© 2009 Microchip Technology Inc. Advance Information DS41297F-page 1
PIC18F2XK20/4XK20
1.0 DEVICE OVERVIEW
This document includes the programming
specifications for the following devices:
PIC18F23K20
PIC18F24K20
PIC18F25K20
PIC18F26K20
PIC18F43K20
PIC18F44K20
PIC18F45K20
PIC18F46K20
2.0 PROGRAMMING OVERVIEW
The PIC18F2XK20/4XK20 devices can be pro-
gramme d using either the high-v olt age In-C ircuit Seria l
Programming™ (ICSP™) method or the low-voltage
ICSP method. Both methods can be done with the
device in the users’ system. The low-voltage ICSP
method is slightly different than the high-voltage
method and these differences are noted where appl ica-
ble. This programming specification applies to the
PIC18F2XK20/4XK20 devices in all package types.
2.1 Hardware Requirements
In High-Volta ge IC SP mode , the PIC18F 2XK20 /4XK2 0
devices require two programmable power supplies:
one for VDD and on e for MCL R/VPP/RE3. Both suppl ies
should have a minimum resolution of 0.25V. Refer to
Section 6.0 “AC/DC Characteristics Timing
Requirements for Program/Verify Test Mode” for
additional hardware parameters.
2.1.1 LOW-VOLTAGE ICSP
PROGRAMMING
In Low-Voltage ICSP mode, the PIC18F2XK20/4XK20
device s can be program med using a single V DD source
in the operating range. The MCLR/VPP/RE3 does not
have to be brought to a different voltage, but can
instead be lef t at the no rmal opera ting volt age. Refer to
Section 6.0 “AC/DC Characteristics Timing
Requirements for Program/Verify Test Mode” for
additional hardware parameters.
2.2 Pin Diagrams
The pin diagrams for the PIC18F2XK20/4XK20 family
are shown in Figure 2-3 and Figure 2-4.
TABLE 2-1: PIN DESCRIPTIONS (DURING PROGRAMMING): PIC18F2XK20/4XK20
Pin Name During Programming
Pin Name Pin Type Pin Description
MCLR/VPP/RE3 VPP P Prog ramming Enable
VDD(2) VDD P Power Supply
VSS(2) VSS PGround
RB5 PGM I Low-Voltage ICSP™ input when LVP Configuration bit equals ‘1(1)
RB6 PGC I Serial Clock
RB7 PGD I/O Serial Data
Legend: I = Input, O = Output, P = Power
Note 1: See Figure 5-1 for more information.
2: All power supply (VDD) and ground (VSS) pins must be connected.
Flash Memory Programming Specification
PIC18F2XK20/4XK20
DS41297F-page 2 Advance Information © 2009 Microchip Technology Inc.
FIGURE 2-1: 28-PIN SDIP, SSOP AND SOIC PIN DIAGRAMS
FIGURE 2-2: 28-PIN QFN PIN DIAGRAMS
10
11
2
3
4
5
6
1
8
7
9
12
13
14 15
16
17
18
19
20
23
24
25
26
27
28
22
21
MCLR/VPP/RE3
RA0
RA1
RA2
RA3
RA4
RA5
VSS
OSC1
OSC2
RC0
RC1
RC2
RC3
RB7/PGD
RB6/PGC
RB5/PGM
RB4
RB3
RB2
RB1
RB0
VDD
VSS
RC7
RC6
RC5
RC4
PIC18F2XK20
SDIP, SSOP, SOIC (300 MIL)
Note: The following devices are included in 28-pin SDIP, SSOP and SOIC parts: PIC18F23K20, PIC18F24K20,
PIC18F25K20, PIC18F26K20.
10 11
2
3
6
1
18
19
20
21
22
12 13 14 15
8
716
17
232425262728
9
RC0
5
4
RB7/PGD
RB6/PGC
RB5/PGM
RB4
RB3
RB2
RB1
RB0
VDD
VSS
RC7
RC6
RC5
RC4
MCLR/VPP/RE3
RA0
RA1
RA2
RA3
RA4
RA5
VSS
OSC1
OSC2
RC1
RC2
RC3
PIC18F2XK20
Note: The following devices are included in 28-pin QFN parts: PIC18F23K20, PIC18F24K20, PIC18F25K20,
PIC18F26K20.
28-Pin QFN
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 3
PIC18F2XK20/4XK20
FIGURE 2-3: 40-PIN PDIP PIN DIAGRAMS
FIGURE 2-4: 44-PIN TQFP PIN DIAGRAMS
40-PIN PDIP (600 MIL)
RB7/PGD
RB6/PGC
RB5/PGM
RB4
RB3
RB2
RB1
RB0
VDD
VSS
RD7
RD6
RD5
RD4
RC7
RC6
RC5
RC4
RD3
RD2
MCLR/VPP/RE3
RA0
RA1
RA2
RA3
RA4
RA5
RE0
RE1
RE2
VDD
VSS
OSC1
OSC2
RC0
RC1
RC2
RC3
RD0
RD1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
PIC18F4XK20
Note: The following devices are included in 40-pin PDIP parts: PIC18F43K20, PIC18F44K20, PIC18F45K20,
PIC18F46K20.
44-PIN TQFP
10
11
2
3
6
1
18
19
20
21
22
12
13
14
15
38
8
7
44
43
42
41
40
39
16
17
29
30
31
32
33
23
24
25
26
27
28
36
34
35
9
37
RA3
RA2
RA1
RA0
MCLR/VPP/RE3
NC
RB7/PGD
RB6/PGC
RB5/PGM
RB4
NC RC6
RC5
RC4
RD3
RD2
RD1
RD0
RC3
RC2
RC1
NC
NC
RC0
OSC2
OSC1
VSS
VDD
RE2
RE1
RE0
RA5
RA4
RC7
RD4
RD5
RD6
VSS
VDD
RB0
RB1
RB2
RB3
RD7 5
4PIC18F4XK20
Note: The following devices are included in 44-pin TQFP parts: PIC18F43K20, PIC18F44K20, PIC18F45K20,
PIC18F46K20.
PIC18F2XK20/4XK20
DS41297F-page 4 Advance Information © 2009 Microchip Technology Inc.
FIGURE 2-5: 44-PIN QFN PIN DIAGRAMS
44-PIN QFN
Note: The following devices are included in 44-pin QFN parts: PIC18F43K20, PIC18F44K20, PIC18F45K20,
PIC18F46K20.
10
11
2
3
6
1
18
19
20
21
22
12
13
14
15
38
8
7
44
43
42
41
40
39
16
17
29
30
31
32
33
23
24
25
26
27
28
36
34
35
9
37
RA3
RA2
RA1
RA0
MCLR/VPP/RE3
RB7/PGD
RB6/PGC
RB5/PGM
NC RC6
RC5
RC4
RD3
RD2
RD1
RD0
RC3
RC2
RC1
RC0
OSC2
OSC1
VSS
VDD
RA5
RA4
RC7
RD4
RD5
RD6
VSS
VDD
RB0
RB1
RB2
RB3
RD7 5
4VSS
VDD
VDD
RB4
RE0
RE1
RE2
PIC18F4XK20
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 5
PIC18F2XK20/4XK20
2.3 Memory Map s
For the PIC18FX3K20 devices, the code memory
spa ce extends from 000 0h to 01FFFh (8 Kbytes) in two
4-Kbyte blocks. Addresses 0000h through 01FFh,
however, define a “Boot Block” region that is treated
sep arately from Blo ck 0. All of these blocks define code
protection boundaries within the code memory space.
TABLE 2-2: IMPLEMENTATION OF CODE
MEMORY
FIGURE 2-6: MEMORY MAP AND THE CODE MEMORY SPACE FOR PIC18FX3K20 DEVICES
Device Code Memory Size (Bytes)
PIC18F23K20 000000h-001FFFh (8K)
PIC18F43K20
000000h
200000h
3FFFFFh
01FFFFh
Note: Sizes of memory areas are not to scale.
Code Memory
Unimplemented
Read as ‘0
Configuration
and ID
Space
MEMORY SIZE/DEVICE
8Kbytes
(PIC18FX3K20) Address
Range
Boot Block 000000h
0001FFh
Block 0 000200h
000FFFh
Block 1 001000h
001FFFh
Unimplemented
Read ‘0’s
002000h
01FFFFh
PIC18F2XK20/4XK20
DS41297F-page 6 Advance Information © 2009 Microchip Technology Inc.
For PIC18FX4K20 devices, the code memory space
extends from 000000h to 003FFFh (16 Kbytes) in two
8-Kbyte b locks. Addre sses 00000 0h throu gh 0007FF h,
however, define a “Boot Block” region that is treated
separately from Block 0. All of these blocks define code
protection boundaries within the code memory space.
TABLE 2-3: IMPLEMENTATION OF CODE
MEMORY
FIGURE 2-7: MEMORY MAP AND THE CODE MEMORY SPACE FOR PIC18FX4K20 DEVICES
Device Code Memory Size (Bytes)
PIC18F24K20 000000h-003FFFh (16K)
PIC18F44K20
000000h
200000h
3FFFFFh
01FFFFh
Note: Sizes of memory areas not to scale.
Code Memory
Unimplemented
Read as ‘0
Configuration
and ID
Space
MEMORY SIZE/DEVICE
16 Kbytes
(PIC18FX4K20) Address
Range
Boot Block 000000h
0007FFh
Block 0 000800h
001FFFh
Block 1 002000h
003FFFh
Unimplemented
Read ‘0’s
004000h
01FFFFh
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 7
PIC18F2XK20/4XK20
For PIC18FX5K20 devices, the code memory space
extends from 000000h to 007FFFh (32 Kbytes) in four
8-Kbyte bloc ks. Address es 000000h t hrough 000 7FFh,
however, define a “Boot Block” region that is treated
sep arately from Blo ck 0. All of these blocks define code
protection boundaries within the code memory space.
