MMBT2222A_L99Z - Fairchild Semiconductor

Absolute Maximum Ratings *

T

a

=25°C unless otherwise noted

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics

T

a

=25°C unless otherwise noted

* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%

Symbol Parameter Value Units

V

CEO

Collector-Emitter Voltage 40 V

V

CBO

Collector-Base Voltage 75 V

V

EBO

Emitter-Base Voltage 6.0 V

I

C

Collector Current 1.0 A

T

STG

Operating and Storage Junction Temperature Range - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

Off Characteristics

BV

(BR)CEO

Collector-Emitter Breakdown Voltage * I

C

= 10mA, I

B

= 0 40 V

BV

(BR)CBO

Collector-Base Breakdown Voltage I

C

= 10µA, I

E

= 0 75 V

BV

(BR)EBO

Emitter-Base Breakdown Voltage I

E

= 10µA, I

C

= 0 6.0 V

I

CEX

Collector Cutoff Current V

CE

= 60V, V

EB(off)

= 3.0V 10 nA

I

CBO

Collector Cutoff Current V

CB

= 60V, I

E

= 0

V

CB

= 60V, I

E

= 0, T

a

= 125°C0.01

10 µA

µA

I

EBO

Emitter Cutoff Current V

EB

= 3.0V, I

C

= 0 10 µA

I

BL

Bas e C u to ff C u rr e n t V

CE

= 60V, V

EB(off)

= 3.0V 20 µA

On Characteristics

h

FE

DC Current Gain I

C

= 0.1mA, V

CE

= 10V

I

C

= 1.0mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V

I

C

= 10mA, V

CE

= 10V, T

a

= -55°C

I

C

= 150mA, V

CE

= 10V *

I

C

= 150mA, V

CE

= 10V *

I

C

= 500mA, V

CE

= 10V *

35

50

75

35

100

50

40

300

V

CE(sat)

Collector-Emitter Saturation V oltage * I

C

= 150mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 10V 0.3

1.0 V

V

BE(sat)

Base-Emitter Saturation Voltage * I

C

= 150mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 10V 0.6 1.2

2.0 V

V

NPN General Purpose Amplifier

• This device is for use as a medium power amplifier and switch

requiring collector currents up to 500mA.

• Sourced from process 19.

PN2222A MMBT2222A PZT2222A

EBC TO-92 SOT-23 SOT-223

Mark:1P

C

B

EE

BC

C

Electrical Characteristics

Ta=25°C unless otherwise noted

(Continued)

Thermal Charac t eris ti cs

T

a

=25°C unless otherwise noted

* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.

** Devi ce mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm

2

.

Spice Model

NPN (Is = 14.34f Xti = 3 Eg = 1.11 Vaf = 74.03 Bf = 255.9 Ne = 1.307 Ise = 14.34 Ikf = .2847 Xtb = 1.5 B r = 6.092 Isc = 0

Ikr = 0 Rc = 1 Cjc = 7.306p Mjc = .3416 Vjc = .75 Fc = .5 Cje = 22.01p Mje = .377 Vje = .75 Tr = 46.91n Tf = 411.1p Itf = .6

Vtf = 1.7 Xtf = 3 Rb = 10)

Symbol Parameter Test Condition Min. Max. Units

Small Signal Characteristics

f

T

Current Gain Bandwidt h Product I

C

= 20mA, V

CE

= 20V, f = 100MHz 300 MHz

C

obo

Output Capacitance V

CB

= 10V, I

E

= 0, f = 1MHz 8.0 pF

C

ibo

Input Capacit ance V

EB

= 0.5V, I

C

= 0, f = 1MHz 25 pF

rb’C

c

Collector Base Time Constant I

C

= 20mA, V

CB

= 20V, f = 31.8MHz 150 pS

NF Noise Figure I

C

= 100µA, V

CE

= 10V,

R

S

= 1.0KΩ, f = 1.0KHz 4.0 dB

Re(h

ie

) Real Part of Common-Emitter

High Frequency Input Impedance I

C

= 20mA, V

CE

= 20V, f = 300MHz 60 Ω

Switching Characteristics

t

d

Delay T ime V

CC

= 30V, V

EB(off)

