BCP 54M ... BCP 56M
1 Au -11-1998
Semiconductor Group
NPN Silicon AF Transistors
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP 51M...BCP 53M(PNP)
VPW05980
123
5
4
Type Marking Ordering Code PackagePin Configuration 5 = C4 n.c.BAs
BEs
BHs
BCP 54M
BCP 55M
BCP 56M
1 = B 2 = C 3 = E SCT-595Q62702-C2595
Q62702-C2606
Q62702-C2607
Maximum Ratings
Parameter Symbol BCP 54M BCP 55M BCP 56M Unit
Collector-emitter voltage
V
CEO 45 60 80 V
Collector-base voltage
V
CBO 45 60 100
Emitter-base voltage
V
EBO 5 5 5
DC collector current
I
C1mA
Peak collector current
I
CM 1.5 A
Base current
I
B100 mA
Peak base current
I
BM 200
Total power dissipation,
T
S ≤ 77 °C
P
tot 1.7 W
Junction temperature
T
j150 °C
Storage temperature
T
st
g
-65...+150
Thermal Resistance
≤98
Junction ambient 1)
R
thJA K/W
Junction - soldering point
R
thJS ≤43
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group 1 1998-11-01
BCP 54M ... BCP 56M
2 Au -11-1998
Semiconductor Group
Electrical Characteristics at
T
A = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
typ. max.min.
DC Characteristics
V
(BR)CEO
45
60
80
-
-
-
-
-
-
V
BCP 54M
BCP 55M
BCP 56M
Collector-emitter breakdown voltage
I
C = 10 mA,
I
B = 0
BCP 54M
BCP 55M
BCP 56M
V
(BR)CBO
45
60
100
Collector-base breakdown voltage
I
C = 100 µA,
I
B = 0
-
-
-
-
-
-
-Emitter-base breakdown voltage
I
E = 10 µA,
I
C = 0 -5
V
(BR)EBO
nACollector cutoff current
V
CB = 30 V,
I
E = 0 100
I
CBO --
µACollector cutoff current
V
CB = 30 V,
I
E = 0 ,
T
A = 150 °C 20- -
I
CBO
-DC current gain 1)
I
C = 5 mA,
V
CE = 2 V -
h
FE -25
-250
h
FE
DC current gain 1)
I
C = 150 mA,
V
CE = 2 V 40 -
--
h
FE 25DC current gain 1)
I
C = 500 mA,
V
CE = 2 V -
V0.5--
V
CEsat
Collector-emitter saturation voltage1)
I
C = 500 mA,
I
B = 50 mA
Base-emitter voltage 1)
I
C = 500 mA,
V
CE = 2 V
V
BE(ON) -- 1
AC Characteristics MHz
Transition frequency
I
C = 50 mA,
V
CE = 10 V,
f
= 100 MHz - 100
f
T-
1) Pulse test: t ≤ 300µs, D = 2%
Semiconductor Group 2 1998-11-01
BCP 54M ... BCP 56M
3 Au -11-1998
Semiconductor Group
DC current gain
h
FE =
f
(
I
C)
V
CE = 2V
EHP00268BCP 54...56
3
10 mA
0
10
3
10
5
5
10
0
10
1
10
1
C
FE
h
Ι
2
10
2
10
C
100
5
25
C
-50
C
10
4
Total power dissipation
P
tot =
f
(
T
A*;
T
S)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
T
A
,T
S
0
200
400
600
800
1000
1200
1400
1600
mW
2000
P
tot
T
S
T
A
Permissible Pulse Load
R
thJS =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
T
S
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax /
P
totDC =
f
(
t
p)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group 3 1998-11-01
BCP 54M ... BCP 56M
4 Au -11-1998
Semiconductor Group
Collector cutoff current
I
CBO =
f
(
T
A)
V
CB = 30V
0
10
EHP00269BCP 54...56
A
T
150
-1
4
10
Ι
CBO
nA
50 100
0
10
1
10
3
10
C
10
2
max
typ
Transition frequency
f
T =
f
(
I
C)
V
CE = 10V
10
EHP00267BCP 54...56
03
10mA
1
10
3
10
5
10
1
10
2
10
2
C
T
f
MHz
Ι
Base-emitter saturation voltage
I
C =
f
(
V
BEsat),
h
FE = 10
0
10
EHP00270BCP 54...56
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector-emitter saturation voltage
I
C =
f
(
V
CEsat),
h
FE = 10
0
EHP00271BCP 54...56
CEsat
V
0.4 V 0.8
10
0
10
1
3
10
Ι
C
mA
C
2
10
0.2 0.6
10
4
100
25 C
C
-50
Semiconductor Group 4 1998-11-01
