VISHAY
LL103A / 103B / 103C
Document Number 85630
Rev. 1.3, 21-Apr-04
Vishay Semiconductors
www.vishay.com
1
94 9371
Small Signal Schottky Barrier Diodes
Features
Integrated protection ring against static discharge
Low capacitance
Low leakage current
Low forward voltage drop
Applications
HF-Detector
Protection circuit
Small battery charger
AC-DC/ DC-Dc converters
Mechanical Data
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Remarks
LL103A VR = 40 V, VF @ IF = 20 mA max. 0.37 V LL103A-GS08 or LL103A-GS18 Tape and Reel
LL103B VR = 30 V, VF @ IF = 20 mA max. 0.37 V LL103B-GS08 or LL103B-GS18 Tape and Reel
LL103C VR = 20 V, VF @ IF = 20 mA max. 0.37 V LL103C-GS08 or LL103C-GS18 Tape and Reel
Parameter Test condition Part Symbol Value Unit
Reverse voltage LL103A VR40 V
LL103B VR30 V
LL103C VR20 V
Forward current IFAV 200 mA
Peak forward surge curent tp = 300 µs, square pulse IFSM 15 mW
Power dissipation l = 4 mm, TL = constant Ptot 400 mW
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Document Number 85630
Rev. 1.3, 21-Apr-04
VISHAY
LL103A / 103B / 103C
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Parameter Test condition Symbol Value Unit
Junction temperature Tj125 °C
Storage temperature range Tstg - 65 to + 150 °C
Junction ambient I = 4 mm, TL = constant RthJA 250 K/W
Parameter Test condition Part Symbol Min Typ. Max Unit
Reverse breakdown voltage IR = 50 µA LL103A IR40 V
LL103B IR30 V
LL103C IR20 V
Leakage current VR = 30 V LL103A IR5µA
VR = 20 V LL103B IR5µA
VR = 10 V LL103C IR5µA
Forward voltage drop IF = 20 mA VF0.37 V
IF = 200 mA VF0.6 V
Junction capacitance VR = 0 V, f = 1 MHz Ctot 50 pF
Reverse recovery time IF = IR = 50 to 200 mA, recover
to 0.1 IR
trr 10 ns
Fig. 1 Forward Current vs. Forward Voltage
I Forward Current ( mA)
0.001
0.010
0.100
1.000
10.000
100.000
1000.000
0 100 200 300 400 500 600 700 800 900 1000
VF Forward Voltage ( mV )
16765
F
1000
100
10
1
0.1
0.01
Fig. 2 Forward Current vs. Forward Voltage
I Forward Current (A)
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0
V
F
Forward Voltage(V)
16766
F
VISHAY
LL103A / 103B / 103C
Document Number 85630
Rev. 1.3, 21-Apr-04
Vishay Semiconductors
www.vishay.com
3
Fig. 3 Reverse Current vs. Junction Temperature
Fig. 4 Diode Capacitance vs. Reverse Voltage
Fig. 5 Typ. Non Repetitive Forward Surge Current vs. Pulse width
1
10
100
1000
10000
0 20 40 60 80 100 120 140 160
T
j
Junction Temperature (°
C)
16767
I Reverse Current ( A )
R
0
5
10
15
20
25
30
0 5 10 15 20 25 30
V
R
Reverse Voltage(V)
16768
C Diode Capacitance ( pF )
D
f=1MHz
0
5
10
15
20
25
0.1 1.0 10.0
t
p Pulse width ( ms )
16769
I–
Typ. Non Repetitve Forward Surge Current (A)
tot
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Document Number 85630
Rev. 1.3, 21-Apr-04
VISHAY
LL103A / 103B / 103C
Vishay Semiconductors
Package Dimensions in mm (Inches)
96 12070
3.5 ± 0.2 (0.14 ± 0.008)
0.47 max.
(0.02)
1.5 ± 0.1
(0.06 ± 0.004)
Cathode indification
Glass case
Mini Melf / SOD 80
JEDEC DO 213 AA
2.50 (0.098) max
5 (0.197) ref
1.25 (0.049) min
2 (0.079) min
Mounting Pad Layout
ISO Method E
VISHAY
LL103A / 103B / 103C
Document Number 85630
Rev. 1.3, 21-Apr-04
Vishay Semiconductors
www.vishay.com
5
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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