EMITTER CUT-OFF CURRENT WITH JUNCTION TEMPERATURE Mullard BSX59-Page C8