TABLE 2-4: IMPLEMENTATION OF CODE
MEMORY
FIGURE 2-8: MEMORY MAP AND THE CODE MEMORY SPACE FOR PIC18FX5K20 DEVICES
Device Code Memory Size (Bytes)
PIC18F25K20 000000h-007FFFh (32K)
PIC18F45K20
000000h
200000h
3FFFFFh
01FFFFh
Note: Sizes of memory areas not to scale.
Code Memory
Unimplemented
Read as ‘0
Configuration
and ID
Space
MEMORY SIZE/DEVICE
32 Kbytes
(PIC18FX5K20) Address
Range
Boot Block 000000h
0007FFh
Block 0 000800h
001FFFh
Block 1 002000h
003FFFh
Block 2 004000h
005FFFh
Block 3 006000h
007FFFh
Unimplemented
Read ‘0’s
01FFFFh
PIC18F2XK20/4XK20
DS41297F-page 8 Advance Information © 2009 Microchip Technology Inc.
For PIC18FX6K20 devices, the code memory space
extends from 000000h to 00FFFFh (64 Kbytes) in four
16-Kbyte blocks. Addresses 000000h through
0007FFh, how e ve r, define a “Bo ot Bl ock” region that i s
treated separately from Block 0. All of these blocks
define code protection boundaries within the code
memor y space.
TABLE 2-5: IMPLEMENTATION OF CODE
MEMORY
FIGURE 2-9: MEMORY MAP AND THE CODE MEMORY SPACE FOR PIC18FX6K20 DEVICES
Device Code Memory Size (Bytes)
PIC18F26K20 000000h-00FFFFh (64K)
PIC18F46K20
000000h
200000h
3FFFFFh
01FFFFh
Note: Sizes of memory areas not to scale.
Code Memory
Unimplemented
Read as ‘0
Configuration
and ID
Space
MEMORY SIZE/DEVICE
32 Kbytes
(PIC18FX6K20) Address
Range
Boot Block 000000h
0007FFh
Block 0 000800h
003FFFh
Block 1 004000h
007FFFh
Block 2 008000h
00BFFFh
Block 3 00C000h
00FFFFh
Unimplemented
Read ‘0’s
01FFFFh
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 9
PIC18F2XK20/4XK20
In addition to the code memory space, there are three
blocks in the configuration and ID space that are
accessible to the user through table reads and table
writes . Their locations in the memory ma p are shown in
Figure 2-10.
Users may store identification information (ID) in eight
ID registers. These ID registers are mapped in
addresses 200000h thro ugh 200007h. The ID locations
read out normally , even after code protection is applied.
Locations 300000h through 30000Dh are reserved for
the Confi guratio n bits . These bi t s select var iou s devic e
options and are described in Section 5.0 “Configura-
tion Word”. These Configuration bits read out
normally, even after code protection.
Locatio ns 3FFFF Eh and 3FFF FFh ar e reserved for the
device ID bits. Thes e bits may be us ed by the program-
mer to identify what device type is being programmed
and are described in Section 5.0 “Configuration
Word. These device ID bits read out normally, even
after code protection.
2.3.1 MEMOR Y ADDRESS POINTER
Memory in the address space, 0000000h to 3FFFFFh,
is addressed via the Table Pointer register, which is
comprised of three Pointer registers:
TBLPTRU, at RAM address 0FF8h
TBLPTRH, at RAM address 0FF7h
TBLPTRL, at RAM address 0FF6h
The 4-bit command, ‘0000’ (core instruction), is used to
load the Table Pointer prior to using any read or write
operations.
FIGURE 2-10: CONFIG URATION AND ID LOCATIONS FOR PIC18F2XK20/4XK20 DEVICES
TBLPTRU TBLPTRH TBLPTRL
Addr[21:16] Addr[15:8] Addr[7:0]
ID Location 1 200000h
ID Location 2 200001h
ID Location 3 200002h
ID Location 4 200003h
ID Location 5 200004h
ID Location 6 200005h
ID Location 7 200006h
ID Location 8 200007h
CONFIG1L 300000h
CONFIG1H 300001h
CONFIG2L 300002h
CONFIG2H 300003h
CONFIG3L 300004h
CONFIG3H 300005h
CONFIG4L 300006h
CONFIG4H 300007h
CONFIG5L 300008h
CONFIG5H 300009h
CONFIG6L 30000Ah
CONFIG6H 30000Bh
CONFIG7L 30000Ch
CONFIG7H 30000Dh
Device ID1 3FFFFEh
Device ID2 3FFFFFh
Note: Sizes of memory areas are not to scale.
000000h
1FFFFFh
3FFFFFh
01FFFFh Code Memory
Unimplemented
Read as0
Configuration
and ID
Space
2FFFFFh
PIC18F2XK20/4XK20
DS41297F-page 10 Advance Information © 2009 Microchip Technology Inc.
2.4 High-Level Overview of the
Programming Process
Figure 2-11 shows the high-level overview of the
programming process. First, a Bulk Erase is performed.
Next, the code memory, ID locations and data
EEPROM are programmed. These memories are then
verified to ensure that programming was successful. If
no errors are detected, the Configuration bits are then
programmed and verified.
FIGURE 2-11 : HIGH-LEVEL
PROGRAMMING FLOW
2.5 Entering and Exiting High-Voltage
ICSP Program/Verify Mode
As shown in Figure 2-12, the High-Voltage ICSP
Program/Verify mode is entered by holding PGC and
PGD low and then raising MCLR/VPP/RE3 to VIHH
(high voltage). Once in this mode, the code memory,
dat a EEPROM , ID l ocatio ns and Configu rati on bit s ca n
be accessed and programmed in serial fashion.
Figure 2-13 shows the exit sequence.
The sequence that enters the device into the Program/
V erify mode places all unused I/Os in the high-impedance
state.
FIGURE 2-12: ENTERING HIGH-VOLTAGE
PROGRAM/VERIFY MODE
FIGURE 2-13: EXITING HIGH-VOLTAGE
PROGRAM/VERIFY MODE
Start
Program Memory
Program IDs
Program Data EE
Verify Program
Veri fy IDs
Verify Data
Program
Configuration Bits
Verify
Configuration Bits
Done
Perform Bulk
Erase
MCLR/VPP/RE3
P12
PGD
PGD = Input
PGC
VDD
D110
P13
P1
MCLR/VPP/RE3
P16
PGD
PGD = Input
PGC
VDD
D110
P17
P1
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 11
PIC18F2XK20/4XK20
2.6 Entering and Exiting Low-Voltage
ICSP Program/Verify Mode
When the LVP Configuration bit is ‘1’ (see Section 5.3
“Single-Supply ICSP Programming”), the Low-
V ol tage ICSP m ode is ena bled. As sho wn in Figure 2-14,
Low-Voltage ICSP Program/Verify mode is entered by
holding PGC and PGD low, placing a logic high on PGM
and then raising MCLR/VPP/RE3 to VIH. In this mode, the
RB5/P GM pin is ded icated to the prog ramming functi on
and ceases to be a general purpose I/O pin. Figure 2-15
show s th e e x it sequen ce .
The sequence that enters the device into the Program/
V erify mode places all unused I/Os in the high-impedance
state.
FIGURE 2-14: ENTERING LOW-VOLTAGE
PROGRAM/VERIFY MODE
FIGU RE 2 -1 5: EXITING LOW-VOLTAGE
PROGRAM/VERIFY MODE
2.7 Serial Program/Verify Operation
The PGC pin is used as a clock input pin and the PGD
pin is used for entering command bits and data input/
output during serial operation. Comman ds and data a re
transmitted on the rising edge of PGC, latched on the
falling edge of PGC and are Least Significant bit (LSb)
first.
2.7.1 4-BIT COMMANDS
All instructions are 20 bits, consisting of a leading 4-bit
command followed by a 16-bit operand, which depends
on the type of command being executed. To input a
command, PGC is cycled four times. The commands
needed for programming and verification are shown in
Table 2-6.
Depending on the 4-bit command, the 16-bit operand
represents 16 bits of input data or 8 bits of input data
and 8 bits of output data.
Throughout this speci fic ati on, co mm an ds and data are
presented as illustrated in Table 2-7. The 4-bit com-
mand is shown Most Significant bit (MSb) first. The
command operand, or “Data Payload”, is shown
<MSB><LSB>. Figure 2-16 demonstrates how to
serially present a 20-bit command/operand to the
device.
2.7.2 CORE INSTRUCTION
The core instruction passes a 16-bit instruction to the
CPU core for execution. This is needed to set up
registers as approp riate for us e with other co mmand s.
TABLE 2-6: COMMANDS FOR
PROGRAMMING
MCLR/VPP/RE3
P12
PGD
PGD = Input
PGC
PGM
P15
VDD
VIH
VIH
MCLR/VPP/RE3
P16
PGD
PGD = Input
PGC
PGM
P18
VDD
VIH
VIH
Description 4-Bit
Command
Core Instruction
(Shift in16-bit instruction) 0000
Shift out TABLAT register 0010
Table R ead 1000
Table Read, post-increm en t 1001
Table Read, post-decrem ent 1010
Table R ead , pre-in cre men t 1011
Table Write 1100
Table Write, post-increment by 2 1101
Table Write, start programming,
post-increment by 2 1110
Table Write, start programming 1111
PIC18F2XK20/4XK20
DS41297F-page 12 Advance Information © 2009 Microchip Technology Inc.
TABLE 2-7: SAMPLE COMMAND
SEQUENCE
FIGURE 2-16: TABLE WRITE, POST-INCREMENT TIMING DIAGRAM (1101)
4-Bit
Command Data
Payload Core Instruction
1101 3C 40 Table Write,
post-increment by 2
1234
PGC P5
PGD
PGD = Input
5678 1234
P5A
910 11 13 15 161412
Fetch Next 4-bit Command
1011
1234
nnnn
P3
P2 P2A
000000 010001111 0
04C3
P4
4-bit Command 16- bit Data Payload
P2B
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 13
PIC18F2XK20/4XK20
3.0 DEVICE PROGRAMMING
Programming includes the ability to erase or write the
various memory regions within the device.
