QT: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTAONICS 4N35 4N36 4N37 The 4N35, 4N36, and 4N37 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. @ AC line/digital logic isolator @ Digital logic/digital logic isolator @ Telephone/telegraph line receiver @ Twisted pair line receiver High frequency power supply feedback control Relay contact monitor Power supply monitor Industrial controls - Covered under UL component recognition program, 124 reference File E90700 High DC current transfer ratio 086 0.40 DIMENSIONS IN mm PACKAGE CODE K ST1603A awoDe[t| (6) BASE cat] s]cou Ze Bl a}eMar. 2078 Equivatent Circuit TOTAL PACKAG OUTPUT TRANSISTOR *Relative humidity ................... 85% @ 85C = *Power dissipation at 25C ambient........ 300 mw *Storage temperature ............. 55C to 150C Derate linearly above 25C .............. 4mw/rc *Operating temperature ........... 55C to100C + *Power dissipation at T,.=25C .......... 500 mWtt *Lead temperature (soldering, 10 sec) ....... 260C (T. indicates collector lead temp INPUT DIODE 1/32 from case) *Forward DC current (continuous) ........... 60 mA *y 30 volts Reverse voltage ............. 20. cee eee ee 6 volts y Date nse sss 70 volts *Peak forward current Ve eee 7 volts ape - . riesipationat r= 25C Jee 1 00 an *Collector current (continuous) ............ 100 mA *Power dissipation at T;-=25C ........... 100 mWt (T, indicates collector lead temp 1/32 from case) *Indicates JEDEC registered values tDerate 1.33 mW/C above 25C. ttDerate 6.7 mW/C above 25C. 1-33 PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS ELECTRO-OPTIC CHARACTER (25C Free Air Temperature Uni CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS INPUT DIODE *Forward voltage Ve 8 1.50 Vv k=10 mA *Forward voltage temp. coefficient Ve 9 17 Vv =10 mA, T,=55C *Forward voltage Vr 7 1.4 Vv =10 mA, T,=+ 100C *Junction capacitance Cc, 100 pF V,-=0V, f=1 mHz *Reverse leakage current .01 10 pA Va=6.0V DETECTOR DC forward current gain Fre 250 Voe=5 V, le=100 pA *Collector to emitter breakdown voltage BV a6 30 65 Vv le=10 mA, |p=O *Callectar to base breakdown voltage BVcuo 70 165 Vv le=100 pA, l-=0 *Emitter to collector breakdown voltage BVeco 7 14 ; Vv le=100 pA, |-=0 Collector to emitter, leakage current Ieee 5 50 nA Vce=10 V, |-=0 *Collector to emitter leakage current (dark) loco 500 pA Vce=30 V, |-=0, a=100C Capacitance collector to emitter Ccew 8 pF ce=O Capacitance collector to base Cone 20 pF Vep=10V Capacitance base to emitter Creo 10 pF Vee=0 CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNITS TEST CONDITIONS COUPLED T*DC current transfer ratio CTR 100 % [;=10 mA, Voe=10 V t*DC current transfer ratio CTR 40 % l=10 mA, Voe=10 V, T.=55C t*DC current transfer ratio CTR 40 % 1=10 mA, V~=10 V, T,= +100C *Saturation voltagecollector to emitter Voesan 3 volts -=10 mA, |-=0.5 MA AC CHARACTERISTICS ~ Se MIN. TYP. MAX. UNITS TEST CONDITIONS *Turn on time tow 5 10 psec Voc=10 V, L=2 mA, R.