BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS Suitable for AF-Driver stages and low power output stages Complement to BC337/BC338 ABSOLUTE MAXIMUM RATINGS (Ta=25C) Characteristic Symbol Rating Unit Collector-Emitter Voltage Voces : BC327 -50 Vv : BC328 -30 Vv Collector-Emitter Voltage VecEo : BC327 -45 Vv : BC328 -25 Vv Emitter-Base Voltage VeBo 5 Vv Collector Current (DC) le -800 mA Collector Dissipation Po 625 mw Junction Temperature Ty 150 C Storage Temperature Tsta -55 ~ 150 C TO-92 1. Collector 2. Base 3. Emitter ELECTRICAL CHARACTERISTICS (Ta=25C) Characteristic Symbol Test Conditions Min Typ Max Unit Collector Emitter Breakdown Voltage BV ceo lc=-10mA, Ip=0 : BC327 -45 Vv : BC328 25 v Collector Emitter Breakdown Voltage BVces lo= -0.1mMA, Ip=0 : BC327 -50 Vv : BC328 -30 Vv Emitter Base Breakdown Voltage BVeEBo le= -10mA, Io=0 5 Vv Collector Cut-off Current Ices : BC307 Vce= -45V, Ip=0 -2 -100 nA : BC338 Vce= -25V, Ip=0 -2 -100 nA DC Current Gain hee Voe= -1V, lo= -100mA 100 630 Hre2 Voe= -1V, lo= -30mMA 60 Collector-Emitter Saturation Voltage Vce (sat) Io= -500mA, Ip= -50MA -0.7 Vv Base Emitter On Voltage Vee (on) Voe= -1V, Ic= -300MA -1.2 Vv Current Gain Bandwidth Product fr Voce= -5V, lo= -10mMA 100 MHz Collector Base Capacitance Ccso Vop= -10V, f=1MHz 12 pF hre CLASSIFICATION Classification A B Cc hee 100-250 160-400 250-630 hres 60- 400- 170- errr Rev. B FAIRCHILD | SEMICONDUCTOR mw 1999 Fairchild Semiconductor Corporation BC327/328 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR CURRENT vs. COLLECTOR CURRENT vs. COLLECTOR EMITTER VOLTAGE COLLECTOR EMITTER VOLTAGE 500 . 400 eG a g iC a x = 5 a = ge 7300 S 5 4 5 So 5 Fe a 5 ~l wo 3 3 8 -200 3 z = =< 100 Taz TOR ig=0 Q _1 -2 -3 -4 -5 0 -10 20 -30 40 -s0 Ver{V}, COLLECTOR EMITTER VOLTAGE VeelV}, COLLECTOR EMITTER VOLTAGE DC CURRENT GAIN vs. BASE AND COLLECTOR SATURATION COLLECTOR CURRENT VOLTAGE vs. COLLECTOR CURRENT 1000 =10 10 500 y -5 PULSE < e 200 z -2 > 2 100 z 1 S = 2 50 & -05 x - x < 3 a 2 20 < -0.2 a = # 10 B -0.1 es > 5 0.05 & 2 > _o.02 1 -0.01 -01 1 -10 -100 -1000 =0.1 -1 -10 100 -1000 Io{mA), COLLECTOR CURRENT Ic(mA}, COLLECTOR CURRENT COLLECTOR CURRENT vs. GAIN BANDWIDTH PRODUCT vs. BASE EMITTER VOLTAGE EMITTER CURRENT -1000 1000 500 500 200 - a -100 8 200 & -50 E j00 8 E 5 20 2 50 Q -to a 3 < o -5 ao 20 z a z zg -2 6 10 5 # SB oy 3 = 5 -0.5 = -0.2 2 -0.1 1 -0.4 -0.5 -06 -0.7 -0.8 -0.9 1 -2 -5 -=10 20 -50 100 Ver(V), BASE EMITTER VOLTAGE le(mA), EMITTER CURRENT eer ree ee ee en | ere SEMICONDUCTOR mw BC327/328 PNP EPITAXIAL SILICON TRANSISTOR INPUT AND OUTPUT CAPACITANCE vs. REVERSE VOLTAGE SAFE OPERATING AREA Contte=0) Cx(PF), ConpF), CAPACITANCE -O.4 0.2 -0.5-1-2 -5 -10 -20 -50 -100 -1 ~2 -5 -10 -20 -80 -100 Veo(), COLLECTOR-BASE VOLTAGE Vee(V], COLLECTOR TO EMITTER VOLTAGE Vee(V), EMITTER-BASE VOLTAGE POWER DERATING Pp(W), POWER DISSIPATION C 25 sc 75 100 125 150 175 Ta(C), AMBIENT TEMPERATURE ee FAIRCHILD | SEMICONDUCTOR mw TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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