(SEE REVERSE SIDE)
R1
BFX34
NPN SILICON TRANSISTOR
JEDEC TO-39 CASE
DATA SHEE
T
DESCRIPTION: The CENTRAL SEMICONDUCTOR BFX34 is a silicon NPN transistor designed for switching and
general purpose applications where a high collector current (5.0 AMPS) is required.
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 120 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC 5.0 A
Power Dissipation PD 1.0 W
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +200 °C
Thermal Resistance ΘJA 175 °C/W
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICES V
CE=60V 10 µA
IEBO V
EB=4.0V 10 µA
BVCBO I C=5.0mA 120 V
BVCEO I C=100mA 60 V
BVEBO IE=1.0mA 6.0 V
VCE(SAT) IC=5.0A, IB=0.5A 1.0 V
VBE(SAT) IC=5.0A, IB=0.5A 1.6 V
hFE V
CE=2.0V, IC=2.0A 40 150
fT V
CE=5.0V, IC=0.5A, f=20MHz 70 MHz
Cob V
CB=10V, IE=0, f=1.0MHz 100 pF
Cib V
EB=0.5V, IC=0, f=1.0MHz 500 pF
ton V
CC=20V, IC=5.0A, IB1= IB2=0.5A 0.6 µs
toff V
CC=20V, IC=5.0A, IB1= IB2=0.5A 1.2 µs
BFX34 NPN SILICON TRANSISTOR
TO-39 PACKAGE - MECHANICAL OUTLINE
A
B
45°
D
E
C
F
J
I
LEAD #1
LEAD #2
LEAD #3
H
G
R1
Lead Code
1) Emitter
2) Base
3) Collector
MIN MAX MIN MAX
A (DIA) 0.335 0.370 8.51 9.40
B (DIA) 0.315 0.335 8.00 8.51
C - 0.040 - 1.02
D 0.240 0.260 6.10 6.60
E 0.500 - 12.70 -
F (DIA) 0.016 0.021 0.41 0.53
G (DIA)
H
I 0.028 0.034 0.71 0.86
J 0.029 0.045 0.74 1.14
TO-39 (REV: R1)
0.200
0.100
5.08
2.54
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
