DSEP2x60-12A V RRM = 1200 V I FAV = 2x 60 A t rr = 40 ns HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DSEP2x60-12A Backside: isolated Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: SOT-227B (minibloc) rIndustry standard outline rCu base plate internal DCB isolated rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 1200 V 1 mA VR = 1200 V TVJ = 150 C 4 mA IF = TVJ = 25 C 2.42 V 2.84 V 60 A IF = TVJ = 150 C 60 A 1.52 V 1.92 V TC = 80C 60 A TVJ = 150C 1.15 V I F = 120 A I FAV average forward current threshold voltage rF slope resistance rectangular thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved 6.2 m 0.60 K/W 150 C TC = 25 C 200 W TVJ = 45C 800 A -40 t = 10 ms (50 Hz), sine IF = t rr d = 0.5 for power loss calculation only R thJC Unit 1200 I F = 120 A VF0 max. TVJ = 25 C TVJ = 25 C 60 A; VR = 800 V -di F /dt = 600 A/s VR = 600 V; f = 1 MHz TVJ = 25 C 8 A TVJ = 125C 60 A TVJ = 25 C 60 ns TVJ = 125C 220 ns TVJ = 25 C 48 pF Data according to IEC 60747and per diode unless otherwise specified 20110531b DSEP2x60-12A Ratings Symbol Definition Conditions per terminal I RMS RMS current R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 100 0.10 -40 Weight A K/W 150 30 C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm VISOL isolation voltage t = 1 second 3000 t = 1 minute d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside V 2500 V 10.5 3.2 mm 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DSEP2x60-12A Similar Part DSEP2x61-12A IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Marking on Product DSEP2x60-12A Package SOT-227B (minibloc) Delivering Mode Tube Base Qty Code Key 10 495840 Voltage Class 1200 Data according to IEC 60747and per diode unless otherwise specified 20110531b DSEP2x60-12A Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531b DSEP2x60-12A 15.0 100 IF 100 10.0 100C 25C 60 TVJ = 125C VR = 800 V IF = 120 A TVJ = 150C [A] VR = 800 V 12.5 80 120 TVJ = 125C 80 IF = 120 A Qr 7.5 [nC] 40 20 0 01 2 IRM 60 A 30 A [A] 60 5.0 40 2.5 20 0.0 100 3 60 A 30 A 0 1000 0 200 -diF /dt [A/s] VF [V] Fig. 1 Forward current IF vs. VF Fig. 2 Reverse recovery charge Qr versus -diF /dt 2.0 400 600 800 1000 -diF /dt [A/s] Fig. 3 Peak reverse current IRM versus -diF /dt 60 300 VR = 800 V IF = 60 A 50 280 1.2 TVJ = 125C TVJ = 125C 1.0 1.5 trr Kf 1.0 260 IF = 120 A VFR 60 A 30 A [V] [ns] 240 0.8 30 0.6 20 IRM 0.5 40 220 Qr tfr 10 0.4 0.2 VFR 0.0 200 0 40 80 120 160 0 0 200 400 600 800 1000 0 200 -diF /dt [A/s] TVJ [C] Fig. 4 Dynamic parameters Qr, IRM versus TVJ 400 600 800 0.0 1000 -di F /dt [A/s] Fig. 6 Peak forward voltage VFR and tfr versus diF /dt Fig. 5 Recovery time trr versus -diF /dt 1 0.1 ZthJC Constants for ZthJC calculation: [K/W] i 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 Rthi (K/W) ti (s) 1 0.212 0.0055 2 0.248 0.0092 3 0.063 0.0007 4 0.077 0.0391 10 t [s] Fig. 7 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110531b