MMBT2222A PN2222A PZT2222A C C E E TO-92 SOT-23 Mark:1P EBC C SOT-223 B B NPN General Purpose Amplifier * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. * Sourced from process 19. Absolute Maximum Ratings * Ta=25C unless otherwise noted Symbol VCEO Parameter Collector-Emitter Voltage Value 40 Units V VCBO VEBO Collector-Base Voltage 75 V Emitter-Base Voltage 6.0 V IC Collector Current 1.0 A TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics Ta=25C unless otherwise noted Symbol Off Characteristics Parameter Test Condition Min. Max. Units BV(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 40 BV(BR)CBO Collector-Base Breakdown Voltage IC = 10A, IE = 0 75 V V BV(BR)EBO Emitter-Base Breakdown Voltage IE = 10A, IC = 0 6.0 V ICEX Collector Cutoff Current VCE = 60V, VEB(off) = 3.0V ICBO Collector Cutoff Current VCB = 60V, IE = 0 VCB = 60V, IE = 0, Ta = 125C IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 10 A IBL Base Cutoff Current VCE = 60V, VEB(off) = 3.0V 20 A 10 nA 0.01 10 A A On Characteristics hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 10mA, VCE = 10V, Ta = -55C IC = 150mA, VCE = 10V * IC = 150mA, VCE = 10V * IC = 500mA, VCE = 10V * VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V VBE(sat) Base-Emitter Saturation Voltage * IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V 35 50 75 35 100 50 40 0.6 300 0.3 1.0 V V 1.2 2.0 V V * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% (c)2004 Fairchild Semiconductor Corporation Rev. A1, August 2004 Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Small Signal Characteristics (Continued) Test Condition Min. 300 Max. Units fT Current Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz Cobo Output Capacitance VCB = 10V, IE = 0, f = 1MHz 8.0 pF Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1MHz 25 pF MHz rb'Cc Collector Base Time Constant IC = 20mA, VCB = 20V, f = 31.8MHz 150 pS NF Noise Figure IC = 100A, VCE = 10V, RS = 1.0K, f = 1.0KHz 4.0 dB Re(hie) Real Part of Common-Emitter High Frequency Input Impedance IC = 20mA, VCE = 20V, f = 300MHz 60 VCC = 30V, VEB(off) = 0.5V, IC = 150mA, IB1 = 15mA 10 ns 25 ns 225 ns 60 ns Switching Characteristics td Delay Time tr Rise Time ts Storage Time tf Fall Time VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Thermal Characteristics Ta=25C unless otherwise noted Symbol Parameter Max. PN2222A 625 5.0 PD Total Device Dissipation Derate above 25C RJC Thermal Resistance, Junction to Case 83.3 RJA Thermal Resistance, Junction to Ambient 200 *MMBT2222A 350 2.8 **PZT2222A 1,000 8.0 357 125 Units mW mW/C C/W C/W * Device mounted on FR-4 PCB 1.6" x 1.6" x 0.06". ** Device mounted on FR-4 PCB 36mm x 18mm x 1.5mm; mounting pad for the collector lead min. 6cm2. Spice Model NPN (Is = 14.34f Xti = 3 Eg = 1.11 Vaf = 74.03 Bf = 255.9 Ne = 1.307 Ise = 14.34 Ikf = .2847 Xtb = 1.5 Br = 6.092 Isc = 0 Ikr = 0 Rc = 1 Cjc = 7.306p Mjc = .3416 Vjc = .75 Fc = .5 Cje = 22.01p Mje = .377 Vje = .75 Tr = 46.91n Tf = 411.1p Itf = .6 Vtf = 1.7 Xtf = 3 Rb = 10) (c)2004 Fairchild Semiconductor Corporation Rev. A1, August 2004 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 500 V CE = 5V 400 125 C 300 200 25 C 100 - 40 C 0 0.1 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 0.4 = 10 0.3 25 C 0.1 - 40 C 25 C 125 C 0.6 0.4 1 10 100 I ICC - COLLECTOR CURRENT (mA) 1 500 500 1 VCE = 5V 0.8 - 40 C 25 C 0.6 125 C 0.4 0.2 0.1 Figure 3. Base-Emitter Saturation Voltage vs Collector Current 1 10 I ICC - COLLECTOR CURRENT (mA) 25 Figure 4. Base-Emitter On Voltage vs Collector Current 500 100 V CB 20 = 40V CAPACITANCE (pF) I CBO - COLLECTOR CURRENT (nA) 10 100 I C - COLLECTOR CURRENT (mA) Figure 2. Collector-Emitter Saturation Voltage vs Collector Current = 10 0.8 - 40 C V BE(ON) - BASE-EMITTER ON VOLTAGE (V) V BESAT- BASE-EMITTER VOLTAGE (V) Figure 1. Typical Pulsed Current Gain vs Collector Current 1 125C 0.2 10 1 0.1 f = 1 MHz 16 12 C te 8 C ob 4 25 50 75 100 125 T A - AMBIENT TEMPERATURE (C) Figure 5. Collector Cutoff Current vs Ambient Temperature (c)2004 Fairchild Semiconductor Corporation 150 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 6. Emitter Transition and Output Capacitance vs Reverse Bias Voltage Rev. A1, August 2004 Typical Characteristics 400 I B1 = I B2 = 400 Ic V cc = 25 V TIME (nS) TIME (nS) V cc = 25 V 240 160 240 ts 160 tr t off tf 80 80 t on td 100 I CIC - COLLECTOR CURRENT (mA) Figure 7. Turn On and Turn Off Times vs Collector Current PD - POWER DISSIPATION (W) SOT-223 TO-92 0.5 SOT-23 0.25 0 0 25 50 75 100 o TEMPERATURE ( C) 125 150 2 h re h ie h fe 1.6 h oe 1.2 0.8 0.4 0 20 40 60 80 T A - AMBIENT TEMPERATURE (o C) Figure 11. Common Emitter Characteristics (c)2004 Fairchild Semiconductor Corporation 100 CHAR. RELATIVE TO VALUES AT VCE= 10V V CE = 10 V I C = 10 mA 1000 8 V CE = 10 V T A = 25oC 6 h oe 4 h re 2 h fe h ie 0 0 10 20 30 40 50 I C - COLLECTOR CURRENT (mA) 60 Figure 10. Common Emitter Characteristics Figure 9. Power Dissipation vs Ambient Temperature 2.4 100 I CIC - COLLECTOR CURRENT (mA) Figure 8. Switching Times vs Collector Current 1 0.75 0 10 1000 CHAR. RELATIVE TO VALUES AT I C= 10mA 0 10 CHAR. RELATIVE TO VALUES AT TA = 25oC 10 320 320 0 Ic I B1 = I B2 = 10 1.3 I C = 10 mA T A = 25oC 1.25 h fe 1.2 1.15 h ie 1.1 1.05 1 h re 0.95 0.9 0.85 h oe 0.8 0.75 0 5 10 15 20 25 30 VCE - COLLECTOR VOLTAGE (V) 35 Figure 12. Common Emitter Characteristics Rev. A1, August 2004 Package Dimensions TO-92 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2004 Package Dimensions (Continued) SOT-23 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A1, August 2004 Package Dimensions (Continued) SOT-223 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2004 Fairchild Semiconductor Corporation Rev. I11