In all cases, except high-voltage ICSP Bulk Erase, the
EECON1 register must be configured in order to
operate on a particular memory region.
When using the EECON1 register to act on code
memory , the EEPGD bit must be set (EECON1<7> = 1)
and the CFGS bit must be cleared (EECON1<6> = 0).
The WREN bit must be set (EECON1<2> = 1) to
enable writes of any sort (e.g., erases) and this must be
done prior to initiating a write sequence. The FREE bit
must be set (EECON1<4> = 1) in order to erase the
program space being pointed to by the Table Pointer.
The erase or write sequence is initiated by setting the
WR bit (EECON1<1> = 1). It is strongl y recom me nde d
that the WREN bit only be set immediately prior to a
program or erase.
3.1 ICSP Erase
3.1.1 HIGH-VOLTAGE ICSP BULK ERASE
Erasing code or data EEPROM is accomplished by
configuring two Bulk Erase Control registers located at
3C000 4h an d 3C 000 5h. Code memo ry may be erase d
portions at a time, or the user may erase the entire
device in one action. Bulk Erase operations will also
clear any code-protect settings associated with the
memory block erased. Erase options are detailed in
Table 3-1. If data EEPROM is code-protected
(CPD = 0), the user must request an erase of data
EEPROM (e.g., 0084h as shown in Table 3-1).
TABLE 3-1: BULK ERASE OPTIONS
The actual Bulk Erase function is a self-timed
operation. Once the erase has started (falling edge of
the 4th PGC after the NOP command), serial execution
will cease until the erase completes (parameter P11).
During this time, PGC may continue to toggle but PGD
must be held low.
The code s equence to eras e the entire devic e is shown
in Table 3-2 and the flowchart is shown in Figure 3-1.
TABLE 3-2: BULK ERASE COMMAND
SEQUENCE
FIGURE 3-1: BULK ERASE FLOW
Description Data
(3C0005h:3C0004h)
Chip Erase 0F8Fh
Erase Us er ID 0088h
Erase Data EEPROM 0084h
Erase Boot Block 0081h
Erase Config Bits 0082h
Erase Code EEPROM Block 0 0180h
Erase Code EEPROM Block 1 0280h
Erase Code EEPROM Block 2 0480h
Erase Code EEPROM Block 3 0880h
Note: A Bulk Erase is the only way to reprogram
code-protect bits from an “on” state to an
“off” state.
4-Bit
Command Data
Payload Core Instruction
0000 0E 3C MOVLW 3Ch
0000 6E F8 MOVWF TBLPTRU
0000 0E 00 MOVLW 00h
0000 6E F7 MOVWF TBLPTRH
0000 0E 05 MOVLW 05h
0000 6E F6 MOVWF TBLPTRL
1100 0F 0F Write 0Fh to 3C0005h
0000 0E 3C MOVLW 3Ch
0000 6E F8 MOVWF TBLPTRU
0000 0E 00 MOVLW 00h
0000 6E F7 MOVWF TBLPTRH
0000 0E 04 MOVLW 04h
0000 6E F6 MOVWF TBLPTRL
1100 8F 8F Write 8F8Fh TO 3C0004h
to erase entire device.
0000 00 00 NOP
0000 00 00 Hold PGD low until erase
completes.
Start
Done
Write 8F8Fh to
3C0004h to Erase
Entire Device
Write 0F0Fh
Delay P11 + P10
Time
to 3C0005h
PIC18F2XK20/4XK20
DS41297F-page 14 Advance Information © 2009 Microchip Technology Inc.
FIGURE 3-2: BULK ERASE TIMING DIAGRAM
3.1.2 LOW-VOLTAGE ICSP BULK ERASE
When using low-voltage ICSP, the part must be
suppli ed by the volta ge specified in para meter D11 1 if a
Bulk Erase is to be executed. All other Bulk Erase
details as described above apply.
If it is determined that a program memory erase must
be perform ed at a sup ply vo lta ge below the Bul k Erase
limit, refer to the erase methodology described in
Section 3.1.3 “ICSP Row Erase” and Section 3.2.1
“Modify ing Code Me mory”.
If it is determined that a data EEPROM erase must be
performed at a supply voltage below the Bulk Erase
limit, follow the methodology described in Section 3.3
“Data EEPROM Programming” and write ‘1’s to the
array.
3.1.3 ICSP ROW ERASE
Regardless of whether high or low-voltage ICSP is
used, i t i s pos s ibl e t o e ras e one row (64 by te s of dat a),
provi ded the bl ock is not c ode or wri te-protecte d. Rows
are located at static boundaries beginning at program
memory address 000000h, extending to the internal
program memory limit (see Section 2.3 “Memory
Maps”).
The Row Erase duration is self-timed. After the WR bit
in EECON1 is set, two NOPs are issued. Erase starts
upon the 4th PG C of the secon d NOP. It ends when th e
WR bit is cleared by hardware.
The code sequence to Row Erase a PIC18F2XK20/
4XK20 device is shown in Table 3-3. The flowchart
shown in Figure 3-3 depicts the logic necessary to com-
pletely era se a PIC18F2XK20/4XK20 device. The tim ing
diagram for Row Erase is identical to the data EEPROM
write timing shown in Figure 3-7.
n
1234 121516 123
PGC
P5 P5A
PGD
PGD = Input
0
0011
P11
P10
Erase Time
000000
12
00
4
0
1 2 15 16
P5
123
P5A
4
0000 n
4-bit Comm an d 4-bit Command 4-bit Command
16-bit
Data Payload
16-bit
Data Payload 16-bit
Data Payload
11
Note: The TBLPTR register can point at any byte
within the row intended for erase.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 15
PIC18F2XK20/4XK20
TABLE 3-3: ERASE CODE MEMORY CODE SEQUENCE
4-bit
Command Data Payload Core Instruction
Step 1: Direct access to code memory and enable writes.
0000
0000
0000
8E A6
9C A6
84 A6
BSF EECON1, EEPGD
BCF EECON1, CFGS
BSF EECON1, WREN
Step 2: Point to first row in code memory.
0000
0000
0000
6A F8
6A F7
6A F6
CLRF TBLPTRU
CLRF TBLPTRH
CLRF TBLPTRL
Step 3: Enable erase and erase singl e row.
0000
0000
0000
0000
88 A6
82 A6
00 00
00 00
BSF EECON1, FREE
BSF EECON1, WR
NOP
NOP Erase starts on the 4th clock of this instruction
Step 4: Poll WR bit. Repeat until bit is clear.
0000
0000
0000
0010
50 A6
6E F5
00 00
<MSB><LSB>
MOVF EECON1, W, 0
MOVWF TABLAT
NOP
Shift out data(1)
Step 5: Hold PGC low for time P10.
Step 6: Repeat step 3 with Address Pointer incremented by 64 until all rows are erased.
Step 7: Disable writes.
0000 94 A6 BCF EECON1, WREN
Note 1: See Figure 4-4 for details on shift out data timing.
PIC18F2XK20/4XK20
DS41297F-page 16 Advance Information © 2009 Microchip Technology Inc.
FIGURE 3-3: SINGLE ROW ERASE CODE MEMORY FLOW
Done
Start
All
Rows
done?
No
Yes
Addr = 0
Configure
Device for
Row Erases
Addr = Addr + 64
Perform Eras e
Sequence
WR Bit
Clear? No
Yes
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 17
PIC18F2XK20/4XK20
3.2 Code Memory Programming
Programming code memory is accomplished by first
loading data into the write buffer and then initiating a
programming sequence. The write and erase buffer
sizes shown in Ta ble 3- 4 can be m apped to any loca-
tion of the same size b eginni ng at 000 000h. The ac tual
memory write sequence takes the contents of this buf-
fer and programs the proper amount of code memory
that contains the Table Pointer.
The programming duration is externally timed and is
controlled by PGC. After a Start Programming
command is issued (4-bit command, ‘1111’), a NOP is
issued , where th e 4t h PGC is he ld hig h for the dur ation
of the programming time, P9.
After PGC is brought low, the programming sequence
is terminated. PGC must be held low for the time
specified by parameter P10 to allow high-voltage
discharge of the memory array.
The code sequence to program a PIC18F2XK20/
4XK20 device is shown in Table 3-5. The flowchart
shown in Figure 3-4 depicts the logic necessary to
completely write a PIC18F2XK20/4XK20 device. The
timing diagram that details the Start Programming
command and parameters P9 and P10 is shown in
Figure 3-5.
TABLE 3-4: WRITE AND ERASE BUFFER SIZES
TABLE 3-5: WRITE CODE MEMORY CODE SEQUENCE
Note: The TBLPTR register must point to the
same region when initiating the program-
ming sequence as it did when the write
buffers were loaded.
Devices (Arranged by Family) Write Buffer Size
(bytes) Erase Size (bytes)
PIC18F26K20, PIC18F46K20 64 64
PIC18F24K20, PIC18F25K20, PIC18F44K20, PIC18F45K20 32 64
PIC18F23K20, PIC18F43K20 16 64
4-bit
Command Data Payload Core Instruction
Step 1: Direct access to code memory.
0000
0000
0000
8E A6
9C A6
84 A6
BSF EECON1, EEPGD
BCF EECON1, CFGS
BSF EECON1, WREN
Step 2: Point to row to write.
0000
0000
0000
0000
0000
0000
0E <Addr[21:16]>
6E F8
0E <Addr[15:8]>
6E F7
0E <Addr[7:0]>
6E F6
MOVLW <Addr[21:16]>
MOVWF TBLPTRU
MOVLW <Addr[15:8]>
MOVWF TBLPTRH
MOVLW <Addr[7:0]>
MOVWF TBLPTRL
Step 3: Load write buffer. Repeat for all but the last two bytes.
1101 <MSB><LSB> Write 2 bytes and post-increment address by 2.
Step 4: Load write buffer for last two bytes and start programming.
