Silicon PIN Chips V20 Features Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP(R) Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss High Isolation RoHS Compliant Description M/A-COM Technology Solutions offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN Chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is M/A-COM Tech's, time proven, hard glass, CERMACHIP(R) . The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP(R) diodes are available in a wide range of voltages, up to 3,000 volts, which are capable of controlling kilowatts of RF power. Many of M/A-COM Tech's silicon PIN diode chips are also available in several different package styles. Please refer to the "Packaged PIN Diode Datasheet" for case style availability and electrical specifications located on the M/A-COM Tech website at : macomtech.com/datasheets/packagedpindiodes Full Area Cathode Absolute Maximum Ratings1 TAMB = +25C (Unless otherwise specified) Parameter Absolute Maximum Forward Current (IF) Per P/N Rs vs. I Graph Reverse Voltage (VR) Per Specification Table Power Dissipation (W) 175C - TambientC Theta Operating Temperature -55C to +175C Storage Temperature -55C to +200C Junction Temperature +175C Mounting Temperature +320C for 10 seconds and for high voltage, high power devices at : macomtech.com/datasheets/MA4PK2000_3000_Series 1 1. Exceeding these limits may cause permanent damage to the chip ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Silicon PIN Chips V20 Low Capacitance PIN Specification @ TAMB = +25C Nominal Characteristics Part Number Max. Rev. Voltage3 VR <10 A VDC Max. Cap. 1 MHz Max. Series Res. Carrier Lifetime1 500 MHz Cj @ -10 V RS @ 10 mA pF Reverse Recovery Time 2 TL S TRR S Anode I Region Length Theta Diameter Chip Size Chip Thk. m C/W 0.5 mils 0.5 mils 0.5 mils MA4P161-134 100 0.10 1.50 150 15 13 65 3.5 13X13 6 MA4P203-134 100 0.15 1.50 150 25 13 75 3.1 13X13 6 MA4P7493-134 150 0.05 1.80 80 8 19 60 3.8 13X13 6.5 MADP-000165-01340W 200 0.06 2.50 200 20 19 30 1.8 13X13 7 MADP-000135-01340W 200 0.15 1.20 440 44 19 30 3.1 13x13 10 Chip Size Chip Thk. 2 mils 1 mils Notes: 1. Nominal carrier life time (TL ) specified at IF = + 10mA , IREV = - 6mA. 2. Nominal reverse recovery time specified at IF = + 20mA , IREV = - 200mA. 3. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10A. Attenuator PIN Specification @ TAMB = +25C Nominal Characteristics Max. Rev. 2 Part Number Voltage VR <10 A VDC Max. Cap. 1MHz Series Max. Res. Series Res. Carrier 100MHz Lifetime1 100MHz Cj @ -100 V RS @ 10 mA pF TL S Series Anode Res. I Region 100MHz Length Theta Diameter RS @ 10 A RS @ 1 mA mils C/W 0.5 mils 3 MA47416-132 200 0.15 6 2 2000 30 4 30 7.5 X7.5 19X19 7 MA47418-134 200 0.15 3 1 500 15 2 25 7.5 13X13 7 Notes: 1. Nominal carrier life time (TL) specified at IF = + 10mA, IREV = - 6mA. 2. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10A. 3. Anode top contact is square. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Silicon PIN Chips V20 CERMACHIP(R) PIN Chips Specification @ TAMB = +25C Unless otherwise noted Unless otherwise noted Max. Series Res. Carrier I Region Lifetime4 Length Theta 100 MHz Max. Rev. Volt.5 Max. Cap. 1 MHz VR < 10 A VDC CJ @ -100 V pF RS @ 100 mA MA4P303-134 200 0.15 @ 10 V MA4P404-132 250 MA4P504-132 Part Number Nominal Characteristics Anode Dia. Chip size Chip Thk. S m C/W 0.5 mils 2.0 mils 1.0 mils 1.5 @ 10 mA2 0.3 20 30 3.0 13X13 10.0 0.20 @ 50 V 0.70 @ 50 mA2 0.6 30 20 6.8 20X20 10.0 500 0.20 0.60 1 50 20 6.8 20X20 10.0 MA4P505-131 500 0.35 0.45 2 50 14 13.0 27X27 11.0 MA4P506-131 500 0.70 0.30 3 50 11 15.8 27X27 12.0 MADP-000488-13740W 900 0.16 @ 50V 1.6 @ 50 mA 4 140 45 12.2 23X23 13.5 MA4P604-131 1000 0.30 1.00 3 90 10 17.0 27X27 13.5 MA4P606-131 1000 0.60 0.70 4 90 8 21.0 32X32 14.0 MA4P607-212 1000 1.30 0.40 12 127 4 37.0 62X62 18.5 MA4PK2000-2231 2000 2.40 0.20 @ 500 mA3 30 230 2 72.0 111X111 21.0 MA4PK3000-12521 3000 2.90 0.25 @ 500 mA3 60 350 1.5 85.0 172X172 28.0 Notes: 1. 2. 3. 4. 