= 0.5V,

I

C

= 150mA, I

B1

= 15mA 10 ns

t

r

Rise Time 25 ns

t

s

S torage T ime V

CC

= 30V, I

C

= 150mA,

I

B1

= I

B2

= 15mA 225 ns

t

f

Fall T ime 60 ns

Symbol Parameter Max. Units

PN2222A *MMBT2222A **PZT2222A

P

D

Total Device Dissipation

Derate above 25°C625

5.0 350

2.8 1,000

8.0 mW

mW/°C

R

θJC

Thermal Resistance, Junction to Case 83.3 °C/W

R

θJA

Thermal Resistance, Junction to Ambient 200 357 125 °C/W

Typical Characteristics

Figure 1. Typical Pulsed Current Gain

vs Collector Current Figure 2. Collector-Emitter Saturation Voltage

vs Collector Current

Figure 3. Base-Emitter Saturation Voltage

vs Collector Current Figure 4. Base-Emitter On Voltage

vs Collector Current

Figure 5. Collector Cutoff Current

vs Ambient Temperature Figure 6. Emitter Transition and Output Capacitance

vs Reverse Bias Voltage

0.1 0.3 1 3 10 30 100 300

0

100

200

300

400

500

I - COLLECTOR CURRENT ( mA)

h - TY PI CAL PULSED CUR RENT GAIN

C

FE

125 °C

25 °C

- 40 °C

V = 5V

CE

β

1 10 100 500

0.1

0.2

0.3

0.4

I - COLLECTOR CURRENT (mA)

V - COLLECTOR-EMITTER VOLTAGE (V)

CESAT

25 캜

캜캜

캜

C

β

ββ

β= 10

125 캜

캜캜

캜

- 40 캜

캜캜

캜

°C

1 10 100 500

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER VOLTAGE (V)

BESAT

C

β

ββ

β= 10

25

캜

캜캜

캜

125

캜

캜캜

캜

- 40

캜

캜캜

캜

°C

IC

β

0.1 1 10 25

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V - BASE-EMITTER ON VOL T AGE (V)

BE(ON)

C

V = 5V

CE

25 °C

125 °C

- 40 °C

IC

25 50 75 100 125 150

0.1

1

10

100

500

T - AMBIENT TEMPERATURE ( C)

I - COLLECTOR CURRENT (nA)

A

V

= 40V

CB

CBO

°

β

0.1 1 10 100

4

8

12

16

20

RE VER SE BIAS VOLTAG E (V)

CAP ACIT ANCE (pF)

f = 1 M H z

Cob

C

te

Typical Characteristics

Figure 7. Turn On and Turn Off Times

vs Collector Current Figure 8. Switching Times vs Collector Current

Figure 9. Power Dissipation vs

Ambient Temperature Figure 10. Common Emitter Characteristics

Figure 11. Common Emitter Characteristics Figure 12. Common Emitter Characteristics

10 100 1000

0

80

160

240

320

400

I - COLLEC TO R CURREN T (mA)

TIM E ( nS)

I = I =

ton

t

off

B1

C

B2 Ic

10

V = 25 V

cc

IC

10 100 1000

0

80

160

240

320

400

I - COLLECTOR CURRENT (mA)

TIME (nS)

I = I =

tr

t

s

B1

C

B2 Ic

10

V = 25 V

cc

tf

td

IC

0 25 50 75 100 125 150

0

0.25

0.5

0.75

1

TEMPERATURE ( C)

P - POWER DISSIPATION (W)

D

o

SOT-223

TO-92

SOT-23

0 102030405060

0

2

4

6

8

I - COLLECTOR CURRENT (mA)

CHAR. RELATIVE TO VALUES AT I = 10mA

V = 10 V

CE

C

T = 25 C

A

o

h

oe

h

re

h

fe

h

ie

0 20406080100

0

0.4

0.8

1.2

1.6

2

2.4

T - AMBIENT TEMPERAT URE ( C)

CHAR. RELATIVE TO VALUES AT T = 25 C

V = 10 V

CE

A

I = 10 mA

C

h

oe

h

re

h

fe

h

ie

o

0 5 10 15 20 25 30 35

0.75

0.8

0.85

0.9

0.95

1

1.05

1.1

1.15

1.2

1.25

1.3

V - COLLECTOR VOLTAGE (V)

CHAR. RELATIVE TO VALUES AT V = 10V

CE

T = 25 C

A

o

h

oe

h

re

h

fe

h

ie

I = 10 mA

C

Package Dimensions

TO-92

Dimensions in Millimeters

Package Dimensi ons

(Continued)

Dimensions in Millimeters

Rev. A1, August 2004

SOT-23

Package Dimensi ons

(Continued)

Dimensions in Millimeters

Rev. A1, August 2004

SOT-223

Rev. I11

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intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devic es or systems

which, (a) are inten ded for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructi ons for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In

Design This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notic e in order to improve

design.

No Identification Needed F ull Production This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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