1111
0000 <MSB><LSB>
00 00 Write 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
To cont inue wr iting dat a, repea t step s 2 through 4, wh ere the Ad dress Pointer i s increm ented b y 2 at e ach it eration of
the loop.
PIC18F2XK20/4XK20
DS41297F-page 18 Advance Information © 2009 Microchip Technology Inc.
FIGURE 3-4: PROGRAM CODE MEMORY FLOW
FIGURE 3-5: TABLE WRITE AND START PROGRAMMING INSTRUCTION
TIMING DIAGRAM (1111)
Start Write Sequence
All
locations
done?
No
Done
Start
Yes
Hold PGC Low
for Tim e P1 0
Load 2 Bytes
to Wri te
Buffer at <Addr>
All
bytes
written?
No
Yes
and Hold PGC
High until Done
N = 1
LoopCount = 0
Configure
Device for
Writes
N = 1
LoopCount =
LoopCount + 1
N = N + 1
and Wait P9
1234 1 2 15 16 123 4
PGC
P5A
PGD
PGD = Input
n
1111
34 65
P9
(1)
P10
Programming Time
nnn nn n n
00
12
0
00
16-bit
Data Payload
0
3
0
P5
4-bit Command 16-bit Data Payload 4-bit Comm an d
Note 1: Use P9A for User ID and Configuration Word programming.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 19
PIC18F2XK20/4XK20
3.2.1 MODIFYING CODE MEMORY
The previous programming example assumed that the
device has been Bulk Erased prior to programming
(see Section 3.1.1 “High-V olt age ICSP Bulk Erase”).
It may be the case, however, that the user wishes to
modify only a section of an already programmed
device.
The appro priate num ber of byte s required for the eras e
buffer must be read out of code memory (as described
in Section 4.2 “Verify Code Memory and ID Loca-
tions”) and buffered. Modifications can be made on
this buffer. Then, the block of code memory that was
read out must be erased and rewritten with the
modified data.
The WREN bit must be set if the WR bit in EECON1 is
used to initiate a write sequence.
TABLE 3-6: MODIFYING CODE MEMORY
4-bit
Command Data Payload Core Instruction
Step 1: Direct access to code memory.
0000
0000 8E A6
9C A6 BSF EECON1, EEPGD
BCF EECON1, CFGS
Step 2: Read code memory into buffer (Section 4.1 “Read Code Memory, ID Locations and Configuration Bits”).
Step 3: Set the Table Pointer for the block to be erased.
0000
0000
0000
0000
0000
0000
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
MOVLW <Addr[21:16]>
MOVWF TBLPTRU
MOVLW <Addr[8:15]>
MOVWF TBLPTRH
MOVLW <Addr[7:0]>
MOVWF TBLPTRL
Step 4: Enable memory writes and setup an erase.
0000
0000 84 A6
88 A6 BSF EECON1, WREN
BSF EECON1, FREE
Step 5: Initiat e er ase.
0000
0000
0000
0000
88 A6
82 A6
00 00
00 00
BSF EECON1, FREE
BSF EECON1, WR
NOP
NOP Erase starts on the 4th clock of this instruction
Step 6: Poll WR bit. Repeat unti l bit is clear.
0000
0000
0000
0000
50 A6
6E F5
00 00
<MSB><LSB>
MOVF EECON1, W, 0
MOVWF TABLAT
NOP
Shift out data(1)
Step 7: Load write buffer. The correct bytes will be selected based on the Table Pointer.
0000
0000
0000
0000
0000
0000
1101
1111
0000
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
<MSB><LSB>
<MSB><LSB>
00 00
MOVLW <Addr[21:16]>
MOVWF TBLPTRU
MOVLW <Addr[8:15]>
MOVWF TBLPTRH
MOVLW <Addr[7:0]>
MOVWF TBLPTRL
Write 2 bytes and post-increment address by 2.
Repeat as many times as necessary to fill the write buffer
Write 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
To continue modifying dat a, repeat Steps 2 through 6, w here the Addre ss Pointer is in cremented by the appro priate numbe r of bytes
(see Table 3-4) at each iteration of the loop. The write cycle must be repeated eno ugh times to completely rewrite the content s of the
erase buffer.
Step 8: Disa ble writes.
0000 94 A6 BCF EECON1, WREN
PIC18F2XK20/4XK20
DS41297F-page 20 Advance Information © 2009 Microchip Technology Inc.
3.3 Data EEPROM Programming
Data EEPROM is accessed one byte at a time via an
Address Pointer (register pair EEADRH:EEADR) and a
data latch (EEDATA). Data EEPROM is written by
loading EEADRH:EEADR with the desired memory
locatio n, EEDATA with the dat a to be written and initiat-
ing a memory write by appropriately configuring the
EECON1 register . A byte write automatically erases the
location and writes the new data (erase-before-write).
When using the EECON1 register to perform a data
EEPROM write, both the EEPGD and CFGS bits must
be cleared (EECON1<7:6> = 00). The WREN bit must
be set (EECON1< 2> = 1) to enable writes of any sort
and this must be done prior to initiating a write
sequen ce. The write sequence is initiated by setting the
WR bit (EECON1<1> = 1).
The write begins on the falling edge of the 24th PGC
after the WR bit is set. It ends when the WR bit is
cleared by hardware.
After the programming sequence terminates, PGC
must be held low for the time specified by parameter
P10 to allow high-voltage discharge of the memory
array.
FIGURE 3-6: PROGRAM DAT A FL OW
FIGURE 3-7: DATA EEPROM WRITE TIMING DIAGRAM
Start
St art Write
Set Data
Done
No
Yes
done?
Enable Write
Sequence
Set Address
WR bit
clear? No
Yes
n
PGC
PGD
PGD = Input
0000
BSF EECON1, WR4-bit Command
1234 121516
P5 P5A
P10 12
n
Poll WR bit, Repeat until Clear 16-bit Data
Payload
1234 121516 123
P5 P5A
41 2 15 16
P5 P5A
0000
MOVF EECON1, W, 0
4-bit Command
0000
4-bit Command Shift Out Data
MOVWF TABLAT
PGC
PGD
(see below)
(see Figure 4-4)
PGD = Input PGD = Output
Poll WR bit
P11A
P5A
2 NOP commands
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 21
PIC18F2XK20/4XK20
TABLE 3-7: PROGRAMMING DATA MEMORY
4-bit
Command Data Payload Core Instruction
Step 1: Direct access to data EEPROM.
0000
0000 9E A6
9C A6 BCF EECON1, EEPGD
BCF EECON1, CFGS
Step 2: Set the data EEPROM Address Pointer.
0000
0000
0000
0000
0E <Addr>
6E A9
OE <AddrH>
6E AA
MOVLW <Addr>
MOVWF EEADR
MOVLW <AddrH>
MOVWF EEADRH
Step 3: Load the data to be written.
0000
0000 0E <Data>
6E A8 MOVLW <Data>
MOVWF EEDATA
Step 4: Enable memory wri tes .
0000 84 A6 BSF EECON1, WREN
Step 5: Initiate write.
0000
0000
0000
82 A6
00 00
00 00
BSF EECON1, WR
NOP
NOP ;write starts on 4th clock of this instruction
Step 6: Poll WR bit, repeat until the bit is clear.
0000
0000
0000
0010
50 A6
6E F5
00 00
<MSB><LSB>
MOVF EECON1, W, 0
MOVWF TABLAT
NOP
Shift out data(1)
Step 7: Hold PGC low for time P10.
Step 8: Disable writes.
0000 94 A6 BCF EECON1, WREN
Repeat steps 2 through 8 to write more data.
Note 1: See Figure 4-4 for details on shift out data timing.
PIC18F2XK20/4XK20
DS41297F-page 22 Advance Information © 2009 Microchip Technology Inc.
3.4 ID Location Programming
The ID locations are programmed much like the code
memory. The ID registers are mapped in addresses
200000h through 200007h. These locations read out
normally even after code protection.
Table 3-8 demonst rates the cod e sequenc e required to
write the ID locations.
In order to modif y the ID l ocations , refer to the me thod-
ology described in Section 3.2.1 “Modifying Code
Memory. As with code memory, the ID loc ations m ust
be erased before being modified.
When VDD is below the minimum for Bulk Erase
operation, ID locations can be cleared with the Row
Erase method described in Section 3.1.3 “ICSP Row
Erase”.
TABLE 3-8: WRITE ID SEQUENCE
Note: The user only needs to fill the first 8 bytes
of the write buffer in order to write the ID
locations.
4-bit
Command Dat a Payl oad Core Instru ction
Step 1: Direct access to code memory.
0000
0000
0000
8E A6
9C A6
84 A6
BSF EECON1, EEPGD
BCF EECON1, CFGS
BSF EECON1, WREN
Step 2: Set Ta ble Pointer to ID. Load write buffer with 8 bytes and write.
0000
0000
0000
0000
0000
0000
1101
1101
1101
1111
0000
0E 20
6E F8
0E 00
6E F7
0E 00
6E F6
<MSB><LSB>
<MSB><LSB>
<MSB><LSB>
<MSB><LSB>
00 00
MOVLW 20h
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPTRH
MOVLW 00h
MOVWF TBLPTRL
Write 2 bytes and post-increment address by 2.
Write 2 bytes and post-increment address by 2.
Write 2 bytes and post-increment address by 2.
Write 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 23
PIC18F2XK20/4XK20
3.5 Boot Block Programming
The code sequence detailed in Table 3-5 should be
used, except t hat the a ddress u sed in “Step 2” will be i n
the range of 000000h to 0007FFh.
3.6 Configuration Bit s Programming
Unlike code memory, the Configuration bits are
programmed a byte at a time. The Table Write, Begin
Programm ing 4-bi t command (‘1111’) is used, but only
8 bits of the following 16-bit payload will be written. The
LSB of the payload will be written to even addresses
and the MSB will be written to odd addresses. The
code sequence to program two consecutive configura-
tion locations is shown in Table 3-9. See Figure 3-5 for
the timing diagram.