5. Upon completion of circuit installation, the chip must be covered with a dielectric conformal coating such as SYLGARD 539(R) to prevent voltage arcing. Test Frequency = 500 MHz Test Frequency = 4 MHz Nominal carrier lifetime (TL) specified at IF = +10 mA , IREV = - 6 mA. Minimum specified VR (Reverse Voltage) is sourced and the resultant reverse leakage current (IREV) is measured to be <10 A. Anode 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Silicon PIN Chips V20 Typical Series Resistance vs. Forward Current Performance 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Silicon PIN Chips V20 MA4PK2000 & MA4PK3000 (2kV & 3kV) Chips 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Silicon PIN Chips V20 Package Availability Table Package Parasitic Capacitance Base Part Number Available ODS Package Styles Package Style Cap. (pF) MA4P161 None. Use MA4P203 as alternative 30 0.18 MADP-000165 None 31 0.18 MADP-000135 None 32 0.30 MA47416 None 36 0.18 MA47418 None 43 0.75 MA4P203 30, 32, 94, 111, 1056 94 0.15 MA4P303 32, 36, 94, 120, 186, 255, 1088 111 0.27 MA4P404 30, 31, 36, 111, 258,1072T* 120 0.13 MA4P504 30, 120, 144, 186, 255,1072T* 144 0.42 MA4P505 36, 255, 1072T* 186 0.15 MA4P506 30, 31, 36, 255, 258, 1072T* 255 0.30 MA4P604 30, 43, 255, 258 258 0.18 MA4P606 30, 36, 258 276 0.13 MA4P607 43, 296 296 0.35 MA4P709 150 1027 0.80 1048 0.80 MA4P7493 None MA4PK2000 1027, 1048,1082, 1056 0.20 MA4PK3000 1073,1074,1084, 1072 0.16 *Note: "T" after the package style number indicates tape and reel. 1073 0.90 1072T = 1500pcs/reel 1074 0.90 1082 0.80 1084 0.90 1088 0.12 Datasheets for electrical specifications of packaged devices can be found at : macomtech.com/datasheets/packagedpindiodes and for high voltage, high power devices macomtech.com/datasheets/MA4PK2000_3000_Series For package outlines refer to web page: macomtech.com/Content/outlinedrawings 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. Silicon PIN Chips V20 Die Handling and Bonding Information Handling: All semiconductor chips should be handled with care to avoid damage or contamination from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickup is strongly recommended for the handling and placing of individual components. Bulk handling should ensure that abrasion and mechanical shock are minimized. Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform, RoHS compliant solders or electrically conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must be free of contamination and should have a surface flatness of < 0.002". Eutectic Die Attachment Using Hot Gas Die Bonder: A work surface temperature of 255oC is recommended. When hot forming gas (95%N/5%H) is applied, the work area temperature should be approximately 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 10 seconds. Eutectic Die Attachment Using Reflow Oven: For recommended reflow profile refer to pages 5-7 of Application Note 538 "Surface Mounting Instructions", Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive, silver epoxy, approximately 1-2 mils in thickness, should be used to minimize ohmic and thermal resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive epoxy per manufacturer's schedule. Typically 150C for 1 hour. Wire and Ribbon Bonding: The die anode bond pads have a Ti-Pt-Au metallization scheme, with a final gold thickness of 1.0 micron. Thermo-compression or thermo-sonic wedge bonding of either gold wire or ribbon is recommended. A bonder heat stage temperature setting of 200oC, tool tip temperature of 150C and a force of 18 to 50 grams is suggested. Ultrasonic energy may also be used but should be adjusted to the minimum amplitude required to achieve an acceptable bond. Excessive energy may cause the anode metallization to separate from the chip. Automatic ball or wedge bonding may also be used. For more detailed handling and assembly instructions, see Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices". 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 * Europe Tel: +353.21.244.6400 is considering for development. Performance is based on target specifications, simulated results, * India Tel: +91.80.43537383 * China Tel: +86.21.2407.1588 and/or prototype measurements. Commitment to develop is not guaranteed. Visit www.macomtech.com for additional data sheets and product information. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.