DATA SH EET
Product specification September 2018
DISCRETE SEMICONDUCTORS
BYW29EX series
Rectifier diodes
ultrafast, rugged
WeEn Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated epitaxial rectifier SYMBOL PARAMETER MAX. MAX. UNIT
diodes in a full pack plastic envelope,
featuring low forward voltage drop, BYW29EX- 150 200
ultra-fast recovery times, soft recovery VRRM Repetitive peak reverse 150 200 V
characteristic and guaranteed reverse voltage
surge and ESD capability. They are VFForward voltage 0.895 0.895 V
intended for use in switched mode power IF(AV) Forward current 8 8 A
supplies and high frequency circuits in trr Reverse recovery time 25 25 ns
general where low conduction and IRRM Repetitive peak reverse 0.2 0.2 A
switching losses are essential. current
PINNING - SOD113 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-150 -200
VRRM Repetitive peak reverse voltage - 150 200 V
VRWM Crest working reverse voltage - 150 200 V
VRContinuous reverse voltage - 150 200 V
IF(AV) Average forward current1square wave; δ = 0.5;
Ths ≤ 106 ˚C - 8 A
sinusoidal; a = 1.57;
Ths ≤ 109 ˚C - 7.3 A
IF(RMS) RMS forward current - 11.3 A
IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A
Ths ≤ 106 ˚C
IFSM Non-repetitive peak forward t = 10 ms - 80 A
current t = 8.3 ms - 88 A
sinusoidal; with reapplied
VRWM(max)
I2tI
2t for fusing t = 10 ms - 32 A2s
IRRM Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 0.2 A
IRSM Non-repetitive peak reverse tp = 100 µs - 0.2 A
current
Tstg Storage temperature -40 150 ˚C
TjOperating junction temperature - 150 ˚C
1 Neglecting switching and reverse current losses
September 2018 1Rev 1.300
mb
1 2
TO-220F (SOD113)
A
001aaa020
K
WeEn Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCElectrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from f = 50-60 Hz; sinusoidal - 2500 V
both terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from both terminals f = 1 MHz - 10 - pF
to external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance junction to with heatsink compound - - 5.5 K/W
heatsink without heatsink compound - - 7.2 K/W
Rth j-a Thermal resistance junction to in free air - 55 - K/W
ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFForward voltage IF = 8 A; Tj = 150˚C - 0.80 0.895 V
IF = 8 A - 0.92 1.05 V
IF = 20 A - 1.1 1.3 V
IRReverse current VR = VRWM; Tj = 100 ˚C - 0.2 0.6 mA
VR = VRWM -210µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
QsReverse recovery charge IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs- 4 11 nC
trr1 Reverse recovery time IF = 1 A; VR ≥ 30 V; - 20 25 ns
-dIF/dt = 100 A/µs
trr2 Reverse recovery time IF = 0.5 A to IR = 1 A; Irec = 0.25 A - 15 20 ns
Vfr Forward recovery voltage IF = 1 A; dIF/dt = 10 A/µs-1-V
September 2018 2Rev 1.300
WeEn Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Qs100%
10%
time
dI
dt
F
IR
IF
Irrm
trr
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
time
time
VF
Vfr
VF
IF
024681012
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
BYW29
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
139
128
117
106
95
84
Vo = 0.791 V
Rs = 0.013 ohms
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
012345678
0
1
2
3
4
5
6
7
8a = 1.57
1.9
2.2
2.8
4
BYW29
IF(AV) / A
PF / W Ths(max) / C
150
144.5
139
133.5
128
122.5
117
111.5
106
Vo = 0.791 V
Rs = 0.013 Ohms
September 2018 3Rev 1.300
WeEn Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C.
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C.
Fig.11. Transient thermal impedance; Z
th j-hs
= f(t
p
).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.01.0 10 100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
110 100
-dIF/dt (A/us)
IF=1A
IF=10A
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYW29F/EX
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
0 1 2
30
20
10
0
typ max
IF / A
0.5 1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
September 2018 4Rev 1.300
WeEn Semiconductors Product specification
Rectifier diodes BYW29EX series
ultrafast, rugged
MECHANICAL DATA
September 2018 5Rev 1.300
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOD113 2-lead TO-220F
sod113_po
07-06-08
15-08-28
Unit
mm
max
nom
min
4.6 2.9 1.1 0.7 15.8 10.3
19.0
3.2 2.6
A
Dimensions (mm are the original dimensions)
Notes
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
3. Dot lines area designs may vary.
4. Eject pin mark is for reference only.
Plastic single- ended package; isolated heatsink mounted;
1 mounting hole; 2- lead TO- 220 ‘full pack’ SOD113
A1b
0.9
b1c D E
2.55 0.4 0.8
T(4) w z(2)
e
5.08
HE
max j(3) k(3) L L1(1) m
L
a
2
xm
6.5
0.5
P Q
2.6
1.7 13.50.4 2.8
4.0 2.5 0.9 0.4 15.2 9.7 3.0 2.30.7 6.3
2.7 14.40.6 3.3
q
w
0 5 10 mm
scale
A
A1
c
Q
k(3)
j(3)
m
z(2)
e
1 2
b
E
P
b1
q
D
T(4)
HE
L
L1(1)
L2
WeEn Semiconductors
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