TABLE 3-9: SET ADDRESS POINTER TO CONFIGURATION LOCATION
FIGURE 3-8: CONFIGURATION PROGRAMMING FLOW
Note: The address must be explicitly written for
each byte programmed. The addresses
can not be increm en ted in this mode .
4-bit
Command Dat a Payl oad Cor e Instru c tion
Step 1: Direct access to config memory.
0000
0000
0000
8E A6
8C A6
84 A6
BSF EECON1, EEPGD
BSF EECON1, CFGS
BSF EECON1, WREN
Step 2(1): Set Table Pointer for config byte to be written. Write even/odd addresses.
0000
0000
0000
0000
0000
0000
1111
0000
0000
0000
1111
0000
0E 30
6E F8
0E 00
6E F7
0E 00
6E F6
<MSB ignored><LSB>
00 00
0E 01
6E F6
<MSB><LSB ignored>
00 00
MOVLW 30h
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPRTH
MOVLW 00h
MOVWF TBLPTRL
Load 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
MOVLW 01h
MOVWF TBLPTRL
Load 2 bytes and start programming.
NOP - hold PGC high for time P9A and low for time P10.
Note 1: Enabling the wri te protec tion of Configura tion bi t s (WR TC = 0 in CONFIG6H) will prevent further writing of
Configuration bits. Always write all the Configuration bits before enabling the write protection for
Configuration bits.
Load Even
Configuration
Start
Program Program
MSB
Delay P9 and P10
Time for Write
LSB
Load Odd
Configuration
Address Address
Done
Start
Delay P9 and P10
Time for Write
Done
PIC18F2XK20/4XK20
DS41297F-page 24 Advance Information © 2009 Microchip Technology Inc.
4.0 READING THE DEVICE
4.1 Read Code Memory, ID Locations
and Configurati on Bits
Code memory is accessed one byte at a time via the
4-bit command, ‘1001’ (table read, post-increment).
The co ntents of memory p ointed to by the Table Po inter
(TBLPTRU:TB LPTRH:TBLPTRL) are serially output on
PGD.
The 4-bit command is shifted in LSb first. The read is
executed during the next 8 clocks, then shifted out on
PGD during the last 8 clocks, LSb to MSb. A delay of
P6 must be introduced after the falling edge of the 8th
PGC of the op erand to allow PGD to t rans iti on fr om an
input to an output. During this time, PGC must be held
low (see Figure 4-1). This operation also increments
the Table Pointer by one, pointing to the next byte in
code memory for the next read.
This technique will work to read any memory in the
000000h to 3FFFFFh address s p a ce, s o i t a ls o a ppl ie s
to the reading of the ID and Configuration registers.
TABLE 4-1: READ CODE MEMORY SEQUENCE
FIGURE 4-1: TABLE READ POST-INCREMENT INSTRUCTION TIMING DIAGRAM (1001)
Note: When table read protection is enabled, the
first read access to a protected block
should be discarded and the read repeated
to retrieve valid data. Subsequent reads of
the same block can be performed normally.
4-bit
Command Data Payload Core Instruction
Step 1: Set Ta ble Pointer
0000
0000
0000
0000
0000
0000
0E <Addr[21:16]>
6E F8
0E <Addr[15:8]>
6E F7
0E <Addr[7:0]>
6E F6
MOVLW Addr[21:16]
MOVWF TBLPTRU
MOVLW <Addr[15:8]>
MOVWF TBLPTRH
MOVLW <Addr[7:0]>
MOVWF TBLPTRL
Step 2: Read memory and then shift out on PGD, LSb to MSb
1001 00 00 TBLRD *+
1234
PGC
P5
PGD
PGD = Input
Shift Data Out
P6
PGD = Output
5678 1234
P5A
910 11 13 15 161412
Fetch Next 4-bit Command
1001
PGD = Input
LSb MSb
123456
1234
nnnn
P14
Note 1: Magnification of the high-impedance delay between PGC and PGD is shown in Figure 4-6.
(Note 1)
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 25
PIC18F2XK20/4XK20
4.2 Verify Code Memory and ID
Locations
The veri fy step invo lves read ing back the code memo ry
space and comparing it against the copy held in the
programmer’s buffer. Memory reads occur a single byte
at a time, so two bytes must be read to compare
against the word in the programmer’s buffer. Refer to
Section 4.1 “Read Code Memory, ID Locations and
Configuration Bits” for implementation details of
reading co de mem ory.
The Table Pointer must be manually set to 200000h
(base address of the ID locations) once the code
memory has been verified. The post-increment feature
of the table read 4-bit command can not be used to
increment the Table Pointer beyond the code memory
spac e. In a 6 4-Kbyte d evice, fo r example, a post-i ncre-
ment read of address FFFFh will wrap t he Table Pointer
back to 000000h, rather than point to unimplemented
address 010000h.
FIGURE 4-2: VERIFY CODE MEMORY FLOW
Read Low Byte
Read High Byte
Does
Word = Expect
data? Failure,
Report
Error
All
code memory
verified?
No
Yes
No
Set TBLP TR = 0
Start
Set TBLPTR = 200000h
Yes
Read Low Byte
Read High byte
Does
Word = Expect
data? Failure,
Report
Error
All
ID locations
verified?
No
Yes
Done
Yes
No
with Post-increment
with Post-increment Increment
Pointer
with Post-Increment
with Post-Increment
PIC18F2XK20/4XK20
DS41297F-page 26 Advance Information © 2009 Microchip Technology Inc.
4.3 Verify Configuration Bits
A configuration address may be read and output on
PGD via th e 4-bit co mmand, ‘1001’. Config uration dat a
is read and written in a byte-wise fashion, so it is not
necessary to merge two bytes into a word prior to a
compare. The result may then be immediately
compared to the appropriate configuration data in the
programmer’s memory for verification. Refer to
Section 4.1 “Read Code Memory, ID Locations and
Configuration Bits” for implementation details of
reading co nfiguration data.
4.4 Read Data EEPROM Memory
Data EEPROM is accessed one byte at a time via an
Address Pointer (register pair EEADRH:EEADR) and a
data latch (EEDAT A). Dat a EEPROM is read by loading
EEADRH:EEADR with the desired memory location
and initi ating a m emory read by approp riat ely con figur-
ing the EECON1 register. The data will be loaded into
EEDATA, where it may be serially output on PGD via
the 4-bit command, ‘0010’ (Shift Out Data Holding
register). A delay of P6 must be introduced after the
falling edge of the 8th PGC of the operand to allow
PGD to transition from an input to an output. During this
time, PGC must be held low (see Figure 4-4).
The command sequence to read a single byte of data
is shown in Table 4-2.
FIGURE 4-3: READ DATA EEPR OM
FLOW
TABLE 4-2: READ DATA EEPROM MEMORY
Start
Set
Address
Read
Byte
Done
No
Yes
done?
Mov e to TA BLAT
Shif t Ou t Da ta
4-bit
Command Data Payload Core Instruction
Step 1: Direct access to data EEPROM .
0000
0000 9E A6
9C A6 BCF EECON1, EEPGD
BCF EECON1, CFGS
Step 2: Set the data EEPROM Address Pointer.
0000
0000
0000
0000
0E <Addr>
6E A9
OE <AddrH>
6E AA
MOVLW <Addr>
MOVWF EEADR
MOVLW <AddrH>
MOVWF EEADRH
Step 3: Initiate a memory read.
0000 80 A6 BSF EECON1, RD
Step 4: Load data into the Serial Data Holding register.
0000
0000
0000
0010
50 A8
6E F5
00 00
<MSB><LSB>
MOVF EEDATA, W, 0
MOVWF TABLAT
NOP
Shift Out Data(1)
Note 1: The <LSB> is undefined. The <MSB> is the data.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 27
PIC18F2XK20/4XK20
FIGURE 4-4: SHIFT OUT DATA HOLDING REGISTER TIMING DIAGRAM (0010)
FIGURE 4-5: HIGH-IMPEDANCE DELAY
4.5 Verify Data EEPROM
A data EEPROM add res s may b e re ad via a se qu enc e
of core instructions (4-bit command, ‘0000’) and then
output on PGD via the 4-bit command,0010’ (TABLA T
register). The result may then be immediately
compared to the appropriate data in the programmer’s
memory for verification. Refer to Section 4.4 “Read
Dat a EEPROM Memory for i mp lem en t ati on details of
reading data EEPROM.
4.6 Blank Check
The term “Blank C heck” means to verify that the device
has no programmed memory cells. All memories must
be verified: code memory, data EEPROM, ID locations
and Configuration bits. The device ID registers
(3FFFFEh:3FFFFFh) should be ignored.
A “blank” or “erased” memory cell will read as a ‘1’.
Therefore, Blank Checking a device merely means to
verify that all bytes read as FFh except the Configura-
tion bit s. Unuse d (reserved) Config uration bits will rea d
0’ (programm ed) . R efer to Table 5-1 for blank con fig u-
ration expect data for the various PIC18F2XK20/
4XK20 devices.
Given that Blank Checking is merely code and data
EEPROM verification with FFh expect data, refer to
Section 4.4 “Read Data EEPROM Memory” and
Section 4.2 “V erify Code Memory and ID Locations”
for implementation details.
FIGURE 4-6: BLANK CHECK FLOW
1234
PGC P5
PGD
PGD = Input
Shift Data Out
P6
PGD = Output
5678 1234
P5A
91011 13 15161412
Fetch Next 4-bit Command
0100
PGD = Input
LSb MSb
123456
1234
nn n n
P14
(Note 1)
Note 1: Magnification of the High-Impedance delay between PGC and PGD is shown in Figure 4-5.
(Note 1)
MSb nn
12
P19
PGD
PGC
P3
Yes
No
Start
Blank Check Device
Is
device
blank? Continue
Abort
PIC18F2XK20/4XK20
DS41297F-page 28 Advance Information © 2009 Microchip Technology Inc.
