D2003UK
Document Number 3416
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
PDPower Dissipation
BVDSS Drain – Source Breakdown Voltage *
BVGSS Gate – Source Breakdown Voltage *
ID(sat) Drain Current *
Tstg Storage Temperature
TjMaximum Operating Junction Temperature
35W
65V
±20V
1A
–65 to 150°C
200°C
MECHANICAL DATA
C
A
O
NMK
J
I
H
G
F
E
D
B
1
54
3
2
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 1GHz
PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
APPLICATIONS
•VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM mm Tol. Inches Tol.
A 16.38 0.26 0.645 0.010
B 1.52 0.13 0.060 0.005
C 45° 5° 45° 5°
D 6.35 0.13 0.250 0.005
E 3.30 0.13 0.130 0.005
F 14.22 0.13 0.560 0.005
G 1.27 x 45° 0.13 0.05 x 45° 0.005
H 1.52 0.13 0.060 0.005
I 6.35 0.13 0.250 0.005
J 0.13 0.02 0.005 0.001
K 2.16 0.13 0.085 0.005
M 1.52 0.13 0.060 0.005
N 5.08 MAX 0.200 MAX
O 18.90 0.13 0.744 0.005
DQ
PIN 1 SOURCE (COMMON)
PIN 3 DRAIN 2
PIN 5 GATE 1
PIN 2 DRAIN 1
PIN 4 GATE 2
* Per Side
ROHS COMPLIANT
D2003UK
Document Number 3416
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
65
1
1
17
0.18
13
40
20:1
12
6
0.5
VGS = 0 ID= 10mA
VDS = 28V VGS = 0
VGS = 20V VDS = 0
ID= 10mA VDS = VGS
VDS = 10V ID= 1A
PO= 5W
VDS = 28V IDQ = 0.2A
f = 1GHz
VDS = 28V VGS = –5V f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
VDS = 28V VGS = 0 f = 1MHz
V
mA
μA
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
RTHj–case Thermal Resistance Junction – Case Max. 5.0°C / W
THERMAL DATA
* Pulse Test: Pulse Duration = 300 μs , Duty Cycle ≤2%
TOTAL DEVICE
PER SIDE
PER SIDE
BVDSS
IDSS
IGSS
VGS(th)
gfs
GPS
η
VSWR
Ciss
Coss
Crss
D2003UK
Document Number 3416
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Figure 1 Output Power and Gain vs. Input power Figure 2 Output Power and Efficiency vs. Input Power
Figure 3 IMD Vs. Output Power.
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency ZSZL
MHz ΩΩΩΩ
1000MHZ 1.1 - j2.5 5.1 - j17.1
Vds = 28V
Idq = 0.2A
f =1000MHz
02.5 57.5 10
Pout W
0
5
10
15
20
Gain
dB
Gain
Vds = 28V
Idq = 0.2A
f =1GHz
0 2 4 6 8 10
Pout W
0
10
20
30
40
50
60
70
Efficiency
%
Drain Efficiency
Vds = 28V
Idq = 0.2A
f = 1GHz
3RXW:3(3
,0'
G%F
,GT $
,GT $
I 0+]
I 0+]
9
GV
9
!Freq S11 S21 S12 S22
!MHz mag ang mag ang mag ang mag ang
70 0.97 -36.4 15.8 156.6 0.017 67.2 0.91 -23.2
100 0.94 -48.0 14.1 146.3 0.021 58.1 0.88 -30.1
150 0.88 -65.3 12.3 129.9 0.027 45.5 0.81 -40.3
200 0.84 -78.5 10.2 114.7 0.029 34.8 0.77 -48.1
250 0.82 -88.4 8.8 106.0 0.029 28.1 0.75 -54.2
300 0.79 -97.1 7.7 98.3 0.029 27.3 0.73 -59.1
350 0.78 -105.5 6.9 88.5 0.028 22.2 0.72 -64.3
400 0.77 -113.3 6.0 84.5 0.026 24.2 0.71 -69.3
450 0.77 -121.8 5.4 77.8 0.024 23.3 0.70 -75.2
500 0.77 -128.9 4.9 75.3 0.022 29.6 0.70 -80.4
550 0.78 -136.7 4.6 68.3 0.020 35.0 0.70 -86.5
600 0.78 -144.0 4.4 65.4 0.020 46.6 0.70 -93.6
650 0.78 -150.8 4.0 57.2 0.020 57.6 0.70 -99.6
700 0.79 -156.7 3.7 52.3 0.022 68.5 0.71 -105.8
750 0.79 -160.9 3.4 46.7 0.025 76.6 0.70 -111.3
800 0.78 -164.2 3.0 41.4 0.028 81.6 0.69 -115.6
850 0.78 -166.3 2.7 39.5 0.032 87.8 0.68 -117.0
900 0.79 -168.5 2.6 38.4 0.036 92.3 0.68 -119.3
950 0.78 -170.3 2.5 36.8 0.044 97.4 0.70 -121.0
1000 0.79 -172.5 2.4 33.0 0.053 97.4 0.70 -124.2
! Vds=28V, Idq=0.1A
# MHZ S MA R 50
Typical S Parameters
D2003UK
Document Number 3416
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
0.1
1
10
100
0102030
Vds V
Capacitance pF
Output capacitance
Input Capacitance
Reverse transfer capacitance
Figure 5 – Typical CV Characteristics.
Figure 4 – Typical IV Characteristics.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 5 10 15 20 25 30 35
Drain Voltage (Volts)
Drain Current (Amps)
VGS=13V
VGS=12V
VGS=11V
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
D2003UK
Document Number 3416
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
T 2
100nF 1nF
1 K 2
D 2 0 0 3 U K
L 3
1 0
100uF
1-10pF
30pF
30pF
3.6pF 9.1pF
D 2 0 0 3 U K
3.6pF 1-10pF
6 . 8 K 10nF
30pF
30pF
T 1 7
1-10pF
1 K 2
1 K 2 L 2L 1
T 1
T 3 T 4 T 6
T 7 T 8 T 9 T 1 0
G a t e - B i a s
T 5
+ 2 8 V
T 1 1 T 1 3
T 1 6
T 1 2
T 1 5
T 1 4
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass
All microstrip lines W = 2.7mm
T1 15.7
T2, T17 45mm 50 OHM UT 34 semi-rigid coax
T3, T7 7mm
T4, T8 15mm
T5, T9 7.6mm
T6, T10 8mm
T11,T14 8mm
T12,T15 11.2mm
T13,T16 7mm
L1, L2 6 turns 24swg enamelled copper wire, 3mm i.d.
L3 1.5 turn 24swg enamelled copper wire on Siemens B62152-A7X
2 hole core
