MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N6308 Features * * * NPN Silicon Power Transistors For switching power supply applications 700V collector-base breakdown capability Excellent Dynamic saturation characteristics Maximum Ratings Symbol V CEO V CBO V EBO ICP IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 380 700 10 16 8.0 140 -55 to +150 -55 to +150 TO-3 Unit V V V A A W O C O C E C K D U Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max V V EBO ICBO IEBO L Units H OFF CHARACTERISTICS V (BR)CEO A N Collector-Emitter Breakdown Voltage* (IC=10mAdc, IB =0) Emitter-base breakdown voltage (IE =1.0mAdc, IC=0) Collector-Base Cutoff Current (VCB=700Vdc, IE =0) Emitter-Base Cutoff Current (VEB =10Vdc, IC=0) 380 --- Vdc 10 --- Vdc --- 100 uAdc --- 10 uAdc 2 1 V CE(sat) V BE(sat) tF TS B Q PIN 1. PIN 2. CASE. ON CHARACTERISTICS hFE G BASE EMITTER COLLECTOR DIMENSIONS Forward Current Transfer ratio (IC=8.0Adc, V CE=5.0Vdc) Collector-Emitter Saturation Voltage (IC=5.0Adc, IB =1.0Adc) Base-Emitter Saturation Voltage (IC=5.0Adc,IB =1.0Adc) Full time (VCE=300Vdc, IC=5.0Adc, IB1=1.0Adc, V BE(off)=5.0V dc) Turn-off storage time (VCE=300Vdc, IC=5.0Adc, IB1=1.0Adc, V BE(off)=5.0V dc) 5.0 20 --- --- 1.0 Vdc --- 1.5 Vdc --- 125 nS --- 2300 INCHES DIM A B C D E G H K L N Q U V MIN 1.550 ----.250 .038 0.55 .430 .215 .440 .665 ----.151 1.187 .131 MAX REF 1.050 .335 .043 0.70 BSC BSC .480 BSC .830 .165 BSC .188 MM MIN 39.37 ----6.35 0.97 1.40 10.92 5.46 11.18 16.89 ----3.84 30.15 3.33 MAX REF 26.67 8.51 1.09 1.77 BSC BSC 12.19 BSC 21.08 4.19 BSC 4.77 NOTE nS www.mccsemi.com Revision: 2 2003/04/30