5.0 CONFIGURATION WORD
The PIC18F2XK20/4XK20 devices have several
Configuration Words. These bits can be set or cleared
to select various device configurations. All other mem-
ory areas should be programmed and verified prior to
setting Configuration Words. These bits may be read
out normally, even after read or code protection. See
Table 5-1 for a list of Configuration bits and device IDs
and Table 5-3 for the Configuration bit descriptions.
5.1 User ID Locations
A user may sto re ide ntif ic atio n inf orm atio n (ID ) in eig ht
ID locations mapped in 200000h:200007h. It is recom-
mended that the Most Significant nibble of each ID be
Fh. In doing so, if the user code inadvertently tries to
execute from the ID space, the ID data will execute as
a NOP.
5.2 Device ID W ord
The device ID word for the PIC18F2XK20/4XK20
devices is located at 3FFFFEh:3FFFFFh. These bits
may be used by the programmer to identify what device
type is b ein g p r ogr am med a nd read out norm all y, even
after code or read protection. See Table 5-2 for a
complete list of device ID values.
FIGURE 5-1: READ DEVICE ID WORD
FLOW
TABLE 5-1: CONFIGURATION BITS AND DEVICE IDs
Start
Set TBLP TR = 3FF FFE
Done
Read Low Byte
Read High Byte
with Post-Increment
with Post-Increment
File Name Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 Default/
Unprogrammed
Value
300001h CONFIG1H IESO FCMEN FOSC3 FOSC2 FOSC1 FOSC0 00-- 0111
300002h CONFIG2L BORV1 BORV0 BOREN1 BOREN0 PWRTEN ---1 1111
300003h CONFIG2H WDTPS3 WDTPS2 WDTPS1 WDTPS0 WDTEN ---1 1111
300005h CONFIG3H MCLRE HFOFST LPT1OSC PBADEN CCP2MX 1--- 1011
300006h CONFIG4L DEBUG XINST —LVP—STVREN10-- -1-1
300008h CONFIG5L —CP3
(1) CP2(1) CP1 CP0 ---- 1111
300009h CONFIG5H CPD CPB 11-- ----
30000Ah CONFIG6L —WRT3
(1) WRT2(1) WRT1 WRT0 ---- 1111
30000Bh CONFIG6H WRTD WRTB WRTC —————111- ----
30000Ch CONFIG7L —EBTR3
(1) EBTR2(1) EBTR1 EBTR0 ---- 1111
30000Dh CONFIG7H —EBTRB -1-- ----
3FFFFEh DEVID1(2) DEV2 DEV 1 DEV0 REV4 REV3 REV2 REV1 RE V0 See Table 5-2
3FFFFFh DEVID2(2) DEV10 DEV9 D E V8 DEV7 DEV6 DEV 5 DEV4 DEV3 See Table 5-2
Legend: x = unknown, u = unchanged, – = unimplemented. Shaded cells are unimplemented, read as ‘0’.
Note 1: These bits are only implemented on specific devices. Refer to Sectio n 2.3 “Memory Maps” to determine which bits
apply based on available memory.
2: DEVID regist ers are read-only and cannot be programmed by the user.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 29
PIC18F2XK20/4XK20
TABLE 5-2: DEVICE ID VALUE
Device Device ID Value
DEVID2 DEVID1
PIC18F23K20 20h 111x xxxx
PIC18F24K20 20h 101x xxxx
PIC18F25K20 20h 011x xxxx
PIC18F26K20 20h 001x xxxx
PIC18F43K20 20h 110x xxxx
PIC18F44K20 20h 100x xxxx
PIC18F45K20 20h 010x xxxx
PIC18F46K20 20h 000x xxxx
Note: The ‘x’s in DEVID1 contain the device revision code.
PIC18F2XK20/4XK20
DS41297F-page 30 Advance Information © 2009 Microchip Technology Inc.
TABLE 5-3: PIC18F2XK20/4XK20 BIT DESCRIPTIONS
Bit Name Configuration
Words Description
IESO CONFIG1H Internal External Switchover bit
1 = Internal External Switchover mode enabled
0 = Internal External Switchover mode disabled
FCMEN CONFIG1H Fa il- Safe C lock Monitor Enable bit
1 = Fail-Safe Cloc k Mo nito r enabl ed
0 = Fail-Safe Cloc k Mo nitor disabled
FOSC<3:0> CONFIG1H Oscillator Selection bits
11xx = External RC oscillator, CLKOUT function on RA6
101x = External RC oscillator, CLKOUT function on RA6
1001 = HFINTOSC, CLKOUT function on RA6, port function on RA7
1000 = HFINTOSC, port function on RA6, port function on RA7
0111 = External RC oscilla tor, port function on RA6
0110 = HS oscillator, PLL enabled (clock frequency = 4 x FOSC1)
0101 = EC oscillator, port function on RA6
0100 = EC osc ill ato r, CLKOUT functi on on RA6
0011 = External RC oscillator, CLKOUT function on RA6
0010 = HS oscillator
0001 = XT osc il lat or
0000 = LP osci lla tor
BORV<1:0> CONFIG2L Brown-out Reset Voltage bits
11 =V
BOR set to 1.8V
10 =V
BOR set to 2.2V
01 =V
BOR set to 2.7V
00 =V
BOR set to 3.0V
BOREN<1 :0> CONFIG2L Brown-ou t Reset Enab le bits
11 = Brown-out Reset enabled in hardware only (SBOREN is disabled)
10 = Brown-out Reset enabled in hardware only and disabled in Sleep mode
(SB O REN is disabled )
01 = Brown-out Reset enabled and controlled by software (SBOREN is enabled)
00 = Brown-out Reset disabled in hardware and software
PWRTEN CONFIG2L Power-up Timer Enable bit
1 = PWRT disabled
0 = PWRT enabled
WDPS<3:0> CONFIG2H Watchdog Timer Postscaler Select bits
1111 = 1:32,768
1110 = 1:16,384
1101 = 1:8,192
1100 = 1:4,096
1011 = 1:2,048
1010 = 1:1,024
1001 = 1:512
1000 = 1:256
0111 = 1:128
0110 = 1 :64
0101 = 1 :32
0100 = 1 :16
0011 = 1 :8
0010 = 1 :4
0001 = 1 :2
0000 = 1 :1
.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 31
PIC18F2XK20/4XK20
WDTEN CONFIG2H Watchdog Timer Enable bit
1 = WDT enabled
0 = WDT disabled (control is placed on SWDTEN bit)
MCLRE CONFIG3H MCLR Pin Enable bit
1 =MCLR pin enabled, RE3 input pin disabled
0 = RE3 input pin enabled, MCLR pin disabled
HFOFST CONFIG3H HFINTOSC Fast Start
1 = HFINTOSC output is not delayed
0 = HFINTOSC output is delayed until oscillator is stable (IOFS = 1)
LPT1 OSC CONFIG3H Low-Power Timer1 O scillator Enabl e bit
1 = Timer1 configured for low-power operation
0 = Timer1 configured for higher power operation
PBADEN CONFIG3H PORTB A/D Enable bit
1 = PORTB A/D<4:0> pins are configured as analog input channels on Reset
0 = PORTB A/D<4:0> pins are configured as digital I/O on Reset
CCP2MX CONFIG3H CCP2 MUX bit
1 = CCP2 input/output is multiplexed with RC1
0 = CCP2 input/output is multiplexed with RB3
DEBUG CONFIG4L Background Debugger Enable bit
1 = Background debugger disabled, RB6 and RB7 configured as general
purpose I/O pins
0 = Background debugger enabled, RB6 and RB7 are dedicated to In-Circuit
Debug
XINST CONFIG4L Extended Instruction Set Enable bit
1 = Instruction set extension and Indexed Addressing mode enabled
0 = Instruction set extension and Indexed Addressing mode disabled
(Legacy mode)
LVP CONF IG4L Low-Voltage Prog rammi ng Enable b it
1 = Low-Voltage Programming enabled, RB5 is the PGM pin
0 = Low-Voltage Programming disabled, RB5 is an I/O pin
STVREN CONFIG4L Stack Overflow/Underflow Reset Enable bit
1 = Reset on stack overflow/underflow enabled
0 = Reset on stack overflow/underflow disabled
TABLE 5-3: PIC18F2XK20/4XK20 BIT DESCRIPTIONS (CONTINUED)
Bit Name Configuration
Words Description
.
PIC18F2XK20/4XK20
DS41297F-page 32 Advance Information © 2009 Microchip Technology Inc.
CP3 CONFIG5L Code Protection bits (Block 3 code memory area)
1 = Block 3 is not code-protected
0 = Block 3 is code-protected
CP2 CONFIG5L Code Protection bits (Block 2 code memory area)
1 = Block 2 is not code-protected
0 = Block 2 is code-protected
CP1 CONFIG5L Code Protection bits (Block 1 code memory area)
1 = Block 1 is not code-protected
0 = Block 1 is code-protected
CP0 CONFIG5L Code Protection bits (Block 0 code memory area)
1 = Block 0 is not code-protected
0 = Block 0 is code-protected
CPD CONFIG5H Code Protection bits (Data EEPROM)
1 = Data EEPROM is not code-protected
0 = Data EEPROM is code-protected
CPB CONFIG5H Code Protection bits (Boot Block memory area)
1 = Boot Block is not code-protected
0 = Boot Block is code-protected
WRT3 CONFIG6L Write Protection bits (Block 3 code memory area)
1 = Block 3 is not write-protected
0 = Block 3 is write- protected
WRT2 CONFIG6L Write Protection bits (Block 2 code memory area)
1 = Block 2 is not write-protected
0 = Block 2 is write- protected
WRT1 CONFIG6L Write Protection bits (Block 1 code memory area)
1 = Block 1 is not write-protected
0 = Block 1 is write- protected
WRT0 CONFIG6L Write Protection bits (Block 0 code memory area)
1 = Block 0 is not write-protected
0 = Block 0 is write-p rotected
WRTD CONFIG6H Write Protection bit (Data EEPROM)
1 = Data EEPROM is not write-protected
0 = Data EEPROM is write-protected
WRTB CONFIG6H Write Protection bit (Boot Block memory area)
1 = Boot Block is not write-prot ected
0 = Boot Block is write-protected
WRTC CONFIG6H Write Protection bit (Configuration registers)
1 = Configuration registers are not write-protected
0 = Configuration registers are write-protected
TABLE 5-3: PIC18F2XK20/4XK20 BIT DESCRIPTIONS (CONTINUED)
Bit Name Configuration
Words Description
.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 33
PIC18F2XK20/4XK20
EBTR3 CONFIG7L Table Read Protection bit (Block 3 code memory area)
1 = Block 3 is not protected from table reads executed in other blocks
0 = Block 3 is pr otected from table reads executed in other blocks
EBTR2 CONFIG7L Table Read Protection bit (Block 2 code memory area)
1 = Block 2 is not protected from table reads executed in other blocks
0 = Block 2 is pr otected from table reads executed in other blocks
EBTR1 CONFIG7L Table Read Protection bit (Block 1 code memory area)
1 = Block 1 is not protected from table reads executed in other blocks
0 = Block 1 is pr otected from table reads executed in other blocks
EBTR0 CONFIG7L Table Read Protection bit (Block 0 code memory area)
1 = Block 0 is not protected from table reads executed in other blocks
0 = Block 0 is protected from table reads executed in other blocks
EBTRB CONFIG7H Table Read Protection bit (Boot Block memory area)
1 = Boot Block is not protected from table reads executed in other blocks
0 = Boot Block is protected from table reads executed in other blocks
DEV<10:3> DEVID2 Device ID bits
These bits are used with the DEV<2:0> bits in the DEVID1 register to
identify part number.
