Selection Guide
Semiconductor Group 35 1998-11-01
For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm
Leaded Components
Varactor Diodes (leaded)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package
VR
VIF
mA CT at
pF VR
VCT at
pF VR
VCRatio IRat
nA VR
V
■BB 112 12 50 440 - 520 116.50 - 29.00 8.5 ≥ 18.0 0 50 10 TO-92a
■■ Not for new design
BB 304 32 50 42 - 47.5 2 25.00 8.0 1.65 - 1.75 20 30 TO-92b
Transistors (leaded)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
High-Voltage Transistors
■BF 420 N300 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 –TO-92d
■BF 421 P 300 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■BF 422 N250 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 –TO-92d
■BF 423 P 250 50 830 100 ≤ 10 200 ≥ 50 25 20 ≤ 20.0 25 – TO-92d
■BFP 22 N200 200 625 70 ≤ 100 160 ≥ 50 30 10 ≤ 0.5 20 2TO-92c
■BFP 23 P 200 200 625 70 ≤ 100 160 ≥ 50 30 10 ≤ 0.4 20 2 TO-92c
■BFP 25 N300 200 625 70 ≤ 100 250 ≥ 40 30 10 ≤ 0.4 20 2TO-92c
■BFP 26 P 300 200 625 70 ≤ 100 250 ≥ 40 30 10 ≤ 0.5 20 2 TO-92c
■MPSA 42 N300 500 625 70 100 200 ≥ 40 30 10 ≤ 0.5 20 2TO-92c
■MPSA 43 N 200 500 625 70 100 160 ≥ 40 30 10 ≤ 0.4 20 2 TO-92c
■MPSA 92 P300 500 625 70 100 200 ≥ 25 30 10 ≤ 0.5 20 2TO-92c
■MPSA 93 P 200 500 625 70 100 160 ≥ 30 30 10 ≤ 0.4 20 2 TO-92c
■ Not for new design
Semiconductor Group 1 1998-11-01
Selection Guide
Semiconductor Group 36 1998-11-01
■ Not for new design
■ Not for new design
Darlington Transistors
■BC 516 P30 500 625 200 ≤ 100 30 ≥ 30000 20 2≤ 1. 0 100 0.1 TO-92d
■BC 517 N 30 500 625 150 ≤ 100 30 ≥ 30000 20 2 ≤ 1.0 100 0.1 TO-92d
■BC 617 N40 500 625 150 ≤ 100 40 ≥ 20000 200 5≤ 1. 1 200 0.2 TO-92d
■BC 618 N 55 500 625 150 ≤ 100 60 ≥ 10000 200 5 ≤ 1.1 200 0.2 TO-92d
■BC 875 N45 1000 800 150 ≤ 100 60 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 876 P 45 1000 800 150 ≤ 100 60 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 877 N60 1000 800 150 ≤ 100 80 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 878 P 60 1000 800 150 ≤ 100 80 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 879 N80 1000 800 150 ≤ 100 90 ≥ 2000 500 10 ≤ 1.3 500 0.5 TO-92d
■BC 880 P 80 1000 800 150 ≤ 100 90 ≥ 2000 500 10 ≤ 1 .3 500 0.5 TO-92d
RF-Transistors
Type
N = NPN
P = PNP
Maximum Rat i ngs Char acte r i stics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz GPC
dB IC
mA VCE
Vf
MHz
■BF 414 P30 25 300 0.56 3.0 510 100 – – – – TO-92d
■BF 506 P 35 30 300 0.55 3.0 2 10 200 – – – – TO-92d
■BF 959 N20 100 500 1.10 4.0 20 10 200 – – – – TO-92d
Transistors (leaded) (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
Semiconductor Group 2 1998-11-01
Selection Guide
Semiconductor Group 37 1998-11-01
For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm
■Not for new design
* Available in
hFE subgroups.
General Purpose and Switching Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCB0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
■BC 327 P50 800 625 200 ≤ 100 45 100 … 630* 100 1≤ 0.70 500 50.0 TO-92d
■BC 328 P 30 800 625 200 ≤ 100 25 100 … 630* 100 1 ≤ 0.70 500 50. 0 TO-92d
■BC 337 N50 800 625 170 ≤ 100 45 100 … 630* 100 1≤ 0.70 500 50.0 TO-92d
■BC 338 N 30 800 625 170 ≤ 100 25 100 … 630* 100 1 ≤ 0.70 500 50. 0 TO-92d
■BC 368 N25 1000 800 100 ≤ 100 25 85 … 375 50 0 1≤ 0.50 100 0 100.0 TO-92d
■BC 369 P 25 1000 800 100 ≤ 100 25 85 … 375 500 1 ≤ 0.50 1000 100.0 TO-92d
■BC 635 N45 1000 800 100 ≤ 100 30 40 … 250 150 2≤ 0.50 500 50.0 TO-92d
■BC 636 P 45 1000 800 100 ≤ 100 30 40 … 250 150 2 ≤ 0.50 500 50. 0 TO-92d
■BC 637 N60 1000 800 100 ≤ 100 30 40 … 160 150 2≤ 0.50 500 50.0 TO-92d
■BC 638 P 60 1000 800 100 ≤ 100 30 40 … 160 150 2 ≤ 0.50 500 50. 0 TO-92d
■BC 639 N100 1000 800 100 ≤ 100 30 40 … 160 150 2≤ 0.50 500 50.0 TO-92d
■BC 640 P 100 1000 800 100 ≤ 100 3 0 40 … 160 150 2 ≤ 0.50 500 50.0 TO-92d
■BCX 12 N125 800 625 100 100 100 63 100 1≤ 1.00 500 50.0 TO-92d
■BCX 13 P 125 800 625 120 100 100 63 100 1 ≤ 1. 00 500 50.0 TO-92d
■BCX 58 N32 100 500 200 ≤ 20 32 120 … 630* 2 5 ≤ 0.50 100 2.50 TO-92d
■BCX 59 N 45 100 500 200 ≤ 20 45 120 … 630* 2 5 ≤ 0.50 100 2.5 0 TO-92d
■BCX 78 P32 100 500 250 ≤ 20 32 120 … 630* 2 5 ≤ 0.60 100 2.50 TO-92d
■BCX 79 P 45 100 500 250 ≤ 20 45 120 … 630* 2 5 ≤ 0.60 100 2.5 0 TO-92d
Semiconductor Group 3 1998-11-01
