CDNBS08-SLVU2.8-8 - Bourns

CDNBS08-SLVU2.8-8 — Low Capacitance TVS Array

Features

Lead free device (RoHS compliant*)

Protects up to 4 I/O ports

Bidirectional configuration

ESD protection

Low capacitance 6 pF

Applications

Ethernet — 10/100/1000 Base T

Personal digital assistant

Handheld electronics

Cellular phones

Video cards

General Information

Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)

Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)

The markets of portable communications, computing and video equipment are

challenging the semiconductor industry to develop increasingly smaller electronic

components.

Bourns offers Transient Voltage Suppressor Array combination diodes for surge and

ESD protection applications in an 8 Lead Narrow Body SOIC package size format.

Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard

pick and place equipment and their flat configuration minimizes roll away.

The Bourns® device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC

61000-4-5 (Surge) requirements.

Parameter Symbol Min. Nom. Max. Unit

Operating Temperature TJ-55 +25 +125 °C

Storage Temperature TSTG -55 +25 +150 °C

Note:

1. See Peak Pulse Power vs. Pulse Time.

2. Each differential line pair.

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*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

*RoHS COMPLIANT

Parameter Symbol Min. Nom. Max. Unit

Peak Pulse Current (tp= 8/20 µs) IPP 30 A

Peak Pulse Power (tp= 8/20 µs)1PPP 600 W

Working Voltage VWM 2.8 V

Breakdown Voltage @ 1 mA VBR 3.0 V

Leakage Current @ VWM ID1.0 µA

Capacitance @ 0 V, 1 MHz C 6 pF

Snapback Voltage @ 50 mA 2.8 V

ESD Protection per IEC 61000-4-2

Contact Discharge

Air Discharge

ESD

±8

±15

EFT Protection per IEC61000-4-4

@ 5/50 nS EFT 60 A

Surge Protection per

IEC 61000-4-5

Clamping Voltage

@ 8/20 µS

@ IP= 5 A2VC8.5 V

@ IP= 24 A2VC15 V

@ IPP = 30 A2VC17 V

CDNBS08-SLVU2.8-8 — Low Capacitance TVS Array

Mechanical Characteristics

MILLIMETERS

(INCHES)

DIMENSIONS =

Dimensions

A1.143 - 1.397

(0.045 - 0.055)

B0.635 - 0.889

(0.025 - 0.035)

C6.223

(0.245) Min.

D3.937 - 4.191

(0.155 - 0.165)

E1.016 - 1.27

(0.040 - 0.050)

This is a molded JEDEC Narrow Body SO-8 package with lead free 100 % Sn plating on the lead frame. It weighs approximately 15 mg and

has a flammability rating of UL 94V-0.

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Recommended Footprint

How To Order

CD NBS08 - SLVU 2.8 - 8

Common Code

CD = Chip Diode

Package

NBS08 = Narrow Body SOIC8 Package

Model

SLVU = Low Capacitance TVS Array

Working Peak Reverse Voltage

2.8 = 2.8 VRWM (Volts)

Number of Diodes

Product Dimensions

CDNBS08-SLVU2.8-8 .......................................................... SL8

Typical Part Marking

Dimensions

A4.80 - 5.00

(0.189 - 0.196)

B3.80 - 4.00

(0.150 - 0.157)

C5.80 - 6.20

(0.229 - 0.244)

D0.36 - 0.46

(0.014 - 0.018)

E1.35 - 1.75

(0.054 - 0.068)

F0.10 - 0.25

(0.004 - 0.008)

G0.25 - 0.50

(0.010 - 0.019)

H0.40 - 1.250

(0.016 - 0.049)

I0.18 - 0.25

(0.007 - 0.009)

CDNBS08-SLVU2.8-8 — Low Capacitance TVS Array

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

Block Diagram

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Device Pinout

Bidirectional

Bidirectional Differential

Pin Common Mode Mode

1Line 1 Line Pair 1

2GND Line Pair 1

3GND Line Pair 2

4Line 4 Line Pair 2

5Line 3 Line Pair 4

6GND Line Pair 4

7GND Line Pair 3

8Line 2 Line Pair 3

Performance Graphs

Peak Pulse Power vs Pulse Time

10,000

1,000

100

10.01 10 100 10,0001,000

PPP – Peak Pulse Current (W)

td – Pulse Duration (µs)

600 W, 8/20 µs Waveform

Pulse Wave Form

100

120

03025201510

IPP – Peak Pulse Current (% of IPP)

t – Time (µs)

Test Waveform Parameters

tt = 8 µs

td = 20 µs

td = t|IPP/2

Power Derating Curve

100

0 25 50 75 100 125 150

% of Rated Power

TL – Lead Temperature (°C)

Average Power

Peak Pulse Power

8/20 µs

CDNBS08-SLVU2.8-8 — Low Capacitance TVS Array

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

REV. 10/11

Packaging Specifications

The product will be dispensed in Tape and Reel format (see diagram below).

Item Symbol NSOIC 8L

Carrier Width A 6.7 ± 0.10

(0.264 ± 0.004)

Carrier Length B 5.5 ± 0.10

0.217 ± 0.004

Carrier Depth C 2.10 ± 0.10

0.083 ± 0.004

Sprocket Hole d 1.55 ± 0.05

(0.061 ± 0.002)

Reel Outside Diameter D 330

(12.992)

Reel Inner Diameter D180.0

(3.1500) MIN.

Feed Hole Diameter D213.0 ± 0.20

(0.512 ± 0.008)

Sprocket Hole Position E 1.75 ± 0.10

(0.069 ± 0.004)

Punch Hole Position F 3.50 ± 0.05

(0.138 ± 0.002)

Punch Hole Pitch P 8.00 ± 0.10

(0.315 ± 0.004)

Sprocket Hole Pitch P04.00 ± 0.10

(0.157 ± 0.004)

Embossment Center P12.00 ± 0.05

(0.079 ± 0.002)

Overall Tape Thickness T 0.20 ± 0.10

(0.008 ± 0.004)

Tape Width W 12.00 ± 0.20

(0.472 ± 0.008)

Reel Width W118.4

(0.724) MAX.

Quantity per Reel - 2500

.......

....... ..............

P A

120 °

Index Hole

10 pitches (min.)

Direction of Feed

10 pitches (min.)

End

Trailer Device Leader

Start

DIMENSIONS: MM

(INCHES)

Devices are packed in accordance with EIA standard

RS-481-A.

Asia-Pacific:

Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116

Europe:

Tel: +41-41 768 5555 • Fax: +41-41 768 5510

The Americas:

Tel: +1-951 781-5500 • Fax: +1-951 781-5700