DEV<2:0> DEVID1 Device ID bits
These bits are used with the DEV<10:3> bits in the DEVID2 register to
identify part number.
REV<4:0> DEVID1 Revision ID bits
These bits are used to indicate the revision of the device.
TABLE 5-3: PIC18F2XK20/4XK20 BIT DESCRIPTIONS (CONTINUED)
Bit Name Configuration
Words Description
.
PIC18F2XK20/4XK20
DS41297F-page 34 Advance Information © 2009 Microchip Technology Inc.
5.3 Single-Supply ICSP Programming
The LVP bit in Configuration register, CONFIG4L,
enables Single-Supply (Low-Voltage) ICSP Program-
ming. The LVP bit defaults to a ‘1’ (enabled) from the
factory.
If Single-Supply Programming mode is not used, the
LVP bit can be programmed to a ‘0’ and RB5/PGM
becomes a digital I/O pin. However, the LVP bit may
only be programmed by entering the High-Voltage
ICSP m ode, whe re MCLR /VPP/RE 3 is rai sed to VIHH.
Once the LVP bit is programmed to a ‘0’, only the
High-Voltage ICSP mode is available and only the
High-Voltage ICSP mode can be used to progr am the
device.
5.4 Embedding Configuration Word
Info rmatio n in th e H EX Fi le
To allow portability of code, a PIC18F2XK20/4XK20
programmer is required to read the Configuration Word
locations from the hex file. If Configuration Word infor-
mation is not present in the hex file, then a simple warn-
ing message should be issued. Similarly, while saving
a hex file, all Configuration Word information must be
included. An option to not include the Configuration
Word information may be provided. When embedding
Config uration W ord in formati on in the h ex fi le, it shoul d
start at address 300000h.
Microchip Technology Inc. feels strongly that this
featur e is imp orta nt for th e bene fit of t he end cu stome r.
5.5 Embedding Data EEPROM
Info rmati on In th e H EX Fi le
To allow portability of code, a PIC18F2XK20/4XK20
programmer is required to read the data EEPROM
informat ion from the hex fil e. If dat a EEPROM inf orma-
tion is not present, a simple warning message should
be issued. Similarly, when saving a hex file, all data
EEPROM information must be included. An option to
not inc lud e the da t a EEPROM informa tion m ay be pro-
vided. When embedding data EEPROM information in
the hex file, it should start at address F00000h.
Microchip Technology Inc. believes that this feature is
important for the benefit of the end customer.
5.6 Checksum Comput ation
The check s um is cal cu lated by summi ng the foll ow in g:
The contents of all code memo ry locations
The Configuration Word, appropriately masked
ID locations (Only if any portion of program
memory is code-protected)
The Least Significant 16 bits of this sum are the
checksum.
Code protection limits access to program memory by
both external programmer (code-protect) and code
execution (table read protect). The ID locations, when
included in a code protected checksum, contain the
checksum of an unprotected part. The unprotected
checksum is distributed: one nibble per ID location.
Each nibble is right justified.
Table 5-4 describes how to calculate the checksum for
each device.
Note 1: The High-Voltage ICSP mode is always
available, regardless of the state of the
LVP bit, by applying VIHH to the MCLR/
VPP/RE3 pin.
2: While in Low-Voltage ICSP mode, the
RB5 pin can no longer be used as a
general purpose I/O.
Note: The checksum calculation differs depend-
ing on the code-protect setting. Since the
code memory locations read o ut differently
dependi ng on the code-pro tect setting, th e
table describes how to manipulate the
actual code memory values to simulate
the values that would be read from a
protected device. When calculating a
checksum by reading a device, the entire
code memory can simply be read and
summed. The Configuration Word and ID
locations can always be read.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 35
PIC18F2XK20/4XK20
TABLE 5-4: CHECKSUM COMPUTATION
Device Code-
Protect Checksum Blank
Value
0xAA at 0
and Max
Address
PIC18FX3K20
None SUM[0000:01FF]+SUM[0200:0FFF]+SUM[1000:1FFF]+
(CONFIG1L & 00h)+(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CONFIG5L & 03h)+
(CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+
(CONFIG7L & 03h)+(CONFIG7H & 40h)
E33Eh E294h
Boot
Block SUM[0 200:0FFF]+ SUM [ 10 00: 1FFF]+(CO NF IG 1L & 00h)+
(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+(CONFIG2H & 1F)+
(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+
(CONFIG4H & 00h)+(CONFIG5L & 03h)+(CONFIG5H & C0h)+
(CONFIG6L & 03h)+(CONFIG6H & E0h)+(CONFIG7L & 03h)+
(CONFIG7H & 40h)+SUM_ID
E520h E4C6h
Boot/
Block 0 SUM[ 1 000:1FFF]+ (CONFIG1L & 00h)+(CO NF IG 1H & CFh)+
(CONFIG 2 L & 1Fh)+(CONFIG2H & 1F)+( C O NFIG3L & 00 h)+
(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+(CONFIG4H & 00h)+
(CONFIG5L & 03h)+(CONFIG5H & C0h)+(CONFIG6L & 03h)+
(CONFIG6H & E0h)+(CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID
F31Fh F2C5h
All (CONFIG1L & 00h)+(CONFIG1H & C Fh )+ (CO NFIG2L & 1F h) +
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CONFIG5L & 03h)+
(CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+
(CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID
031Dh 0318h
PIC18FX4K20
None SUM[0000:07FF]+SUM[0800:1FFF]+SUM[2000:3FFF]+
(CONFIG1L & 00h)+(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CONFIG5L & 03h)+
(CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+
(CONFIG7L & 03h)+(CONFIG7H & 40h)
C33Eh C294h
Boot
Block SUM[0 800:1FFF]+ SUM [ 20 00: 3FFF]+(CO NF IG 1L & 00h)+
(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+(CONFIG2H & 1F)+
(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+
(CONFIG4H & 00h)+(CONFIG5L & 03h)+(CONFIG5H & C0h)+
(CONFIG6L & 03h)+(CONFIG6H & E0h)+(CONFIG7L & 03h)+
(CONFIG7H & 40h)+SUM_ID
CB1Eh CAC4h
Boot/
Block 0 SUM[ 2 000:3FFF]+ (CONFIG1L & 00h)+(CO NF IG 1H & CFh)+
(CONFIG 2 L & 1Fh)+(CONFIG2H & 1F)+( C O NFIG3L & 00 h)+
(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+(CONFIG4H & 00h)+
(CONFIG5L & 03h)+(CONFIG5H & C0h)+(CONFIG6L & 03h)+
(CONFIG6H & E0h)+(CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID
E31Dh E2C3h
All (CONFIG1L & 00h)+(CONFIG1H & C Fh )+ (CO NFIG2L & 1F h) +
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CONFIG5L & 03h)+
(CONFIG5H & C0h)+(CONFIG6L & 03h)+(CONFIG6H & E0h)+
(CONFIG7L & 03h)+(CONFIG7H & 40h)+SUM_ID
031Bh 0316h
Legend: Item Description
CONFIGx = Configuration Word
SUM[a:b] = Sum of locat ions, a to b inclus ive
SUM_ID = Byte-wise sum of lower four bits of all customer ID locations
+=Addition
& = Bit-wise AND
PIC18F2XK20/4XK20
DS41297F-page 36 Advance Information © 2009 Microchip Technology Inc.