=100, (Fig. 10 and Fig. 11) *Turn off time tore 5 10 psec Voc=10 V, =2 mA, =1002, (Fig. 10 and Fig. 11) *Indicates JEDEC registered values tPulse test: pulse width=300,S, duty cycle<2.0% OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS CHARACTERISTICS ~ MIN. Isolation voltage all devices Viso 5300 Vemas lo S 1A t=1 minute *|nput to output isolation current lo (pulse width=8 msec) (see Note 1) 4N35 100 LA Vio=3550 VAC (peak) 4N36 100 uA Viso= 2500 VAC (peak) 4N37 100 pA Viso= 1500 VAC (peak) *|nput to output resistance Rio 100 gigaohms Input to output voltage= 500 V (see Note 1) *Input to output capacitance Cro 25 picofarads Input to output voltage= OV, f=1 MHz (see Note 1) *|ndicates JEDEC registered values tPulse test: pulse width=300.S, duty cycle<2.0% ~ 14 a 5 | | aA ~~ 1.25 = z% Vce = 0.3V > =| ce Vce = 5.0V = an lo ols s =a oft aa o Tt | 0.78 J = LT = ia a oO > 1.0 | 2 050 Oo T =+100G. 1 Ww / c "4 3 $ 09} 7-4 ; | < ce = 0.25 | 2 5 0.8 {|} Ll z 0102 05 1 2 5 10 20 50 100 0 FORWARD CURRENT IF (mA) a 5 10 15 20 C1686 Ir {mA} C1679 Fig. 1. Forward Voltage vs. Fig. 2. Normalized CTR vs. Current Forward Current OPTOELECTRONICS PHOTO TRANSISTOR OPTOCOUPLERS Fig. 7. Normalized Tor vs. RBE Ci : \ \ | \ 2 s aN 2 A fovce= AV l - 7 N z 7 a - S 4 V) 5 0.8 a+ ~ 10 Af 5 Y a | / ~ 8 y N / 6 L Zz 06 f Wy 2 Y 4 ira 7 2 2 Zz 0.4 6 F -7 -0 -25 O +25 +50 +75 +1004125 Oo 1 2 323 4 5 6 7 8 910 11 Ta (C) C1680 le (ma) C1243 Fig. 3. Normalized CTR vs. Fig. 4. Collector Current vs. Temperature Forward Current 1.0 - 1.00 TS my > ri & 0.90 = | F 0.90 | , CH vie thay af) 0-80 VY f Nott SY Eg 0 if cer? e CE = Off 0.70 7 tt SE 0.70 ph ip = 20mA ~2 0.60 f Lt Ie = 20mA o69 le = toma | o PLP le = 10mA ce fia F=5m 5 0.50 / + tle = 5mA 5 0.50 / Q 0.40 ] G 0.40 N 5 039 ry / N 9.39 f = 0.20 | 3 0.20 L- 3 Q 0.10 8 0.10 | 0 0 10K 100K 1M 10K 100K 1M Ree BASE RESISTANCE (0) Ree BASE RESISTANCE (0) C1681 C1682 Fig. 5. CTR vs. RBE (Unsaturated) Fig. 6. CTR vs. RBE (Saturated) 12 1.2 | TS ! rt get Pa al Z yi \ e| 8 A TAN e|8 h 515 10 is whe / ne 7 aa 11 / 5 5 09 a N 5 / ul N Wu N N 08 a 40 N 2 y Voc = 10V < z / Ic = 2mA fr Voc = 10V 5 07 AL =1000 7H 3 Io = 2mA 9 / (See Fig. 10) = RL = 1000 og Ld fo 0.9 (See Fig. 10) 10K 100K 1M o 10K 100K 1M i *) Ree BASE RESISTANCE (22) Ree BASE RESISTANCE (2) C1683 C1684 Fig. 8. Normalized T., vs. RBE 1-36 OPTOELECTRONICS PHOTOTRANSISTOR OPTOCOUPLERS Vcc = 10V 12 , w Vce = 10V = Re = 1000 PULSE WIDTH = 100 us F (See Fig. 10: RL INPUT DUTY CYCLE = 10% z |g' ov - =" OUTPUT E i? = | og a . e- a : a A OUTPUT Noe ~ Zz 32 Ape . = 06 5 S Levene Zz Ie imA} C1685 C1296A 61294 Fig. 9. Switching Time vs. IC Fig. 11. Switching Time Waveforms Fig. 10. Switching Time Test Circuit 1. Tests of input to output isolation current resistance and capacitance are performed with the input terminals (diode) shorted together and the output terminals (transistor) shorted together. 2. The current transfer ratio (1,/1.) is the ratio of the detector collector current to the LED input current with Vee at 10 volts. 3. Rise time (t) is the time required for the collector current to increase from 10% ofits final value, to 90%. Fall time (t) is the time required for the collector current to decrease from 90% of its initial value to 10%.