DPG20C300PB
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 2 3
Part number
DPG20C300PB
Backside: cathode
FAV
rr
tns35
RRM
10
300
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PB
n
s
3
A
T
VJ
=°C
reverse recovery time
A
5.5
35
45
n
s
I
RM
max. reverse recovery current
I
F
=A;10
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.27
R2.3 K/
W
R
min.
10
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.06V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
65
W
T = 25°C
C
RK/
W
10
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.45
T = 25°C
VJ
150
V
F0
V
0.74T = °C
VJ
175
r
F
17.7 m
Ω
V
0.98T = °C
VJ
I = A
F
V
10
1.17
I = A
F
20
I = A
F
20
threshold voltage
slope resistance for power loss calculation only
µ
150
V
RRM
V
300
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
15
j
unction capacitance V = V150 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
140
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PB
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
D
P
G
20
C
300
PB
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
TO-220AB (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
150-55
TO-220
Similar Part Package Voltage class
DPG20C300PN TO-220ABFP (3) 300
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
1
)
DPG20C300PB 504134Tube 50DPG20C300PBStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.74
mΩ
V
0 max
R
0 max
slope resistance * 14.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PB
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 2.54 BSC 0.100 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
3x b2
E
ØP
Q
D
L1
L
3x b 2x e C
A2
H1
A1
A
123
4
1 2 3
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG20C300PB
0 100 200 300 400 500
20
40
60
80
04080120160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C]
0 100 200 300 400 500
0
2
4
6
8
10
12
0
100
200
300
400
500
600
V
FR
[V]
0 100 200 300 400 500
0
2
4
6
8
10
12
0 100 200 300 400 500
0.0
0.1
0.2
0.3
0.0 0.4 0.8 1.2 1.6 2.0
0
5
10
15
20
25
30
I
RR
[A]
Q
rr
[μC]
I
F
[A]
V
F
[V] -di
F
/dt [A/μs]
t
rr
[ns]
V
FR
t
fr
I
RR
Q
rr
-di
F
/dt [A/μs]
T
VJ
= 125°C
V
R
=200 V
-di
F
/dt [A/μs]
5 A
10 A
T
VJ
=125°C
V
R
= 200 V
-di
F
/dt [A/μs]
0.001 0.01 0.1 1 10
0
1
2
3
t[s]
Z
thJH
[K/W]
0 100 200 300 400 500
0
2
4
6
8
10
E
rec
[μJ]
-di
F
/dt [A/μs]
T
VJ
=25°C
125°C
150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. reverse recov. current
I
RR
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RR
versus T
VJ
Fig. 5 Typ. reverse recov. time
t
rr
versus -di
F
/dt
Fig. 6 Typ. forward recov. voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
Fig. 8 Transient thermal resistance junction to case
T
VJ
=125°C
V
R
=200V
I
F
= 20 A
T
VJ
=125°C
V
R
= 200 V
20 A
10 A
5 A
20 A
10 A
5A
T
VJ
=125°C
I
F
= 10 A
V
R
= 200 V
I
F
= 5 A
10 A
20 A
t
fr
[ns]
Rthi [K/W]
0.3866
0.7062
0.8127
0.3945
ti[s]
0.0004
0.0025
0.022
0.13
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved