2729GN-270 Rev 2 2729GN - 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF output power at 100s pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation 570 W Device Dissipation @ 25C Maximum Voltage and Current 150 V Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +200 C ELECTRICAL CHARACTERISTICS @ 25C Symbol Pout Gp d R/L VSWR-T jc * Characteristics Output Power Power Gain Drain Efficiency Input Return Loss Load Mismatch Tolerance Thermal Resistance Test Conditions Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz Pout=270W, Freq= 2.7 GHz Pulse Width=100uS, Duty=10% Min 270 13.3 48 -9 Typ 304 13.8 55 Max 5:1 0.6 Units W dB % dB C/W Bias Condition: Vdd=+60V, Idq=500mA peak current (Vgs= -2.0 ~ -4.5V typical) FUNCTIONAL CHARACTERISTICS @ 25C ID(Off) IG(Off) BVDSS Drain leakage current Gate leakage current Drain-source breakdown voltage VgS = -8V, VD = 60V VgS = -8V, VD = 0V Vgs =-8V, ID = 5mA 5 4 250 mA mA V Issue June 2011 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com 2729GN-270 Rev 2 2729GN - 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz Typical Performance Data: Frequency Pin (W) Pout (W) Id (A) 2700 MHz 2800 MHz 2900 MHz 12.6 12.6 12.6 300 295 310 0.93 0.86 0.80 RL (dB) Nd (%) G (dB) -11 -15 -14 13.8 13.7 13.9 56 58 67 18 16 14 12 10 8 6 4 2 0 450 Pout (W) 400 350 300 250 200 150 100 4 6 8 10 Pin (W) 12 2.7GHz Gp (dB) GaN 2.7 - 2.9 GHz , 280W, 13 dB Gain, 55% Efficiency 14 2.8GHz 2.9GHz 2729GN-270: Pin Vs. Efficiency Efficiency (%) 80% 60% 40% 20% 0% 4.0 6.0 8.0 10.0 12.0 14.0 Pin (W) 2.7GHz 2.8GHz 2.9GHz MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com 2729GN-270 Rev 2 2729GN - 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz Transistor Impedance Information Impedance Data Freq (GHz) Zs Zl 2.7 3.28 - j7.50 2.92 - j3.72 2.8 3.10 - j7.14 2.91 - j3.40 2.9 2.94 - j2.94 2.92 - j3.08 Note: Z in is looking into the input circuit; Z Load is looking into the output circuit. Test Circuit Layout Available Upon Request Please send your request to GaN@Microsemi.com MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com 2729GN-270 Rev 2 2729GN - 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz 55-QP Package Dimension Dimension A B C D E F G H I J K L Min (mil) 213 798 560 258 43 226 235 235 60 81 116 4 Min (mm) 5.41 20.26 14.22 6.55 1.09 5.74 5.96 5.96 1.52 2.06 2.94 .102 Max (mil) 217 802 564 362 47 230 239 239 62 82 118 6 Max (mm) 5.51 20.37 14.32 9.19 1.19 5.84 6.07 6.07 1.57 2.08 2.99 .152 MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com