2729GN-270 Rev 2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com
GENERAL DESCRIPTION
The 2729GN-270 is an internally matched, COMMON SOURCE, class AB
GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF
output power at 100µs pulse width, 10% duty factor across the 2700 to 2900
MHz band. The transistor has internal pre-match for optimal performance. This
hermetically sealed transistor is specifically designed for S-band radar
applications. It utilizes gold metallization and eutectic attach to provide highest
reliability and superior ruggedness.
CASE OUTLINE
55-QP
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C 570 W
Maximum Vo ltage a nd Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum T emp er a t u r e s
Storage Temperature (TSTG) -55 to +125 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz 270 304 W
Gp Power Gain Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz 13.3 13.8 dB
ηd Drain Efficiency Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz 48 55 %
R/L Input Return Loss Pin=12.6W, Freq=2.7, 2.8, 2.9 GHz -9 dB
VSWR-T Load Mismatch Tolerance Pout=270W, Freq= 2.7 GHz 5:1
Өjc Thermal Resistance Pulse Width=100uS, Duty=10% 0.6 °C/W
• Bias Condition: Vdd=+60V, Idq=500mA pea k current (Vgs= -2.0 ~ -4.5V typical)
FUNCTIONAL CHARACTERIS TICS @ 25°C
ID(Off) Drain leakage current VgS = -8V, VD = 60V 5 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 4 mA
BVDSS Drain-source breakdown voltage Vgs =-8V, ID = 5mA 250 V
Issue June 2011
2729GN – 270
270 Watts - 60 Volts, 100 μs, 10%
Radar 2700 - 2900 MHz
2729GN-270 Rev 2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com
Typical Performance Data:
Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB)
2700 MHz 12.6 300 0.93 -11 56 13.8
2800 MHz 12.6 295 0.86 -15 58 13.7
2900 MHz 12.6 310 0.80 -14 67 13.9
2729GN – 270
270 Watts - 60 Volts, 100 μs, 10%
Radar 2700 - 2900 MHz
2729GN-270: Pin V s. Efficiency
0%
20%
40%
60%
80%
4.0 6.0 8.0 10.0 12.0 14.0
Pin (W)
Ef ficiency (%)
2.7GHz 2.8GHz 2.9GHz
GaN 2.7 - 2.9 GHz , 280W, 13 dB Gain, 55% Efficiency
100
150
200
250
300
350
400
450
468101214
Pi n (W)
Pout (W)
0
2
4
6
8
10
12
14
16
18
Gp (d B )
2.7GHz 2.8GHz 2.9GHz
2729GN-270 Rev 2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com
Transistor Impedance Information
Impedance Data
Freq (GHz) Zs Zl
2.7 3.28 – j7.50 2.92 – j3.72
2.8 3.10 – j7.14 2.91 – j3.40
2.9 2.94 – j2.94 2.92 – j3.08
Note: in
Z is looking into the input circuit;
Load
Z is looking into the output circuit.
Test Circuit Layout Available Upon Request
Please send your request to GaN@Microsemi.com
2729G N – 270
270 Watts - 60 Volts, 100 μs, 10%
Radar 2700 - 2900 MHz
2729GN-270 Rev 2
MICROSEMI RFIS TS RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR EMAIL FACTORY - GaN@Microsemi.com
55-QP Package Dimension
Dimension Min (mil) M in (mm) Max (mil) Max (mm)
A 213 5.41 217 5.51
B 798 20.26 802 20.37
C 560 14.22 564 14.32
D 258 6.55 362 9.19
E 43 1.09 47 1.19
F 226 5.74 230 5.84
G 235 5.96 239 6.07
H 235 5.96 239 6.07
I 60 1.52 62 1.57
J 81 2.06 82 2.08
K 116 2.94 118 2.99
L 4 .102 6 .152
2729G N – 270
270 Watts - 60 Volts, 100 μs, 10%
Radar 2700 - 2900 MHz