PIC18FX5K20
None SUM[0000:07FF]+SUM[0800:1FFF]+SUM[2000:3FFF]+
SUM[4 000 :5 FFF]+SUM[ 600 0: 7FFF]+(CO NFI G 1 L & 00h)+
(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+(CONFIG2H & 1F)+
(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+
(CONFIG4H & 00h)+(CONFIG5L & 0Fh)+(CONFIG5H & C0h)+
(CONFIG 6 L & 0Fh)+(CONFIG6H & E0h )+ (CONFIG7L & 0Fh)+
(CONFIG7H & 40h)
8362h 82B8h
Boot
Block SUM[0800:1FFF]+SUM[2000:3FFF]+SUM[4000:5FFF]+SUM[6000:7FFF
]+
(CONFIG 1 L & 00h)+(CONFIG1H & CFh )+ (CO NFIG2L & 1F h) +
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CO NFIG5L & 0F h) +
(CONFIG5H & C0h)+(CONFIG6L & 0Fh)+(CONFIG6H & E0h)+
(CONFIG 7 L & 0Fh)+(CONF IG 7H & 40h)+SUM_ ID
8B35h 8AEAh
Boot/
Block 0/
Block 1
SUM[4 000 :5 FFF]+SUM[ 600 0: 7FFF]+(CO NFI G 1 L & 00h)+
(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+(CONFIG2H & 1F)+
(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+
(CONFIG4H & 00h)+(CONFIG5L & 0Fh)+(CONFIG5H & C0h)+
(CONFIG 6 L & 0Fh)+(CONFIG6H & E0h )+ (CONFIG7L & 0Fh)+
(CONFIG7H & 40h)+SUM_ID
C332h C2E7h
All (CONFIG1L & 00h)+(CONFIG1H & C Fh )+ (CO NFIG2L & 1F h) +
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CO NFIG5L & 0F h) +
(CONFIG5H & C0h)+(CONFIG6L & 0Fh)+(CONFIG6H & E0h)+
(CONFIG 7 L & 0Fh)+(CONF IG 7H & 40h)+SUM_ ID
0326h 0330h
TABLE 5-4: CHECKSUM COMPUTATION (CONTINUED)
Device Code-
Protect Checksum Blank
Value
0xAA at 0
and Max
Address
Legend: Item Description
CONFIGx = Configuration Word
SUM[a:b] = Sum of locat ions, a to b inclus ive
SUM_ID = Byte-wise sum of lower four bits of all customer ID locations
+=Addition
& = Bit-wise AND
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 37
PIC18F2XK20/4XK20
PIC18FX6K20
None SUM[0000:07FF]+SUM[0800:3FFF]+SUM[4000:7FFF]+
SUM[8000:BFFF]+SUM[C000:FFFF]+(CONFIG1L & 00h)+
(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+(CONFIG2H & 1F)+
(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+
(CONFIG4H & 00h)+(CONFIG5L & 0Fh)+(CONFIG5H & C0h)+
(CONFIG 6 L & 0Fh)+(CONFIG6H & E0h )+ (CONFIG7L & 0Fh)+
(CONFIG7H & 40h)
0362h 02B8h
Boot
Block SUM[0800:3FFF]+SUM[4000:7FFF]+SUM[8000:BFFF]+SUM[C000:FFF
F]+
(CONFIG1L & 00h)+(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CONFIG5L & 0Fh)+
(CONFIG5H & C0h)+(CONFIG6L & 0Fh)+(CONFIG6H & E0h)+
(CONFIG 7 L & 0Fh)+(CON FIG 7H & 40h)+SUM_ ID
0B2Dh 0AE2h
Boot/
Block 0/
Block 1
SUM[3000:BFFF]+SUM[C000:FFFF]+(CONFIG1L & 00h)+
(CONFIG1H & CFh)+(CONFIG2L & 1Fh)+(CONFIG2H & 1F)+
(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+(CONFIG4L & C5h)+
(CONFIG4H & 00h)+(CONFIG5L & 0Fh)+(CONFIG5H & C0h)+
(CONFIG 6 L & 0Fh)+(CONFIG6H & E0h )+ (CONFIG7L & 0Fh)+
(CONFIG7H & 40h)+SUM_ID
832Ah 82DFh
All (CONFIG1L & 00h)+(CONFIG1H & C Fh )+ (CO NFIG2L & 1F h) +
(CONFIG2H & 1F)+(CONFIG3L & 00h)+(CONFIG3H & 8Fh)+
(CONFIG 4L & C5h)+(C ON FIG4H & 00h )+ (CONFIG5L & 0Fh)+
(CONFIG5H & C0h)+(CONFIG6L & 0Fh)+(CONFIG6H & E0h)+
(CONFIG 7 L & 0Fh)+(CON FIG 7H & 40h)+SUM_ ID
031Eh 0328h
TABLE 5-4: CHECKSUM COMPUTATION (CONTINUED)
Device Code-
Protect Checksum Blank
Value
0xAA at 0
and Max
Address
Legend: Item Description
CONFIGx = Configuration Word
SUM[a:b] = Sum of locat ions, a to b inclus ive
SUM_ID = Byte-wise sum of lower four bits of all customer ID locations
+=Addition
& = Bit-wise AND
PIC18F2XK20/4XK20
DS41297F-page 38 Advance Information © 2009 Microchip Technology Inc.
6.0 AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/
VERIFY TEST MODE
Standard Ope ra ting Condition s
Oper ati ng Tempe rature: 25°C is re commended
Param
No. Sym. Characteristic Min. Max. Units Conditions
D110 VIHH High-Voltage Prog ra m m ing Voltage on
MCLR/VPP/RE3 VDD + 4.5 9 V
D110A VIHL Low-Voltage P ro gr am m i ng Voltage on
MCLR/VPP/RE3 1.80 3.60 V
D111 VDD Su ppl y Voltage During Pro gr am m i ng 1.80 3.60 V Row Eras e/ Writ e
2.7 3.60 V Bulk Erase operations
D112 IPP Programming Current on MCLR/VPP/RE3 300 μA
D113 IDDP Supply Curren t During Prog ra m m ing 10 mA
D031 VIL I npu t L ow Voltage VSS 0.2 VDD V
D041 VIH I npu t Hi gh Voltage 0.8 V DD VDD V
D080 VOL Output Low Voltage 0.6 V IOL = X.X mA @ 2.7V
D090 VOH Output High Voltage VDD – 0.7 V IOH = -Y.Y mA @ 2.7V
D012 CIO Capacitive Loading on I/O pin ( PGD) 50 pF To meet AC spe cifica t ions
P1 TRMCLR/VPP/RE3 Rise Time to enter
Program/Verify mode —1.0μs(Note 1)
P2 TPGC Serial Clock (PGC) Period 100 ns VDD = 3. 6V
1 μs VDD = 1.8V
P2A TPGCL Serial Clock (PGC) Low Time 40 ns VDD = 3.6V
400 ns VDD = 1.8V
P2B TPGCH Serial Clock (PGC) High Time 40 n s VDD = 3.6V
400 ns VDD = 1.8V
P3 TSET1 Input Data Setup Time to Serial Clock 15 ns
P4 THLD1 Input Data Hold Time from PGC 15 ns
P5 TDLY1 Delay betwe en 4- bi t Com m and and C om m and
Operand 40 ns
P5A TDLY1ADelay between 4-bit Command Operand and next
4-bit Command 40 ns
P6 TDLY2 Delay betwe en La st PG C of Command Byte to
First PGC of R ead of Data Word 20 ns
P9 TDLY5 PGC High Time (m inimum progra m m i ng time ) 1 ms Exter nally Timed
P9A TDLY5APGC High Time 5 ms Configuration Word
programming time
P10 TDLY6 PGC Low Time after Programming
(high-voltage discha rg e tim e) 200 μs
P11 TDLY7 Delay to allow Self-T imed Data Write or
Bulk Erase t o oc cur 5—ms
P11A TDRWT Data Write Polling Time 4 ms
Note 1: Do not allow excess time when tr ans i tioning MCLR between VIL and VIHH; this can c aus e spurious program
executions to occur. The maximum transition time is:
1 TCY + TPWRT (if enabled) + 1024 TOSC (for LP, HS, HS/PLL and XT modes only) + 2 ms (for HS/PLL mode only)
+ 1.5 μs (for EC m ode only) wher e TCY is the instruction cycle time, TPWRT i s t he Power-up Timer pe riod and
TOSC is the oscill ator period. For specific values, refer to the El ect r ic al C haracter istic s section of th e device data
sheet for th e parti cular device.
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 39
PIC18F2XK20/4XK20
P12 THLD2 Input Data Hold Time from MCLR/VPP/RE3 2—μs
P13 TSET2VDD Setu p Time to M CLR/VPP/RE3 100 ns
P14 TVALID Data Out Valid from PGC 10 ns
P15 TSET3PGM Setup Time to MCLR/VPP/RE3 2—μs
P16 TDLY8 Delay between Last PGC and MCLR/VPP/RE3 0—s
P17 THLD3MCLR/VPP/RE3 to VDD 100 ns
P18 THLD4MCLR/VPP/RE3 to PGM 0—s
P19 THIZ Delay from PGC to PGD High-Z 3 10 nS
P20 TPPDP Hold time after VPP changes 5 μs
6.0 AC/DC CHARACTERISTICS TIMING REQUIREMENTS FOR PROGRAM/
VERIFY TEST MODE (CONTINUED)
Standard Ope ra ting Condition s
Oper ati ng Tempe rature: 25°C is re commended
Param
No. Sym. Characteristic Min. Max. Units Conditions
Note 1: Do not allow excess time when tr ans i tioning MCLR between VIL and VIHH; this can c aus e spurious program
executions to occur. The maximum transition time is:
1 TCY + TPWRT (if enabled) + 1024 TOSC (for LP, HS, HS/PLL and XT modes only) + 2 ms (for HS/PLL mode only)
+ 1.5 μs (for EC m ode only) wher e TCY is the instruction cycle time, TPWRT i s t he Power-up Timer pe riod and
TOSC is the oscill ator period. For specific values, refer t o the El ect r ic al C haracter istic s section of th e device data
sheet for th e parti cular device.
PIC18F2XK20/4XK20
DS41297F-page 40 Advance Information © 2009 Microchip Technology Inc.
NOTES:
© 2009 Microchip Technology Inc. Advance Information DS41297F-page 41
Information contained in this publication regarding device
applications a nd the lik e is p ro vided on ly for yo ur con ve nien ce
and may be supers eded by updates . I t is you r r es ponsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPL AB, PIC , PI Cmi cro, PI CSTART,
rfPIC and UNI/O are registered trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, CodeGuard,
dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
ECONOMONIT OR, FanSense, HI-TIDE, In - Circuit Serial
Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Cert ified
logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code
Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total
Endurance, TSHARC, UniWinDriver, WiperLock and ZENA
are trademarks of Microchip Technology Inc orporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2009, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that it s family of products is one of the most secure families of its kind on t he market today, when used i n the
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2002 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® co de hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS41297F-page 42 Advance Information © 2009 Microchip Technology Inc.
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