IRF7904PbF
2www.irf.com
Static @ TJ = 25°C (unless otherw ise specif ied)
Parameter Min. Typ. Max. Units
BV
Drain-to-Source Breakdown Voltage Q1&Q2 30 ––– ––– V
∆ΒV
/∆T
Breakdown Voltage Temp. Coefficient Q1 ––– 0.024 ––– V/°C
Q2 ––– 0.024 –––
Q1 ––– 11.4 16.2
R
Static Drain-to-Source On-Resistance
mΩ
Q2 ––– 8.6 10.8
––– 10 13
V
Gate Threshold Voltage Q1&Q2 1.35 ––– 2.25 V
∆V
/∆T
Gate Thresho ld Voltage Coefficient Q1 ––– -5.0 ––– mV/°C
I
Drain-to-Source Leakage Current Q1&Q2 ––– ––– 1.0 µA
Q1&Q2 ––– ––– 150
I
Gate-to-Source Forward Leakage Q1&Q2 ––– ––– 100 nA
Gate-to-Source Reverse Leakage Q1&Q2 ––– ––– -100
gfs Forward Transconductance Q1 17 ––– ––– S
Q
Total Gate Charge Q1 ––– 7.5 11
Q2 ––– 14 21
Q
Pre-Vth Gate-to-Source Charge Q1 ––– 2.2 ––– Q1
Q2 ––– 3.7 ––– V
= 15V
Post-Vth Gate-to-Source Charge
Q2 ––– 1.1 –––
Q
Gate-to-Drain Charge Q1 ––– 2.5 ––– Q2
Q2 ––– 4.8 ––– V
= 15V
Q
Gate Charge Overdrive Q1 ––– 2.2 ––– V
= 4.5V, I
= 8.8A
Q2 ––– 4.4 –––
Q
Switch Charge (Q
+ Q
) Q1 ––– 3.1 –––
Q2 ––– 5.9 –––
Q
Output Charge Q1 ––– 4.5 ––– nC
Q2 ––– 9.1 –––
Gate Resistance
3.2 4.8 Ω
Q2 ––– 2.9 4.4
t
Turn-On Delay Time Q1 ––– 6.9 –––
Q2 ––– 7.8 –––
t
Rise Time Q1 ––– 7.3 ––– I
= 6.1A
Q2 ––– 10 ––– ns
Q2 ––– 15 –––
t
Fall Time Q1 ––– 3.2 ––– I
= 8.8A
Q2 ––– 4.6 –––
C
Input Capacitance Q1 ––– 910 –––
Q2 ––– 1780 –––
C
Output Capacitance Q1 ––– 190 ––– pF
Q2 ––– 390 –––
C
Reverse Transfer Capacitance Q1 ––– 94 –––
Q2 ––– 180 –––
Avalanche Characteristics Param e ter Q1 Max. Q2 Max. Units
E
Single Pulse Avalanche Energy
d
140 250 mJ
I
Avalanche Current
c
6.1 8.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units
Continuous Source Current
(Body Diode) Q2 ––– ––– 2.5
I
Pulsed Source Current Q1 ––– ––– 61 A
(Body Diode)
c
Q2 ––– ––– 88
V
Diode Forward Voltage Q1 ––– ––– 1.0 V
t
Reverse Recovery Time Q1 ––– 11 17 ns
Q2 ––– 16 24
Q
Reverse Recovery Charge Q1 ––– 2.6 3.9 nC
Q2 ––– 6.9 10
VGS = 4.5V, ID = 6.1A
e
VGS = 4.5V, ID = 8.8A
e
VDS = 15V, ID = 8.8A
VDD = 15V, VGS = 4.5V
VGS = 10V, ID = 11A
e
Q1: VDS = VGS, ID = 25µA
VDS = 15V, ID = 6.1A
VDS = 24V, VGS = 0V, TJ = 125°C
VDD = 15V, VGS = 4.5V
–––
VDS = 15V
Clamped Inductive Load
VGS = 0V
ƒ = 1.0MHz
Typ.
–––
Q1 TJ = 25°C, IF = 6.1A,
VDD = 15V, di/dt = 100A/µs
e
TJ = 25°C, IS = 6.1A, VGS = 0V
e
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 8.8A, VGS = 0V
e
Q2 TJ = 25°C, IF = 8.8A,
VDD = 15V, di/dt = 100A/µs
e
MOSFET symbol
Q2: VDS = VGS, ID = 50µA
VDS = 16V, VGS = 0V
Q1
VGS = 20V
VGS = -20V
VDS = 24V, VGS = 0V
Conditions
Q2
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.6A
e
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