REVISIONS DOC. NO. SPC-FOO5 * Effective: 7/8/02 * DCP No: 1398 ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED ul ti m WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC DCP #| REV DESCRIPTION DRAWN| DATE |CHECKD] DATE |APPRVD| DATE p , 1885 A RELEASED BYF | 02/03/06} HO | 2/6/06 | JWM | 2/6/06 SPCFO05.DWG Description: A medium power silicon, PNP transistor in a TO-220 type package designed for switching and amplifier Electrical Characteristics: (Tp= +25C unless otherwise specified) applications. This device is especially designed for series and shunt regulators and as a driver and output stage of Parameter | Symbol | Test Conditions | Min| Max | Unit | high-fidelity amplifiers. OFF Characteristics CollectorEmitter Breakdown Voltage (Note 1)| ieryceo [Ic = 30mA, Ik = 0 60 | Vv Features: Collector CutOff Current Ibeg | Vop = 3OV, fF = O - 10.3 | mA Low Saturation Voltage Emitter CutOff Current Iso |Vep = OV, = O - 1 mA Absolute Maximum Ratings: ON Characteristics (Note 1) CollectorBase Voltage, Vogg = 100V CollectorEmitter Voltage, Vogg = 60V DC Current Gain hee (Mee = 4 Ve = 0.2A 40] - | = EmitterBase Voltage, Vego = 5V Moe = 4V, Io = 1A 1s!75| Continuous Collector Current, Ip = 3A - - V Base Current, Is = OAA CollectorEmitter Saturation Voltage cE(sat) Ig = 1A, = 125mA | 0.7 Total Device Dissipation (Te = +25C), Py = 30W BaseEmitter On Voltage Vaecon) [Io = 1A, Vor = 4V | 4.3 Derate above 25C = 0.24mW/*C Small-Signal Characteristics Total Device Dissipation (Te = +25C), Py = 2W in- i Vor = 10V, = 200mA, f = 1MHz _ Derate above 25C = 0.016mW/"C Current Sain Bandwidth Product fr md a ae 3 MHz Operating Junction Temperature Range, Tj = 65C to +150C SmallSignal Current Gain he | OE = k= my TSN | 20 | | Storage Temperature Range, Tetg = -65C to +150C Note 1. Pulsed: Pulse Duration = 30Qus, Duty Factor = 0.018. Thermal Resistance, JunctiontCase, Rinwc = 4.167C/W Thermal Resistance, JunctiontoAmbient, Rina = 62.5C/W B c | E Dimensions| A B Cc |D E | F G H J K L M N 0 H } F Min. 14.42] 9.63|3.56} [1.15] 3.75] 2.29] 2.54) | 12.70|2.80]| 2.03) 7 FT , Max. 16.51|10.67 [4.83] 0.90 |1.40| 3.88] 2.79] 3.43/0.56| 14.73/4.07 | 2.92] 31.24 A = O 3 Collector N | o1_2 3 0 Pin Configuration: L | | | 1. Base T tL, RoHS 2 Base PNP 2. Collector Compliant 3. Emitter K | | | 4. Collector tol di 1 Emitter 1 3 pl, JK ek Yor DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED BASAM YOUSIF 02/03/06 Medium Power Transistor, Silicon, TO-220, PNP HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE UNLESS OTHERWISE BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE USER SHALL DETERMINE THE SUITABLY OF THE Propucr | DIMENSIONS ARE HISHAM ODISH 2/6/06 | A TIP30A 01H1004.DWG | A FOR THE INTENDED USE AND ASSUME ALL RISK AND FOR REFERENCE APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. : . NTS MILLIMETERS j JEEF MCVICKER 2/6/06 | SCALE: U.O.M.: SHEET: 1 OF 1